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1. 发明授权

US5175078A Positive type photoresist developer 失效
标题翻译：正型光刻胶显影剂
公开(公告)号：US5175078A
公开(公告)日：1992-12-29
申请号：US857076
申请日：1992-03-18
申请人： Tetsuo Aoyama , Susumu Kaneko
发明人： Tetsuo Aoyama , Susumu Kaneko
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： A positive type photoresist developer which comprises an aqueous solution of quaternary ammonium hydroxide represented by the general formula; ##STR1## (wherein all the symbols are as defined in the appended claims) and hydrazine or hydrazine and a nonionic surfactant is disclosed.The developer can form a fine pattern having a high degree of resolution and can provide an excellent profile with few irregularities in pattern dimensions.
摘要翻译：一种正型光致抗蚀剂显影剂，其包含由通式表示的季铵氢氧化物的水溶液; （I）（其中所有符号如所附权利要求中所定义），并且公开了肼或肼和非离子表面活性剂。显影剂可以形成具有高分辨率的精细图案，并且可以提供优异的轮廓，在图案尺寸上具有很少的不规则性。

2. 发明申请

US20090099051A1 Aqueous fluoride compositions for cleaning semiconductor devices 审中-公开
标题翻译：氟化物组合物，用于清洁半导体器件
公开(公告)号：US20090099051A1
公开(公告)日：2009-04-16
申请号：US12173352
申请日：2008-07-15
申请人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
发明人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
IPC分类号： C11D7/32
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/263 , C11D7/28 , C11D7/3218 , C11D7/3263 , C11D7/5013 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76814
摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要翻译：本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

3. 发明授权

US07341827B2 Separation-material composition for photo-resist and manufacturing method of semiconductor device 失效
标题翻译：用于光刻胶的分离材料组合物和半导体器件的制造方法
公开(公告)号：US07341827B2
公开(公告)日：2008-03-11
申请号：US10640389
申请日：2003-08-14
申请人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Tetsuo Aoyama
发明人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Tetsuo Aoyama
IPC分类号： G03F7/26
CPC分类号： H01L21/32136 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76838
摘要： One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.
摘要翻译：根据本发明的用于光刻胶的分离材料组合物的一个实例包括5.0重量％的氨基磺酸，34.7重量％的H 2 O 3，0.3重量％的1位氢氟酸铵，30重量％的N，N-二甲基乙酰胺和30重量％的二甘醇单正丁醚。根据本发明的用于光致抗蚀剂的分离材料组合物的另一个实例包括1-羟基亚乙基-1.3.0重量％的1-二膦酸，0.12重量％的氟化铵，48.38重量％的H 2 O和48.5重量％的二甘醇单正丁基醚。用于光刻胶的分离材料组合物主要用于医用液体洗涤液/科学液体，以便在光刻胶掩模的灰化过程之后除去光致抗蚀剂残留物和副产物聚合物。可以提出用于光刻胶的分离材料组合物，使得光刻胶残留物和副产物聚合物在干蚀刻工艺之后容易除去，同时避免了低介电常数绝缘膜侵蚀和氧化。

4. 发明授权

US06875288B2 Cleaning agent and cleaning method 失效
标题翻译：清洁剂和清洁方法
公开(公告)号：US06875288B2
公开(公告)日：2005-04-05
申请号：US09971589
申请日：2001-10-09
申请人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
发明人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
IPC分类号： B08B3/08 , B08B3/00 , C11D1/00 , C11D3/32 , C11D3/34 , C11D3/43 , C11D11/00 , C11D17/08 , H01L21/02 , H01L21/304 , H01L21/311 , H01L21/461
CPC分类号： B08B3/08 , B08B3/048 , C11D3/43 , C11D11/0064 , H01L21/02063 , H01L21/31133
摘要： The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.
摘要翻译：上述清洗剂包括表面活性剂和有机溶剂，上述清洗方法的特征在于允许上述清洗剂以高速流动在待处理材料的表面上，从而清洁上述表面。根据本发明，能够容易地除去附着在待处理材料的表面上的沉积物，而不损害被处理材料。

