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1. 发明授权

US06229165B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06229165B1
公开(公告)日：2001-05-08
申请号：US09143510
申请日：1998-08-28
申请人： Tetsushi Sakai , Nobuaki Ieda , Masayuki Ino , Shigeru Nakajima , Yukio Akazawa , Tsuneo Mano , Hiroshi Inokawa
发明人： Tetsushi Sakai , Nobuaki Ieda , Masayuki Ino , Shigeru Nakajima , Yukio Akazawa , Tsuneo Mano , Hiroshi Inokawa
IPC分类号： H01L31062
CPC分类号： H01L27/1443 , H01L27/14812 , H01L31/101
摘要： This invention provides a semiconductor device including a silicon layer, an insulating layer formed on the silicon layer, a first semiconductor device formed on the insulating film to convert light into an electric signal, and a second semiconductor device formed on the insulating film, wherein a silicon region is formed in the silicon layer to shield the second semiconductor device from light, and a through hole extending through the silicon layer except for the silicon region to input light to the first semiconductor device is formed in that portion of the silicon layer corresponding to the lower portions of the first and second semiconductor devices.
摘要翻译：本发明提供一种半导体器件，包括硅层，形成在硅层上的绝缘层，形成在绝缘膜上以将光转换为电信号的第一半导体器件，以及形成在绝缘膜上的第二半导体器件，其中，在硅层中形成硅区域以遮蔽第二半导体器件，并且在对应于第一半导体器件的硅层的部分中形成有通过除了硅区域之外的硅层延伸到第一半导体器件的光的通孔，第一和第二半导体器件的下部。

2. 发明授权

US07121623B2 Vehicular seat structure 失效
标题翻译：车座结构
公开(公告)号：US07121623B2
公开(公告)日：2006-10-17
申请号：US10947315
申请日：2004-09-23
申请人： Kiyotaka Fujihara , Koichi Sugioka , Mamoru Otsubo , Eiji Ozawa , Toshikazu Saito , Yumio Shibata , Hiroshi Inokawa
发明人： Kiyotaka Fujihara , Koichi Sugioka , Mamoru Otsubo , Eiji Ozawa , Toshikazu Saito , Yumio Shibata , Hiroshi Inokawa
IPC分类号： A47C15/00
CPC分类号： B60N2/36 , B60N2/01 , B60N2/3013 , Y10S280/05
摘要： A vehicle is provided which enables rear occupants to sit on a rear seat in a vehicle provided with seats arranged in a substantially longitudinal direction while simultaneously securing the comfort and safety of the rear occupants in a relatively small vehicle. The seat structure of the vehicle includes a wide rear seat provided with right and left seated parts for rear occupants M2, M2 at a rear side of a front seat for a driver. A backrest corresponding to the right and left seated parts is provided on the rear seat that extends diagonally rearward from a center portion thereof toward sides of the vehicle body. Raised, convex portions for regulating the lateral movement of the occupants are provided between each seated part in the rear seat, at the center of the backrest and in the front seat.
摘要翻译：提供了一种车辆，其使得后乘客能够坐在设置有大致纵向方向的座椅的车辆的后座上，同时确保后乘客在相对较小的车辆中的舒适性和安全性。车辆的座椅结构包括宽后排座椅，其设置有用于驾驶员的前座椅的后侧的后乘客M 2，M 2的左右安置部分。在左右座椅上的左右座椅部件的靠背部，其从中央部向后方向后方延伸设置在车身侧。在后排座椅的每个座位之间，靠背的中心和前排座椅之间设置有用于调节乘员侧向运动的凸起的凸起部分。

