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1. 发明申请

US20100323097A1 DIELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：电介质器件及其制造方法
公开(公告)号：US20100323097A1
公开(公告)日：2010-12-23
申请号：US12868425
申请日：2010-08-25
申请人： Tomohiko KATOH , Kenji Horino , Yuko Saya
发明人： Tomohiko KATOH , Kenji Horino , Yuko Saya
IPC分类号： B05D5/12
CPC分类号： H01G4/33 , H01G4/008 , H01L27/016 , H05K1/162 , H05K3/38 , H05K2201/0175 , H05K2201/0355 , H05K2201/2063 , H05K2203/1105 , Y10T29/49126 , Y10T29/49163 , Y10T29/49204 , Y10T29/49213
摘要： A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.
摘要翻译：电介质器件具有设置在其上的第一导体和电介质。在第一导体和电介质之间形成中间区域。在中间区域中，与第一导体和电介质和电介质不同的添加剂彼此混合。添加剂含有Si，Al，P，Mg，Mn，Y，V，Mo，Co，Nb，Fe和Cr中的至少一种元素。

2. 发明授权

US07808769B2 Dielectric device and method of manufacturing the same 有权
标题翻译：电介质器件及其制造方法
公开(公告)号：US07808769B2
公开(公告)日：2010-10-05
申请号：US11637709
申请日：2006-12-13
申请人： Tomohiko Katoh , Kenji Horino , Yuko Saya
发明人： Tomohiko Katoh , Kenji Horino , Yuko Saya
IPC分类号： H01G4/008
CPC分类号： H01G4/33 , H01G4/008 , H01L27/016 , H05K1/162 , H05K3/38 , H05K2201/0175 , H05K2201/0355 , H05K2201/2063 , H05K2203/1105 , Y10T29/49126 , Y10T29/49163 , Y10T29/49204 , Y10T29/49213
摘要： A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.
摘要翻译：电介质器件具有设置在其上的第一导体和电介质。在第一导体和电介质之间形成中间区域。在中间区域中，与第一导体和电介质和电介质不同的添加剂彼此混合。添加剂含有Si，Al，P，Mg，Mn，Y，V，Mo，Co，Nb，Fe和Cr中的至少一种元素。

3. 发明申请

US20070138128A1 Dielectric device and method of manufacturing the same 有权
标题翻译：电介质器件及其制造方法
公开(公告)号：US20070138128A1
公开(公告)日：2007-06-21
申请号：US11637709
申请日：2006-12-13
申请人： Tomohiko Katoh , Kenji Horino , Yuko Saya
发明人： Tomohiko Katoh , Kenji Horino , Yuko Saya
IPC分类号： H01B13/00
CPC分类号： H01G4/33 , H01G4/008 , H01L27/016 , H05K1/162 , H05K3/38 , H05K2201/0175 , H05K2201/0355 , H05K2201/2063 , H05K2203/1105 , Y10T29/49126 , Y10T29/49163 , Y10T29/49204 , Y10T29/49213
摘要： A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y,V,Mo, Co, Nb, Fe, and Cr.
摘要翻译：电介质器件具有设置在其上的第一导体和电介质。在第一导体和电介质之间形成中间区域。在中间区域中，与第一导体和电介质和电介质不同的添加剂彼此混合。添加剂含有Si，Al，P，Mg，Mn，Y，V，Mo，Co，Nb，Fe和Cr中的至少一种元素。

4. 发明授权

US08468693B2 Dielectric device and method of manufacturing the same 有权
标题翻译：电介质器件及其制造方法
公开(公告)号：US08468693B2
公开(公告)日：2013-06-25
申请号：US12868425
申请日：2010-08-25
申请人： Tomohiko Katoh , Kenji Horino , Yuko Saya
发明人： Tomohiko Katoh , Kenji Horino , Yuko Saya
IPC分类号： H01R43/02
CPC分类号： H01G4/33 , H01G4/008 , H01L27/016 , H05K1/162 , H05K3/38 , H05K2201/0175 , H05K2201/0355 , H05K2201/2063 , H05K2203/1105 , Y10T29/49126 , Y10T29/49163 , Y10T29/49204 , Y10T29/49213
摘要： A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.
摘要翻译：电介质器件具有设置在其上的第一导体和电介质。在第一导体和电介质之间形成中间区域。在中间区域中，与第一导体和电介质和电介质不同的添加剂彼此混合。添加剂含有Si，Al，P，Mg，Mn，Y，V，Mo，Co，Nb，Fe和Cr中的至少一种元素。

