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    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07968941B2
    • 2011-06-28
    • US12412659
    • 2009-03-27
    • Kazunori FujitaTomio YamashitaHaruki YonedaKazuhiro Sasada
    • Kazunori FujitaTomio YamashitaHaruki YonedaKazuhiro Sasada
    • H01L29/76
    • H01L29/7816H01L29/0696H01L29/0878H01L29/1095H01L29/42368H01L29/4238H01L29/66681
    • A semiconductor device includes: an epitaxial layer; a body layer, formed in the epitaxial layer, which includes a channel region; a source layer disposed in superposition on the body layer; a gate insulator, formed on the epitaxial layer, which is in a ring shape surrounding the source layer; a gate electrode formed through the gate insulator; a drift layer, formed in the epitaxial layer, which is in a ring shape surrounding the body layer; and a drain layer formed in the surface of the epitaxial layer and disposed opposite to the source layer. The body layer is disposed such that the boundary surface at an end in the gate-width direction is in contact with the undersurface of the gate insulator. The gate insulator has a thick film portion thicker than a part above the channel region in the gate-length direction at least in a part where the gate insulator is in contact with the boundary surface of the body layer at the end in the gate-width direction.
    • 半导体器件包括:外延层; 形成在外延层中的体层,其包括沟道区; 源层,叠加在体层上; 形成在外延层上的栅极绝缘体,其围绕源极层呈环形; 通过栅极绝缘体形成的栅电极; 在外延层中形成的漂移层,该外延层围绕主体层呈环状; 以及形成在所述外延层的表面中并且与所述源极层相对设置的漏极层。 主体层被布置成使得栅极宽度方向上的端部处的边界表面与栅极绝缘体的下表面接触。 栅极绝缘体至少在栅极绝缘体与栅极宽度端部处的主体层的边界面接触的部分中具有比栅极长度方向上的沟道区域上方的部分更厚的厚膜部分 方向。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090242981A1
    • 2009-10-01
    • US12412659
    • 2009-03-27
    • Kazunori FujitaTomio YamashitaHaruki YonedaKazuhiro Sasada
    • Kazunori FujitaTomio YamashitaHaruki YonedaKazuhiro Sasada
    • H01L29/78
    • H01L29/7816H01L29/0696H01L29/0878H01L29/1095H01L29/42368H01L29/4238H01L29/66681
    • A semiconductor device includes: an epitaxial layer; a body layer, formed in the epitaxial layer, which includes a channel region; a source layer disposed in superposition on the body layer; a gate insulator, formed on the epitaxial layer, which is in a ring shape surrounding the source layer; a gate electrode formed through the gate insulator; a drift layer, formed in the epitaxial layer, which is in a ring shape surrounding the body layer; and a drain layer formed in the surface of the epitaxial layer and disposed opposite to the source layer. The body layer is disposed such that the boundary surface at an end in the gate-width direction is in contact with the undersurface of the gate insulator. The gate insulator has a thick film portion thicker than a part above the channel region in the gate-length direction at least in a part where the gate insulator is in contact with the boundary surface of the body layer at the end in the gate-width direction.
    • 半导体器件包括:外延层; 形成在外延层中的体层,其包括沟道区; 源层,叠加在体层上; 形成在外延层上的栅极绝缘体,其围绕源极层呈环形; 通过栅极绝缘体形成的栅电极; 在外延层中形成的漂移层,该外延层围绕主体层呈环状; 以及形成在所述外延层的表面中并且与所述源极层相对设置的漏极层。 主体层被布置成使得栅极宽度方向上的端部处的边界表面与栅极绝缘体的下表面接触。 栅极绝缘体至少在栅极绝缘体与栅极宽度端部处的主体层的边界面接触的部分中具有比栅极长度方向上的沟道区域上方的部分更厚的厚膜部分 方向。