3. 发明授权

US5585659A Complementary metal-insulator-semiconductor devices 失效
标题翻译：互补金属 - 绝缘体 - 半导体器件
公开(公告)号：US5585659A
公开(公告)日：1996-12-17
申请号：US320690
申请日：1994-10-11
申请人： Toshio Kobayashi , Yukio Okazaki , Masayasu Miyake , Hiroshi Inokawa , Takashi Morimoto
发明人： Toshio Kobayashi , Yukio Okazaki , Masayasu Miyake , Hiroshi Inokawa , Takashi Morimoto
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/02 , H01L29/78 , H01L29/76
CPC分类号： H01L21/823842
摘要： A method for fabricating semiconductor devices wherein polysilicon gates for complementary-type field-effect semiconductor devices are formed of polysilicon to which impurity doped simultaneously to the polysilicon deposition; the both gates having the dual N.sup.+ /P.sup.+ polysilicon gate structure, so that the both N- and P-channel transistors are formed as the surface-channel type ones; and therefore, the off-characteristic, the short channel effect, and the controllability of threshold voltage are progressed. More specifically, N- and P-channel MISFETs are provided on a common semiconductor substrate (1); N-type polysilicon (9) doped with N-type impurity is adopted as the gate electrode for the N-channel MISFET; P-type polysilicon (8) doped with P-type impurity is adopted as the gate electrode for the P-channel MISFET; and a narrow region preventing the mutual diffusion of impurities is provided between portions of respective polysilicon.
摘要翻译：一种用于制造半导体器件的方法，其中用于互补型场效应半导体器件的多晶硅栅极由同时掺杂到多晶硅沉积的杂质的多晶硅形成; 两个门具有双N + / P +多晶硅栅极结构，使得N沟道晶体管和P沟道晶体管形成为表面沟道型晶体管; 因此，进行关闭特性，短通道效应和阈值电压的可控性。更具体地，在公共半导体衬底（1）上提供N沟道和P沟道MISFET。采用N型杂质掺杂的N型多晶硅（9）作为N沟道MISFET的栅电极; 采用掺杂有P型杂质的P型多晶硅（8）作为P沟道MISFET的栅电极; 并且在各个多晶硅的部分之间设置防止杂质相互扩散的窄区域。

4. 发明授权

US06283242B1 Structure of air cleaner of motorcycle 失效
标题翻译：摩托车空气净化器结构
公开(公告)号：US06283242B1
公开(公告)日：2001-09-04
申请号：US09393160
申请日：1999-09-10
申请人： Akio Umeoka , Hiroshi Inokawa
发明人： Akio Umeoka , Hiroshi Inokawa
IPC分类号： B62D6102
CPC分类号： F02M35/162 , B62K11/04 , F02B61/02 , F02M35/024
摘要： A compact air cleaner for a motorcycle engine has its intake duct directed in a widthwise direction of the motorcycle. The air cleaner includes an air cleaner case, an air cleaner element and a case cover. The air cleaner element partitions an inner portion of the air cleaner case and case cover into a clean room and a dirty room. The air cleaner element extends in the motorcycle's travel direction. An intake port communicates with the dirty room and opens to a space surrounded by a rear face of the clean room, a front portion of a rear fender and a bottom portion of a seat.
摘要翻译：用于摩托车发动机的紧凑型空气净化器具有沿摩托车的宽度方向引导的进气管。空气净化器包括空气滤清器壳体，空气滤清器元件和壳体盖。空气滤清器元件将空气滤清器壳体和壳体盖的内部分隔成洁净室和脏室。空气滤清器元件在摩托车的行进方向上延伸。进气口与脏室连通，并通向洁净室的后表面，后挡泥板的前部和座的底部所包围的空间。

5. 发明授权

US06360839B1 Cooling device for motorcycle 有权
标题翻译：摩托车冷却装置
公开(公告)号：US06360839B1
公开(公告)日：2002-03-26
申请号：US09655424
申请日：2000-09-05
申请人： Naoki Urano , Hiroshi Inokawa
发明人： Naoki Urano , Hiroshi Inokawa
IPC分类号： B60K1104
CPC分类号： B62K11/04 , F01P5/10 , F01P11/0295 , F01P2050/16 , F02B61/02
摘要： A cooling device is efficiently arranged which simplifies and reduces the weight of piping for the cooling device by shortening the piping. A cooling water pump is arranged on a vertically elongated skid plate at one side of a crankcase. A reservoir tank is located on the other side of the crankcase. The reservoir tank is formed of synthetic resin or similar material. The reservoir tank is housed in a space between the skid plate and a front section of an ACG case of the reservoir tank.
摘要翻译：有效地布置冷却装置，其通过缩短管道来简化和减少冷却装置的管道的重量。冷却水泵布置在曲轴箱一侧的垂直伸长的滑板上。储罐位于曲轴箱的另一侧。储罐由合成树脂或类似材料形成。储存罐容纳在滑板与储罐的ACG壳体的前部之间的空间中。

