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1. 发明授权

US06169041A Method for enhancing the reliability of a dielectric layer of a semiconductor wafer 失效
标题翻译：提高半导体晶片的电介质层的可靠性的方法
公开(公告)号：US06169041A
公开(公告)日：2001-01-02
申请号：US09431941
申请日：1999-11-01
申请人： Tien-Jui Liu , Chun-Huang Chen
发明人： Tien-Jui Liu , Chun-Huang Chen
IPC分类号： H01L2131
CPC分类号： H01L21/28194 , H01L21/26506 , H01L21/2822 , H01L28/40 , Y10S438/954
摘要： The present invention provides a method for enhancing the reliability of a dielectric layer of a semiconductor wafer. The dielectric layer is formed above a silicon element. First, the method implants argon ions with a dosage of around 1015˜1016 ions/cm3 and an energy of around 3˜50 KeV into the silicon element to form an ion implantation layer. Then, the dielectric layer is formed on a predetermined area of the silicon element. The ion implantation layer prevents oxygen ions, impurities and charge carriers from converging on the surface of the silicon element so as to enhance the reliability of the dielectric layer.
摘要翻译：本发明提供一种提高半导体晶片的电介质层的可靠性的方法。电介质层形成在硅元件上方。首先，该方法将约1015〜1016个离子/ cm 3的量的氩离子和约3〜50KeV的能量注入到硅元件中以形成离子注入层。然后，在硅元件的预定区域上形成电介质层。离子注入层防止氧离子，杂质和电荷载流子会聚在硅元件的表面上，从而提高电介质层的可靠性。

2. 发明授权

US6134385A Water free furnace tube with self-heating quartz plug 有权
标题翻译：无水炉管采用自加热石英塞
公开(公告)号：US6134385A
公开(公告)日：2000-10-17
申请号：US309216
申请日：1999-05-12
申请人： Chun-Huang Chen , Tien-Jui Liu
发明人： Chun-Huang Chen , Tien-Jui Liu
IPC分类号： C30B25/06 , C30B31/10 , H01L21/00 , H01L21/205
CPC分类号： H01L21/67098 , C30B25/06 , C30B31/10
摘要： A furnace tube with quartz plug is configured to have an oxidation performed therein, and at least one elongated protruding portion with an opening on one side of the tube. The furnace also includes a quartz plug with a portion thereof inserted inside the elongated protruding portion, and with another portion thereof inserted into the tube. Accordingly, water resided in a gap between inner surface of the elongated protruding portion and outer surface of the quartz plug can be evaporated by self-heating of the quartz plug.
摘要翻译：具有石英塞的炉管被配置为在其中进行氧化，并且至少一个细长的突出部分在管的一侧具有开口。该炉还包括一个石英塞，其一部分插入在细长突出部分的内部，另一部分插入管中。因此，通过石英塞的自加热，能够使长期突出部的内表面和石英塞的外表面之间的间隙中的水蒸发。

3. 发明授权

US06334404B1 Method and apparatus for reducing particle contamination on wafers 失效
标题翻译：降低晶圆上颗粒污染的方法和装置
公开(公告)号：US06334404B1
公开(公告)日：2002-01-01
申请号：US09314631
申请日：1999-05-19
申请人： Tien-Jui Liu , Ling-Hsin Tseng
发明人： Tien-Jui Liu , Ling-Hsin Tseng
IPC分类号： C23C1600
CPC分类号： H01L21/67316 , C23C16/4401 , C23C16/4581 , C30B25/08 , C30B25/12 , C30B31/10 , C30B31/14
摘要： A method and apparatus for reducing particle contamination on wafers is disclosed. The method includes providing a semiconductor furnace system having an ideal reaction chamber, an electrostatic generator, a conducting wire, and a conductive ring. Moreover, an insulating layer is coated over the entire wafer boat carrier, that is part of the reaction chamber. Charges with a first polarity are generated after a reaction process carried out inside the chamber and before the “vacuum breaking” stage. These charges spread evenly across the entire exposed surface of the wafer boat carrier and repulse particles carrying the same polarity away from the wafers that are in process.
摘要翻译：公开了一种用于减少晶片上的颗粒污染的方法和装置。该方法包括提供具有理想反应室，静电发生器，导线和导电环的半导体炉系统。此外，绝缘层涂覆在整个晶片舟状载体上，该载体是反应室的一部分。在室内进行反应处理之后，在“真空破坏”阶段之前产生具有第一极性的电荷。这些电荷均匀地分布在晶片舟状载体的整个暴露表面上，并且将与相当极性相反的粒子从与正在处理的晶片相分离。

4. 发明授权

US06246116B1 Buried wiring line 失效
标题翻译：埋地线
公开(公告)号：US06246116B1
公开(公告)日：2001-06-12
申请号：US09316668
申请日：1999-05-21
申请人： Tien-Jui Liu
发明人： Tien-Jui Liu
IPC分类号： H01L2348
CPC分类号： H01L23/5329 , H01L21/76895 , H01L23/53271 , H01L2924/0002 , H01L2924/00
摘要： A buried wiring line. The structure of the buried wiring line at least comprises a conductive doped region in a provided substrate and a silicon nitride region formed around the conductive doped region in the substrate. The silicon nitride region, which comprises a first silicon nitride below the doped region and a second silicon nitride layer beside the doped region, isolates the buried wiring line from the substrate.
摘要翻译：埋地线。掩埋布线的结构至少包括在所提供的衬底中的导电掺杂区域和形成在衬底中的导电掺杂区周围的氮化硅区域。在掺杂区域下方包含第一氮化硅的氮化硅区域和掺杂区域旁边的第二氮化硅层将掩埋布线与衬底隔离。

