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1. 发明授权

US08871363B2 Resistor film for bolometer 有权
标题翻译：测辐射热敏电阻膜
公开(公告)号：US08871363B2
公开(公告)日：2014-10-28
申请号：US13393556
申请日：2010-09-01
申请人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
发明人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
IPC分类号： B32B5/14 , B32B9/00 , C01G31/02 , G01J5/20 , H01C3/04 , H01C17/065 , H01C7/02 , G01J5/02 , G01J5/04
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译：提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。

2. 发明申请

US20130065065A1 Oriented Perovskite Oxide Thin Film 有权
标题翻译：定向钙钛矿氧化物薄膜
公开(公告)号：US20130065065A1
公开(公告)日：2013-03-14
申请号：US13640760
申请日：2011-04-12
申请人： Tomohiko Nakajima , Tetsuo Tsuchiya , Takaaki Manabe
发明人： Tomohiko Nakajima , Tetsuo Tsuchiya , Takaaki Manabe
IPC分类号： C30B1/02 , C30B1/10 , C30B1/04
CPC分类号： C30B1/023 , C03C17/001 , C03C17/23 , C03C2217/23 , C04B35/465 , C04B35/4682 , C04B35/495 , C04B2235/3201 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3291 , C04B2235/3298 , C04B2235/441 , C04B2235/665 , C04B2235/768 , C04B2235/787 , C30B1/04 , C30B1/10 , C30B7/06 , C30B29/30 , H01L41/1871 , H01L41/1873
摘要： A thin film which comprises an organic metal salt or an an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn−1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.
摘要翻译：在基板上形成包含有机金属盐或醇盐或非晶态薄膜的薄膜，其中每个薄膜能够形成由组成式A表示的Dion-Jacobson钙钛矿型金属氧化物（Bn-1MnO3n + 1）（其中n为2或更大的自然数; A表示选自Na，K，Rb和Cs中的一种或多种一价阳离子; B包含一种或多种选自三价稀土离子， Bi，二价碱土金属离子和一价碱金属离子; M包括Nb和Ta中的一种或多种;其中固溶体可以用Ti和Zr形成）在非取向基材上。所得产物保持在室温至600℃之间的温度。并且在用紫外线激光等紫外线照射基板上的非晶质薄膜或由有机金属盐或醇盐构成的薄膜的同时进行结晶化。以这种方式，可以制备定向的Dion-Jacobson钙钛矿型氧化物薄膜，其特征在于薄膜可以在（001）方向上在基板上取向。

3. 发明授权

US09187842B2 Oriented perovskite oxide thin film 有权
标题翻译：取向的钙钛矿氧化物薄膜
公开(公告)号：US09187842B2
公开(公告)日：2015-11-17
申请号：US13640760
申请日：2011-04-12
申请人： Tomohiko Nakajima , Tetsuo Tsuchiya , Takaaki Manabe
发明人： Tomohiko Nakajima , Tetsuo Tsuchiya , Takaaki Manabe
IPC分类号： C30B29/24 , C30B1/02 , C03C17/00 , C03C17/23 , C04B35/465 , C04B35/468 , C04B35/495 , C30B7/06 , C30B29/30 , H01L41/187 , C30B1/04 , C30B1/10
CPC分类号： C30B1/023 , C03C17/001 , C03C17/23 , C03C2217/23 , C04B35/465 , C04B35/4682 , C04B35/495 , C04B2235/3201 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3291 , C04B2235/3298 , C04B2235/441 , C04B2235/665 , C04B2235/768 , C04B2235/787 , C30B1/04 , C30B1/10 , C30B7/06 , C30B29/30 , H01L41/1871 , H01L41/1873
摘要： A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn−1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.
摘要翻译：在基材上形成包含有机金属盐或醇盐或非晶态薄膜的薄膜，其中每个薄膜能够形成由组成式A表示的Dion-Jacobson钙钛矿型金属氧化物（ Bn-1MnO3n + 1）（其中n为2或更大的自然数; A表示选自Na，K，Rb和Cs中的一种或多种一价阳离子; B包含一种或多种选自三价稀土离子，Bi ，二价碱土金属离子和一价碱金属离子; M包括Nb和Ta中的一种或多种;其中在非取向基底上可以用Ti和Zr形成固溶体）。所得产物保持在室温至600℃之间的温度。并且在用紫外线激光等紫外线照射基板上的非晶质薄膜或由有机金属盐或醇盐构成的薄膜的同时进行结晶化。以这种方式，可以制备定向的Dion-Jacobson钙钛矿型氧化物薄膜，其特征在于薄膜可以在（001）方向上在基板上取向。

