专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100246092A1 THIN-FILM DEVICE 有权
标题翻译：薄膜器件
公开(公告)号：US20100246092A1
公开(公告)日：2010-09-30
申请号：US12727549
申请日：2010-03-19
申请人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

2. 发明授权

US08218287B2 Thin-film device 有权
标题翻译：薄膜装置
公开(公告)号：US08218287B2
公开(公告)日：2012-07-10
申请号：US12727549
申请日：2010-03-19
申请人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

3. 发明授权

US08315038B2 Thin-film capacitor and electronic circuit board 有权
标题翻译：薄膜电容器和电子电路板
公开(公告)号：US08315038B2
公开(公告)日：2012-11-20
申请号：US12756520
申请日：2010-04-08
申请人： Hitoshi Saita , Naoto Tsukamoto , Akira Shibue , Kenji Horino
发明人： Hitoshi Saita , Naoto Tsukamoto , Akira Shibue , Kenji Horino
IPC分类号： H01G9/02 , C04B35/00
CPC分类号： H01G4/33 , C04B35/4682 , C04B2235/3224 , C04B2235/3239 , C04B2235/3251 , C04B2235/3262 , C04B2235/441 , C04B2235/764 , C04B2235/79 , H01G4/1227 , H01L27/016 , H01L28/40 , H05K1/185
摘要： A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3 (1) where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.
摘要翻译：薄膜电容器具有高可靠性的绝缘电阻值高。薄膜电容器包括电介质薄膜和通过电介质薄膜彼此相对的电极，该电介质薄膜含有具有由（1）表示的组成的钙钛矿型复合氧化物，Mn和至少一种元素 M选自V，Nb和Ta; 其中所述电介质薄膜相对于所述复合氧化物100摩尔的Mn含量为0.05〜0.45摩尔; 相对于100摩尔的复合氧化物，电介质薄膜的总成分M含量为0.05〜0.5摩尔，AyBO 3（1）其中A为选自Ba，Sr，Ca，Pb中的至少一种元素，B是选自Ti，Zr，Hf和Sn中的至少一种元素，以及0.97和nlE; y＆nlE; 0.995。

4. 发明授权

US08498095B2 Thin-film capacitor with internally hollow through holes 有权
标题翻译：具有内部中空通孔的薄膜电容器
公开(公告)号：US08498095B2
公开(公告)日：2013-07-30
申请号：US12956060
申请日：2010-11-30
申请人： Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
发明人： Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
IPC分类号： H01G4/005 , H01G4/20 , H01G4/33 , H01G4/012
CPC分类号： H01G4/33 , H01G4/005 , H01G4/012 , H01G4/20
摘要： A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.
摘要翻译：提供了不容易产生内部开裂或剥离的薄膜电容器。在本实施方式的薄膜电容器中，由于在层叠方向上以Ni为主要成分的内部电极形成贯通孔H，所以贯通孔H的至少一部分的表面积为0.19 m 2〜7.0mum 2，通孔H的表面积与内部电极整个表面的表面积的比例在0.05〜5％的范围内，可以抑制剥离或开裂内部电极和电介质层之间的边界，结果提高了产率。

5. 发明授权

US07883905B2 Process for producing a BST thin-film capacitor having increased capacity density and reduced leakage current density 有权
标题翻译：具有增加的容量密度和降低的漏电流密度的BST薄膜电容器的制造方法
公开(公告)号：US07883905B2
公开(公告)日：2011-02-08
申请号：US11989600
申请日：2006-07-28
申请人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
发明人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
IPC分类号： H01L21/00
CPC分类号： H01G4/1227 , C23C18/1216 , C23C18/1279 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/016 , H01L28/55
摘要： It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.
摘要翻译：本发明的目的是提供一种可以同时实现钛酸锶钡薄膜的容量密度提高和漏电流密度降低的薄膜电容器的制造方法。提供一种制造薄膜电容器的方法，其包括金属氧化物薄膜形成步骤，其中将有机介电起始材料烧制以形成钛酸钡锶钡薄膜，其中所用的烧成气氛为氧 - 并且通过该方法形成的钛酸钡锶薄膜的电容密度比在氧气氛中烧制的钛酸钡锶薄膜的容量密度大。

6. 发明申请

US20070230086A1 Thin film capacitor and method of manufacturing thin film capacitor 有权
标题翻译：薄膜电容器及制造薄膜电容器的方法
公开(公告)号：US20070230086A1
公开(公告)日：2007-10-04
申请号：US11730154
申请日：2007-03-29
申请人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
发明人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
IPC分类号： H01G4/008
CPC分类号： H01G4/008 , H01G4/33 , H01L27/016 , H01L27/0682 , H01L27/0802 , H01L27/0811 , H01L28/55 , H05K1/09 , H05K1/162 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , Y10T29/417 , Y10T29/435
摘要： A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.
摘要翻译：提供了具有高容量和低漏电流的薄膜电容器。薄膜电容器包括镍（Ni）纯度为99.99重量％以上的镍基板，以及依次设置在镍基板上的电介质层和电极层。薄膜电容器通常如下制造。在镍基底上形成前体电介质层，其镍纯度为99.99重量％以上，并进行退火以形成电介质层。抑制了退火时的杂质从镍基体向前体电介质层的扩散。

