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1. 发明授权

US08859409B2 Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body 有权
标题翻译：在半导体本体中包含掺杂剂区域的半导体元件和半导体本体中的掺杂剂区域的制造方法
公开(公告)号：US08859409B2
公开(公告)日：2014-10-14
申请号：US13613985
申请日：2012-09-13
申请人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
发明人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
IPC分类号： H01L21/425 , H01L29/167 , H01L29/36 , H01L29/32 , H01L29/861 , H01L21/265
CPC分类号： H01L29/167 , H01L21/265 , H01L21/26506 , H01L29/0603 , H01L29/32 , H01L29/36 , H01L29/7393 , H01L29/7801 , H01L29/861
摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
摘要翻译：半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。掺杂剂区域沿着从第一侧到第二侧的方向具有至少10μm的长度的部分L延伸。掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。

2. 发明申请

US20130249058A1 SEMICONDUCTOR COMPONENT COMPRISING A DOPANT REGION IN A SEMICONDUCTOR BODY AND A METHOD FOR PRODUCING A DOPANT REGION IN A SEMICONDUCTOR BODY 有权
标题翻译：包含半导体体中的掺杂区域的半导体元件和用于在半导体体内产生掺杂区域的方法
公开(公告)号：US20130249058A1
公开(公告)日：2013-09-26
申请号：US13613985
申请日：2012-09-13
申请人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
发明人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
IPC分类号： H01L29/36 , H01L21/265
CPC分类号： H01L29/167 , H01L21/265 , H01L21/26506 , H01L29/0603 , H01L29/32 , H01L29/36 , H01L29/7393 , H01L29/7801 , H01L29/861
摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
摘要翻译：半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。掺杂剂区域沿着沿着从第一侧到第二侧的方向具有至少10微米的长度的区段L延伸。掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。

3. 发明授权

US07687826B2 Thyristor with recovery protection 有权
标题翻译：晶闸管具有恢复保护
公开(公告)号：US07687826B2
公开(公告)日：2010-03-30
申请号：US11463188
申请日：2006-08-08
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L31/1113 , H01L29/0692 , H01L29/083 , H01L29/7428
摘要： A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).
摘要翻译：主晶闸管（1）具有集成到其n掺杂发射极（25）电连接到主晶闸管控制端子（140）的驱动晶闸管（2）的恢复保护。此外，驱动晶闸管（2）的p掺杂发射极（28）电连接到主晶闸管（1）的p掺杂发射极（18）。在这种情况下，提供了用于实现恢复保护的各种可选措施。一种制造具有主晶闸管和驱动晶闸管的晶闸管系统的方法，所述驱动晶闸管（2）具有阳极短路（211），包括将粒子（230）引入所述半导体本体（200）的目标区域（225）所述驱动晶闸管（2），所述半导体本体（200）的与所述后侧（202）相对的所述目标区域（225）与所述前侧（201）之间的距离小于或等于所述半导体本体掺杂发射极（28）和前侧（201）。

4. 发明授权

US06723586B1 Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor 失效
标题翻译：晶闸管提供集成电路整流恢复时间保护及其生产方法
公开(公告)号：US06723586B1
公开(公告)日：2004-04-20
申请号：US10018592
申请日：2002-04-01
申请人： Franz Josef Niedernostheide , Hans-Joachim Schulze
发明人： Franz Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L21332
CPC分类号： H01L21/263 , H01L29/1016 , H01L29/32 , H01L29/7428
摘要： A thyristor includes a semiconductor body having an anode-side base zone of a first conductance type, and having a cathode-side base zone of the second, opposite conductance type, and has cathode-side and anode-side emitter zones. An anode-side defect zone is included within the anode-side base zone, in which the free charge carriers have a reduced life, with a predetermined thickness of at least 20 &mgr;m. The defect zone may be produced by anode-side irradiation of predetermined regions of the semiconductor body with charged particles, and with heat treatment of the semiconductor body in order to stabilize the defect zone.
摘要翻译：晶闸管包括具有第一导电类型的阳极侧基极区和具有第二相反电导型的阴极侧基极区并具有阴极侧和阳极侧发射极区的半导体本体。阳极侧缺陷区域包括在阳极侧基区内，其中游离载流子具有降低的寿命，预定厚度至少为20μm。可以通过用带电粒子的半导体本体的预定区域的阳极侧照射以及半导体本体的热处理以使缺陷区域稳定来产生缺陷区域。

5. 发明授权

US06489187B2 Method for setting the breakover voltage of a thyristor 有权
公开(公告)号：US06489187B2
公开(公告)日：2002-12-03
申请号：US09935359
申请日：2001-08-22
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide
IPC分类号： H01L21332
CPC分类号： H01L21/263 , H01L29/1016 , H01L29/32 , H01L29/7428
摘要： The effective doping profile of a finished thyristor is altered with helium ions radiated into a region provided for triggering the thyristor in such a way that the breakover voltage for overhead ignition is increased or reduced. Doping profile changes made in the cathode side half of the anode side base provide effective results, e.g. in the vicinity of the pn junction between the anode side and the cathode side base. The helium ions generate acceptor-type states that lower the effective n doping.