5. 发明授权

US06458517B2 Photoresist stripping composition and process for stripping photoresist 失效
标题翻译：光刻胶剥离组合物和剥离光刻胶的方法
公开(公告)号：US06458517B2
公开(公告)日：2002-10-01
申请号：US09536643
申请日：2000-03-28
申请人： Masahiro Nohara , Yukihiko Takeuchi , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
发明人： Masahiro Nohara , Yukihiko Takeuchi , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO—(CpH2pO)q—R, wherein R is C1-C4 alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.
摘要翻译：光致抗蚀剂剥离组合物包含（1）含氮有机羟基化合物，（2）由通式HO-（CpH2pO）qR表示的亚烷基二醇单烷基醚，其中R是C 1 -C 4烷基，p是2或3，和q为1,2或3，（3）糖或糖醇，（4）含磷化合物和（5）水。光致抗蚀剂剥离组合物容易地除去无机基材上的光致抗蚀剂膜，蚀刻后剩余的图案化光致抗蚀剂膜和光致抗蚀剂残留物在短时间内不腐蚀半导体材料，电路形成材料，绝缘材料等。

6. 发明授权

US4224243A Process for producing dimethyl formamide 失效
标题翻译：二甲基甲酰胺的制备方法
公开(公告)号：US4224243A
公开(公告)日：1980-09-23
申请号：US49604
申请日：1979-06-18
申请人： Tetsuo Aoyama , Shigeru Horie , Kozo Sano , Hidetaka Kiga , Kinichi Mizuno , Takeo Ikarashi
发明人： Tetsuo Aoyama , Shigeru Horie , Kozo Sano , Hidetaka Kiga , Kinichi Mizuno , Takeo Ikarashi
IPC分类号： C07B61/00 , B01J21/00 , B01J23/00 , B01J27/00 , B01J31/00 , C07C67/00 , C07C231/00 , C07C231/08 , C07C231/10 , C07C233/00 , C07C233/03 , C07C102/00 , C07C103/36
CPC分类号： C07C231/00 , C07C233/00
摘要： Dimethyl formamide with a high purity is produced in a high yield and a high selectivity by reaction of a mixture of monomethylamine and/or monomethyl formamide and trimethylamine, or the mixture further containing dimethylamine with carbon monoxide in the presence of metallic iron or an iron compound as a catalyst and hydrogen gas at a volumic rate of H.sub.2 /CO of 0.05-3.
摘要翻译：通过一元胺和/或单甲基甲酰胺和三甲胺的混合物或进一步含有二甲胺与一氧化碳的混合物在金属铁或铁化合物的存在下反应，以高产率和高选择性产生高纯度的二甲基甲酰胺作为催化剂和H2 / CO的体积比为0.05-3的氢气。

7. 发明授权

US06462005B1 Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor device 失效
标题翻译：半导体装置用清洗剂及半导体装置的制造方法
公开(公告)号：US06462005B1
公开(公告)日：2002-10-08
申请号：US08369215
申请日：1995-01-05
申请人： Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
发明人： Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
IPC分类号： C11D162
CPC分类号： H01L21/02071 , G03F7/425 , H01L21/02052
摘要： A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.
摘要翻译：一种用于制造半导体器件的清洁剂，其包含含有季铵盐和氟化合物的水溶液，或含有季铵盐和氟化合物的水溶液，以及选自下组的有机溶剂由酰胺，内酯，腈，醇和酯组成。在半导体器件制造方法中，在用光致抗蚀剂形成掩模之后，通过干蚀刻导电层形成布线结构，其中在导电层的侧壁上形成保护沉积膜。使用清洁剂能够以高度可靠的方式去除保护性沉积膜，同时导电层的表面被净化和清洁，使得不会发生导电层的腐蚀。

