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1. 发明申请

US20080160170A1 TECHNIQUE FOR USING AN IMPROVED SHIELD RING IN PLASMA-BASED ION IMPLANTATION 审中-公开
标题翻译：在等离子体离子植入中使用改进的护环的技术
公开(公告)号：US20080160170A1
公开(公告)日：2008-07-03
申请号：US11617348
申请日：2006-12-28
申请人： Timothy Miller , Edmund J. Winder , Richard J. Hetel , Harold M. Persing , Vikram Singh
发明人： Timothy Miller , Edmund J. Winder , Richard J. Hetel , Harold M. Persing , Vikram Singh
IPC分类号： C23C14/02 , B05C11/00
CPC分类号： H01J37/32082 , H01J37/32018 , H01J37/32412 , H01J37/32422 , H01J37/32642 , H01J37/32935 , H01J37/3299
摘要： A technique for using an improved shield ring in plasma-based ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for plasma-based ion implantation, such as radio frequency plasma doping (RF-PLAD). The apparatus and method may comprise a shield ring positioned on a same plane as and around a periphery of a target wafer, wherein the shield ring comprises an aperture-defining device for defining an area of at least one aperture, a Faraday cup positioned under the at least one aperture, and dose count electronics connected the Faraday cup for calculating ion dose rate. The at least one aperture may comprise at least one of a circular, arc-shaped, slit-shaped, ring-shaped, rectangular, triangular, and elliptical shape. The aperture-defining device may comprise at least one of silicon, silicon carbide, carbon, and graphite.
摘要翻译：公开了一种在等离子体离子注入中使用改进的屏蔽环的技术。在一个特定的示例性实施例中，该技术可以被实现为用于基于等离子体的离子注入的装置和方法，例如射频等离子体掺杂（RF-PLAD）。该装置和方法可以包括一个屏蔽环，该屏蔽环与目标晶片的周边定位在同一平面上，其中屏蔽环包括用于限定至少一个孔的区域的孔限定装置，位于下方的法拉第杯至少一个孔径和剂量计数电子元件连接法拉第杯以计算离子剂量率。至少一个孔可以包括圆形，弧形，狭缝状，环形，矩形，三角形和椭圆形中的至少一个。孔限定装置可以包括硅，碳化硅，碳和石墨中的至少一种。

2. 发明申请

US20090104719A1 Plasma Doping System with In-Situ Chamber Condition Monitoring 审中-公开
标题翻译：等离子体掺杂系统与原位室状态监测
公开(公告)号：US20090104719A1
公开(公告)日：2009-04-23
申请号：US11877312
申请日：2007-10-23
申请人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
发明人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.
摘要翻译：等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。测量吸附到基底的一定剂量的离子。执行至少一个传感器测量以确定等离子体室的状态。此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

3. 发明授权

US08603591B2 Enhanced etch and deposition profile control using plasma sheath engineering 有权
标题翻译：使用等离子体护套工程的增强蚀刻和沉积轮廓控制
公开(公告)号：US08603591B2
公开(公告)日：2013-12-10
申请号：US12645638
申请日：2009-12-23
申请人： Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
IPC分类号： H05H1/24
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译：使用等离子体处理工具将材料沉积在工件上。例如，公开了一种用于材料的共形沉积的方法。在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。通过随时间改变入射角的这个范围，可以沉积各种不同的特征。在另一个实施例中，使用等离子体处理工具来蚀刻工件。在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

4. 发明申请

US20090004836A1 PLASMA DOPING WITH ENHANCED CHARGE NEUTRALIZATION 审中-公开
标题翻译：具有增强电荷中和的等离子体掺杂
公开(公告)号：US20090004836A1
公开(公告)日：2009-01-01
申请号：US11771190
申请日：2007-06-29
申请人： Vikram Singh , Timothy Miller , Bernard Lindsay
发明人： Vikram Singh , Timothy Miller , Bernard Lindsay
IPC分类号： H01L21/26 , C23C16/00 , H05H1/24
CPC分类号： C23C14/345 , H01J37/321 , H01J37/32165 , H01J37/32412 , H01L21/32136
摘要： A plasma doping apparatus includes a pulsed power supply that generates a pulsed waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a pulsed plasma with the first power level during the first period and with the second power level during the second period. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage during a first period and second voltage with a negative potential that attract ions in the plasma to the substrate for plasma doping during a second period. At least one of the first and second power levels of the RF waveform is chosen to at least partially neutralize charge accumulating on the substrate.
摘要翻译：等离子体掺杂装置包括脉冲电源，其生成具有第一功率电平的第一周期和具有第二功率电平的第二周期的脉冲波形。等离子体源在第一周期期间产生具有第一功率电平的脉冲等离子体，并且在第二周期期间产生第二功率电平。偏置电压电源在与支撑衬底的压板电连接的输出端产生偏置电压波形。偏置电压波形在第一时段期间具有第一电压，在第二周期期间具有将等离子体中的离子吸引到衬底以进行等离子体掺杂的具有负电位的第二电压。选择RF波形的第一和第二功率电平中的至少一个以至少部分地中和在衬底上累积的电荷。

