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1. 发明授权

US09418937B2 Integrated circuit and method of forming an integrated circuit 有权
标题翻译：集成电路和形成集成电路的方法
公开(公告)号：US09418937B2
公开(公告)日：2016-08-16
申请号：US13315642
申请日：2011-12-09
申请人： Thomas Detzel , Johann Gross , Robert Illing , Maximilian Krug , Sven Gustav Lanzerstorfer , Michael Nelhiebel , Werner Robl , Michael Rogalli , Stefan Woehlert
发明人： Thomas Detzel , Johann Gross , Robert Illing , Maximilian Krug , Sven Gustav Lanzerstorfer , Michael Nelhiebel , Werner Robl , Michael Rogalli , Stefan Woehlert
IPC分类号： H01L23/52 , H01L23/532 , H01L21/288
CPC分类号： H01L23/3735 , H01L21/2885 , H01L21/4882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 μm and a ratio of average grain size to thickness of less than 0.7.
摘要翻译：集成电路包括在基底元件上的基底元件和铜元件，铜元素的厚度至少为5μm，平均晶粒尺寸与厚度之比小于0.7。

2. 发明申请

US20130147047A1 Integrated Circuit and Method of Forming an Integrated Circuit 有权
标题翻译：集成电路和形成集成电路的方法
公开(公告)号：US20130147047A1
公开(公告)日：2013-06-13
申请号：US13315642
申请日：2011-12-09
申请人： Thomas Detzel , Johann Gross , Robert Illing , Maximilian Krug , Sven Gustav Lanzerstorfer , Michael Nelhiebel , Werner Robl , Michael Rogalli , Stefan Woehlert
发明人： Thomas Detzel , Johann Gross , Robert Illing , Maximilian Krug , Sven Gustav Lanzerstorfer , Michael Nelhiebel , Werner Robl , Michael Rogalli , Stefan Woehlert
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L23/3735 , H01L21/2885 , H01L21/4882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 μm and a ratio of average grain size to thickness of less than 0.7.
摘要翻译：集成电路包括在基底元件上的基底元件和铜元件，铜元件具有至少5μm的厚度，并且平均晶粒尺寸与厚度之比小于0.7。

3. 发明授权

US06380076B2 Dielectric filling of electrical wiring planes 有权
标题翻译：电气接线面的电介质填充
公开(公告)号：US06380076B2
公开(公告)日：2002-04-30
申请号：US09741308
申请日：2000-12-18
申请人： Markus Kirchhoff , Michael Rogalli , Stephan Wege
发明人： Markus Kirchhoff , Michael Rogalli , Stephan Wege
IPC分类号： H01L214763
CPC分类号： H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a dielectric filling for electrical wiring planes of an integrated circuit. The electrical wiring of the integrated circuit comprises a base body on which track and passivation planes can already be disposed; a conductive layer which is disposed on the base body and is patterned in such a manner that it exhibits a first conductor track, a second conductor track and a trench between the first conductor track and the second conductor track; at least one dielectric layer is disposed on the conductive layer and at least partially fills the trench, the preferred material of the dielectric layer being the polymer material polybenzoxazole.
摘要翻译：本发明涉及一种用于集成电路的电接线平面的电介质填充物。集成电路的电气布线包括基体，轨道和钝化平面已经可以放置在基体上; 导电层，其设置在基体上并且被图案化，使得其在第一导体轨道和第二导体轨道之间呈现第一导体轨道，第二导体轨道和沟槽; 至少一个电介质层设置在导电层上并且至少部分地填充沟槽，电介质层的优选材料是聚苯乙烯聚合物材料。

4. 发明授权

US5227219A Surface wave components with an acoustically matched damping compound 失效
标题翻译：表面波组件与声音匹配阻尼化合物
公开(公告)号：US5227219A
公开(公告)日：1993-07-13
申请号：US402355
申请日：1989-09-05
申请人： Heiner Bayer , Michael Rogalli , Frank Dittrich , Hans Stelzl
发明人： Heiner Bayer , Michael Rogalli , Frank Dittrich , Hans Stelzl
IPC分类号： C08G59/56 , C08G59/58 , C08L63/00 , G10K11/16 , G10K11/36 , H03H3/08 , H03H9/25
CPC分类号： G10K11/002 , G10K11/36 , Y10S428/901 , Y10T428/24479 , Y10T428/24802 , Y10T428/31511
摘要： An acoustically matched reaction resin compound for damping coating of surface wave components is disclosed that contains one or more epoxy resins, one or more dicarboxylic acids or polycarboxylic acids or, respectively, acidic esters of dicarboxylic acids or polycarboxylic acids, an aliphatic or hetero-aromatic amine in a proportion sufficient to catalyze the cross linking of the reaction resin compound, and a solvent. The number of amine hydrogen equivalents and acid equivalents together is less than the number of epoxy equivalents and the uniformly mixed reaction resin compound can be set to a predetermined viscosity and thixotropy required for the application. For example, the reaction resin compound can be applied onto the wafer containing the surface wave components in a silk screening process. Sharp contours can be produced that survive the curing process in an unmodified state. The damping properties of cured reaction resin structures are excellent; corrosion induced by the resin is noticeably reduced.
摘要翻译：公开了一种声学匹配的用于阻止表面波分量涂层的反应树脂化合物，其包含一种或多种环氧树脂，一种或多种二羧酸或多元羧酸，或分别为二羧酸或多元羧酸的酸性酯，脂族或杂芳族胺的比例足以催化反应树脂化合物和溶剂的交联。胺氢等价物的数量和酸当量一起小于环氧当量的数量，并且可以将均匀混合的反应树脂化合物设定为施加所需的预定粘度和触变性。例如，反应树脂化合物可以在丝印过程中施加到含有表面波成分的晶片上。可以产生在未修饰状态下经受固化过程的锋利轮廓。固化反应树脂结构的阻尼性能优异; 由树脂引起的腐蚀明显降低。

