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1. 发明申请

US20170345644A1 CARBON FILM FORMING METHOD, CARBON FILM FORMING APPARATUS, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20170345644A1
公开(公告)日：2017-11-30
申请号：US15601245
申请日：2017-05-22
申请人： TOKYO ELECTRON LIMITED
发明人： Akira SHIMIZU , Masayuki KITAMURA , Yosuke WATANABE
IPC分类号： H01L21/02 , C23C16/46 , C23C16/26 , C23C16/52 , H01L21/677 , H01L21/67
CPC分类号： H01L21/02115 , C23C16/0272 , C23C16/26 , C23C16/46 , C23C16/52 , H01L21/02205 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/67098 , H01L21/67109
摘要： There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber; supplying a gas containing a boron-containing gas into the process chamber to form a seed layer composed of a boron-based thin film on a surface of the workpiece; and subsequently, supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature lowering gas containing a halogen element and which lowers a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, heating the hydrocarbon-based carbon source gas to a temperature lower than the pyrolysis temperature to pyrolyze the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD.

2. 发明申请

US20220270940A1 ABNORMALITY DETECTION METHOD AND PROCESSING APPARATUS 有权
公开(公告)号：US20220270940A1
公开(公告)日：2022-08-25
申请号：US17675225
申请日：2022-02-18
申请人： Tokyo Electron Limited
发明人： Shingo HISHIYA , Nobutoshi TERASAWA , Fumiaki NAGAI , Kazuaki SASAKI , Hiroaki KIKUCHI , Masayuki KITAMURA , Kazuo YABE , Motoshi FUKUDOME , Tatsuya MIYAHARA , Eiji KIKAMA , Yuki TANABE , Tomoyuki NAGATA
IPC分类号： H01L21/66 , C23C16/52 , C23C16/455 , H01L21/02
摘要： An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

3. 发明申请

US20170342548A1 METHOD OF FORMING CARBON FILM, APPARATUS OF FORMING CARBON FILM AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20170342548A1
公开(公告)日：2017-11-30
申请号：US15599622
申请日：2017-05-19
申请人： TOKYO ELECTRON LIMITED
发明人： Akira SHIMIZU , Masayuki KITAMURA , Yosuke WATANABE , Akinobu KAKIMOTO
IPC分类号： C23C16/02 , C23C16/26 , C23C16/52 , H01L21/285
CPC分类号： C23C16/0272 , C23C16/26 , C23C16/52 , H01L21/02115 , H01L21/02271 , H01L21/02304
摘要： There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber, and supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature drop gas for dropping a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, pyrolyzing the hydrocarbon-based carbon source gas by heating the hydrocarbon-based carbon source gas at a temperature lower than a pyrolysis temperature of the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD method. An iodine-containing gas is used as the pyrolysis temperature drop gas.

4. 发明申请

US20170170065A1 CARBON FILM FORMING METHOD, CARBON FILM FORMING APPARATUS, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20170170065A1
公开(公告)日：2017-06-15
申请号：US15377141
申请日：2016-12-13
申请人： TOKYO ELECTRON LIMITED
发明人： Masayuki KITAMURA , Akira SHIMIZU , Yosuke WATANABE
IPC分类号： H01L21/768 , C23C16/46 , C23C16/52 , H01L21/285 , C23C16/26
CPC分类号： C23C16/46 , C23C16/045 , C23C16/26 , C23C16/56 , H01L21/28556 , H01L21/76877
摘要： A carbon film forming method including: forming a first carbon film so that the first carbon film is embedded in the step shape portion by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object; etching the first carbon film so that a V-shaped etching region, which is wide in a frontage portion of the step shape portion and becomes narrow as going to a bottom portion of the step shape portion, is formed in the first carbon film existing within the step shape portion, by supplying an etching gas to the process target object; and forming a second carbon film so that the second carbon film is embedded in the etching region by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object, in a state where the process target object is heated.

5. 发明申请

US20160251755A1 METHOD AND APPARATUS FOR FORMING CARBON FILM 审中-公开
标题翻译：形成碳膜的方法和装置
公开(公告)号：US20160251755A1
公开(公告)日：2016-09-01
申请号：US15045792
申请日：2016-02-17
申请人： TOKYO ELECTRON LIMITED
发明人： Masayuki KITAMURA , Satoshi MIZUNAGA , Akira SHIMIZU , Akinobu KAKIMOTO
IPC分类号： C23C16/02 , C23C16/26
CPC分类号： C23C16/0272 , C23C16/26
摘要： A method for forming a carbon film on a process surface to be processed of a workpiece includes forming a seed layer on the process surface of the workpiece by supplying an aminosilane-based gas, an aminosilane-based gas having high-order equal to or higher than that of aminodisilane, or a nitrogen-containing heterocyclic compound gas onto the process surface; and forming the carbon film on the process surface on which the seed layer is formed by supplying a hydrocarbon-based carbon source gas and a thermal decomposition temperature lowering gas for lowering a thermal decomposition temperature of the hydrocarbon-based carbon source gas onto the process surface on which the seed layer is obtained, and by setting a film formation temperature to be lower than the thermal decomposition temperature of the hydrocarbon-based carbon source gas.
摘要翻译：在工件的加工面上形成碳膜的方法包括：通过供给氨基硅烷系气体，高等级以上的氨基硅烷系气体，在工件的加工面上形成种子层或氨基二硅烷，或含氮杂环化合物气体加到工艺表面上; 以及通过提供烃类碳源气体和用于将烃类碳源气体的热分解温度降低到工艺表面上的热分解降温气体，在其上形成种子层的工艺表面上形成碳膜在其上获得种子层，并且通过将成膜温度设定为低于烃类碳源气体的热分解温度。

6. 发明申请

US20160126106A1 SELECTIVE GROWTH METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：选择生长方法和基板处理装置
公开(公告)号：US20160126106A1
公开(公告)日：2016-05-05
申请号：US14887685
申请日：2015-10-20
申请人： TOKYO ELECTRON LIMITED
发明人： Akira SHIMIZU , Masayuki KITAMURA
IPC分类号： H01L21/3105 , C30B25/18 , C23C16/52 , C30B25/16 , H01L21/02 , H01L21/285
CPC分类号： C30B25/18 , C23C16/04 , C23C16/26 , C23C16/402 , C23C16/52 , C23C16/56 , C30B25/165 , H01L21/02115 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/02312 , H01L21/28568
摘要： There is provided a selective growth method of selectively growing a thin film on exposed surfaces of an underlying insulation film and an underlying metal film, which includes: selectively growing a film whose thickness is decreased by combustion on the underlying metal film using metal of the underlying metal film as a catalyst; and selectively growing a silicon oxide film on the underlying insulation film while combusting the film whose thickness is decreased by combustion.
摘要翻译：提供了选择性地生长薄膜在下面的绝缘膜和下面的金属膜的暴露表面上的选择性生长方法，其包括：使用下面的金属的金属，选择性地生长其厚度通过燃烧在下面的金属膜上而降低的膜金属膜作催化剂; 并且在通过燃烧使其厚度减小的膜燃烧时，在下面的绝缘膜上选择性地生长氧化硅膜。

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