5. 发明授权

US6109915A Drafting apparatus 有权
标题翻译：起草设备
公开(公告)号：US6109915A
公开(公告)日：2000-08-29
申请号：US208281
申请日：1998-12-08
申请人： Tien-Jui Liu , Eric Chu , Tony Chen
发明人： Tien-Jui Liu , Eric Chu , Tony Chen
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , C30B31/16 , F27D5/00
CPC分类号： C30B25/14 , C23C16/45591 , C30B31/16 , Y10S438/935
摘要： A drafting apparatus in a furnace. A buffer board having a plurality of gas intakes is disposed in a front end of the drafting apparatus. A laminar flow board having a plurality of gas outtakes is disposed in a rear end of the drafting apparatus. A drafting region is enclosed by the drafting apparatus. The drafting region comprises at least one drafting board to draft and redirect the gas flow. A laminar flow is then obtained to flow through the outtakes on the laminar board.
摘要翻译：炉中的牵伸装置。具有多个进气口的缓冲板设置在牵伸装置的前端。具有多个气体排出口的层流板设置在牵伸装置的后端。牵伸区域由牵伸装置包围。起草区域包括至少一个牵伸板，以起草和重定向气流。然后获得层流以流过层板上的出口。

6. 发明授权

US06308738B1 Drafting apparatus 有权
标题翻译：起草设备
公开(公告)号：US06308738B1
公开(公告)日：2001-10-30
申请号：US09451285
申请日：1999-11-30
申请人： Tien-Jui Liu , Eric Chu , Tony Chen
发明人： Tien-Jui Liu , Eric Chu , Tony Chen
IPC分类号： F23D1462
CPC分类号： C30B25/14 , C23C16/45591 , C30B31/16 , Y10S438/935 , Y10T137/87281
摘要： A drafting apparatus in a furnace. A buffer board having a plurality of gas intakes is disposed in a front end of the drafting apparatus. A laminar flow board having a plurality of gas outtakes is disposed in a rear end of the drafting apparatus. A drafting region is enclosed by the drafting apparatus. The drafting region comprises at least one drafting board to draft and redirect the gas flow. A laminar flow is then obtained to flow through the outtakes on the laminar board.
摘要翻译：炉中的牵伸装置。具有多个进气口的缓冲板设置在牵伸装置的前端。具有多个气体排出口的层流板设置在牵伸装置的后端。牵伸区域由牵伸装置包围。起草区域包括至少一个牵伸板，以起草和重定向气流。然后获得层流以流过层板上的出口。

7. 发明授权

US06159802A Method of forming a stack-gate of a non-volatile memory on a semiconductor wafer 有权
标题翻译：在半导体晶片上形成非易失性存储器的堆叠栅极的方法
公开(公告)号：US06159802A
公开(公告)日：2000-12-12
申请号：US352750
申请日：1999-07-14
申请人： Yo-Yi Gong , Tien-Jui Liu
发明人： Yo-Yi Gong , Tien-Jui Liu
IPC分类号： H01L21/28 , H01L21/8247
CPC分类号： H01L27/11526 , H01L21/28273 , H01L27/11536 , Y10S438/974
摘要： The invention relates to a method of forming a stack-gate of a non-volatile memory. In this method, the stack-gate is formed in a predetermined region of the substrate of a semiconductor wafer. Then, a gate oxide layer, a first gate conductive layer, a dielectric layer, and a passivation layer are formed followed by lithography and stripping of the photo-resist layer and removal of the passivation layer from the dielectric layer. Finally, a second gate conductive layer is formed on the dielectric layer as the control gate of the stack-gate. The passivation layer can prevent the dielectric layer from being damaged during stripping of the photo-resist layer.
摘要翻译：本发明涉及一种形成非易失性存储器的堆叠栅极的方法。在该方法中，堆叠栅极形成在半导体晶片的基板的预定区域中。然后，形成栅极氧化物层，第一栅极导电层，电介质层和钝化层，然后光致抗蚀剂层的光刻和剥离以及从电介质层去除钝化层。最后，在作为堆叠栅极的控制栅极的电介质层上形成第二栅极导电层。钝化层可以防止在剥离光致抗蚀剂层期间介电层被损坏。

8. 发明授权

US6053430A Horizontal injector for oxidation furnace 失效
标题翻译：氧化炉卧式注射器
公开(公告)号：US6053430A
公开(公告)日：2000-04-25
申请号：US72319
申请日：1998-05-04
申请人： Chun-Shen Wu , Yu-Shan Tai , Tien-Jui Liu
发明人： Chun-Shen Wu , Yu-Shan Tai , Tien-Jui Liu
IPC分类号： F23D14/22 , F23D14/32 , F23D11/10
CPC分类号： F23D14/32 , F23D14/22
摘要： A horizontal oxidation furnace injector comprising an inner tube and an outer tube. The inner tube has an inner tube inlet and an inner tube outlet. The inner tube inlet is used for receiving a first gas and the inner tube outlet is used for outputting the first gas. The outer tube has a branch tube and an outer tube outlet. The branch tube further includes an outer tube inlet. The outer tube inlet is used for receiving a second gas, and the outer tube outlet is used for outputting the secord gas. Furthermore, the outer tube outlet and the inner tube outlet are at the same end. In addition, part of the inner tube is enclosed by the outer tube of the injector while the remainder of the inner tube is exposed, and the inner tube has no bends.
摘要翻译：一种卧式氧化炉喷射器，包括内管和外管。内管具有内管入口和内管出口。内管入口用于接收第一气体，内管出口用于输出第一气体。外管具有支管和外管出口。分支管还包括外管入口。外管入口用于接收第二气体，外管出口用于输出第二气体。此外，外管出口和内管出口处于同一端。此外，内管的一部分被喷射器的外管封闭，而内管的其余部分被暴露，并且内管没有弯曲。

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