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1. 发明授权

US4642558A Miniature electromagnetic field measurement probe 失效
标题翻译：微型电磁场测量探头
公开(公告)号：US4642558A
公开(公告)日：1987-02-10
申请号：US481389
申请日：1983-04-01
申请人： Theodore E. Batchman , George E. Gimpelson
发明人： Theodore E. Batchman , George E. Gimpelson
IPC分类号： G01R29/08 , G01R31/00
CPC分类号： G01R29/08
摘要： An electromagnetic field measurement probe for measuring an electromagnetic field and providing a corresponding measurement signal to a measurement output. The electromagnetic field measurement probe comprises an antenna arrangement for detecting the electromagnetic field and producing a corresponding electrical output, and an output connector arrangement connected to the antenna arrangement for providing the corresponding electrical output to the measurement output of the probe. The output connector arrangement includes a lead structure comprising a dielectric having opposing faces on opposite sides thereof, and high resistivity lead material disposed on the opposing faces. The probe further comprises a diode rectifier disposed between and connecting two antenna elements forming the antenna arrangement, as well as two output connector bonding pads, each being electrically connected to the high resistivity material disposed on respective ones of the two opposing faces of the dielectric.
摘要翻译：一种电磁场测量探头，用于测量电磁场，并向测量输出提供相应的测量信号。电磁场测量探头包括用于检测电磁场并产生相应电气输出的天线装置，以及连接到天线装置的输出连接器装置，用于向探针的测量输出提供相应的电输出。输出连接器装置包括引线结构，该引线结构包括在其相对侧上具有相对面的电介质和设置在相对面上的高电阻率引线材料。探针还包括设置在形成天线装置的两个天线元件之间并连接两个天线元件的二极管整流器，以及两个输出连接器接合焊盘，每个输出连接器焊盘电连接到设置在电介质的两个相对面上的相应面上的高电阻率材料。

2. 发明授权

US5006421A Metalization systems for heater/sensor elements 失效
标题翻译：加热器/传感器元件的金属化系统
公开(公告)号：US5006421A
公开(公告)日：1991-04-09
申请号：US257074
申请日：1988-09-30
申请人： Kuang L. Yang , David Gutierrez , George E. Gimpelson
发明人： Kuang L. Yang , David Gutierrez , George E. Gimpelson
IPC分类号： G01K7/18 , G01F1/684 , G01K7/22 , G01P5/10 , H01C7/00 , H01C7/02 , H01L29/84
CPC分类号： H01C7/021 , G01F1/6845 , G01P5/10 , H01C7/022 , Y10T428/12493 , Y10T428/12674 , Y10T428/12806 , Y10T428/12812 , Y10T428/12833 , Y10T428/12868
摘要： Device comprising a substrate and a metallized sensor/heater element having a temperature coefficient of resistance of at least 2000 parts per million. Methods of fabricating the devices are also disclosed.
摘要翻译：该装置包括基片和金属化传感器/加热器元件，其温度系数电阻为至少2000ppm。还公开了制造器件的方法。

3. 发明授权

US4652812A One-sided ion migration velocity measurement and electromigration failure warning device 失效
标题翻译：单侧离子迁移速度测量和电迁移故障报警装置
公开(公告)号：US4652812A
公开(公告)日：1987-03-24
申请号：US675221
申请日：1984-11-27
申请人： George E. Gimpelson , Elias W. George
发明人： George E. Gimpelson , Elias W. George
IPC分类号： G01R31/26
CPC分类号： G01R31/26
摘要： Cathode migration is reduced by increasing the width of the cathode at its leading edge compared to the width of the anode at its leading edge. Electromigration to a specific degree may be measured by placing an additional conductor connected to the anode portion of the base conductor and separated from the anode by the base conductor. A rapid change in resistance can be sensed as the anode electrically migrates past the additional conductor.
摘要翻译：与其前缘处的阳极的宽度相比，通过增加阴极在其前缘处的宽度来减小阴极迁移。可以通过放置连接到基底导体的阳极部分的另外的导体并通过基底导体与阳极分离来测量到特定程度的电迁移。当阳极电迁移超过附加导体时，可以感测到电阻的快速变化。

4. 发明授权

US4705596A Simultaneous plasma sculpturing and dual tapered aperture etch 失效
标题翻译：同时等离子体雕刻和双锥形孔蚀刻
公开(公告)号：US4705596A
公开(公告)日：1987-11-10
申请号：US723238
申请日：1985-04-15
申请人： George E. Gimpelson , Cheryl L. Holbrook , Frederick N. Hause
发明人： George E. Gimpelson , Cheryl L. Holbrook , Frederick N. Hause
IPC分类号： H01L21/3105 , H01L21/311 , H01L21/768 , H01L21/308 , H01L21/32
CPC分类号： H01L21/76804 , H01L21/31055 , H01L21/31144 , Y10S148/161
摘要： A method of planarizing a semiconductor layer by use of a plasma etch step which also etches vias having a tapered profile is made possible by selecting a conformal layer preferably of a different material than the material through which the via is to be provided such that a plasma etch will establish differing etch rates in the conformal and underlying layers.
摘要翻译：通过使用也蚀刻具有锥形轮廓的通孔的等离子体蚀刻步骤来平坦化半导体层的方法可以通过选择优选地与通过其提供通孔的材料不同的材料的共形层来实现，使得等离子体蚀刻将在保形层和下层中建立不同的蚀刻速率。

