专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07248756B2 Apparatus comprising electronic and/or optoelectronic circuitry and method for realizing said circuitry 失效
标题翻译：包括用于实现所述电路的电子和/或光电子电路和方法的装置
公开(公告)号：US07248756B2
公开(公告)日：2007-07-24
申请号：US10984923
申请日：2004-11-10
申请人： Thomas Ebbesen , Per-Erik Nordal
发明人： Thomas Ebbesen , Per-Erik Nordal
IPC分类号： G02B6/12 , G02B6/00 , C07C5/42 , G09G3/28
CPC分类号： D04B1/16 , D02G3/441 , D03D1/0088 , D03D9/00 , D03D15/00 , D03D15/0011 , D03D15/0027 , D03D15/0083 , D03D15/0088 , D03D15/02 , D03D27/00 , D04B21/16 , D10B2101/06 , D10B2101/20 , D10B2401/16 , D10B2401/20 , D10B2403/02431 , G02B6/3608 , G02B6/3628 , G02B6/43 , H01L25/065 , H01L27/32 , H01L2924/0002 , H01L2924/3011 , H05K1/038 , H05K1/189 , H05K2201/0281 , H01L2924/00
摘要： An apparatus/method for producing fabric-like electronic circuit patterns created by methodically joining electronic elements using textile fabrication-like methods in a predetermined arrangement.
摘要翻译：一种用于制造通过以预定布置方式使用纺织品制造方法以方法连接电子元件而制造的类似织物的电子电路图案的装置/方法。

2. 发明授权

US06856715B1 Apparatus comprising electronic and/or optoelectronic circuitry and method for realizing said circuitry 失效
公开(公告)号：US06856715B1
公开(公告)日：2005-02-15
申请号：US09720084
申请日：2000-04-27
申请人： Thomas Ebbesen , Per-Erik Nordal
发明人： Thomas Ebbesen , Per-Erik Nordal
IPC分类号： D02G3/44 , G02B6/36 , G02B6/43 , H01L25/065 , H01L27/32 , H05K1/00 , G02B6/12
CPC分类号： D04B1/16 , D02G3/441 , D03D1/0088 , D03D9/00 , D03D15/00 , D03D15/0011 , D03D15/0027 , D03D15/0083 , D03D15/0088 , D03D15/02 , D03D27/00 , D04B21/16 , D10B2101/06 , D10B2101/20 , D10B2401/16 , D10B2401/20 , D10B2403/02431 , G02B6/3608 , G02B6/3628 , G02B6/43 , H01L25/065 , H01L27/32 , H01L2924/0002 , H01L2924/3011 , H05K1/038 , H05K1/189 , H05K2201/0281 , H01L2924/00
摘要： An apparatus/method for producing fabric-like electronic circuit patterns created by methodically joining electronic elements using textile fabrication-like methods in a predetermined arrangement.

3. 发明申请

US20050081913A1 Apparatus comprising electronic and/or optoelectronic circuitry and method for realizing said circuitry 失效
标题翻译：包括用于实现所述电路的电子和/或光电子电路和方法的装置
公开(公告)号：US20050081913A1
公开(公告)日：2005-04-21
申请号：US10984923
申请日：2004-11-10
申请人： Thomas Ebbesen , Per-Erik Nordal
发明人： Thomas Ebbesen , Per-Erik Nordal
IPC分类号： D02G3/44 , G02B6/36 , G02B6/43 , H01L25/065 , H01L27/32 , H05K1/00 , H01L31/00
CPC分类号： D04B1/16 , D02G3/441 , D03D1/0088 , D03D9/00 , D03D15/00 , D03D15/0011 , D03D15/0027 , D03D15/0083 , D03D15/0088 , D03D15/02 , D03D27/00 , D04B21/16 , D10B2101/06 , D10B2101/20 , D10B2401/16 , D10B2401/20 , D10B2403/02431 , G02B6/3608 , G02B6/3628 , G02B6/43 , H01L25/065 , H01L27/32 , H01L2924/0002 , H01L2924/3011 , H05K1/038 , H05K1/189 , H05K2201/0281 , H01L2924/00
摘要： An apparatus/method for producing fabric-like electronic circuit patterns created by methodically joining electronic elements using textile fabrication-like methods in a predetermined arrangement.
摘要翻译：一种用于制造通过以预定布置方式使用纺织品制造方法以方法连接电子元件而制造的类似织物的电子电路图案的装置/方法。

4. 发明申请

US20080151609A1 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US20080151609A1
公开(公告)日：2008-06-26
申请号：US12010067
申请日：2008-01-18
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.
摘要翻译：在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

5. 发明申请

US20070103960A1 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US20070103960A1
公开(公告)日：2007-05-10
申请号：US10579968
申请日：2004-11-24
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
摘要翻译：在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用，到电压脉冲协议。在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