5. 发明授权

US07169716B2 Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask 有权
标题翻译：用于在半导体衬底或掩模上提供涂层的感光漆
公开(公告)号：US07169716B2
公开(公告)日：2007-01-30
申请号：US11000342
申请日：2004-11-29
申请人： Michael Rogalli , Lars Völkel
发明人： Michael Rogalli , Lars Völkel
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： G03F7/0392 , G03F7/0395
摘要： A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are substantially transparent to incident light at 193 nm, and a second base polymer comprises aromatic parent structures (B) which substantially absorb incident light at 193 nm and are substantially transparent to incident light at 248 nm. If such a resist (100) is applied in a coat thickness of from 50 to 400 nm to a substrate and the proportion of the second base polymer having the aromatic parent structure is between 1 and 25 mol %, a relatively high structure contrast, better stability to etching and a reduction of defects are advantageously achieved in an exposure at a wavelength of 193 nm. Exposure over the entire depth range of the resist (100) is ensured thereby.
摘要翻译：用于在半导体衬底或掩模上涂覆的光敏抗蚀剂（100）包括光酸产生剂（D），溶剂（E）和至少两种不同的基础聚合物，其中第一种基础聚合物包含脂环族母体结构（A）其基本上吸收在248nm处的入射光并且对193nm的入射光基本上是透明的，并且第二基础聚合物包括基本上吸收193nm的入射光并对248nm的入射光基本透明的芳族母体结构（B）。如果将这样的抗蚀剂（100）以50-400nm的涂层厚度施加到基材上，并且具有芳族母体结构的第二基础聚合物的比例在1至25摩尔％之间，则相对较高的结构对比度在193nm的波长的曝光中有利地实现了蚀刻的稳定性和缺陷的减少。从而确保抗蚀剂（100）的整个深度范围的曝光。

6. 发明授权

US5780103A Method for forming of a silicon oxide layer on a topography 失效
标题翻译：在地形上形成氧化硅层的方法
公开(公告)号：US5780103A
公开(公告)日：1998-07-14
申请号：US771153
申请日：1996-12-20
申请人： Dirk Toebben , Doerthe Groteloh , Oswald Spindler , Michael Rogalli
发明人： Dirk Toebben , Doerthe Groteloh , Oswald Spindler , Michael Rogalli
IPC分类号： B32B9/00 , H01L21/31 , H01L21/316 , H01L21/768 , B05D3/02
CPC分类号： H01L21/316
摘要： A method for depositing an SiO.sub.2 layer, which acts as an inter-metal dielectric (IMD), is provided. The method includes the steps of applying to the topography an organodisiloxane which is dissolved in an organic solvent, the organodisiloxane is then polymerized, and the polymer formed is decomposed, the polymer changing in the process to become an SiO.sub.2 -rich layer. The method of the present invention results in SiO.sub.2 layers which achieve an excellent local and global degree of planarization and have a distinctly lower dielectric constant than SiO.sub.2 layers prepared using conventional methods.
摘要翻译：提供了用作沉积作为金属间电介质（IMD）的SiO 2层的方法。该方法包括以下步骤：将溶解在有机溶剂中的有机二硅氧烷应用于形貌，然后使有机二硅氧烷聚合，形成的聚合物分解，聚合物在此过程中发生变化，成为富含SiO 2的层。本发明的方法产生SiO 2层，其实现了优异的局部和全局平坦度，并且具有明显低于使用常规方法制备的SiO 2层的介电常数。

