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1. 发明申请

US20090275963A1 High-Strength Suture With Absorbable Components 审中-公开
标题翻译：高强度缝合可吸收组分
公开(公告)号：US20090275963A1
公开(公告)日：2009-11-05
申请号：US12431853
申请日：2009-04-29
申请人： Thomas C. May , Joseph Hotter , Jon Reinprecht , Richard Hammond
发明人： Thomas C. May , Joseph Hotter , Jon Reinprecht , Richard Hammond
IPC分类号： A61B17/04 , A61L17/06
CPC分类号： A61B17/06166 , A61B90/92 , A61B2017/00004 , A61L17/10 , A61L17/12 , C08L23/06
摘要： First and second yarns are interconnected to form surgical devices. The first yarns include a plurality of filaments including one or more filaments made from a high strength material and the second yarns include a plurality of filaments including one or more filaments made from an absorbable material.
摘要翻译：第一和第二纱线相互连接以形成外科装置。第一纱线包括多根长丝，其包括由高强度材料制成的一根或多根细丝，第二纱线包括多根细丝，包括由可吸收材料制成的一根或多根细丝。

2. 发明授权

US08129821B2 Reacted conductive gate electrodes 有权
标题翻译：反应的导电栅电极
公开(公告)号：US08129821B2
公开(公告)日：2012-03-06
申请号：US10944618
申请日：2004-09-17
申请人： Matthew T. Currie , Richard Hammond
发明人： Matthew T. Currie , Richard Hammond
IPC分类号： H01L31/117
CPC分类号： H01L29/7848 , H01L21/28052 , H01L21/2807 , H01L21/28255 , H01L21/28518 , H01L21/324 , H01L29/0847 , H01L29/1054 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/49 , H01L29/665 , H01L29/6659 , H01L29/7842
摘要： A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.
摘要翻译：半导体器件和制造半导体器件的方法包括包括第一材料和第二材料的半导体层。第一和第二种材料可以是硅和锗。器件的触点具有靠近半导体层的部分和远离半导体层的部分。远侧部分包括第一材料和第二材料。与松弛的半导体层相邻并且邻近接触的远端部分形成的金属层与松弛的半导体层和接触的远端部分同时反应以提供金属接触材料。

3. 发明申请

US20110196206A1 PORT FIXATION WITH VARYING THREAD DIAMETER 审中-公开
标题翻译：端口固定与变化的螺纹直径
公开(公告)号：US20110196206A1
公开(公告)日：2011-08-11
申请号：US12987355
申请日：2011-01-10
申请人： Richard Hammond
发明人： Richard Hammond
IPC分类号： A61B1/32
CPC分类号： A61B17/3421 , A61B2017/3433 , A61B2017/3482 , A61B2017/349
摘要： A surgical portal device for use in an endoscopic procedure includes an elongated body portion dimensioned for insertion through tissue. The body portion includes an outer wall defining a longitudinal axis and having a proximal end, a distal end, and a longitudinal lumen configured to allow a surgical instrument to pass therethrough. A plurality of threaded fixation segments is disposed on an exterior surface of the outer wall of the body portion. The threaded fixation segments are dimensioned and configured to engage tissue surrounding an opening to secure the elongated body at a predefined location within the tissue. The threaded fixation segments include a proximal threaded fixation segment having an average first thread diameter and a distal threaded fixation segment having an average second thread diameter less than the average first thread diameter. In one embodiment, each of the threaded fixation segments have different average thread diameters. The average thread diameters of the threaded fixation segments may gradually increase from a distal-most threaded fixation segment to a proximal-most threaded fixation segment.
摘要翻译：用于内窥镜手术的手术入口装置包括尺寸适于插入通过组织的细长主体部分。主体部分包括限定纵向轴线的外壁，并且具有近端，远端和构造成允许手术器械通过的纵向内腔。多个螺纹固定段设置在主体部分的外壁的外表面上。螺纹固定段的尺寸和构造适于接合围绕开口的组织，以将细长体固定在组织内的预定位置。螺纹固定段包括具有平均第一螺纹直径的近端螺纹固定段和具有小于平均第一螺纹直径的平均第二螺纹直径的远端螺纹固定段。在一个实施例中，每个螺纹固定段具有不同的平均螺纹直径。螺纹固定段的平均螺纹直径可以从最远端螺纹固定段逐渐增加到最近端螺纹固定段。

4. 发明申请

US20110095363A1 Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same 有权
标题翻译：采用具有定义杂质梯度的应变材料层的半导体结构及其制造方法
公开(公告)号：US20110095363A1
公开(公告)日：2011-04-28
申请号：US12982101
申请日：2010-12-30
申请人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
发明人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
IPC分类号： H01L29/78
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
摘要翻译：包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。当杂质存在于应变材料层的某些区域中时，器件性能下降。通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

