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1. 发明申请

US20120094010A1 SUBSTRATE PROCESSING APPARATUS, TEMPERATURE CONTROLLING METHOD OF SUBSTRATE PROCESSING APPARATUS, AND HEATING METHOD OF SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工装置，基板加工装置的温度控制方法和基板加工装置的加热方法
公开(公告)号：US20120094010A1
公开(公告)日：2012-04-19
申请号：US13192784
申请日：2011-07-28
申请人： Shinobu SUGIURA , Masaaki UENO , Kazuo TANAKA , Masashi SUGISHITA , Hideto YAMAGUCHI , Kenji SHIRAKO
发明人： Shinobu SUGIURA , Masaaki UENO , Kazuo TANAKA , Masashi SUGISHITA , Hideto YAMAGUCHI , Kenji SHIRAKO
IPC分类号： C23C16/52 , B05C11/00
CPC分类号： H01L21/67248 , C23C14/541 , C23C16/4584 , C23C16/52 , G05D23/1931 , G05D23/22 , H01L21/67109
摘要： Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple
摘要翻译：提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。基板处理装置包括加热装置，其构造成加热容纳基板的处理室; 第一温度检测装置，被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置，被配置为使用第二热电偶检测关于加热装置的温度; 控制单元，被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置，被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元，使得控制单元在第一控制模式和第二控制模式之间切换，其中耐热性的第一热电偶的温度检测性能比第一热电偶的温度检测性能高

2. 发明申请

US20110056434A1 HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：US20110056434A1
公开(公告)日：2011-03-10
申请号：US12868949
申请日：2010-08-26
申请人： Takatomo YAMAGUCHI , Akihiro SATO , Kenji SHIRAKO , Shuhei SAIDO
发明人： Takatomo YAMAGUCHI , Akihiro SATO , Kenji SHIRAKO , Shuhei SAIDO
IPC分类号： C23C16/32
CPC分类号： C23C16/325 , C23C16/46 , C30B25/08 , C30B29/36 , C30B30/04 , H01L21/67109
摘要： Provided is a heat treatment apparatus in which the temperature of an insulator heated by an induction current can be kept low and a susceptor can be efficiently heated. The heat treatment apparatus is provided for growing silicon carbide single crystal films or silicon carbide polycrystal films on a plurality of silicon carbide substrates. The heat treatment apparatus comprises a coil installed around an outside of a reaction tube to generate a magnetic field, a susceptor installed in the reaction tube and configured to be heated by an induction current, and an insulator installed between the susceptor and the reaction tube. The insulator is divided into parts in a circumferential direction, and an insulating material is inserted between the divided parts of the insulator.
摘要翻译：提供一种热感应装置，其中通过感应电流加热的绝缘体的温度可以保持较低，并且可以有效地加热基座。该热处理设备用于在多个碳化硅衬底上生长碳化硅单晶膜或碳化硅多晶膜。热处理装置包括：安装在反应管外侧以产生磁场的线圈;安装在反应管中并被构造成由感应电流加热的基座;以及安装在基座和反应管之间的绝缘体。绝缘子在圆周方向上被分成多个部分，并且绝缘材料插入在绝缘体的分割部分之间。

3. 发明申请

US20110210118A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUBSTRATE 有权
标题翻译：基板加工装置，制造半导体装置的方法及其制造方法
公开(公告)号：US20110210118A1
公开(公告)日：2011-09-01
申请号：US13034035
申请日：2011-02-24
申请人： Yukitomo HIROCHI , Akinori TANAKA , Akihiro SATO , Takeshi ITOH , Daisuke HARA , Kenji SHIRAKO , Kazuhiro MORIMITSU , Masanao FUKUDA
发明人： Yukitomo HIROCHI , Akinori TANAKA , Akihiro SATO , Takeshi ITOH , Daisuke HARA , Kenji SHIRAKO , Kazuhiro MORIMITSU , Masanao FUKUDA
IPC分类号： H05B6/10
CPC分类号： H05B6/108
摘要： There are provided a substrate processing apparatus and a method of manufacturing a substrate in which induction heating of members made of a metal material and installed outside an induction coil is suppressed and safety may be improved during processing of a substrate. The substrate processing apparatus includes: a reaction tube for accommodating a substrate; an induction heating unit installed to surround an outer circumference of the reaction tube; a shielding unit installed to surround an outside of the induction heating unit; a gas supply unit for supplying at least a source gas into the reaction tube; and a controller for processing the substrate by heating an inside of the reaction tube using the induction heating unit, and supplying at least the source gas from the gas supply unit into the reaction tube.
摘要翻译：提供了一种基板处理装置和制造基板的方法，其中抑制了由金属材料制成并且安装在感应线圈外部的构件的感应加热，并且在基板的加工期间可以改善安全性。基板处理装置包括：用于容纳基板的反应管; 感应加热单元，安装成围绕反应管的外周; 屏蔽单元，安装成围绕感应加热单元的外部; 气体供给单元，用于至少将源气体供给到所述反应管中; 以及控制器，其通过使用所述感应加热单元加热所述反应管的内部来处理所述基板，并且至少将来自所述气体供应单元的源气体供应到所述反应管中。

