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1. 发明授权

US10825663B2 Plasma processing apparatus 有权
公开(公告)号：US10825663B2
公开(公告)日：2020-11-03
申请号：US15840636
申请日：2017-12-13
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuya Nagaseki , Shinji Himori , Mitsunori Ohata
IPC分类号： H01J37/32 , H01L21/67
摘要： Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.

2. 发明授权

US10699935B2 Semiconductor manufacturing device and processing method 有权
公开(公告)号：US10699935B2
公开(公告)日：2020-06-30
申请号：US15850875
申请日：2017-12-21
申请人： TOKYO ELECTRON LIMITED
发明人： Shinji Himori , Yoshiyuki Kobayashi , Takehiro Kato , Etsuji Ito
IPC分类号： H01L21/687 , H01L21/3065 , H01L21/67 , H01L21/306
摘要： A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

3. 发明申请

US20150072534A1 ETCHING METHOD OF MULTILAYER FILM 审中-公开
标题翻译：多层膜的蚀刻方法
公开(公告)号：US20150072534A1
公开(公告)日：2015-03-12
申请号：US14519348
申请日：2014-10-21
申请人： Tokyo Electron Limited
发明人： Shinji Himori , Etsuji Ito , Akihiro Yokota , Shu Kusano , Hiroaki Ishizuka , Kazuya Nagaseki
IPC分类号： H01L21/311 , H01L21/308
CPC分类号： H01L21/31116 , H01J37/32165 , H01J37/3266 , H01J37/32669 , H01L21/3081 , H01L21/31138
摘要： A plasma processing apparatus for performing a plasma process on a substrate includes: a mounting table configured to mount thereon the substrate; an electromagnet including a core member and a plurality of coils; a current source connected to both ends of the coils for supplying currents to the coils; and a control unit configured to control the current source to start or stop and to control a current value of the current source. The core member is made of a magnetic material and has a structure including a column-shaped member, multiple cylindrical members, and a base member. The plurality of coils are accommodated in grooves and wound around an outer peripheral surface of the column-shaped member and the cylindrical members, and the grooves are formed between the column-shaped member and one of the cylindrical members and between the cylindrical members.
摘要翻译：一种用于在衬底上执行等离子体处理的等离子体处理装置包括：安装台，其被配置为安装在其上; 电磁体，包括芯部件和多个线圈; 连接到线圈两端的电流源，用于向线圈提供电流; 以及控制单元，被配置为控制当前源开始或停止并且控制当前源的当前值。芯构件由磁性材料制成，并且具有包括柱状构件，多个圆柱形构件和基底构件的结构。多个线圈被容纳在槽中并缠绕在柱状构件和圆柱形构件的外周表面上，并且槽形成在柱状构件和一个圆柱形构件之间以及圆柱形构件之间。

4. 发明申请

US20140346040A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20140346040A1
公开(公告)日：2014-11-27
申请号：US14370579
申请日：2013-01-17
申请人： TOKYO ELECTRON LIMITED
发明人： Akihiro Yokota , Etsuji Ito , Shinji Himori
IPC分类号： H01L21/67 , H01J37/32
摘要： A substrate processing apparatus can easily control a plasma intensity distribution in a processing space. A substrate processing apparatus 10 generates an electric field E in a processing space S between a susceptor 12 to which a high frequency power is applied and an upper electrode 13 provided to face the susceptor 12, and also performs a plasma process on a wafer W mounted on the susceptor 12 with plasma generated by the electric field E. The substrate processing apparatus 10 includes multiple electromagnets 20 arranged on a top surface 13a of the upper electrode 13 opposite to the processing space S, and each of the electromagnets 20 is radially arranged with respect to a central portion C of the upper electrode 13 facing a central portion of the wafer W.
摘要翻译：基板处理装置可以容易地控制处理空间中的等离子体强度分布。基板处理装置10在施加高频电力的基座12与设置在基座12之间的上部电极13之间的处理空间S中产生电场E，并对安装的晶片W进行等离子体处理在基体12上具有由电场E产生的等离子体。基板处理装置10包括布置在上电极13的与处理空间S相对的顶表面13a上的多个电磁体20，并且每个电磁体20径向布置有相对于面向晶片W的中心部分的上电极13的中心部分C.

5. 发明授权

US08703002B2 Plasma processing apparatus, plasma processing method and storage medium 有权
标题翻译：等离子体处理装置，等离子体处理方法和存储介质
公开(公告)号：US08703002B2
公开(公告)日：2014-04-22
申请号：US13737313
申请日：2013-01-09
申请人： Tokyo Electron Limited
发明人： Tatsuo Matsudo , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
摘要翻译：一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位以预定间隔交替重复。

6. 发明申请

US20220028665A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20220028665A1
公开(公告)日：2022-01-27
申请号：US17495908
申请日：2021-10-07
申请人： Tokyo Electron Limited
发明人： Koichi Nagami , Kazunobu Fujiwara , Tatsuro Ohshita , Takashi Dokan , Koji Maruyama , Kazuya Nagaseki , Shinji Himori
IPC分类号： H01J37/32
摘要： A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

7. 发明授权

US11133157B2 Plasma processing apparatus 有权
公开(公告)号：US11133157B2
公开(公告)日：2021-09-28
申请号：US16389434
申请日：2019-04-19
申请人： TOKYO ELECTRON LIMITED
发明人： Akihiro Yokota , Shinji Himori , Tatsuro Ohshita , Shu Kusano
IPC分类号： C23C16/50 , C23C16/455 , H01J37/32
摘要： Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

8. 发明申请

US20190256962A1 PLASMA SPRAYING APPARATUS AND SPRAYING CONTROL METHOD 审中-公开
公开(公告)号：US20190256962A1
公开(公告)日：2019-08-22
申请号：US16348577
申请日：2017-10-27
申请人： Tokyo Electron Limited
发明人： Yoshiyuki Kobayashi , Shinji Himori , Naokazu Furuya
IPC分类号： C23C4/134 , H05H1/40 , H05H1/42
摘要： A plasma spraying apparatus includes a supplier configured to carry powder of a spray material by a plasma generation gas and jet the powder of the spray material and the plasma generation gas from an opening at a leading end thereof; a plasma generator configured to form, by using the jetted plasma generation gas, a plasma having an axis center shared by the supplier; a magnetic field generator configured to generate a magnetic field in a space where the plasma is formed; and a controller configured to control the magnetic field generator to control a deflection of the plasma.

9. 发明授权

US10388544B2 Substrate processing apparatus and substrate processing method 有权
公开(公告)号：US10388544B2
公开(公告)日：2019-08-20
申请号：US14626277
申请日：2015-02-19
申请人： KABUSHIKI KAISHA TOSHIBA , TOKYO ELECTRON LIMITED
发明人： Akio Ui , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
IPC分类号： H01L21/67 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/66
摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

10. 发明授权

US12033832B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US12033832B2
公开(公告)日：2024-07-09
申请号：US17834948
申请日：2022-06-08
申请人： Tokyo Electron Limited
发明人： Shinji Kubota , Kazuya Nagaseki , Shinji Himori , Koichi Nagami
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32422
摘要： A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

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