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1. 发明授权

US5668041A Method of manufacturing a semiconductor device having a capacitor 失效
标题翻译：制造具有电容器的半导体器件的方法
公开(公告)号：US5668041A
公开(公告)日：1997-09-16
申请号：US632194
申请日：1996-04-15
申请人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
发明人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/04 , H01L27/105 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/40 , H01L28/55 , Y10S257/915 , Y10S438/978
摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
摘要翻译：根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从层间绝缘膜的顶面角到掩埋导电层的表面。因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

2. 发明授权

US5652186A Semiconductor device and a method of manufacturing thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5652186A
公开(公告)日：1997-07-29
申请号：US632195
申请日：1996-04-15
申请人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
发明人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/04 , H01L27/105 , H01L21/00
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/40 , H01L28/55 , Y10S257/915 , Y10S438/978
摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
摘要翻译：根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从层间绝缘膜的顶面角到掩埋导电层的表面。因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

3. 发明授权

US5442213A Semiconductor device with high dielectric capacitor having sidewall spacers 失效
标题翻译：具有高介电电容器的半导体器件具有侧壁间隔物
公开(公告)号：US5442213A
公开(公告)日：1995-08-15
申请号：US255854
申请日：1994-06-07
申请人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
发明人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/04 , H01L27/105 , G11C11/24
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/40 , H01L28/55 , Y10S257/915 , Y10S438/978
摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
摘要翻译：根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从层间绝缘膜的顶面角到掩埋导电层的表面。因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

4. 发明授权

US5534458A Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers 失效
标题翻译：具有具有侧壁间隔物的高介电电容器的半导体器件的制造方法
公开(公告)号：US5534458A
公开(公告)日：1996-07-09
申请号：US442925
申请日：1995-05-17
申请人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
发明人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/04 , H01L27/105 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/40 , H01L28/55 , Y10S257/915 , Y10S438/978
摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
摘要翻译：根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从层间绝缘膜的顶面角到掩埋导电层的表面。因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

5. 发明授权

US5418388A Semiconductor device having a capacitor with an adhesion layer 失效
标题翻译：具有具有粘附层的电容器的半导体器件
公开(公告)号：US5418388A
公开(公告)日：1995-05-23
申请号：US214512
申请日：1994-03-18
申请人： Tomonori Okudaira , Takeharu Kuroiwa
发明人： Tomonori Okudaira , Takeharu Kuroiwa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L27/108 , H01L29/78
CPC分类号： H01L28/40 , H01L27/10808
摘要： In a semiconductor device and a method of manufacturing the same, adhesion between a capacitor dielectric film made of material having a high dielectric constant and an interlayer insulating film located thereunder is improved, and a leak current from a capacitor lower electrode is effectively prevented. In the semiconductor device, an adhesion layer (11) made of TiO.sub.2, ZrO.sub.2, Ta.sub.2 O.sub.5, Si.sub.3 N.sub.4 or Al.sub.2 O.sub.3 is interposed between the interlayer insulating film made of a silicon oxide film and the capacitor dielectric film made of material having a high dielectric constant. The adhesion layer improves adhesion between the interlayer insulating film and the capacitor dielectric film.
摘要翻译：在半导体装置及其制造方法中，提高了由介电常数高的材料制成的电容器电介质膜与位于其之下的层间绝缘膜之间的粘附性，有效地防止了来自电容器下电极的泄漏电流。在半导体装置中，由氧化硅膜构成的层间绝缘膜和由介电常数高的材料构成的电容器电介质膜之间插入由TiO 2，ZrO 2，Ta 2 O 5，Si 3 N 4或Al 2 O 3构成的粘合层（11）。粘合层提高了层间绝缘膜和电容器电介质膜之间的粘附性。

6. 发明授权

US08378674B2 Magnetic field detection device 有权
标题翻译：磁场检测装置
公开(公告)号：US08378674B2
公开(公告)日：2013-02-19
申请号：US12601098
申请日：2008-05-27
申请人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
发明人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/072 , G01R33/091
摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.
摘要翻译：一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部并且在输出侧端部的前方配置有磁阻元件。在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于第一弯曲部分的连续形成。

7. 发明申请

US20110233699A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY DEVICE 失效
标题翻译：磁记忆元件和磁记忆装置
公开(公告)号：US20110233699A1
公开(公告)日：2011-09-29
申请号：US13073552
申请日：2011-03-28
申请人： Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
发明人： Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01L27/0207 , H01L43/08
摘要： Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.
摘要翻译：磁存储元件包括通过外部磁场改变磁化方向的记录层，具有易于轴和硬轴交叉的容易轴，第一导电层在记录层的布局位置的易轴方向交叉方向上形成磁场，第二导电层在与第一导电层交叉的方向上延伸，并且在记录层的布置位置处在硬轴的交叉方向上形成磁场。记录层在第一导电层和第二导电层之间具有至少一部分。从第一和第二导电层和记录层被层叠的方向观察的平面状记录层相对于第一导电层的虚拟第一中心线位于侧面和位于另一侧的其它部分，沿着第一导电层从层叠方向观察。从层叠方向观察的部分的面积小于或等于其他部分的三分之一面积。

8. 发明授权

US07973376B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07973376B2
公开(公告)日：2011-07-05
申请号：US12549695
申请日：2009-08-28
申请人： Haruo Furuta , Ryoji Matsuda , Shuichi Ueno , Takeharu Kuroiwa
发明人： Haruo Furuta , Ryoji Matsuda , Shuichi Ueno , Takeharu Kuroiwa
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO2 is formed.
摘要翻译：具有包含记忆精度不劣化的TMR膜的存储单元的半导体装置及其制造方法。在数字线的形成区域的一部分的TMR下电极的平面图中对应的区域选择性地形成TMR元件（TMR膜，TMR上电极）。 TMR上电极由Ta的30-100nm厚度形成，并且在制造过程中也用作硬掩模。在TMR元件的整个表面和TMR下电极的整个表面上形成由LT-SiN形成的层间绝缘膜，覆盖包括TMR下电极的侧表面的整个表面的层间绝缘膜和包括LT-SiN。形成覆盖整个表面并包含SiO 2的层间绝缘膜。

9. 发明申请

US20100264501A1 METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE AND MAGNETIC STORAGE DEVICE 有权
标题翻译：用于制造磁存储器件和磁存储器件的方法
公开(公告)号：US20100264501A1
公开(公告)日：2010-10-21
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

10. 发明授权

US07733210B2 Magnetic field detector and manufacturing method thereof 有权
标题翻译：磁场检测器及其制造方法
公开(公告)号：US07733210B2
公开(公告)日：2010-06-08
申请号：US11378645
申请日：2006-03-20
申请人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Beysen Sadeh , Masakazu Taki
发明人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Beysen Sadeh , Masakazu Taki
IPC分类号： H01L43/00
CPC分类号： G01R33/093 , B82Y25/00
摘要： A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference magnetic resistance element having substantially the same layer structure as that of the detecting magnetic resistance element. A magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in a direction which is sensed by the ferromagnetic layer of the reference magnetic resistance element.
摘要翻译：磁场检测器包括：磁体; 具有包含铁磁层的层结构的检测磁阻元件，所述电阻在所述铁磁层的磁化方向改变时改变; 以及具有与检测用磁阻元件基本相同的层结构的基准磁阻元件。其磁强度高于饱和磁场的磁场被磁铁施加在由参考磁阻元件的铁磁层感测的方向上。

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