6. 发明申请

US20050151176A1 Memory cell 失效
标题翻译：存储单元
公开(公告)号：US20050151176A1
公开(公告)日：2005-07-14
申请号：US10504860
申请日：2003-02-11
申请人： Hans Gudesen , Per-Erik Nordal
发明人： Hans Gudesen , Per-Erik Nordal
IPC分类号： H01L27/105 , G11C11/22 , H01L21/8246 , H01L27/115 , H01L29/861 , H01L31/119
CPC分类号： H01L29/8615 , B82Y10/00 , G11C11/22 , H01L27/11502
摘要： In a ferroelectret or electret memory cell a polymeric memory material is a blend of two or more ploymeric materials, the polymeric material being provided contacting first and second electrodes. Each electrode is a composite multilayer comprising a first highly conducting layer and a conducting polymer layer, the latter forming a contact between the former and the memory material.
摘要翻译：在铁电或驻极体记忆单元中，聚合物记忆材料是两种或更多种聚合物材料的混合物，所述聚合材料与第一和第二电极接触。每个电极是包含第一高导电层和导电聚合物层的复合多层，后者形成前者和记忆材料之间的接触。

7. 发明申请

US20050073869A1 Method for operating a ferroelectric of electret memory device, and a device of this kind 有权
公开(公告)号：US20050073869A1
公开(公告)日：2005-04-07
申请号：US10659428
申请日：2003-09-11
申请人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
发明人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.

8. 发明授权

US06765617B1 Optoelectronic camera and method for image formatting in the same 失效
标题翻译：光电相机和图像格式化方法相同
公开(公告)号：US06765617B1
公开(公告)日：2004-07-20
申请号：US09341311
申请日：1999-07-08
申请人： Reidar E. Tangen , Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Reidar E. Tangen , Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H04N5225
CPC分类号： H04N9/045 , H01L27/14627 , H04N5/3415 , H04N2209/046
摘要： An optoelectronic camera comprises an objective system formed by a number of optical active structures (L), particularly refractive structures in the form of microlenses or lenslets provided in an array. A detector device (D) is assigned to the lens array and comprises detectors (Dn) formed by sensor elements (E) which define pixels in the optical image. Each detector (Dn) defines a sample of the optical image and optimally all samples are used to generate a digital image. The optoelectronic camera may be realized as a color image camera, particularly for recording images in an RGB system. In a method for digital electronic formatting of an image recorded with the optoelectronic camera, zoom and pan functions are implemented in the camera.
摘要翻译：光电照相机包括由许多光学有源结构（L）形成的物镜系统，特别是以阵列形式提供的微透镜或小透镜形式的折射结构。检测器装置（D）被分配给透镜阵列，并且包括由限定光学图像中的像素的传感器元件（E）形成的检测器（Dn）。每个检测器（Dn）定义光学图像的样本，并且最佳地使用所有样本来产生数字图像。光电相机可以被实现为彩色图像相机，特别是用于在RGB系统中记录图像。在用光电相机记录的图像的数字电子格式化方法中，在相机中实现变焦和平移功能。

9. 发明授权

US06380597B1 Read-only memory and read-only memory device 失效
标题翻译：只读存储器和只读存储器件
公开(公告)号：US06380597B1
公开(公告)日：2002-04-30
申请号：US09297521
申请日：1999-09-13
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： G11C1706
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C11/5692 , G11C13/0016 , H01L27/112
摘要： A read-only memory is made electrically addressable over a passive conductor matrix, wherein the volume between intersection of two conductors (2; 4) in the matrix defines a memory cell (5). Data are stored as impedance values in the memory cells. The memory cells (5) comprise either an isolating material (6) which provides high impedance or one or more inorganic or organic semiconductors (9), preferably with an anisotropic conducting property. The semiconductor material (9) forms a diode junction at the interface to a metallic conductor (2; 4) in the matrix. By suitable arrangement of respectively the isolating material (6) and semiconductor material (9) in the memory cells these may be given a determined impedance value which may be read electrically and corresponds to logical values in a binary or multi-valued code. One or more read-only memories (ROM) may be provided on a semiconductor substrate (1) which also comprises driver and control circuits (13), to accomplish a read-only memory device. The device may be realized either planar or also volumetrically by stacking several read-only memories (ROM) in horizontal layers (15) and connecting them with the substrate (1) via addressing buses.
摘要翻译：只读存储器在无源导体矩阵上可电寻址，其中矩阵中两个导体（2; 4）的相交之间的体积限定了存储单元（5）。数据作为阻抗值存储在存储单元中。存储单元（5）包括提供高阻抗的隔离材料（6）或一个或多个无机或有机半导体（9），优选具有各向异性导电性能。半导体材料（9）在与基体中的金属导体（2; 4）的界面处形成二极管结。通过分别将存储单元中的隔离材料（6）和半导体材料（9）适当地布置，这些可以被给予确定的阻抗值，其可以被电读取并对应于二值或多值代码中的逻辑值。可以在也包括驱动器和控制电路（13）的半导体衬底（1）上提供一个或多个只读存储器（ROM），以实现只读存储器件。该装置可以通过在水平层（15）中堆叠几个只读存储器（ROM）并且经由寻址总线将其与衬底（1）连接来实现平面或体积式地实现。

10. 发明授权

US07352612B2 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US07352612B2
公开(公告)日：2008-04-01
申请号：US10579968
申请日：2004-11-24
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
摘要翻译：在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用，到电压脉冲协议。在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式