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1. 发明申请

US20090032907A1 Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
标题翻译：生产GaxIn1-xN（0x）晶体Gaxin1-xn（0
公开(公告)号：US20090032907A1
公开(公告)日：2009-02-05
申请号：US11919705
申请日：2006-08-17
申请人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
发明人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译：看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1））晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12）在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热，基底基板（7）被单独加热。

2. 发明申请

US20090194848A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER 有权
标题翻译：制造氮化镓晶体和氮化铝膜的方法
公开(公告)号：US20090194848A1
公开(公告)日：2009-08-06
申请号：US12298332
申请日：2007-04-24
申请人： Tomoki Uemura , Takashi Sakurada , shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
发明人： Tomoki Uemura , Takashi Sakurada , shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

3. 发明授权

US08147612B2 Method for manufacturing gallium nitride crystal and gallium nitride wafer 有权
标题翻译：制造氮化镓晶体和氮化镓晶片的方法
公开(公告)号：US08147612B2
公开(公告)日：2012-04-03
申请号：US12298332
申请日：2007-04-24
申请人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
发明人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
IPC分类号： C30B21/02
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

4. 发明授权

US07943964B2 AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same 有权
标题翻译： AlxGayIn1-x-yN晶体基板，半导体器件及其制造方法
公开(公告)号：US07943964B2
公开(公告)日：2011-05-17
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L33/30
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及制造相同。

5. 发明申请

US20090194847A1 A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： Al x Ga y In 1-x-y N晶体衬底，半导体器件及其制造方法
公开(公告)号：US20090194847A1
公开(公告)日：2009-08-06
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm-31 2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为至少1×102cm-2，最多为1×106cm-31.2。由此，可以提供具有大尺寸和合适位错密度的Al x Ga y In 1-x-y N晶体基板，用作用于半导体器件的衬底，包括Al x Ga y In 1-x-y N晶体衬底的半导体器件及其制造方法。

6. 发明授权

US07387989B2 AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate 有权
标题翻译： AlxGayInl-x-yN衬底，AlxGayInl-x-yN衬底的清洗方法，AlN衬底和AlN衬底的清洗方法
公开(公告)号：US07387989B2
公开(公告)日：2008-06-17
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L21/302
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

7. 发明申请

US20080299375A1 ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 审中-公开
标题翻译： AlxGayIn1-x-yN基板，AlxGayIn1-x-yN基板的清洗方法，AIN基板和AIN基板的清洗方法
公开(公告)号：US20080299375A1
公开(公告)日：2008-12-04
申请号：US12149776
申请日：2008-05-08
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C01B21/072 , B32B9/00
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：当AlxGayIn1-x-yN基板的直径为2英寸时，AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。此外，AlxGayIn1-x-yN衬底，其中，通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱，检测角度为10°时，C1s电子的峰面积之比并且N1s电子的峰面积（C1s电子峰面积/ N1s电子峰面积）为3以下，提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。另外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al2s电子的峰面积与N1s电子的峰面积之比（Al 2 S电子峰面积/ N1s电子峰面积）为0.65以下，设置可获得AlN基板的清洗方法。

8. 发明授权

US08294245B2 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture 有权
标题翻译： GaN单晶质量及其制造方法，半导体器件及其制造方法
公开(公告)号：US08294245B2
公开(公告)日：2012-10-23
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
发明人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译：提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

9. 发明申请

US20060003134A1 AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 有权
标题翻译： AlxGayIn1-x-yN基板，AlxGayIn1-x-yN基板的清洗方法，AIN基板和AIN基板的清洗方法
公开(公告)号：US20060003134A1
公开(公告)日：2006-01-05
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： B32B9/00
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

10. 发明授权

US08845992B2 III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate 有权
标题翻译： III族氮化物单晶锭，III族氮化物单晶衬底，III族氮化物单晶锭的制造方法以及III族氮化物单晶衬底的制造方法
公开(公告)号：US08845992B2
公开(公告)日：2014-09-30
申请号：US12864874
申请日：2008-12-24
申请人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
发明人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
IPC分类号： C01B21/06 , C01C1/02 , C30B23/00 , C30B25/00 , C30B28/12 , C30B29/40 , C30B33/12 , C30B25/02
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/12
摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.
摘要翻译：提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法，在长度延长生长期间的裂纹减少。其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面，因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

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