7. 发明申请

US20080006098A1 Sensor device and a method for its manufacturing 审中-公开
标题翻译：传感器装置及其制造方法
公开(公告)号：US20080006098A1
公开(公告)日：2008-01-10
申请号：US11482518
申请日：2006-07-07
申请人： Michael Rogalli
发明人： Michael Rogalli
IPC分类号： G01P15/00 , G01L1/00 , H01L21/00
CPC分类号： B81B3/0086 , B81B2201/0235 , B81B2201/0264 , B81B2207/07 , G01L9/0042 , G01P15/08 , G01P15/0802
摘要： A sensor device with a semiconductor substrate with at least one deformable region with a sensing element thereon that generates an output signal related to a force applied to the deformable region is shown. A wiring formed over the deformable region and deformable therewith has a deformation characteristic selected to reduce an output error characteristic of the sensor output signal. A method for manufacturing the sensor device is disclosed.
摘要翻译：一种具有半导体衬底的传感器装置，其具有至少一个具有感测元件的可变形区域，其上产生与施加到可变形区域的力有关的输出信号。形成在可变形区域上并与其变形的布线具有选择以减小传感器输出信号的输出误差特性的变形特性。公开了一种用于制造传感器装置的方法。

8. 发明授权

US06790737B2 Method for fabricating thin metal layers from the liquid phase 失效
标题翻译：从液相制造薄金属层的方法
公开(公告)号：US06790737B2
公开(公告)日：2004-09-14
申请号：US10390872
申请日：2003-03-17
申请人： Manfred Schneegans , Wolfgang Jaeger , Michael Rogalli
发明人： Manfred Schneegans , Wolfgang Jaeger , Michael Rogalli
IPC分类号： H01L2120
CPC分类号： H01L27/1087 , H01L21/288
摘要： A method for producing metal layers on surfaces of semiconductor substrates includes the step of providing a semiconductor substrate having a surface. In this case, a precursor compound of a metal to be deposited is condensed out on the semiconductor surface and subsequently decomposed thermally. The method makes it possible to fill trenches with a high aspect ratio, it being possible to effectively suppress the formation of voids.
摘要翻译：在半导体衬底的表面上制造金属层的方法包括提供具有表面的半导体衬底的步骤。在这种情况下，要沉积的金属的前体化合物在半导体表面上冷凝，随后热分解。该方法使得可以以高纵横比填充沟槽，可以有效地抑制空隙的形成。

9. 发明授权

US5468786A Radiation-curable reaction resin system 失效
标题翻译：可辐射固化反应树脂体系
公开(公告)号：US5468786A
公开(公告)日：1995-11-21
申请号：US191141
申请日：1994-02-02
申请人： Heiner Bayer , Barbara Lehner , Michael Rogalli
发明人： Heiner Bayer , Barbara Lehner , Michael Rogalli
IPC分类号： C08F2/46 , C08F2/50 , C08F2/54 , C08F283/00 , C08G59/00 , C08G59/18 , C08L63/00 , C08L101/00
CPC分类号： C08F283/00
摘要： A radiation-curable reaction resin system, comprising a homogeneous solution of a thermoplastic and a reaction resin, whereby the proportion of the thermoplastic in the solution is approximately 3 to about 50% by weight. The reaction resin system has a stable shelf life. Further, the reaction resin system can be cured by radiation to form a shaped material, comprising a continuous and a discontinuous phase and which exhibits thermoplastic-like behavior.
摘要翻译：一种可辐射固化的反应树脂体系，其包含热塑性树脂和反应树脂的均匀溶液，由此该溶液中热塑性塑料的比例为约3至约50重量％。反应树脂体系具有稳定的保质期。此外，反应树脂体系可以通过辐射固化以形成成型材料，其包含连续的和不连续的相，并表现出类似热塑性的行为。

10. 发明授权

US06958256B2 Process for the back-surface grinding of wafers 失效
标题翻译：晶圆背面研磨工艺
公开(公告)号：US06958256B2
公开(公告)日：2005-10-25
申请号：US10696866
申请日：2003-10-30
申请人： Michael Rogalli , Manfred Schneegans
发明人： Michael Rogalli , Manfred Schneegans
IPC分类号： C09J7/02 , B24B7/22 , B24B41/06 , C09J11/06 , C09J133/00 , C09J163/00 , C09J167/00 , C09J171/00 , C09J175/04 , H01L20060101 , H01L21/00 , H01L21/30 , H01L21/302 , H01L21/304 , H01L21/461 , H01L21/58 , H01L21/68 , H01L21/78
CPC分类号： B24B7/228 , B24B41/06 , H01L21/304 , H01L21/6836 , H01L2221/68327
摘要： The present invention relates to a process for the back-surface grinding of wafers using films which have a support layer, which is known per se, and an adhesion layer which can be polymerized in steps, and to films which include such an adhesion layer which can be polymerized in steps, and to the use thereof.
摘要翻译：本发明涉及一种使用薄膜进行背面研磨的方法，所述薄膜具有本身已知的支撑层，以及可以分阶段聚合的粘合层，以及包括这种粘合层可以分阶段聚合，并使用它们。

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