6. 发明授权

US08653556B2 Vertical semiconductor device 有权
标题翻译：垂直半导体器件
公开(公告)号：US08653556B2
公开(公告)日：2014-02-18
申请号：US12437375
申请日：2009-05-07
申请人： Franz Josef Niedernostheide , Hans-Joachim Schulze
发明人： Franz Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/739
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/7395 , H01L29/861
摘要： A vertical semiconductor device includes a semiconductor body, and first and second contacts on opposite sides of the semiconductor body. A plurality of regions are formed in the semiconductor body including, in a direction from the first contact to the second contact, a first region of a first conductivity type, a second region of a second conductivity type; and a third region of the first conductivity type. The third region is electrically connected to the second contact. A semiconductor zone of the second conductivity type and increased doping density is arranged in the second region. The semiconductor zone separates a first part of the second region from a second part of the second region. The semiconductor zone has a maximum doping density exceeding about 1016 cm−3 and a thickness along the direction from the first contact to the second contact of less than about 3 μm.
摘要翻译：垂直半导体器件包括半导体本体，以及在半导体本体的相对侧上的第一和第二触点。多个区域形成在半导体本体中，包括从第一接触到第二接触的方向，具有第一导电类型的第一区域和第二导电类型的第二区域; 和第一导电类型的第三区域。第三区域电连接到第二触点。第二导电类型的半导体区域和掺杂浓度的增加被布置在第二区域中。半导体区域将第二区域的第一部分与第二区域的第二部分分开。半导体区具有超过约1016cm-3的最大掺杂密度和沿着从第一接触到第二接触的方向的厚度小于约3μm。

7. 发明授权

US07649244B2 Vertical semiconductor device having semiconductor zones for improved operability under dynamic processes 有权
标题翻译：具有用于在动态过程下提高可操作性的半导体区域的垂直半导体器件
公开(公告)号：US07649244B2
公开(公告)日：2010-01-19
申请号：US11546010
申请日：2006-10-11
申请人： Franz Josef Niedernostheide , Hans-Joachim Schulze
发明人： Franz Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/74
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/7395 , H01L29/861
摘要： A vertical semiconductor device comprises a semiconductor body, a first contact and a second contact, wherein a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of a second conductivity type are formed in the semiconductor body in a direction from the first contact to the second contact, wherein a basic doping density of the second semiconductor region is smaller than a doping density of the third semiconductor region, and wherein in the second semiconductor region a semiconductor zone of the second conductivity type is arranged in which the doping density is increased relative to the basic doping density of the second semiconductor region.
摘要翻译：一种垂直半导体器件包括半导体本体，第一触点和第二触点，其中形成第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和第二导电类型的第三半导体区域所述半导体本体在从所述第一接触到所述第二接触的方向上，其中所述第二半导体区域的基本掺杂密度小于所述第三半导体区域的掺杂密度，并且其中在所述第二半导体区域中，所述第二半导体区域的半导体区域布置了导电类型，其中掺杂密度相对于第二半导体区域的基本掺杂密度增加。

8. 发明申请

US20120112242A1 Semiconductor body with strained region 有权
标题翻译：具有应变区的半导体体
公开(公告)号：US20120112242A1
公开(公告)日：2012-05-10
申请号：US13237097
申请日：2011-09-20
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Reinhart Job
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Reinhart Job
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/045 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/3003 , H01L29/267 , H01L29/7842
摘要： A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.
摘要翻译：由半导体材料构成的半导体本体包括沿基准方向具有第一晶格常数的半导体材料的第一单晶区域，沿着沿着基准方向具有第一晶格常数的第一晶格常数不同于第一晶格常数参考方向，以及在第一区域和第二区域之间的第三应变单晶区域。

9. 发明授权

US08035195B2 Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：US08035195B2
公开(公告)日：2011-10-11
申请号：US12126751
申请日：2008-05-23
申请人： Franz Josef Niedernostheide , Manfred Pfaffenlehner , Hans-Joachim Schulze
发明人： Franz Josef Niedernostheide , Manfred Pfaffenlehner , Hans-Joachim Schulze
IPC分类号： H01L29/866
CPC分类号： H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/868
摘要： A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.
摘要翻译：半导体元件包括具有第一掺杂密度，金属化以及位于半导体层和金属化之间的接触区域的半导体层。接触区域包括至少一个具有高于第一掺杂浓度的第二掺杂密度的第一半导体区域和半导体层中的至少一个第二半导体区域。与半导体层和提供或将要提供的金属化之间的直接接触相比，第二半导体区域与金属化接触并且提供比金属化更低的欧姆电阻。

10. 发明申请

US20080290466A1 Semiconductor Element 有权
标题翻译：半导体元件
公开(公告)号：US20080290466A1
公开(公告)日：2008-11-27
申请号：US12126751
申请日：2008-05-23
申请人： Franz Josef Niedernostheide , Manfred Pfaffenlehner , Hans-Joachim Schulze
发明人： Franz Josef Niedernostheide , Manfred Pfaffenlehner , Hans-Joachim Schulze
IPC分类号： H01L29/866 , H01L21/329
CPC分类号： H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/868
摘要： A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.
摘要翻译：半导体元件包括具有第一掺杂密度，金属化以及位于半导体层和金属化之间的接触区域的半导体层。接触区域包括至少一个具有高于第一掺杂浓度的第二掺杂密度的第一半导体区域和半导体层中的至少一个第二半导体区域。与半导体层和提供或将要提供的金属化之间的直接接触相比，第二半导体区域与金属化接触并且提供比金属化更低的欧姆电阻。

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