8. 发明授权

US06199567B1 Method and apparatus for manufacturing semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US06199567B1
公开(公告)日：2001-03-13
申请号：US08772632
申请日：1996-12-23
申请人： Itaru Kanno , Tetsuo Aoyama , Mayumi Hada
发明人： Itaru Kanno , Tetsuo Aoyama , Mayumi Hada
IPC分类号： B08B310
CPC分类号： H01L21/02071 , B08B3/12 , H01L21/32136 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S134/902
摘要： In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.
摘要翻译：在制造包括电容器的半导体器件的方法中，使用抗蚀剂图案作为掩模对难熔金属层进行干蚀刻，从而提供由难熔金属形成的第一电极图案。使用表面活性剂的水溶液清洁第一电极图案的侧壁。通过这种方法，当通过干蚀刻法制造难熔金属的电极图案时，去除在电极图案的侧壁上形成的蚀刻残留物。

9. 发明授权

US5338462A Active carbon materials, process for the preparation thereof and the use thereof 失效
标题翻译：活性炭材料，其制备方法及其用途
公开(公告)号：US5338462A
公开(公告)日：1994-08-16
申请号：US76770
申请日：1993-06-15
申请人： Hisaki Abe , Toshio Kondoh , Hideki Fukuda , Mayumi Takahashi , Tetsuo Aoyama , Masahiro Miyake
发明人： Hisaki Abe , Toshio Kondoh , Hideki Fukuda , Mayumi Takahashi , Tetsuo Aoyama , Masahiro Miyake
IPC分类号： B01J20/20 , B01J21/18 , C01B31/08 , C02F1/70 , C02F1/72
CPC分类号： C01B31/081 , B01J20/20 , B01J21/18
摘要： The present invention relates to specific activated carbon materials including from 1 to 5% by weight of nitrogen, from 3 to 30% by weight of oxygen and from 40 to 95% by weight of carbon, and having an average pore radius of from 15 to 30 .ANG., with the proviso that mesopores occupy at least 50% by volume based on the total pore volume, and also relates a process for the preparation thereof, and to the use thereof as catalysts.
摘要翻译：本发明涉及特定的活性炭材料，其包括1至5重量％的氮，3至30重量％的氧和40至95重量％的碳，并且平均孔半径为15至 30 ANGSTROM，条件是中孔基于总孔体积占据至少50体积％，并且还涉及其制备方法及其作为催化剂的用途。

10. 发明授权

US4776929A Process for production of quaternary ammonium hydroxides 失效
标题翻译：生产季铵氢氧化物的方法
公开(公告)号：US4776929A
公开(公告)日：1988-10-11
申请号：US120150
申请日：1987-11-12
申请人： Tetsuo Aoyama , Eiji Shima , Jiro Ishikawa , Naoto Sakurai
发明人： Tetsuo Aoyama , Eiji Shima , Jiro Ishikawa , Naoto Sakurai
IPC分类号： C25B3/00 , C25C1/00
CPC分类号： C25B3/00
摘要： A process for production of high purity quarternary ammonium hydroxides, comprising electrolyzing quarternary ammonium hydrogencarbonates represented by the general formula: ##STR1## (wherein the symbols are as defined in the appended claims) in an electrolytic cell comprising an anode compartment and a cathode compartment defined by a cation exchange membrane. In accordance with this process, high purity quarternary ammonium hydroxides can be produced with high electrolytic efficiency and further without causing corrosion of equipment. Since the quarternary ammonium hydroxides produced by the present invention are of high purity, they can be effectively used as, for example, cleaners, etchants or developers for wafers in the production of IC and LSI in the field of electronics and semiconductors.
摘要翻译：一种用于生产高纯度季铵氢氧化物的方法，包括电解季节性碳酸氢铵，其由下列通式表示：其中符号如所附权利要求中所定义，其中电解池包括阳极室和阴极隔室通过阳离子交换膜。根据该方法，可以以高电解效率生产高纯度季铵氢氧化物，而且不会引起设备腐蚀。由于本发明生产的季铵氢氧化物具有高纯度，所以它们可以有效地用作例如在电子和半导体领域中用于制造IC和LSI的晶片的清洁剂，蚀刻剂或显影剂。

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