5. 发明申请

US20070230086A1 Thin film capacitor and method of manufacturing thin film capacitor 有权
标题翻译：薄膜电容器及制造薄膜电容器的方法
公开(公告)号：US20070230086A1
公开(公告)日：2007-10-04
申请号：US11730154
申请日：2007-03-29
申请人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
发明人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
IPC分类号： H01G4/008
CPC分类号： H01G4/008 , H01G4/33 , H01L27/016 , H01L27/0682 , H01L27/0802 , H01L27/0811 , H01L28/55 , H05K1/09 , H05K1/162 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , Y10T29/417 , Y10T29/435
摘要： A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.
摘要翻译：提供了具有高容量和低漏电流的薄膜电容器。薄膜电容器包括镍（Ni）纯度为99.99重量％以上的镍基板，以及依次设置在镍基板上的电介质层和电极层。薄膜电容器通常如下制造。在镍基底上形成前体电介质层，其镍纯度为99.99重量％以上，并进行退火以形成电介质层。抑制了退火时的杂质从镍基体向前体电介质层的扩散。

6. 发明授权

US07561406B2 Nickel substrate thin film capacitor and method of manufacturing nickel substrate thin film capacitor 有权
标题翻译：镍基薄膜电容器及镍基薄膜电容器的制造方法
公开(公告)号：US07561406B2
公开(公告)日：2009-07-14
申请号：US11730154
申请日：2007-03-29
申请人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
发明人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
IPC分类号： H01G4/008 , H01G4/06 , H01G7/00
CPC分类号： H01G4/008 , H01G4/33 , H01L27/016 , H01L27/0682 , H01L27/0802 , H01L27/0811 , H01L28/55 , H05K1/09 , H05K1/162 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , Y10T29/417 , Y10T29/435
摘要： A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.
摘要翻译：提供了具有高容量和低漏电流的薄膜电容器。薄膜电容器包括镍（Ni）纯度为99.99重量％以上的镍基板，以及依次设置在镍基板上的电介质层和电极层。薄膜电容器通常如下制造。在镍基底上形成前体电介质层，其镍纯度为99.99重量％以上，并进行退火以形成电介质层。抑制了退火时的杂质从镍基体向前体电介质层的扩散。

7. 发明申请

US20070236866A1 Dielectric element and method for manufacturing same 有权
标题翻译：介电元件及其制造方法
公开(公告)号：US20070236866A1
公开(公告)日：2007-10-11
申请号：US11602981
申请日：2006-11-22
申请人： Tomohiko Katoh , Kenji Horino
发明人： Tomohiko Katoh , Kenji Horino
IPC分类号： H01G4/10
CPC分类号： H01G4/33 , H01G4/008 , H01L28/55 , Y10T29/413 , Y10T29/435 , Y10T29/49128
摘要： A method for manufacturing a dielectric element including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabricate a second laminated structure; and annealing the second laminated structure under a reduced pressure atmosphere at a temperature of 150° C. or higher.
摘要翻译：一种制造电介质元件的方法，包括以下步骤：制备下电极; 在下电极上形成电介质以制造第一层压结构; 退火第一层压结构; 在电介质膜上形成上电极以制造第二叠层结构; 并在150℃或更高的温度的减压气氛下退火第二层压结构。

8. 发明授权

US07581311B2 Method for manufacturing a dielectric element 有权
标题翻译：电介质元件的制造方法
公开(公告)号：US07581311B2
公开(公告)日：2009-09-01
申请号：US11602981
申请日：2006-11-22
申请人： Tomohiko Katoh , Kenji Horino
发明人： Tomohiko Katoh , Kenji Horino
IPC分类号： H05K3/20
CPC分类号： H01G4/33 , H01G4/008 , H01L28/55 , Y10T29/413 , Y10T29/435 , Y10T29/49128
摘要： A method for manufacturing a dielectric element including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabricate a second laminated structure; and annealing the second laminated structure under a reduced pressure atmosphere at a temperature of 150° C. or higher.
摘要翻译：一种制造电介质元件的方法，包括以下步骤：制备下电极; 在下电极上形成电介质以制造第一层压结构; 退火第一层压结构; 在电介质膜上形成上电极以制造第二叠层结构; 并在150℃或更高的温度的减压气氛下退火第二层压结构。

9. 发明授权

US08218287B2 Thin-film device 有权
标题翻译：薄膜装置
公开(公告)号：US08218287B2
公开(公告)日：2012-07-10
申请号：US12727549
申请日：2010-03-19
申请人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

10. 发明授权

US07883905B2 Process for producing a BST thin-film capacitor having increased capacity density and reduced leakage current density 有权
标题翻译：具有增加的容量密度和降低的漏电流密度的BST薄膜电容器的制造方法
公开(公告)号：US07883905B2
公开(公告)日：2011-02-08
申请号：US11989600
申请日：2006-07-28
申请人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
发明人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
IPC分类号： H01L21/00
CPC分类号： H01G4/1227 , C23C18/1216 , C23C18/1279 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/016 , H01L28/55
摘要： It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.
摘要翻译：本发明的目的是提供一种可以同时实现钛酸锶钡薄膜的容量密度提高和漏电流密度降低的薄膜电容器的制造方法。提供一种制造薄膜电容器的方法，其包括金属氧化物薄膜形成步骤，其中将有机介电起始材料烧制以形成钛酸钡锶钡薄膜，其中所用的烧成气氛为氧 - 并且通过该方法形成的钛酸钡锶薄膜的电容密度比在氧气氛中烧制的钛酸钡锶薄膜的容量密度大。

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