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    • 4. 发明授权
    • Analysis method for gases and apparatus therefor
    • 气体及其设备分析方法
    • US6040915A
    • 2000-03-21
    • US147349
    • 1998-12-07
    • Shang-Qian WuJun-ichi MorishitaYoshio IshiharaTetsuya Kimijima
    • Shang-Qian WuJun-ichi MorishitaYoshio IshiharaTetsuya Kimijima
    • G01N21/39G01N21/61
    • G01N21/39G01N21/3504
    • A method for analyzing an impurity in a gas including the steps of: introducing a gas with an impurity into a first cell; introducing a gas with no impurity into a second cell; maintaining identical pressures in the first and second cells; irradiating a light from a light irradiating source; varying the frequency of the light over a frequency spectrum including an absorption frequency of the impurity; splitting the light by a splitting device in order to pass a first beam through the first cell and to pass a second beam through the second cell; measuring the intensity of the light passing through the first cell over the frequency spectrum with a first measuring device and the intensity of the light passing through the second cell over the frequency spectrum with a second measuring device; and determining an absorption spectrum of the impurity in the gas based on the difference between data measured with the first measuring device and data from measured with the second measuring device.
    • PCT No.PCT / JP98 / 01608 Sec。 371日期1998年12月7日第 102(e)日期1998年12月7日PCT提交1998年4月8日PCT公布。 WO98 / 45686 PCT公开 日期:1998年10月15日一种用于分析气体中的杂质的方法,包括以下步骤:将具有杂质的气体引入第一电池; 将无杂质的气体引入第二电池; 在第一和第二细胞中保持相同的压力; 照射来自光照射源的光; 在包括杂质的吸收频率的频谱上改变光的频率; 通过分离装置分离光,以使第一光束通过第一单元并使第二光束通过第二单元; 利用第一测量装置测量在频谱上通过第一单元的光的强度,并用第二测量装置测量通过频谱通过第二单元的光的强度; 以及基于由第一测量装置测量的数据与由第二测量装置测量的数据之间的差异来确定气体中的杂质的吸收光谱。
    • 5. 发明授权
    • Infrared spectroscopic analysis method for gases and device employing
the method therein
    • 气体的红外光谱分析方法及其中使用的方法
    • US5821537A
    • 1998-10-13
    • US887262
    • 1997-07-02
    • Yoshio IshiharaHiroshi MasusakiShang-Qian WuKoh Matsumoto
    • Yoshio IshiharaHiroshi MasusakiShang-Qian WuKoh Matsumoto
    • G01J3/433G01N21/39G01N21/35
    • G01N21/39G01J3/433G01N21/3504G01N2021/399G01N21/3554
    • A device and method for measuring an impurity in a trace concentration in a gas to be measured by infrared spectroscopic analysis employing a diode laser are provided. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by a pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak. In the case where molecules of the gaseous impurity form clusters in the gas to be measured, analysis is carried while dissociating the clusters by irradiating light having a photon energy of 0.5 eV or greater. The device and method are particularly suitable for carrying out analysis of trace quantities of impurities present in the gases which are used as materials for semiconductor manufacturing.
