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1. 发明申请

US20090032907A1 Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
标题翻译：生产GaxIn1-xN（0x）晶体Gaxin1-xn（0
公开(公告)号：US20090032907A1
公开(公告)日：2009-02-05
申请号：US11919705
申请日：2006-08-17
申请人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
发明人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译：看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1））晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12）在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热，基底基板（7）被单独加热。

2. 发明申请

US20090194848A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER 有权
标题翻译：制造氮化镓晶体和氮化铝膜的方法
公开(公告)号：US20090194848A1
公开(公告)日：2009-08-06
申请号：US12298332
申请日：2007-04-24
申请人： Tomoki Uemura , Takashi Sakurada , shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
发明人： Tomoki Uemura , Takashi Sakurada , shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

3. 发明授权

US08147612B2 Method for manufacturing gallium nitride crystal and gallium nitride wafer 有权
标题翻译：制造氮化镓晶体和氮化镓晶片的方法
公开(公告)号：US08147612B2
公开(公告)日：2012-04-03
申请号：US12298332
申请日：2007-04-24
申请人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
发明人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
IPC分类号： C30B21/02
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

4. 发明授权

US08294245B2 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture 有权
标题翻译： GaN单晶质量及其制造方法，半导体器件及其制造方法
公开(公告)号：US08294245B2
公开(公告)日：2012-10-23
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
发明人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译：提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

5. 发明申请

US20060003134A1 AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 有权
标题翻译： AlxGayIn1-x-yN基板，AlxGayIn1-x-yN基板的清洗方法，AIN基板和AIN基板的清洗方法
公开(公告)号：US20060003134A1
公开(公告)日：2006-01-05
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： B32B9/00
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

6. 发明授权

US07387989B2 AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate 有权
标题翻译： AlxGayInl-x-yN衬底，AlxGayInl-x-yN衬底的清洗方法，AlN衬底和AlN衬底的清洗方法
公开(公告)号：US07387989B2
公开(公告)日：2008-06-17
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L21/302
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

7. 发明申请

US20080299375A1 ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 审中-公开
标题翻译： AlxGayIn1-x-yN基板，AlxGayIn1-x-yN基板的清洗方法，AIN基板和AIN基板的清洗方法
公开(公告)号：US20080299375A1
公开(公告)日：2008-12-04
申请号：US12149776
申请日：2008-05-08
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C01B21/072 , B32B9/00
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：当AlxGayIn1-x-yN基板的直径为2英寸时，AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。此外，AlxGayIn1-x-yN衬底，其中，通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱，检测角度为10°时，C1s电子的峰面积之比并且N1s电子的峰面积（C1s电子峰面积/ N1s电子峰面积）为3以下，提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。另外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al2s电子的峰面积与N1s电子的峰面积之比（Al 2 S电子峰面积/ N1s电子峰面积）为0.65以下，设置可获得AlN基板的清洗方法。

8. 发明申请

US20120315445A1 Group-III Nitride Crystal Composite 有权
标题翻译： III族氮化物晶体复合材料
公开(公告)号：US20120315445A1
公开(公告)日：2012-12-13
申请号：US13564731
申请日：2012-08-02
申请人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： B32B5/00
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way.
摘要翻译： III族氮化物晶体复合材料由通常为{0001}主表面并且彼此侧向彼此相邻并且在本体晶片上外延的III族氮化物晶体的III族氮化物块状晶体切割的特别加工的晶片形成。切片被布置成使得它们的主表面彼此平行但不一定彼此齐平，并且使得切片中的[0001]方向以相同的方式取向。

9. 发明申请

US20100155902A1 Manufacturing Method of Nitride Substrate, Nitride Substrate, and Nitride-Based Semiconductor Device 失效
标题翻译：氮化物基板，氮化物基板和氮化物基半导体装置的制造方法
公开(公告)号：US20100155902A1
公开(公告)日：2010-06-24
申请号：US12711507
申请日：2010-02-24
申请人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
发明人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
IPC分类号： H01L29/20 , H01L29/32
CPC分类号： H01L31/18 , C30B25/02 , C30B29/403 , H01L29/045
摘要： A manufacturing method of a nitride substrate includes the steps of: preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005p) kPa≦PHCl≦(4+0.0005p) kPa and partial pressure PNH3 satisfies (15−0.0009p) kPa≦PNH3≦(26−0.0017p) kPa, whereby an AlxGayIn1-x-yN crystal (0≦x
摘要翻译：氮化物衬底的制造方法包括以下步骤：制备接地衬底; 在地基底上形成掩模; 将接地衬底放置在反应器中，并将接地衬底加热至850℃至1100℃的温度。在加热接地衬底的步骤中，将HCl和NH 3供应到反应器中，使得分压PHCl满足（ 1.5 + 0.0005p）kPa＆nlE; PHCl＆nlE;（4 + 0.0005p）kPa，分压PNH3满足（15-0.0009p）kPa＆nlE; PNH3＆nlE;（26-0.0017p）kPa，由此得到AlxGayIn1-x-yN晶体（0＆ x <1,0

10. 发明申请

US20090315149A1 MANUFACTURING METHOD OF NITRIDE SUBSTRATE, NITRIDE SUBSTRATE, AND NITRIDE-BASED SEMICONDUCTOR DEVICE 失效
标题翻译：氮化物基板，氮化物基板和氮化物半导体器件的制造方法
公开(公告)号：US20090315149A1
公开(公告)日：2009-12-24
申请号：US12141266
申请日：2008-06-18
申请人： Takuji OKAHISA , Hideaki Nakahata , Koji Uematsu
发明人： Takuji OKAHISA , Hideaki Nakahata , Koji Uematsu
IPC分类号： H01L29/20 , H01L31/20 , C30B25/00
CPC分类号： H01L31/18 , C30B25/02 , C30B29/403 , H01L29/045
摘要： A manufacturing method of a nitride substrate includes the steps of preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005 p) kPa≦PHCl≧(4+0.0005 p) kPa and partial pressure PNH3 satisfies (15−0.0009 p) kPa≦PNH3≧(26−0.0017 p) kPa, whereby an AlxGayIn1-x-yN crystal (0≧x
摘要翻译：氮化物衬底的制造方法包括准备接地衬底的步骤; 在地基底上形成掩模; 将接地衬底放置在反应器中，并将接地衬底加热至850℃至1100℃的温度。在加热接地衬底的步骤中，将HCl和NH 3供应到反应器中，使得分压PHCl满足（ 1.5 + 0.0005 p）kPa <= PHCl> =（4 + 0.0005 p）kPa，分压PNH3满足（15-0.0009 p）kPa <= PNH3> =（26-0.0017 p）kPa，由此将AlxGayIn1-x-yN 生长晶体（0> = x <1,0 = 1），由此形成包括彼此平行的多个脊和谷的脊 - 排列结构。生长AlxGayIn1-x-yN晶体，使得脊 - 谷结构不被掩埋，而来自接地衬底的球的高度允许超过2.5（p-s）。

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