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1. 发明授权

US11574798B2 Plasma processing apparatus and control method 有权
公开(公告)号：US11574798B2
公开(公告)日：2023-02-07
申请号：US16872432
申请日：2020-05-12
申请人： TOKYO ELECTRON LIMITED
发明人： Chishio Koshimizu , Shin Hirotsu
IPC分类号： H01J37/16 , H01J37/32 , H01J37/04 , H01J37/24
摘要： A plasma processing apparatus includes a container; a stage disposed in the container and including an electrode; a plasma source that generates plasma in the container; a bias power supply that periodically supplies a pulsed negative DC voltage to the electrode; an edge ring disposed to surround a substrate placed on the stage; and a DC power supply that supplies a DC voltage to the edge ring. The DC power supply supplies a first DC voltage in a first time period when the pulsed negative DC voltage is not supplied to the electrode, and supplies a second DC voltage in a second time period when the pulsed negative DC voltage is supplied to the electrode.

2. 发明授权

US09312105B2 Method for etching insulation film 有权
标题翻译：蚀刻绝缘膜的方法
公开(公告)号：US09312105B2
公开(公告)日：2016-04-12
申请号：US14730394
申请日：2015-06-04
申请人： TOKYO ELECTRON LIMITED
发明人： Akira Takahashi , Kei Nakayama , Yoshiki Igarashi , Shin Hirotsu
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/67
CPC分类号： H01J37/32165 , H01J37/32009 , H01J37/32082 , H01J37/32137 , H01J37/32146 , H01J37/32449 , H01J2237/334 , H01L21/02164 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/67069 , H01L21/76802
摘要： Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON.
摘要翻译：公开了一种用于蚀刻加工对象物体的绝缘膜的方法。该方法包括：在第一项中，周期性地切换高频功率的ON和OFF，以激发含有碳氟化合物的处理气体，并将其供应到等离子体处理装置的处理容器中; 并且在第一项之后的第二项中，将高频功率设定为连续接通，以激励供给到处理容器中的处理气体。在由高频接通的术语和第一项中高频功率关闭的术语组成的一个周期中，第二项长于高频功率导通的术语。

3. 发明授权

US10672589B2 Plasma processing apparatus and control method 审中-公开
公开(公告)号：US10672589B2
公开(公告)日：2020-06-02
申请号：US16597193
申请日：2019-10-09
申请人： TOKYO ELECTRON LIMITED
发明人： Chishio Koshimizu , Shin Hirotsu
IPC分类号： H05B31/36 , H01J7/24 , H01J37/32 , H01J37/16 , H01J37/04 , H01J37/24
摘要： A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

4. 发明授权

US11830704B2 Plasma processing apparatus and control method 有权
公开(公告)号：US11830704B2
公开(公告)日：2023-11-28
申请号：US18101468
申请日：2023-01-25
申请人： TOKYO ELECTRON LIMITED
发明人： Chishio Koshimizu , Shin Hirotsu
IPC分类号： H01J37/16 , H01J37/32 , H01J37/04 , H01J37/24
CPC分类号： H01J37/32027 , H01J37/04 , H01J37/16 , H01J37/32642 , H01J37/241 , H01J37/32082
摘要： A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

5. 发明授权

US11764034B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US11764034B2
公开(公告)日：2023-09-19
申请号：US16878098
申请日：2020-05-19
申请人： Tokyo Electron Limited
发明人： Chishio Koshimizu , Shin Hirotsu , Takenobu Ikeda , Koichi Nagami , Shinji Himori
IPC分类号： H01J37/32 , H05H1/00 , H01H1/46
CPC分类号： H01J37/32183 , H01H1/46 , H01J37/32568 , H01J37/32715 , H05H1/01
摘要： A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

6. 发明授权

US09418863B2 Method for etching etching target layer 有权
标题翻译：刻蚀目标层的方法
公开(公告)号：US09418863B2
公开(公告)日：2016-08-16
申请号：US14709534
申请日：2015-05-12
申请人： TOKYO ELECTRON LIMITED
发明人： Shin Hirotsu , Yoshiki Igarashi , Tomonori Miwa , Hiroshi Okada
IPC分类号： H01L21/311
CPC分类号： H01L21/311 , H01J37/32091 , H01J37/32165 , H01L21/31116 , H01L21/31144 , H01L27/11556 , H01L27/11582
摘要： Disclosed is an etching method for etching an etching target layer. The etching method includes: a first step of depositing a plasma reaction product on a mask layer made of an organic film formed on the etching target layer; and after the first step, a second step of etching the etching target layer. The mask layer includes a coarse region in which a plurality of openings are formed, and a dense region surrounding the coarse region. The mask layer exists more densely in the dense region than in the coarse region. The coarse region includes a first region and a second region positioned close to the dense region compared to the first region. In the second step of the etching method, a width of the openings in the first region becomes narrower than a width of the openings in the second region.
摘要翻译：公开了蚀刻蚀刻目标层的蚀刻方法。蚀刻方法包括：在由蚀刻目标层上形成的有机膜制成的掩模层上沉积等离子体反应产物的第一步骤; 在第一步骤之后，蚀刻蚀刻目标层的第二步骤。掩模层包括其中形成有多个开口的粗糙区域和围绕粗糙区域的致密区域。在密集区域中，掩模层比粗区域更密集地存在。粗区域包括与第一区域相比位于靠近致密区域的第一区域和第二区域。在蚀刻方法的第二步骤中，第一区域中的开口的宽度变得比第二区域中的开口的宽度窄。

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