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1. 发明申请

US20220235457A1 METHOD FOR DEPOSITING BORON NITRIDE FILM AND FILM DEPOSITION APPARATUS 有权
公开(公告)号：US20220235457A1
公开(公告)日：2022-07-28
申请号：US17648950
申请日：2022-01-26
申请人： Tokyo Electron Limited
发明人： Shota CHIDA , Yosuke WATANABE
IPC分类号： C23C16/34 , C23C16/458 , C23C16/455
摘要： A method for depositing a boron nitride film is provided. In the method, a seed layer is formed on a surface of a substrate by supplying an aminosilane gas to the surface of the substrate. The surface of the substrate includes bases having different incubation times for depositing a boron nitride film. A boron nitride film is deposited on the seed layer.

2. 发明申请

US20140318457A1 METHOD OF CLEANING FILM FORMING APPARATUS AND FILM FORMING APPARATUS 审中-公开
标题翻译：清洗成膜装置和薄膜成膜装置的方法
公开(公告)号：US20140318457A1
公开(公告)日：2014-10-30
申请号：US14262334
申请日：2014-04-25
申请人： TOKYO ELECTRON LIMITED
发明人： Kota UMEZAWA , Yosuke WATANABE
IPC分类号： C23C16/44 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/4408 , C23C16/45523
摘要： A film forming apparatus includes: a processing chamber configured to accommodate a substrate to be processed, the processing chamber performing a film forming process forming a compound semiconductor film; a heating device configured to heat the substrate to be processed; an exhaust device configured to exhaust an interior of the processing chamber, and a process gas supply mechanism configured to supply a gas to the processing chamber. In addition, a method of cleaning the film forming apparatus includes: performing a process of cleaning the interior of the processing chamber and a member; performing a process of cleaning lower portions of the interior of the processing chamber and the member, respectively; and performing a process of cleaning a gas supply channel, wherein the processes are performed by controlling the pressure and temperature inside the processing chamber and supplying a cleaning gas from the gas supply channel.
摘要翻译：一种成膜装置包括：处理室，被配置为容纳待处理的基板，所述处理室执行形成化合物半导体膜的成膜工艺; 加热装置，其构造成加热待加工的基板; 排气装置，其构造成排出处理室的内部;以及处理气体供给机构，其构造成将气体供给到处理室。另外，清洗成膜装置的方法包括：执行清洁处理室内部和部件的处理; 执行分别清洁处理室和构件的内部的下部的过程; 以及执行清洁气体供应通道的过程，其中通过控制处理室内部的压力和温度并从气体供应通道供应清洁气体来执行处理。

3. 发明申请

US20170170065A1 CARBON FILM FORMING METHOD, CARBON FILM FORMING APPARATUS, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20170170065A1
公开(公告)日：2017-06-15
申请号：US15377141
申请日：2016-12-13
申请人： TOKYO ELECTRON LIMITED
发明人： Masayuki KITAMURA , Akira SHIMIZU , Yosuke WATANABE
IPC分类号： H01L21/768 , C23C16/46 , C23C16/52 , H01L21/285 , C23C16/26
CPC分类号： C23C16/46 , C23C16/045 , C23C16/26 , C23C16/56 , H01L21/28556 , H01L21/76877
摘要： A carbon film forming method including: forming a first carbon film so that the first carbon film is embedded in the step shape portion by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object; etching the first carbon film so that a V-shaped etching region, which is wide in a frontage portion of the step shape portion and becomes narrow as going to a bottom portion of the step shape portion, is formed in the first carbon film existing within the step shape portion, by supplying an etching gas to the process target object; and forming a second carbon film so that the second carbon film is embedded in the etching region by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object, in a state where the process target object is heated.

4. 发明申请

US20160265136A1 FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：薄膜成型方法，薄膜成型装置和储存介质
公开(公告)号：US20160265136A1
公开(公告)日：2016-09-15
申请号：US15057563
申请日：2016-03-01
申请人： TOKYO ELECTRON LIMITED
发明人： Kota UMEZAWA , Yosuke WATANABE
IPC分类号： C30B25/16 , C30B29/40 , C30B25/18 , C30B29/06 , C30B25/10 , C30B25/12
摘要： A film forming method for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth under a vacuum atmosphere, includes performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate, and simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer.
摘要翻译：一种用于在基板上形成氮化铝膜的成膜方法，其中在真空气氛下通过外延生长将至少一个表面部分由单晶硅形成，包括执行一次或多次循环，包括第一次供给将含有铝化合物的原料气体输送到基板，以及第二工序，其通过氨气和吸附在硅基板上的铝化合物的反应，供给氨气，形成由氮化铝形成的种子层，同时供给含有铝化合物的原料气体和氨气，以在种子层上形成氮化铝膜。