4. 发明申请

US20120067869A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20120067869A1
公开(公告)日：2012-03-22
申请号：US13229543
申请日：2011-09-09
申请人： Kenji SHIRAKO , Takatomo YAMAGUCHI , Shuhei SAIDO , Akihiro SATO
发明人： Kenji SHIRAKO , Takatomo YAMAGUCHI , Shuhei SAIDO , Akihiro SATO
IPC分类号： H05B6/10 , F28F13/00
CPC分类号： F28F1/00 , C23C16/44 , C23C16/4584 , C30B25/02 , C30B29/36 , F28F3/086 , F28F21/02 , H01L21/67109 , H05B6/02 , H05B6/105
摘要： Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other.
摘要翻译：提供一种能够将炉口部的温度保持在构成炉部的各构件的耐热温度以下的基板处理装置。基板处理装置包括：处理室，被配置为处理以预定间隔垂直堆叠的多个基板; 衬底保持器，其构造成将所述多个衬底保持在所述处理室中; 以及第一热交换器，其安装在所述处理室中，以从所述基板保持器的下部支撑所述基板保持器，并且被配置为与所述处理室中的所述基板保持器的侧面沿着向下的方向流动的气体进行热交换其特征在于，所述第一热交换器具有向下方延伸的中空圆柱形绝缘管和安装在所述绝缘管中的绝缘板，绝缘板的上下绝缘体的区域彼此空间连接。

5. 发明申请

US20110204036A1 HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：US20110204036A1
公开(公告)日：2011-08-25
申请号：US13029499
申请日：2011-02-17
申请人： Masaki MUROBAYASHI , Takatomo YAMAGUCHI , Kenji SHIRAKO , Shuhei SAIDO , Akihiro SATO , Daisuke HARA
发明人： Masaki MUROBAYASHI , Takatomo YAMAGUCHI , Kenji SHIRAKO , Shuhei SAIDO , Akihiro SATO , Daisuke HARA
IPC分类号： H05B1/00
CPC分类号： H01L21/67109 , H01L21/67248
摘要： Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit. The heat treatment apparatus for growing a single crystalline film or polycrystalline films on a plurality of substrates includes a boat configured to hold the plurality of substrates, a cylindrical heat generating material (23) installed to surround the boat and constituting a reaction chamber (32), a reaction tube (21) installed to surround the cylindrical heat generating material, a cylindrical insulating part (25) installed between the cylindrical heat generating material and the reaction tube, a temperature measurement chip (24) installed between the cylindrical heat generating material and the cylindrical insulating part, and a radiation thermometer (42) configured to measure a temperature of the temperature measurement chip, wherein the radiation thermometer is disposed below a lower end of the reaction tube.
摘要翻译：本发明提供一种热处理装置，其具有安装在反应室外的温度检测部，能够防止处理气体与温度检测部接触而形成膜，提高温度检测部的测定值的可靠性和再生性。用于在多个基板上生长单晶膜或多晶膜的热处理装置包括：构造成保持多个基板的舟形件，安装成围绕船形成并构成反应室（32）的圆柱形发热材料（23），围绕圆筒形发热材料安装的反应管（21），安装在圆筒形发热材料和反应管之间的圆柱形绝缘部分（25），安装在圆柱形发热材料和圆柱形绝缘部件和配置成测量温度测量芯片的温度的辐射温度计（42），其中辐射温度计设置在反应管的下端。

6. 发明申请

US20100224128A1 SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体制造设备
公开(公告)号：US20100224128A1
公开(公告)日：2010-09-09
申请号：US12717420
申请日：2010-03-04
申请人： Takatomo YAMAGUCHI , Kenji SHIRAKO , Hiroaki HIRAMATSU
发明人： Takatomo YAMAGUCHI , Kenji SHIRAKO , Hiroaki HIRAMATSU
IPC分类号： C23C16/00 , H01L21/02
CPC分类号： H01J37/32357 , H01J37/321 , H01J37/32779
摘要： Provided is a semiconductor manufacturing apparatus in which the density of plasma generating in a reaction chamber can be uniformly maintained. The semiconductor manufacturing apparatus comprises a process chamber configured to process a substrate, a plurality of electrodes installed outside the process chamber for generating plasma, and an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber.
摘要翻译：提供了可以均匀地保持反应室中产生等离子体的密度的半导体制造装置。半导体制造装置包括：处理室，被配置为处理基板;多个电极，设置在处理室外部用于产生等离子体;以及调节单元，设置在处理室和电极之间，用于调节处理室中等离子体产生的密度。

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