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    • 3. 发明授权
    • Displacement control actuator
    • 位移控制执行器
    • US5994821A
    • 1999-11-30
    • US978422
    • 1997-11-25
    • Katsumi ImadaTetsuro OtsuchiMasato SugimotoYoshihiro TomitaOsamu Kawasaki
    • Katsumi ImadaTetsuro OtsuchiMasato SugimotoYoshihiro TomitaOsamu Kawasaki
    • H01L41/09H01L41/04
    • H01L41/094
    • Rectangular piezoelectric substrates each of which has main surfaces opposed to each other, measures 50 .mu.m thick by 1 mm wide by 8 mm long, and is made of lithium niobate (LiNbO.sub.3), are directly bonded on the main surfaces so that their axes of polarization are set in directions reverse to each other, thereby composing a piezoelectric element. Electrodes which are 0.2 .mu.m thick and made of chromium-nickel are formed on the two main surfaces of the piezoelectric element opposed to each other, thereby resulting in a precision displacement control actuator of a bimorph type mechanical-electrical converter element. This configuration makes it possible to provide a compact precision displacement control actuator which has a large displacement and extremely small variations of characteristics such as displacement and resonance frequency.
    • 矩形压电基板各自具有彼此相对的主表面,其厚度为50μm厚×1mm×8mm长,由铌酸锂(LiNbO 3)构成,直接接合在主表面上,使得它们的轴线 极化被设置在彼此相反的方向上,从而构成压电元件。 在压电元件的两个主表面上形成厚度为0.2μm,由铬镍制成的电极,从而形成双压电晶片式机电转换元件的精密位移控制致动器。 这种构造使得可以提供一种紧凑的精确位移控制致动器,其具有大的位移和极小的位移和共振频率等特性的变化。
    • 5. 发明授权
    • Piezoelectric resonator and method for fabricating the same
    • 压电谐振器及其制造方法
    • US06243933B1
    • 2001-06-12
    • US09303682
    • 1999-05-03
    • Masato SugimotoKatsu TakedaYoshihiro TomitaOsamu Kawasaki
    • Masato SugimotoKatsu TakedaYoshihiro TomitaOsamu Kawasaki
    • H04R1700
    • H03H9/177H03H3/04H03H9/02031H03H9/0207H03H9/176Y10T29/42Y10T29/49004
    • A wafer with a reversed domain is prepared for two piezoelectric single crystal plates and of about the same thickness by using direct bonding without any adhesive. Driving electrodes are formed on two principal planes of the wafer with a reversed domain to provide a piezoelectric resonator. A piezoelectric resonator having the structure with a reversed polarization and using odd-order vibration modes vibrating with a fundamental wave has a wavelength of a thickness thereof and suppresses scattering of the thickness of the domains with a reversed polarization. In the direct bonding, the axes of the spontaneous polarization of the two piezoelectric single crystal plates are reverse to each other and crystalline axes other than the axes of polarization are shifted intentionally by an angle other than zero. Thus, spurious modes are suppressed in a simple way.
    • 对于两个压电单晶板制备具有反向畴的晶片,并且通过直接接合而没有任何粘合剂制备大约相同的厚度。 在晶片的两个主平面上形成驱动电极,具有反向的畴,以提供压电谐振器。 具有反极化结构和使用基波振荡的奇数振动模式的压电谐振器具有其厚度的波长,并且抑制具有反向偏振的畴的厚度的散射。 在直接接合中,两个压电单晶板的自发极化的轴线彼此相反,并且除偏振轴之外的结晶轴有意地以不同于零的角度移动。 因此,以简单的方式抑制杂散模式。
    • 10. 发明授权
    • Piezoelectric device and method of manufacturing the same
    • 压电元件及其制造方法
    • US5982010A
    • 1999-11-09
    • US976452
    • 1997-11-25
    • Akihiko NambaTetsuyoshi OguraYoshihiro TomitaKazuo Eda
    • Akihiko NambaTetsuyoshi OguraYoshihiro TomitaKazuo Eda
    • H01L41/22H01L41/312H01L41/338H03H3/02H01L29/84
    • H03H3/02H01L41/312H01L41/338
    • A piezoelectric device is manufactured by: (1) mirror finishing surfaces of a first substrate and a second substrate made of a piezoelectric element; (2) forming grooves on at least one of the two surfaces of the first and second substrates; (3) joining the mirror-finished surfaces of the first substrate and the second substrate; (4) applying heat to the joined substrates and bonding them; (5) forming an opening on the first substrate so that a part of the exposed areas of the second substrate is exposed through the opening; (6) forming piezoelectric devices by forming electrodes on at least one of the second substrate through the opening and a corresponding area to the exposed area on the rear side of the second substrate; and (7) dividing the bonded substrates into portions each having one of the piezoelectric devices. Through this manufacturing method, piezoelectric devices with high yield ratios and high reliability can be obtained.
    • 压电器件通过以下制造:(1)第一衬底和由压电元件制成的第二衬底的镜面精加工表面; (2)在第一和第二基板的两个表面中的至少一个上形成凹槽; (3)连接第一基板和第二基板的镜面抛光面; (4)向接合的基片施加热量并将其粘合; (5)在所述第一基板上形成开口,使得所述第二基板的所述暴露区域的一部分通过所述开口露出; (6)通过在所述第二基板中的至少一个上通过所述开口形成电极并形成与所述第二基板的后侧上的暴露区域相对应的区域来形成压电装置; 和(7)将接合的衬底分成各自具有一个压电器件的部分。 通过该制造方法,可以获得高屈服比和高可靠性的压电装置。