会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Method for manufacturing a semiconductor memory device
    • 半导体存储器件的制造方法
    • US5506159A
    • 1996-04-09
    • US365233
    • 1994-12-28
    • Shuichi Enomoto
    • Shuichi Enomoto
    • H01L21/336H01L21/8247H01L27/105H01L27/115H01L29/78H01L29/788H01L29/792
    • H01L27/11526H01L27/105H01L27/11546
    • A method for manufacturing semiconductor memory device is capable of forming a first diffused layer in a memory cell portion and a second diffused layer in a peripheral portion in respective optimum conditions independently of each other without increasing the masking costs. The method includes steps of forming a polysilicon film covering the entire main surface of the substrate, patterning the polysilicon film in the memory cell portion without patterning the polysilicon film in the peripheral portion, performing a first ion implantation on the main surface to form the first diffused layer in the memory cell portion, while keeping the peripheral portion covered with the second polysilicon film, patterning the second polysilicon film in the peripheral portion to form a gate electrode, and performing a second ion implantation to form the second diffused layer in the peripheral portion. The first ion implantation is performed with the second polysilicon film being grounded for avoiding build-up of electrostatic charges.
    • 一种制造半导体存储器件的方法能够在不增加掩蔽成本的情况下在各自的最佳条件下在存储单元部分和周边部分中的第二扩散层形成第一扩散层。 该方法包括以下步骤:形成覆盖基板的整个主表面的多晶硅膜,对存储单元部分中的多晶硅膜进行图案化,而不对外围部分中的多晶硅膜进行构图,在主表面上执行第一离子注入以形成第一 扩散层在存储单元部分中,同时保持外围部分被第二多晶硅膜覆盖,在周边部分中构图第二多晶硅膜以形成栅电极,并且进行第二离子注入以在周边形成第二扩散层 一部分。 第一离子注入是在第二多晶硅膜接地以避免静电电荷积聚的情况下进行的。
    • 6. 发明授权
    • Method for fabricating a semiconductor device having a capacitor with a
conductive plug structure in a stacked memory cell
    • 一种用于制造具有在堆叠式存储单元中具有导电插塞结构的电容器的半导体器件的方法
    • US5385859A
    • 1995-01-31
    • US97395
    • 1993-07-23
    • Shuichi Enomoto
    • Shuichi Enomoto
    • H01L21/318H01L21/822H01L21/8242H01L27/04H01L27/10H01L27/108H01L21/70H01L27/00
    • H01L27/10852H01L27/10817
    • A method for fabricating a semiconductor device includes steps of: (a) forming a MIS type transistor having a gate electrode and a first source/drain region and a second source/drain on a semiconductor substrate, (b) forming a contact hole by causing an insulating layer and a pad material layer to grow over the semiconductor substrate. and removing selectively the insulating layer and the pad material layer to expose the first source/drain regions, (c) forming a conductive plug, which fills inside the contact hole, by forming a first conductive material layer and etching back this layer in such a way as to leave this layer only in the contact hole, and (d) forming a capacitor which has a first electrode being in contact with the conductive plug and extending in a cantilever-like form from the conductive plug, a dielectric film covering a surface of the first electrode, and a second electrode surrounding the first electrode through the dielectric film. In view of the presence of the conductive plug, the physical strength of the first electrode is enhanced and hence the production yield is enhanced.
    • 一种制造半导体器件的方法包括以下步骤:(a)在半导体衬底上形成具有栅电极和第一源极/漏极区和第二源极/漏极的MIS型晶体管,(b)通过引起 绝缘层和衬垫材料层,以在半导体衬底上生长。 并且选择性地去除所述绝缘层和所述焊盘材料层以暴露所述第一源极/漏极区域,(c)通过形成第一导电材料层形成导电插塞,所述导电插塞填充在所述接触孔内部,并且将所述层 以仅在接触孔中留下该层的方式,(d)形成电容器,其具有与导电插塞接触并且以悬臂状形式从导电插塞延伸的第一电极,覆盖表面的电介质膜 以及通过电介质膜包围第一电极的第二电极。 鉴于导电插塞的存在,提高了第一电极的物理强度,从而提高了生产成本。
    • 9. 发明授权
    • Semiconductor radiation detection apparatus
    • 半导体辐射检测仪
    • US08227759B2
    • 2012-07-24
    • US12607348
    • 2009-10-28
    • Tomonori FukuchiShinji MotomuraShuichi EnomotoYousuke Kanayama
    • Tomonori FukuchiShinji MotomuraShuichi EnomotoYousuke Kanayama
    • G01T1/24
    • G01T1/2928
    • The apparatus has an energy calculation section 32 that calculates energy deposit values of interactions based on signals obtained from segmented electrodes 11, 12 provided on two opposite surfaces of a semiconductor crystal, a reference waveform storing section 33 that stores beforehand waveforms that will be obtained from the segmented electrodes when a single interaction occurs for multiple positions in the crystal, a waveform synthesis section 34 that synthesizes reference waveforms corresponding to arbitrary two points in the crystal as candidate points of interaction at a ratio equal to a ratio of their energy deposit values, and a comparison section 35 that compares a measured waveform and the synthesized waveforms. The candidate points from which the synthesized waveform most similar to the measured waveform is obtained is determined to be the positions of interactions. Thus, even in cases where multiple interactions occur, the positions of the interactions can be detected.
    • 该装置具有能量计算部32,该能量计算部32基于从设置在半导体晶体的两个相对面的分割电极11,12获得的信号来计算相互作用的能量存储值,基准波形存储部33预先存储将从 当晶体中的多个位置发生单个相互作用时的分段电极;波形合成部分34,其以与等于其能量沉积值的比率的比率合成与晶体中的任意两个点相对应的参考波形作为候选交互点, 比较测量波形和合成波形的比较部分35。 获得与测量波形最相似的合成波形的候选点被确定为相互作用的位置。 因此,即使在发生多次相互作用的情况下,也可以检测相互作用的位置。