5. 发明授权

US5164339A Fabrication of oxynitride frontside microstructures 失效
标题翻译：氮氧化物前端微结构的制备
公开(公告)号：US5164339A
公开(公告)日：1992-11-17
申请号：US707931
申请日：1991-05-28
申请人： George E. Gimpelson
发明人： George E. Gimpelson
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , Y10S148/159
摘要： Method for producing a low stress silicon oxynitride microstructure on a semiconductor substrate at temperatures not higher than 500.degree. C. The method is particularly adapted for forming integrated silicon sensors where the oxynitride microstructure is fabricated on a substrate under conditions which do not harm the integrated circuit electronics.
摘要翻译：用于在不高于500℃的温度下在半导体衬底上生产低应力氮氧化硅微结构的方法。该方法特别适用于形成集成的硅传感器，其中氮氧化物微观结构在不损害集成电路的条件下制造在衬底上电子产品。

6. 发明授权

US4705597A Photoresist tapering process 失效
标题翻译：光刻胶渐变工艺
公开(公告)号：US4705597A
公开(公告)日：1987-11-10
申请号：US723239
申请日：1985-04-15
申请人： George E. Gimpelson , Cheryl L. Holbrook , Anthony L. Rivoli
发明人： George E. Gimpelson , Cheryl L. Holbrook , Anthony L. Rivoli
IPC分类号： G03F7/20 , G03F7/40 , H01L21/3105 , H01L21/311 , B44C1/22 , H01L21/312
CPC分类号： G03F7/40 , G03F7/20 , H01L21/31058 , H01L21/311 , H01L21/31138
摘要： Photoresist apertures having tapered sidewalls can be provided by first opening the aperture in accordance with ordinary practice followed by the exposure of the photoresist to a suitable energy source such as a flood exposure to wideband light, the heating of the photoresist to round the peripheral edges of the aperture and the exposure of the thus pretreated photoresist to an environment which removes photoresist from the inside wall of the aperture until the desired tapered profile is obtained. In the preferred practice of the invention, the pretreated photoresist is removed from the inside wall of the aperture through exposure to a dry oxygen plasma etch.
摘要翻译：具有锥形侧壁的光致抗蚀剂孔可以通过首先根据普通实践打开孔来提供，然后将光致抗蚀剂曝光到合适的能量源，例如暴露于宽带光的光照，光致抗蚀剂加热以使周围的边缘孔和曝光这样预处理的光致抗蚀剂到从孔的内壁去除光致抗蚀剂的环境，直到获得所需的锥形轮廓。在本发明的优选实践中，通过暴露于干氧等离子体蚀刻，从孔的内壁去除预处理的光致抗蚀剂。

7. 发明授权

US4666737A Via metallization using metal fillets 失效
标题翻译：通过使用金属片的金属化
公开(公告)号：US4666737A
公开(公告)日：1987-05-19
申请号：US828186
申请日：1986-02-11
申请人： George E. Gimpelson , Anthony L. Rivoli , John T. Gasner , Elias W. George
发明人： George E. Gimpelson , Anthony L. Rivoli , John T. Gasner , Elias W. George
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76877
摘要： A method is provided for semiconductor manufacture wherein a via is defined and etched through an insulative layer of the device to an underlying conductive region and metal fillets are formed in the corner regions of the via. A conformal metal layer is then deposited onto the device and etched until all metal is removed from the insulative layer surface. Finally, a second metal interconnect layer is deposited onto the device and the desired interconnect pattern is defined. The fillets displace the metal subsequently deposited on the via side surface laterally toward the center of the via, thereby preventing severe self-shadowing problems and improving step coverage of metal into the via.
摘要翻译：提供了一种用于半导体制造的方法，其中通孔被限定并通过器件的绝缘层蚀刻到下面的导电区域，并且金属片状物形成在通孔的拐角区域中。然后将保形金属层沉积到器件上并蚀刻直到从绝缘层表面去除所有金属。最后，将第二金属互连层沉积到器件上，并且定义所需的互连图案。这些圆角使随后沉积在通孔侧表面上的金属横向移向通孔的中心，从而防止严重的自阴影问题并改善金属进入通孔的步骤覆盖。

8. 发明授权

US4515652A Plasma sculpturing with a non-planar sacrificial layer 失效
标题翻译：等离子体雕刻与非平面牺牲层
公开(公告)号：US4515652A
公开(公告)日：1985-05-07
申请号：US591597
申请日：1984-03-20
申请人： George E. Gimpelson , Cheryl L. Russo
发明人： George E. Gimpelson , Cheryl L. Russo
IPC分类号： C23F4/00 , B23K10/00 , B23K28/00 , C03C15/00 , C03C23/00 , H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/311 , B44C1/22 , B29C17/08 , C03C25/06
CPC分类号： C03C15/00 , B23K10/00 , B23K28/00 , C03C23/006 , H01L21/31055 , H01L21/31116
摘要： A method of plasma planarization of the surface topography of a substrate layer is provided wherein a sacrificial layer, having an etch rate substantially different from the etch rate of the substrate layer, is applied to the surface topography of that substrate layer. The sacrificial and substrate layers are then plasma etched to remove the sacrificial layer and portions of the substrate layer. The ratio of substrate layer to sacrificial layer etch rate can be controlled by the specific material and etchant used to compensate for non-planar surface features of the sacrificial layer such that the resulting substrate surface topography is planar.
摘要翻译：提供了衬底层的表面形貌的等离子体平坦化的方法，其中具有与衬底层的蚀刻速率基本不同的蚀刻速率的牺牲层施加到该衬底层的表面形貌。然后等离子体蚀刻牺牲层和衬底层以去除牺牲层和衬底层的部分。可以通过用于补偿牺牲层的非平面表面特征的特定材料和蚀刻剂来控制衬底层与牺牲层蚀刻速率的比例，使得所得到的衬底表面形貌是平面的。

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