4. 发明申请

US20080035898A1 Manufacturing Method and Usage of Crystallized Metal Oxide Thin Film 有权
标题翻译：结晶金属氧化物薄膜的制造方法和用途
公开(公告)号：US20080035898A1
公开(公告)日：2008-02-14
申请号：US11836387
申请日：2007-08-09
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
IPC分类号： B05D3/06 , C01B13/00
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译：提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素，在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物同时照射波长为200nm以下的紫外线。

5. 发明授权

US5935006A Debug apparatus and method for debugging game program in ROM cartridge 失效
标题翻译：用于调试ROM盒中游戏程序的调试装置和方法
公开(公告)号：US5935006A
公开(公告)日：1999-08-10
申请号：US770570
申请日：1996-12-19
申请人： Tomohiko Nakajima
发明人： Tomohiko Nakajima
IPC分类号： G06F11/28 , G06F11/36 , A63F9/22
CPC分类号： G06F11/3648 , G06F11/3664
摘要： In a developing environment, a game program exists in a product ROM and a debug program exists in another ROM which is a test ROM. The debug program includes a time adjusting program and other debug routine programs. The game program includes some statements for the debug program. When a ROM cartridge is produced as a product ROM cartridge, the test ROM is detached from the ROM cartridge and the statements for the debug program are deleted from the game program in the product ROM. The deleted area in the product ROM is left as an unusable area. However, the deleted area is very few, because the size of the statements for debug program is much fewer than the size of the debug program. Therefore, the game program is able to use almost all product ROM area.
摘要翻译：在开发环境中，游戏程序存在于产品ROM中，并且调试程序存在于作为测试ROM的另一个ROM中。调试程序包括时间调整程序和其他调试例程程序。该游戏程序包含一些调试程序语句。当ROM盒被制造成产品ROM盒时，测试ROM与ROM盒分离，并且从产品ROM中的游戏程序中删除调试程序的语句。产品ROM中的删除区域作为不可用区域留下。但是，删除的区域很少，因为调试程序的语句大小远小于调试程序的大小。因此，游戏程序能够使用几乎所有的产品ROM区域。

6. 发明申请

US20120196150A1 RESISTOR FILM FOR BOLOMETER 有权
标题翻译：电阻膜电阻
公开(公告)号：US20120196150A1
公开(公告)日：2012-08-02
申请号：US13393556
申请日：2010-09-01
申请人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
发明人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
IPC分类号： C01G31/02 , B32B9/00 , C08J7/18 , B05D3/02 , B05D3/06
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译：提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。

7. 发明授权

US07771531B2 Manufacturing method and usage of crystallized metal oxide thin film 有权
标题翻译：结晶金属氧化物薄膜的制造方法和用途
公开(公告)号：US07771531B2
公开(公告)日：2010-08-10
申请号：US11836387
申请日：2007-08-09
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
IPC分类号： C30B11/00 , C30B21/02 , C04B35/64
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译：提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素，在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物同时照射波长为200nm以下的紫外线。