5. 发明申请

US20170342548A1 METHOD OF FORMING CARBON FILM, APPARATUS OF FORMING CARBON FILM AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20170342548A1
公开(公告)日：2017-11-30
申请号：US15599622
申请日：2017-05-19
申请人： TOKYO ELECTRON LIMITED
发明人： Akira SHIMIZU , Masayuki KITAMURA , Yosuke WATANABE , Akinobu KAKIMOTO
IPC分类号： C23C16/02 , C23C16/26 , C23C16/52 , H01L21/285
CPC分类号： C23C16/0272 , C23C16/26 , C23C16/52 , H01L21/02115 , H01L21/02271 , H01L21/02304
摘要： There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber, and supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature drop gas for dropping a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, pyrolyzing the hydrocarbon-based carbon source gas by heating the hydrocarbon-based carbon source gas at a temperature lower than a pyrolysis temperature of the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD method. An iodine-containing gas is used as the pyrolysis temperature drop gas.

6. 发明申请

US20220246429A1 CARBON FILM DEPOSITION METHOD AND DEPOSITION APPARATUS 有权
公开(公告)号：US20220246429A1
公开(公告)日：2022-08-04
申请号：US17647996
申请日：2022-01-14
申请人： Tokyo Electron Limited
发明人： Yosuke WATANABE , Shota CHIDA
IPC分类号： H01L21/02 , C23C16/26 , C23C16/56
摘要： A carbon film deposition method includes supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition, and supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film. A cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens is repeated a plurality of times.

7. 发明申请

US20170345644A1 CARBON FILM FORMING METHOD, CARBON FILM FORMING APPARATUS, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20170345644A1
公开(公告)日：2017-11-30
申请号：US15601245
申请日：2017-05-22
申请人： TOKYO ELECTRON LIMITED
发明人： Akira SHIMIZU , Masayuki KITAMURA , Yosuke WATANABE
IPC分类号： H01L21/02 , C23C16/46 , C23C16/26 , C23C16/52 , H01L21/677 , H01L21/67
CPC分类号： H01L21/02115 , C23C16/0272 , C23C16/26 , C23C16/46 , C23C16/52 , H01L21/02205 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/67098 , H01L21/67109
摘要： There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber; supplying a gas containing a boron-containing gas into the process chamber to form a seed layer composed of a boron-based thin film on a surface of the workpiece; and subsequently, supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature lowering gas containing a halogen element and which lowers a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, heating the hydrocarbon-based carbon source gas to a temperature lower than the pyrolysis temperature to pyrolyze the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD.

8. 发明申请

US20150221512A1 Method of Growing Gallium Nitride-Based Crystal and Heat Treatment Apparatus 有权
标题翻译：生长氮化镓晶体和热处理设备的方法
公开(公告)号：US20150221512A1
公开(公告)日：2015-08-06
申请号：US14607591
申请日：2015-01-28
申请人： TOKYO ELECTRON LIMITED
发明人： Kota UMEZAWA , Yosuke WATANABE
IPC分类号： H01L21/02 , C30B25/10
CPC分类号： H01L21/02645 , C30B25/10 , C30B25/183 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02483 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate.
摘要翻译：提供了一种生长氮化镓基晶体的方法，包括：在硅衬底上以350-700℃的成膜温度形成包含氮化铝或氧化铝的中间层; 在含有氨或氧的气氛中加热硅衬底和中间层，使得包含在中间层中的氮化铝或氧化铝的晶核分布在硅衬底上; 以及从分布在硅衬底上的晶体核在硅衬底上生长的氮化镓基晶体。

9. 发明申请

US20140038394A1 METHOD AND APPARATUS OF FORMING COMPOUND SEMICONDUCTOR FILM 审中-公开
标题翻译：形成化合物半导体膜的方法和装置
公开(公告)号：US20140038394A1
公开(公告)日：2014-02-06
申请号：US13958195
申请日：2013-08-02
申请人： TOKYO ELECTRON LIMITED
发明人： Yosuke WATANABE , Kota UMEZAWA
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C23C16/303 , C23C16/45578 , C23C16/4584 , H01L21/0242 , H01L21/0262
摘要： A method for forming a compound semiconductor film on a substrate to be processed, which includes: mounting a plurality of substrates to be processed on a substrate mounting jig; loading the substrates to be processed into a processing chamber; and heating the substrates to be processed loaded into the processing chamber; supplying a gas containing one element that constitutes a compound semiconductor, and another gas containing another element that constitutes the compound semiconductor and being different from the one element, into the processing chamber in which the substrates to be processed are loaded; and forming the compound semiconductor film on each of the substrates to be processed.
摘要翻译：一种在待加工基板上形成化合物半导体膜的方法，包括：将多个待处理基板安装在基板安装夹具上; 将待处理的基板装载到处理室中; 并将待加工的基板加热到处理室中; 供给含有构成化合物半导体的一种元素的气体，以及含有构成化合物半导体的不同于该元素的其他元素的另一种气体加载到其中装载有待处理的基板的处理室中; 以及在要处理的每个基板上形成化合物半导体膜。

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