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    • 4. 发明授权
    • Semiconductor dark image position sensitive device
    • 半导体暗图像位置敏感器件
    • US06335523B1
    • 2002-01-01
    • US09442504
    • 1999-11-18
    • Masanori IdesawaToyomi FujitaYasushige Yano
    • Masanori IdesawaToyomi FujitaYasushige Yano
    • H01L3100
    • H01L31/02024
    • A semiconductor dark image position sensing device comprises a photoelectric layer generating a photoelectric current in a portion where light is input in response to intensity of the light input, a resistive element layer into which the photoelectric current generated in the photoelectric layer flows from a portion corresponding to the position of light input, a second resistive element disposed in association with the photoelectric layer for replenishing an insufficient amount of electric current with respect to the photoelectric current so as to flow the same into the resistive element layer in such that a distribution of electric current flowing into the resistive element layer corresponding to the position of light input becomes substantially uniform over a whole sensing region, and signal electric current output terminals disposed at the opposite ends of the second resistive element.
    • 半导体暗图像位置检测装置包括在响应于光输入的强度输入光的部分中产生光电流的光电层,在光电层中产生的光电流从对应的部分流入的电阻元件层 到光输入的位置,与光电层相关联地设置的第二电阻元件,用于补充相对于光电流的不足量的电流,以便将其流入电阻元件层,使得电 对应于光输入位置的电流元件层的电流在整个感测区域上变得基本均匀,并且设置在第二电阻元件的相对端的信号电流输出端子。
    • 6. 发明授权
    • Semiconductor image position sensitive device
    • 半导体图像位置敏感器件
    • US06847025B1
    • 2005-01-25
    • US09429080
    • 1999-10-29
    • Masanori IdesawaToyomi FujitaYasushige Yano
    • Masanori IdesawaToyomi FujitaYasushige Yano
    • G01B11/00G01C3/06H01L21/66H01L31/02H01L27/00H01J40/14
    • H01L31/02024
    • In order to reduce errors in sensing an image position derived from noise light such as background noise, a semiconductor image position sensing device is provided with a photoelectric layer generating a photoelectric current in a portion onto which light was input in response to intensity of the light input to the photoelectric layer, a resistance layer laminated on the photoelectric layer in which the photoelectric current generated in the photoelectric layer flows into a portion corresponding to that onto which the light was input, and signal current output terminals wherein the photoelectric current generated in the photoelectric layer is distributed in a ratio in response to a resistance value between the signal current output terminals and the resistance layer defined at a position where the photoelectric current flowed into the resistance layer and from which the photoelectric current is output as an electric current obtained by summing currents over the whole sensing sections altogether, comprising further a resistance subtracting a photoelectric current having a predetermined distribution of electric current density from photoelectric currents generated in respective portions of the photoelectric layer over the whole sensing sections, and the photoelectric current subtracted by means of the resistance being adapted to flow into the resistance layer.
    • 为了减少感测从诸如背景噪声的噪声光导出的图像位置的误差,半导体图像位置感测装置具有在响应于光的强度输入光的部分中产生光电流的光电层 输入到光电层,层叠在光电层中的光电层中产生的光电流的电阻层流入与输入光的层对应的部分,以及信号电流输出端,其中在 光电层响应于信号电流输出端子与限定在光电流流入电阻层的位置之间的电阻值并以光电流输出的电阻值的比例分布为电流,该电流值由 整个传感部分的总和电流a 总之,还包括在整个感测部分上从光电层的各个部分中产生的光电流减去具有预定电流密度分布的光电流的电阻,并且通过电阻减去的光电流适于流入 电阻层。