6. 发明授权

US5382532A Method for fabricating CMOS semiconductor devices 失效
标题翻译：制造CMOS半导体器件的方法
公开(公告)号：US5382532A
公开(公告)日：1995-01-17
申请号：US946080
申请日：1992-09-16
申请人： Toshio Kobayashi , Yukio Okazaki , Masayasu Miyake , Hiroshi Inokawa , Takashi Morimoto
发明人： Toshio Kobayashi , Yukio Okazaki , Masayasu Miyake , Hiroshi Inokawa , Takashi Morimoto
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/02 , H01L29/78 , H01L21/265
CPC分类号： H01L21/823842
摘要： A method for fabricating semiconductor devices wherein polysilicon gates for complementary-type field-effect semiconductor devices are formed of polysilicon to which impurity doped simultaneously to the polysilicon deposition; the both gates having the dual N.sup.+ /P.sup.+ polysilicon gate structure, so that the both N- and P-channel transistors are formed as the surface-channel type ones; and therefore, the off-characteristic, the short channel effect, and the controllability of threshold voltage are progressed. More specifically, N- and P-channel MISFETs are provided on a common semiconductor substrate (1); N-type polysilicon (9) doped with N-type impurity is adopted as the gate electrode for the N-channel MISFET; P-type polysilicon (8) doped with P-type impurity is adopted as the gate electrode for the P-channel MISFET; and a narrow region preventing the mutual diffusion of impurities is provided between portions of respective polysilicon.
摘要翻译：一种用于制造半导体器件的方法，其中用于互补型场效应半导体器件的多晶硅栅极由同时掺杂到多晶硅沉积的杂质的多晶硅形成; 两个门具有双N + / P +多晶硅栅极结构，使得N沟道晶体管和P沟道晶体管形成为表面沟道型晶体管; 因此，进行关闭特性，短通道效应和阈值电压的可控性。更具体地，在公共半导体衬底（1）上提供N沟道和P沟道MISFET。采用N型杂质掺杂的N型多晶硅（9）作为N沟道MISFET的栅电极; 采用掺杂有P型杂质的P型多晶硅（8）作为P沟道MISFET的栅电极; 并且在各个多晶硅的部分之间设置防止杂质相互扩散的窄区域。

7. 发明授权

US5213991A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5213991A
公开(公告)日：1993-05-25
申请号：US856801
申请日：1992-03-24
申请人： Hiroshi Inokawa , Toshio Kobayashi , Kazuhide Kiuchi
发明人： Hiroshi Inokawa , Toshio Kobayashi , Kazuhide Kiuchi
IPC分类号： H01L21/20 , H01L21/336 , H01L21/768 , H01L29/10 , H01L29/417 , H01L29/45 , H01L29/78
CPC分类号： H01L29/66651 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/76877 , H01L29/1033 , H01L29/41725 , H01L29/456 , H01L29/78
摘要： In a method of making a MOSFET-type semiconductor device of this invention, a surface of a semiconductor substrate is covered in a predetermined pattern with an insulating layer comprising a silicon-nitride-containing film or with an insulating layer whose top surface and side surfaces bear a silicon-nitride-containing film, thereby forming on the semiconductor substrate a recess region at which the semiconductor substrate is exposed. An epitaxial silicon film and polycrystalline silicon film are formed simultaneously on the exposed semiconductor substrate and on the insulating film, respectively. A whole channel region and a part of source and drain diffused-layer regions are formed in the epitaxial silicon film, and source and drain diffused-layer regions are formed in the polycrystalline silicon film. A gate electrode of this MOSFET-type semiconductor device may be formed at the recess region by a self-align method.
摘要翻译：在制造本发明的MOSFET型半导体器件的方法中，半导体衬底的表面以包含含氮化硅的膜的绝缘层或具有绝缘层的预定图案被覆盖，所述绝缘层的顶表面和侧表面承载含氮化硅的膜，从而在半导体衬底上形成露出半导体衬底的凹部区域。外延硅膜和多晶硅膜分别同时形成在暴露的半导体衬底和绝缘膜上。在外延硅膜中形成整个沟道区域和一部分源极和漏极扩散层区域，并且在多晶硅膜中形成源极和漏极扩散层区域。该MOSFET型半导体器件的栅极可以通过自对准方法在凹陷区域形成。