    • 提供了一种通过使用二极管激光的红外光谱分析来测量要测量的气体中的微量浓度的杂质的装置和方法。 为了以高灵敏度和高精度进行分析,将待测量的气体引入样品池5中并通过泵16置于低压状态。来自杂质的强吸收峰的红外光 可以从二极管激光器1振荡,并且通过使红外线通过单独填充有杂质的样品池5和参考单元8来测量衍生吸收光谱。 比较待测气体的光谱和单独的杂质的光谱,通过确认源自杂质的多个吸收峰来鉴定杂质。 然后从最强峰的吸收强度进行杂质测定。 在气体杂质的分子在待测量的气体中聚集的情况下,通过照射光子能量为0.5eV以上的光来解离簇,进行分析。 该装置和方法特别适用于对用作半导体制造材料的气体中存在的微量杂质进行分析。
    • 6. 发明授权
    • Gas spectrochemical analyzer, and spectrochemical analyzing method
    • 气体光谱分析仪,光谱化学分析法
    • US06519039B1
    • 2003-02-11
    • US09423605
    • 1999-11-12
    • Jun-ichi MorishitaYoshio IshiharaShang-Qian Wu
    • Jun-ichi MorishitaYoshio IshiharaShang-Qian Wu
    • G01N2161
    • G01J3/4338
    • A gas spectroscopic analysis device for analyzing a trace impurity in a sample gas by obtaining the second derivative spectrum of the light absorption intensity by passing frequency modulated diode laser light through a low-pressure sample gas is provided with a modulation amplitude calculating device (1) for controlling the modulation amplitude of the laser light in accordance with the characteristics of diode laser (11); a spectrum calculating device (2) for calculating the peak absorption intensity and the wavelength interval between the minimum values on the left and right hand of the peak in the second derivative spectrum obtained by measurement; and a pressure adjusting device (3) for controlling the pressure inside measuring gas-cell (14) so that the value of the absorption intensity obtained at spectrum calculating device (2) becomes maximal. The optimal value of the modulation amplitude of the laser light is set so that the wavelength interval between the minimum values on the left and right hand of the peak in the second derivative spectrum is 0.0116 nm. The measurement pressure is optimized by setting the modulation amplitude to an optimal value.
    • 一种调制振幅计算装置(1)具有用于通过使调频二极管激光通过低压取样气体获得光吸收强度的二阶导数光谱来分析样品气体中的痕量杂质的气体分光分析装置, 用于根据二极管激光器(11)的特性来控制激光的调制幅度; 用于计算通过测量获得的二阶导数光谱中的峰值的左右手的峰值吸收强度和最小值之间的波长间隔的光谱计算装置(2) 以及用于控制测量气体单元(14)内的压力使得在频谱计算装置(2)处获得的吸收强度的值变得最大的压力调节装置(3)。 将激光的调制幅度的最佳值设定为使二阶导数光谱中的峰的左右两侧的最小值之间的波长间隔为0.0116nm。 通过将调制幅度设置为最佳值来优化测量压力。
    • 7. 发明授权
    • Infrared spectroscopic analysis method for gases and device employing
the method therein
    • 气体的红外光谱分析方法及其中使用的方法
    • US5703365A
    • 1997-12-30
    • US545580
    • 1995-11-20
    • Yoshio IshiharaHiroshi MasusakiShang-Qian WuKoh Matsumoto
    • Yoshio IshiharaHiroshi MasusakiShang-Qian WuKoh Matsumoto
    • G01J3/433G01N21/39G01N21/35
    • G01N21/39G01J3/433G01N21/3504G01N2021/399G01N21/3554
    • The present invention relates to a device and method for measuring an impurity in a trace concentration in a gas to be measured by means of infrared spectroscopic analysis employing a diode laser. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by means of pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak. In the case where molecules of the gaseous impurity form clusters in the gas to be measured, analysis is carried while dissociating the clusters by irradiating light having a photon energy of 0.5 eV or greater. The present invention is particularly suitable for carrying out analysis of trace quantities of impurities present in the gases which are used as materials for semiconductor manufacturing.
    • PCT No.PCT / JP95 / 00523 Sec。 371日期:1995年11月20日 102(e)1995年11月20日日期PCT 1995年3月22日PCT公布。 公开号WO95 / 26497 日期:1995年10月5日本发明涉及通过使用二极管激光器的红外光谱分析来测量要测量的气体中的微量浓度的杂质的装置和方法。 为了以高灵敏度和高精度进行分析,将待测量的气体引入样品池5中,并通过泵16置于低压状态。来自波长区域的红外光来自 可以获得从二极管激光器1振荡的杂质,并且通过使红外线通过单独填充有杂质的样品池5和参考电池8来测量衍生吸收光谱。 比较待测气体的光谱和单独的杂质的光谱,通过确认源自杂质的多个吸收峰来鉴定杂质。 然后从最强峰的吸收强度进行杂质测定。 在气体杂质的分子在待测量的气体中聚集的情况下,通过照射光子能量为0.5eV以上的光来解离簇,进行分析。 本发明特别适用于对用作半导体制造材料的气体中存在的微量杂质进行分析。