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1. 发明申请

US20080035898A1 Manufacturing Method and Usage of Crystallized Metal Oxide Thin Film 有权
标题翻译：结晶金属氧化物薄膜的制造方法和用途
公开(公告)号：US20080035898A1
公开(公告)日：2008-02-14
申请号：US11836387
申请日：2007-08-09
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
IPC分类号： B05D3/06 , C01B13/00
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译：提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素，在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物同时照射波长为200nm以下的紫外线。

2. 发明授权

US08871363B2 Resistor film for bolometer 有权
标题翻译：测辐射热敏电阻膜
公开(公告)号：US08871363B2
公开(公告)日：2014-10-28
申请号：US13393556
申请日：2010-09-01
申请人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
发明人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
IPC分类号： B32B5/14 , B32B9/00 , C01G31/02 , G01J5/20 , H01C3/04 , H01C17/065 , H01C7/02 , G01J5/02 , G01J5/04
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译：提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。

3. 发明申请

US20120196150A1 RESISTOR FILM FOR BOLOMETER 有权
标题翻译：电阻膜电阻
公开(公告)号：US20120196150A1
公开(公告)日：2012-08-02
申请号：US13393556
申请日：2010-09-01
申请人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
发明人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
IPC分类号： C01G31/02 , B32B9/00 , C08J7/18 , B05D3/02 , B05D3/06
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译：提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。

4. 发明授权

US07771531B2 Manufacturing method and usage of crystallized metal oxide thin film 有权
标题翻译：结晶金属氧化物薄膜的制造方法和用途
公开(公告)号：US07771531B2
公开(公告)日：2010-08-10
申请号：US11836387
申请日：2007-08-09
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
IPC分类号： C30B11/00 , C30B21/02 , C04B35/64
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译：提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素，在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物同时照射波长为200nm以下的紫外线。

5. 发明申请

US20080044590A1 Manufacturing Method of Phosphor Film 审中-公开
标题翻译：荧光膜的制造方法
公开(公告)号：US20080044590A1
公开(公告)日：2008-02-21
申请号：US11839270
申请日：2007-08-15
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Toshiya Kumagai
IPC分类号： C08J7/18
CPC分类号： C09K11/7703 , C03C17/256 , C03C17/3417 , C03C2217/212 , C03C2217/228 , C03C2217/23 , C03C2217/242 , C03C2217/948 , C03C2218/116 , C03C2218/32
摘要： Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.
摘要翻译：提供一种能够在玻璃或硅衬底上形成结晶的与渗透相关的Ti，Zr氧化物薄膜的高性能荧光体薄膜材料的制造方法。这种荧光体薄膜的制造方法包括：形成通过添加选自由Ce，Pr，Nd，Sm，Eu，Gd，Tb等构成的组中的至少一种的有机金属薄膜或金属氧化物膜的工序， Dy，Ho，Er，Tm，Yb和Lu与由组成式ABO 3，A 2 BO 4表示的金属氧化物反应， A 3，B 2 O 7（前提是A，B，O位点可能存在缺陷），其中A是选择的元素从Ca，Sr和Ba中选出，B是在基板上选自Ti和Zr的金属元素，以及在室温下向紫外灯照射紫外线，然后在保持基板的同时照射紫外线激光的步骤 400℃以下。在结晶后，将该膜进行氧化处理。

6. 发明申请

US20090318296A1 Method of Producing Superconductive Oxide Material 有权
公开(公告)号：US20090318296A1
公开(公告)日：2009-12-24
申请号：US12227840
申请日：2008-02-05
申请人： Mitsugu Sohma , Tetsuo Tsuchiya , Toshiya Kumagai , Kenichi Tsukada , Kunihiko Koyanagi , Takashi Ebisawa , Hidehiko Ohtu
发明人： Mitsugu Sohma , Tetsuo Tsuchiya , Toshiya Kumagai , Kenichi Tsukada , Kunihiko Koyanagi , Takashi Ebisawa , Hidehiko Ohtu
IPC分类号： H01L39/24
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , H01L39/2451
摘要： The invention provides a method of efficiently producing a superconductive material more excellent in properties without the occurrence of ablation and so forth, and large in area when executing thermal decomposition of an organic compound of metals, and formation of a superconductive material with heat treatment. The method of producing a superconductive material comprising the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, the provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and the main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2), it is executed under the conditions adopting the following range. intensity and the number of pulses of the laser light; 5 mJ/cm2≦intensity of the laser light F≦200 mJ/cm2 1≦the number of pulses P≦198000000 total energy of the laser light; (0.03 J/cm2×a substrate constant)≦total energy≦(89000 J/cm2×a substrate constant) (in the expression, the substrate constant is defined as a number not less than 1 in value, dependent on nature and thickness of the support body) an irradiation condition area surrounded by the straight lines having the following equations; log10 P=K1F+K2 log10 P=K1F+K3 (in the equations, K1 represents a slant connecting between a point F corresponding to an arbitrary point P where transformation into the superconductive material occurs first and a point P corresponding to an arbitrary point F where transformation into the superconductive material occurs first, K2 is a logarithmic value at the point P in F=0 where a value at the point P in F=5 where transformation into the superconductive material occurs first is outwardly inserted along the slant K1, and K3 is a logarithmic value at the point P in F=0 where a value at the point P in F=5 where ablation occurs first is outwardly inserted along the slant K1, where K3>K2 is established).