5. 发明申请

US20070087574A1 CONFORMAL DOPING APPARATUS AND METHOD 有权
标题翻译：一致的装置和方法
公开(公告)号：US20070087574A1
公开(公告)日：2007-04-19
申请号：US11163307
申请日：2005-10-13
申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
发明人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
IPC分类号： H01L21/31 , H01L21/469 , B05C11/00
CPC分类号： H01J37/32623 , H01J37/32412 , H01J37/32697 , H01L21/2236 , H01L21/26506 , H01L21/26526 , H01L21/26586 , H01L29/66803
摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
摘要翻译：掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。惰性进料气体产生惰性离子。向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

6. 发明申请

US20060063360A1 Technique for boron implantation 有权
标题翻译：硼植入技术
公开(公告)号：US20060063360A1
公开(公告)日：2006-03-23
申请号：US11227079
申请日：2005-09-16
申请人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
发明人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
IPC分类号： H01L21/04
CPC分类号： H01L21/2236 , H01J37/32082 , H01J37/32412 , H01L21/26513
摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
摘要翻译：公开了硼注入技术。在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。该装置可以包括反应室。该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

7. 发明授权

US08101510B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08101510B2
公开(公告)日：2012-01-24
申请号：US12644103
申请日：2009-12-22
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： H01L21/26 , H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

8. 发明授权

US07524743B2 Conformal doping apparatus and method 有权
标题翻译：保形掺杂装置及方法
公开(公告)号：US07524743B2
公开(公告)日：2009-04-28
申请号：US11163307
申请日：2005-10-13
申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Jacques Winder
发明人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Jacques Winder
IPC分类号： H01L21/423 , H01L21/425
CPC分类号： H01J37/32623 , H01J37/32412 , H01J37/32697 , H01L21/2236 , H01L21/26506 , H01L21/26526 , H01L21/26586 , H01L29/66803
摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
摘要翻译：掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。惰性进料气体产生惰性离子。向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

9. 发明申请

US20070224840A1 Method of Plasma Processing with In-Situ Monitoring and Process Parameter Tuning 审中-公开
标题翻译：等离子体处理方法采用现场监测和工艺参数调整
公开(公告)号：US20070224840A1
公开(公告)日：2007-09-27
申请号：US11687822
申请日：2007-03-19
申请人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
发明人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
IPC分类号： H01L21/00 , H01L21/336 , H01L21/22 , H01L21/38
CPC分类号： H01J37/32935 , H01J37/32412 , H01J37/3299 , H01L22/20
摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
摘要翻译：选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。从配方参数数据库确定初始配方参数。进行至少一个等离子体掺杂条件的原位测量。至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。

10. 发明申请

US20120000421A1 CONTROL APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION OF A DIELECTRIC SUBSTRATE 审中-公开
标题翻译：用于等离子体沉积离子植入基板的控制装置
公开(公告)号：US20120000421A1
公开(公告)日：2012-01-05
申请号：US12829794
申请日：2010-07-02
申请人： Timothy Miller , Vikram Singh , Ludo Godet , Christopher J. Leavitt
发明人： Timothy Miller , Vikram Singh , Ludo Godet , Christopher J. Leavitt
IPC分类号： C23C14/48 , C23C14/50 , C23C14/52 , H05F3/00
CPC分类号： H01J37/32935 , C23C14/48 , C23C14/542 , H01J37/32412
摘要： A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.
摘要翻译：一种用于等离子体浸没离子注入电介质基板的控制装置，其包括设置在等离子体室中产生的等离子体之上的电极。电极以比被配置为接收离子注入的衬底或阴极的电位高的电位的负电压脉冲偏置。电极更为负，从而产生的二次电子产生的电子足够的能量来克服基底周围的高电压护套的负电压，从而到达衬底。这些电子朝向衬底加速，以中和衬底上的电荷积聚。

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