8. 发明申请

US20080044590A1 Manufacturing Method of Phosphor Film 审中-公开
标题翻译：荧光膜的制造方法
公开(公告)号：US20080044590A1
公开(公告)日：2008-02-21
申请号：US11839270
申请日：2007-08-15
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Toshiya Kumagai
IPC分类号： C08J7/18
CPC分类号： C09K11/7703 , C03C17/256 , C03C17/3417 , C03C2217/212 , C03C2217/228 , C03C2217/23 , C03C2217/242 , C03C2217/948 , C03C2218/116 , C03C2218/32
摘要： Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.
摘要翻译：提供一种能够在玻璃或硅衬底上形成结晶的与渗透相关的Ti，Zr氧化物薄膜的高性能荧光体薄膜材料的制造方法。这种荧光体薄膜的制造方法包括：形成通过添加选自由Ce，Pr，Nd，Sm，Eu，Gd，Tb等构成的组中的至少一种的有机金属薄膜或金属氧化物膜的工序， Dy，Ho，Er，Tm，Yb和Lu与由组成式ABO 3，A 2 BO 4表示的金属氧化物反应， A 3，B 2 O 7（前提是A，B，O位点可能存在缺陷），其中A是选择的元素从Ca，Sr和Ba中选出，B是在基板上选自Ti和Zr的金属元素，以及在室温下向紫外灯照射紫外线，然后在保持基板的同时照射紫外线激光的步骤 400℃以下。在结晶后，将该膜进行氧化处理。

9. 发明授权

US5816922A Game apparatus and method for debugging game program 失效
标题翻译：游戏机和游戏程序调试方法
公开(公告)号：US5816922A
公开(公告)日：1998-10-06
申请号：US770569
申请日：1996-12-19
申请人： Tomohiko Nakajima
发明人： Tomohiko Nakajima
IPC分类号： A63F13/00 , G06F11/36 , G06F11/00
CPC分类号： G06F11/3664 , G06F11/3648
摘要： In a game apparatus and a method of debugging a game program, a based time is determined, then a start time of a debugging process in a game is set. Next, the based time is compared with the start time. If the based time is bigger than the start time, the start time of the debugging process in the game must be set again. In the game apparatus and the method of the present invention, therefore, the time in the game program is not inconsistency with a contents of a game history. The game program can be debugged correctly. Further, in developing a game program, a game program debug dose not waste working-time and working-load of a developer.
摘要翻译：在游戏装置和调试游戏程序的方法中，确定基于时间的时间，然后设定游戏中的调试处理的开始时间。接下来，将基于时间与开始时间进行比较。如果基于时间大于开始时间，则必须重新设置游戏中调试过程的开始时间。因此，在本发明的游戏装置和方法中，游戏程序中的时间与游戏历史的内容不一致。游戏程序可以正确调试。此外，在开发游戏程序时，游戏程序调试不会浪费开发者的工作时间和工作负荷。

10. 发明授权

US5783143A Alloy steel resistant to molten zinc 失效
标题翻译：合金钢耐熔融锌
公开(公告)号：US5783143A
公开(公告)日：1998-07-21
申请号：US685091
申请日：1996-07-23
申请人： Takuo Handa , Tomohiko Nakajima , Kazuyoshi Arikata
发明人： Takuo Handa , Tomohiko Nakajima , Kazuyoshi Arikata
IPC分类号： C22C38/00 , C22C38/44 , C22C30/00
CPC分类号： C22C38/44 , C22C38/001
摘要： The object of the present invention is to provide an alloy steel having excellent erosion resistance to molten zinc and used as a material for parts and members for molten zinc plating facilities, e.g. sink roll, coating roll, roll frame and snout. The alloy in the present invention consists essentially of, by weight percent, about 0.10 to 0.17 wt % of carbon, from about 0.30 to 2% of silicon, from about 0.30 to about 2% manganese, from about 10% to 20% nickel, from about 20% to about 35% chromium, from about 0.50% to about 5% molybdenum and from not less than about 0.40% to about 0.75% nitrogen, the balance consisting of substantially of Fe, and unavoidable impurities. Tungsten, from about 0.5% to about 5%, may also be added to enhance the strength of the alloy.
摘要翻译：本发明的目的是提供一种对熔融锌具有优异耐侵蚀性并用作用于熔融镀锌设备的部件和部件的材料的合金钢，例如，水槽辊，涂布辊，辊框和鼻孔。本发明中的合金基本上由重量百分比计约0.10至0.17重量％的碳，约0.30至2％的硅，约0.30至约2％的锰，约10％至20％的镍，约20％至约35％的铬，约0.50％至约5％的钼和不少于约0.40％至约0.75％的氮，余量基本上由Fe和不可避免的杂质组成。还可以加入约0.5％至约5％的钨，以增强合金的强度。

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