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1. 发明申请

US20110281226A1 HEATER SUPPORTING DEVICE 有权
标题翻译：加热器支持设备
公开(公告)号：US20110281226A1
公开(公告)日：2011-11-17
申请号：US13101625
申请日：2011-05-05
申请人： Tetsuya KOSUGI , Hitoshi MURATA , Shinobu SUGIURA , Masaaki UENO
发明人： Tetsuya KOSUGI , Hitoshi MURATA , Shinobu SUGIURA , Masaaki UENO
IPC分类号： F16M11/00
CPC分类号： H01L21/67109
摘要： A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.
摘要翻译：提供一种用于半导体制造装置的加热器支撑装置，以通过防止支撑件与支架的损坏和分离来改善温度特性和预期寿命的均匀性，并且防止在附近的绝热效率的劣化竖炉式天花板。线圈形状的加热元件设置在物体周围。支撑件垂直连接多个。在各个支撑件之间形成椭圆形的空腔。在各个支撑件的上表面和下表面中的一个上形成凹入插入件，并且在相应的支撑件的上表面和下表面中的另一个上形成凸形插入件。凸形插入件插入配合凹入插入物。通过将凹入插入件嵌入到凸插入件中，支撑件垂直连接成多个。

2. 发明申请

US20110021038A1 HEATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：加热装置，基板加工装置及制造半导体装置的方法
公开(公告)号：US20110021038A1
公开(公告)日：2011-01-27
申请号：US12748920
申请日：2010-03-29
申请人： Hitoshi MURATA , Tetsuya KOSUGI , Shinobu SUGIURA
发明人： Hitoshi MURATA , Tetsuya KOSUGI , Shinobu SUGIURA
IPC分类号： H01L21/26 , H05B3/02
CPC分类号： H01L21/324 , H01L21/67109
摘要： Provided are a heating device, a substrate processing apparatus, and a method of manufacturing a semiconductor device, which can suppress differences between heating bodies, and simultaneously, can suppress shearing of a holder due to thermal deformation of the heating element. The heating device comprises: a heating element including a mountain part and a valley part that are alternately connected in plurality in a meander shape with both ends being fixed; holding body receiving parts respectively installed at ends of the valley parts and formed as cutout parts having a width larger than a width of the valley part; an insulating body installed at an outer circumference of the heating element; and a holding body disposed in the holding body receiving part and fixed to the insulating body.
摘要翻译：提供一种加热装置，基板处理装置和半导体装置的制造方法，其能够抑制加热体之间的差异，同时能够抑制由于加热元件的热变形引起的保持器的剪切。加热装置包括：加热元件，其包括山形部分和谷部分，其以固定的两端交替连接成多个弯曲形状; 保持体接纳部，分别安装在谷部的端部，形成为宽度大于谷部宽度的切口部; 安装在所述加热元件的外周的绝缘体; 以及保持体，其设置在所述保持体容纳部中并固定到所述绝缘体。

3. 发明申请

US20120094010A1 SUBSTRATE PROCESSING APPARATUS, TEMPERATURE CONTROLLING METHOD OF SUBSTRATE PROCESSING APPARATUS, AND HEATING METHOD OF SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工装置，基板加工装置的温度控制方法和基板加工装置的加热方法
公开(公告)号：US20120094010A1
公开(公告)日：2012-04-19
申请号：US13192784
申请日：2011-07-28
申请人： Shinobu SUGIURA , Masaaki UENO , Kazuo TANAKA , Masashi SUGISHITA , Hideto YAMAGUCHI , Kenji SHIRAKO
发明人： Shinobu SUGIURA , Masaaki UENO , Kazuo TANAKA , Masashi SUGISHITA , Hideto YAMAGUCHI , Kenji SHIRAKO
IPC分类号： C23C16/52 , B05C11/00
CPC分类号： H01L21/67248 , C23C14/541 , C23C16/4584 , C23C16/52 , G05D23/1931 , G05D23/22 , H01L21/67109
摘要： Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple
摘要翻译：提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。基板处理装置包括加热装置，其构造成加热容纳基板的处理室; 第一温度检测装置，被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置，被配置为使用第二热电偶检测关于加热装置的温度; 控制单元，被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置，被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元，使得控制单元在第一控制模式和第二控制模式之间切换，其中耐热性的第一热电偶的温度检测性能比第一热电偶的温度检测性能高

4. 发明申请

US20110305543A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20110305543A1
公开(公告)日：2011-12-15
申请号：US13156925
申请日：2011-06-09
申请人： Seiyo NAKASHIMA , Yuichi MATSUDA , Takashi NOGAMI , Shinobu SUGIURA , Tomoyuki YAMADA
发明人： Seiyo NAKASHIMA , Yuichi MATSUDA , Takashi NOGAMI , Shinobu SUGIURA , Tomoyuki YAMADA
IPC分类号： H01L21/677 , H01L21/673
CPC分类号： H01L21/67757 , H01L21/67017
摘要： A substrate processing apparatus includes a holder configured to hold a substrate and carry the substrate into a process chamber, a waiting station located outside the process chamber in which the holder waits prior to carrying the substrate into the process chamber, a circulation path configured to circulate a gas throughout the waiting station, and an exhaust path formed in the circulation path and configured to exhaust the gas from the waiting station.
摘要翻译：基板处理装置包括保持器，其构造成保持基板并将基板运送到处理室中，等待站位于处理室外部，其中保持器在将基板运送到处理室之前等待，循环路径被配置为循环整个等候站内的气体，以及形成在循环路径中的排气路径，其构造成从等待站排出气体。

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