7. 发明授权

US06624384B2 Method for manufacturing infrared ray sensor 有权
公开(公告)号：US06624384B2
公开(公告)日：2003-09-23
申请号：US09984853
申请日：2001-10-31
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Tsutomu Yoshitake , Yuichi Shimakawa , Yoshimi Kubo
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Tsutomu Yoshitake , Yuichi Shimakawa , Yoshimi Kubo
IPC分类号： B23K2600
CPC分类号： C23C26/02 , G01J5/20
摘要： In an infrared ray sensor for a bolometer, a bridge structure body, a resistive element film for the bolometer, and a protection film is formed via a space on a substrate, and is formed into a solution form by dissolving metal organic compound into solvent. The solution is applied and dried. A laser ray is irradiated for the solution with wavelength of 400 nm or less. A bond between carbon and oxygen is decomposed and cut to thereby form an oxide thin-film.

8. 发明授权

US06774088B2 Rare earth-Ba-Cu complex composition and method of producing superconductor using same 失效
标题翻译：稀土 - Ba-Cu络合物的组成及使用其制造超导体的方法
公开(公告)号：US06774088B2
公开(公告)日：2004-08-10
申请号：US10086377
申请日：2002-03-04
申请人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
发明人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
IPC分类号： H01B100
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1295 , Y10S505/70 , Y10S505/734 , Y10S505/741
摘要： A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.
摘要翻译：含有具有稀土元素金属物质，钡和铜以及三氟乙酸或五氟丙酸配体配体，吡啶配体和乙酰丙酮配体的配合物的金属络合物组合物。可以通过将上述金属络合物组合物的有机溶剂溶液涂布到基材上并通过热处理涂层来获得超导膜。

9. 发明授权

US09096440B2 Method of producing superconductive oxide material 有权
标题翻译：制造超导氧化物材料的方法
公开(公告)号：US09096440B2
公开(公告)日：2015-08-04
申请号：US12083650
申请日：2007-07-31
申请人： Mitsugu Sohma , Tetsuo Tsuchiya , Toshiya Kumagai , Kenichi Tsukada , Kunihiko Koyanagi , Takashi Ebisawa , Hidehiko Ohtu
发明人： Mitsugu Sohma , Tetsuo Tsuchiya , Toshiya Kumagai , Kenichi Tsukada , Kunihiko Koyanagi , Takashi Ebisawa , Hidehiko Ohtu
IPC分类号： B05D5/12 , C01G1/02 , C01G3/00 , C23C18/12 , C23C18/14 , C30B7/02 , C30B29/22 , H01L39/24
CPC分类号： C01G1/02 , C01G3/006 , C01P2002/82 , C01P2006/40 , C23C18/1216 , C23C18/1283 , C23C18/1291 , C23C18/14 , C30B7/02 , C30B29/22 , H01L39/2425 , H01L39/2451
摘要： A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals and oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, the provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and the main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein the support body is irradiated with the laser light during a period between the steps (1) and (2) from a surface of the support body, on the opposite side of the surface coated with the solution of the organic compound of the metals for forming the superconductive material.
摘要翻译：制造超导材料的方法包括将形成超导材料的金属的金属有机化合物和氧化物溶液施加到随后干燥的支撑体上的步骤（1），临时烘烤步骤（2）导致金属有机化合物的有机成分发生热分解，以及使金属氧化物变成超导材料的主烘焙工序（3），由此制造外延生长的超导涂层材料，其中，在从支撑体的表面在步骤（1）和（2）之间的期间，在涂覆有用于形成所述支撑体的金属的有机化合物的溶液的表面的相反侧上，用激光照射支撑体超导材料。

10. 发明授权

US08716189B2 Method of producing superconductive oxide material 有权
标题翻译：制造超导氧化物材料的方法
公开(公告)号：US08716189B2
公开(公告)日：2014-05-06
申请号：US12227840
申请日：2008-02-05
申请人： Mitsugu Sohma , Tetsuo Tsuchiya , Toshiya Kumagai , Kenichi Tsukada , Kunihiko Koyanagi , Takashi Ebisawa , Hidehiko Ohtu
发明人： Mitsugu Sohma , Tetsuo Tsuchiya , Toshiya Kumagai , Kenichi Tsukada , Kunihiko Koyanagi , Takashi Ebisawa , Hidehiko Ohtu
IPC分类号： H01L39/24 , H01B12/06 , B05D5/12
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , H01L39/2451
摘要： A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).
摘要翻译：制造超导材料的方法包括将金属有机化合物（形成超导材料的金属的氧化物）的溶液施加到待随后干燥的支撑体上的步骤（1），临时烘烤步骤（2）导致金属有机化合物的有机成分发生热分解，以及使金属氧化物转变为超导材料的主烘焙工序（3），由此制造外延生长的超导涂层材料，其中在涂覆有用于形成超导材料的金属的有机化合物的溶液的支撑体的表面的照射时间和/或与涂覆有机溶液的表面相反的支撑体的表面的时间在步骤（1）和（2）之间的期间，金属与激光的化合物。

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