5. 发明申请

US20110077584A1 ACCESS PORT INCLUDING ROTATABLE SEALS 审中-公开
标题翻译：进出口包括可旋转密封件
公开(公告)号：US20110077584A1
公开(公告)日：2011-03-31
申请号：US12956128
申请日：2010-11-30
申请人： Richard Hammond
发明人： Richard Hammond
IPC分类号： A61B17/34 , A61M13/00
CPC分类号： A61B17/3421 , A61B17/3462
摘要： A surgical access device includes a housing; an access member extending distally from the housing and being dimensioned for positioning within tissue, and defining a longitudinal axis; and a seal assembly disposed within the housing. The seal assembly includes first and second seal components respectively having first and second seal members. Each of the first and second seal members defines a passage for passage of a surgical object in substantial sealed relation therewith. The first and second seal components are capable of relative rotation about the longitudinal axis between a first position, in which passages of the first and second seal members are in substantial alignment, and a second position where the passages of the first and second seal members are offset to inhibit the communication of fluid through the seal assembly.
摘要翻译：外科进入装置包括壳体; 定位构件，其从所述壳体向远侧延伸并且被设计成用于定位在组织内，并限定纵向轴线; 以及设置在所述壳体内的密封组件。密封组件包括分别具有第一和第二密封构件的第一和第二密封构件。第一和第二密封构件中的每一个限定了用于与其处于实质密封关系的手术物体通过的通道。第一密封部件和第二密封部件能够在第一位置和第二位置之间围绕纵向轴线相对旋转，第一位置在第一位置和第二位置之间，第一位置和第二位置，第一和第二密封部件的通道基本对准，偏移以阻止流体通过密封组件的连通。

6. 发明申请

US20100264995A1 RF Circuits Including Transistors Having Strained Material Layers 有权
标题翻译：包括具有应变材料层的晶体管的RF电路
公开(公告)号：US20100264995A1
公开(公告)日：2010-10-21
申请号：US12767671
申请日：2010-04-26
申请人： Glyn Braithwaite , Richard Hammond , Matthew Currie
发明人： Glyn Braithwaite , Richard Hammond , Matthew Currie
IPC分类号： H03B5/12 , H03F3/16
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译：用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。

7. 发明授权

US07776697B2 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same 有权
公开(公告)号：US07776697B2
公开(公告)日：2010-08-17
申请号：US11847721
申请日：2007-08-30
申请人： Matthew T. Currie , Anthony J. Lochtefeld , Richard Hammond , Eugene A. Fitzgerald
发明人： Matthew T. Currie , Anthony J. Lochtefeld , Richard Hammond , Eugene A. Fitzgerald
IPC分类号： H01L21/00
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

8. 发明授权

US07709828B2 RF circuits including transistors having strained material layers 有权
标题翻译： RF电路包括具有应变材料层的晶体管
公开(公告)号：US07709828B2
公开(公告)日：2010-05-04
申请号：US11032413
申请日：2005-01-10
申请人： Glyn Braithwaite , Richard Hammond , Matthew Currie
发明人： Glyn Braithwaite , Richard Hammond , Matthew Currie
IPC分类号： H01L31/00
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译：用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。

9. 发明申请

US20050212061A1 Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes 有权
标题翻译：通过使用分裂面形成绝缘体上半导体器件结构的方法
公开(公告)号：US20050212061A1
公开(公告)日：2005-09-29
申请号：US11127508
申请日：2005-05-12
申请人： Thomas Langdo , Matthew Currie , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Thomas Langdo , Matthew Currie , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L21/20 , H01L21/331 , H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译：应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

10. 发明申请

US20050202640A1 Gate technology for strained surface channel and strained buried channel MOSFET devices 有权
标题翻译：用于应变表面通道和应变埋入通道MOSFET器件的栅极技术
公开(公告)号：US20050202640A1
公开(公告)日：2005-09-15
申请号：US11013838
申请日：2004-12-16
申请人： Eugene Fitzgerald , Richard Hammond , Matthew Currie
发明人： Eugene Fitzgerald , Richard Hammond , Matthew Currie
IPC分类号： H01L21/20 , H01L21/28 , H01L21/336 , H01L29/10 , H01L29/78
CPC分类号： H01L29/66477 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/02664 , H01L21/28194 , H01L21/28211 , H01L21/28238 , H01L29/1054 , H01L29/78 , H01L29/7838 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device including providing a semiconductor heterostructure, the heterostructure having a relaxed Si1-xGex layer on a substrate, a strained channel layer on the relaxed Si1-xGex layer, and a Si1-yGey layer; removing the Si1-yGey layer; and providing a dielectric layer. The dielectric layer includes a gate dielectric of a MISFET. In alternative embodiments, the heterostructure includes a SiGe spacer layer and a Si layer.
摘要翻译：一种制造半导体器件的方法，包括提供半导体异质结构，所述异质结构在衬底上具有松弛的Si 1-x Ge 2 x层，在弛豫时产生应变沟道层 Si 1-x Ge Ge层，以及Si 1-y Ge Ge层; 除去Si 1-y Y y Y y层; 并提供介电层。电介质层包括MISFET的栅极电介质。在替代实施例中，异质结构包括SiGe间隔层和Si层。

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