8. 发明授权

US07684975B2 Morphological analyzer, natural language processor, morphological analysis method and program 有权
标题翻译：形态分析仪，自然语言处理器，形态分析方法和程序
公开(公告)号：US07684975B2
公开(公告)日：2010-03-23
申请号：US10777263
申请日：2004-02-12
申请人： Kazuo Aoki , Hiroshi Inokawa , Akihiro Nakayama
发明人： Kazuo Aoki , Hiroshi Inokawa , Akihiro Nakayama
IPC分类号： G06F17/21
CPC分类号： G06F17/2755 , G06F17/274
摘要： The invention can include a token list generating unit 11 for decomposing a natural language text to be processed into tokens that are components of the natural language text and registering them on a token list, and a token string selecting unit 13 for selecting optimum token strings for composing the natural language text to be processed on the basis of the token list generated by the token list generating unit 11. The token list generating unit 11 registers, on the token list, tokens among the tokens obtained by decomposing the natural language text to be processed except tokens decomposable into smaller tokens according to conditions imposed on the morphological analysis.
摘要翻译：本发明可以包括令牌列表生成单元11，用于将要处理的自然语言文本分解成自然语言文本的组件的令牌并将其注册在令牌列表上;令牌字符串选择单元13，用于选择最佳令牌字符串根据由令牌列表生成单元11生成的令牌列表，构成要处理的自然语言文本。令牌列表生成单元11在令牌列表上登记通过将自然语言文本分解为所获得的令牌之间的令牌根据形态分析条件，除了令牌可分解成更小的令牌。

9. 发明申请

US20050116517A1 Vehicular seat structure 失效
标题翻译：车座结构
公开(公告)号：US20050116517A1
公开(公告)日：2005-06-02
申请号：US10947315
申请日：2004-09-23
申请人： Kiyotaka Fujihara , Koichi Sugioka , Mamoru Otsubo , Eiji Ozawa , Toshikazu Saito , Yumio Shibata , Hiroshi Inokawa
发明人： Kiyotaka Fujihara , Koichi Sugioka , Mamoru Otsubo , Eiji Ozawa , Toshikazu Saito , Yumio Shibata , Hiroshi Inokawa
IPC分类号： B60N2/00 , B60N2/01 , B60N2/20 , B60N2/22 , B60N2/24 , B60N2/30 , B60N2/36 , A47C15/00
CPC分类号： B60N2/36 , B60N2/01 , B60N2/3013 , Y10S280/05
摘要： A vehicle is provided which enables rear occupants to sit on a rear seat in a vehicle provided with seats arranged in a substantially longitudinal direction while simultaneously securing the comfort and safety of the rear occupants in a relatively small vehicle. The seat structure of the vehicle includes a wide rear seat provided with right and left seated parts for rear occupants M2, M2 at a rear side of a front seat for a driver. A backrest corresponding to the right and left seated parts is provided on the rear seat that extends diagonally rearward from a center portion thereof toward sides of the vehicle body. Raised, convex portions for regulating the lateral movement of the occupants are provided between each seated part in the rear seat, at the center of the backrest and in the front seat.
摘要翻译：提供了一种车辆，其使得后乘客能够坐在设置有大致纵向方向的座椅的车辆的后座上，同时确保后乘客在相对较小的车辆中的舒适性和安全性。车辆的座椅结构包括宽后排座椅，其设置有用于驾驶员的前座椅的后侧的后乘客M 2，M 2的左右安置部分。在左右座椅上的左右座椅部件的靠背部，其从中央部向后方向后方延伸设置在车身侧。在后排座椅的每个座位之间，靠背的中心和前排座椅之间设置有用于调节乘员侧向运动的凸起的凸起部分。

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