7. 发明申请

US20060071263A1 Dielectric thin film, dielectric thin film device, and method of production thereof 有权
标题翻译：介电薄膜，介电薄膜器件及其制造方法
公开(公告)号：US20060071263A1
公开(公告)日：2006-04-06
申请号：US11236724
申请日：2005-09-28
申请人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
发明人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
IPC分类号： H01L21/8242 , H01L29/94
CPC分类号： H01L21/02197 , H01L21/02323 , H01L21/02337 , H01L21/31691 , H01L28/55 , H01L28/65
摘要： To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5
摘要翻译：为了提供具有高介电常数，低漏电流和稳定物理性能和电性能的电介质薄膜，并提供具有高电容和高可靠性的薄膜电容器或其它薄膜电介质器件，以及生产的方法相同的是，含有氧化物如钛酸锶钡的氧化物的电介质薄膜由式（Ba> Sr Sr>>（（（（））TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO （0.5

8. 发明申请

US20060072282A1 Dielectric thin film, thin film capacitor element, and method for manufacturing thin film capacitor element 审中-公开
标题翻译：介电薄膜，薄膜电容器元件以及薄膜电容器元件的制造方法
公开(公告)号：US20060072282A1
公开(公告)日：2006-04-06
申请号：US11235051
申请日：2005-09-27
申请人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
发明人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
IPC分类号： H01G4/20
CPC分类号： H01L21/02197 , H01G4/1227 , H01G4/33 , H01L21/02266 , H01L21/31691 , H01L27/016 , H01L28/55 , H01L28/65
摘要： The present invention provides a dielectric thin film whose composition is expressed by the formula (Ba1-xSrx)yTiO3 (0.18≦x≦0.45, 0.96≦y≦1.04), and whose peak intensity ratio I(100)I(110) is from 0.02 to 2.0 when I(100) is the peak intensity of the diffraction line of the (100) plane, and I(110) is the peak intensity of the diffraction line of the (110) plane in an X-ray diffraction chart of the dielectric thin film.
摘要翻译：本发明提供了一种电介质薄膜，其组成由式（Ba x 1-x x Sr x）y TiO 2 3 （100≤I≤1.0），并且当I（100）为峰强度时，峰强度比I（100）I（110）为0.02〜2.0，（100）面的衍射线和I（110）是电介质薄膜的X射线衍射图中的（110）面的衍射线的峰值强度。

9. 发明授权

US08294036B2 Electronic component and electronic component module 有权
标题翻译：电子元件和电子元件模块
公开(公告)号：US08294036B2
公开(公告)日：2012-10-23
申请号：US12410699
申请日：2009-03-25
申请人： Shinichiro Kakei , Kenji Horino , Hitoshi Saita , Yasunobu Oikawa
发明人： Shinichiro Kakei , Kenji Horino , Hitoshi Saita , Yasunobu Oikawa
IPC分类号： H05K1/16 , H05K1/18
CPC分类号： H05K1/162 , H05K3/382 , H05K2201/0175 , H05K2201/0187 , H05K2201/0355 , H05K2201/09509 , H05K2201/09718 , H05K2201/09763 , H05K2203/033
摘要： In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.
摘要翻译：在电介质元件中，侧面粗糙化，使得表面粗糙度Ra为15nm以上。通过这种方式，玻璃环氧树脂基板和绝缘材料之间的接触面积增加，与树脂基板的粘合性提高，并且当埋在两个树脂基板之间时可以提高强度和可靠性。在电介质元件中，侧面的表面粗糙度Ra为5000nm以下，因此当在玻璃环氧树脂基板和绝缘材料之间埋入电介质元件时，介电元件表面与树脂之间产生气泡可以防止。

10. 发明授权

US08149584B2 Electronic component and electronic component module 有权
标题翻译：电子元件和电子元件模块
公开(公告)号：US08149584B2
公开(公告)日：2012-04-03
申请号：US12410685
申请日：2009-03-25
申请人： Hitoshi Saita , Kenji Horino , Yasunobu Oikawa , Shinichiro Kakei
发明人： Hitoshi Saita , Kenji Horino , Yasunobu Oikawa , Shinichiro Kakei
IPC分类号： H05K1/18
CPC分类号： H05K1/162 , H05K2201/0355 , H05K2201/09509 , H05K2201/09763 , H05K2201/098
摘要： In a dielectric element, the angle θ made by either the top face or the bottom face and the side faces is either 0°
摘要翻译：在电介质元件中，角度和角度; 由顶面或底面和侧面制成的角度为0°<θ; <89°，或91°<θ; <180°，并且为89°＆lt; l1E以外的角度;＆Thetas;＆nlE; 91°。通过这种方式，介电元件的侧面与玻璃环氧树脂基板和绝缘材料的接触面积增加，与树脂基板的粘附性提高，并且当埋在两个树脂之间时，可以提高强度和可靠性底物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式