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    • 2. 发明授权
    • Process for preparing N,N'-difluorodiazoniabicycloalkane salt,
intermediate therefor
    • 制备N,N'-二氟二氮鎓双环链烷烃盐的方法,产品和产品的用途
    • US5892035A
    • 1999-04-06
    • US809932
    • 1997-05-15
    • Teruo UmemotoMasayuki NagayoshiGinjiro TomizawaKenji Adachi
    • Teruo UmemotoMasayuki NagayoshiGinjiro TomizawaKenji Adachi
    • C07D487/08C07B39/00
    • C07D487/08
    • A process for preparing a N,N'-difluorodiazoniabicycloalkane salt of the formula: ##STR1## by reacting a corresponding diazabicycloalkane or diazabicycloalkane Br.o slashed.nsted acid salt and fluorine in the presence of a Br.o slashed.nsted acid or in the presene or absence of a base, by reacting a corresponding N,N'-difluorodiazoniabicycloalkane salt and an acid or salt, by reacting a corresponding diazabicycloalkane and fluorine in the presence of a Br.o slashed.nsted acid and then reacting an intermediate product and an acid or salt, or by reacting a corresponding diazabicycloalkane Br.o slashed.nsted acid salt and fluorine in the presence or absence of a base and then reacting an intermediate product and an acid or salt.
    • PCT No.PCT / JP96 / 02183 Sec。 371日期1997年5月15日 102(e)日期1997年5月15日PCT提交1996年8月2日PCT公布。 公开号WO97 / 06170 日期1997年2月20日制备下式的N,N'-二氟二氮鎓双环烷烃盐的方法:通过在Br + 526存在下,使相应的二氮杂双环链烷烃或二氮杂双环链烷Br + 526起始酸盐与氟反应 苯甲酸或在预聚合或不存在碱的情况下,通过使相应的N,N'-二氟二氮鎓双环烷烃盐和酸或盐通过在Br + 526 nsted酸存在下使相应的二氮杂双环链烷烃和氟反应,然后使 中间产物和酸或盐,或通过在碱的存在或不存在下使相应的二氮杂双环链烷Br + 526起始酸盐和氟反应,然后使中间产物和酸或盐反应。
    • 3. 发明授权
    • Process for preparing fluorine-containing dicarbonyl compound
    • 含氟二羰基化合物的制备方法
    • US5569778A
    • 1996-10-29
    • US428133
    • 1995-04-28
    • Teruo UmemotoGinjiro Tomizawa
    • Teruo UmemotoGinjiro Tomizawa
    • C07B39/00C07C45/63C07C49/457C07C49/463C07C49/813C07C67/307C07C205/43C07C205/45C07C67/287
    • C07C205/45C07B39/00C07C205/43C07C45/63C07C49/457C07C49/463C07C49/813C07C67/307C07C2101/08C07C2101/14
    • A process for preparing a fluorine-containing dicarbonyl compound of the formula: R.sup.1 COCFR.sup.2 COR.sup.3 in which R.sup.1 is a hydrogen atom, or a substituted or unsubstituted alkyl or aryl group; R.sup.2 is a hydrogen atom, a halogen atom, or a substituted or unsubstituted alkyl or aryl group; and R.sup.3 is a hydrogen atom, or a substituted or unsubstituted alkyl, aryl, alkoxy or aryloxy group, provided that at least two of R.sup.1, R.sup.2 and R.sup.3 may together form a part of a cyclic structure with or without a hetero atom, by reacting a dicarbonyl compound of the formula: R.sup.1 COCHR.sup.2 COR.sup.3 in which R.sup.1, R.sup.2 and R.sup.3 are the same as defined above with fluorine (F.sub.2) in at least one solvent selected from the group consisting of halogenated hydrocarbons having 1 to 5 carbon atoms and nitrile compounds, or in a solvent in the presence of a salt, or an acid having pKa of 6 or less.By the above process, the fluorine-containing dicarbonyl compound is industrially prepared in a high yield.
    • PCT No.PCT / JP93 / 01584第 371日期:1995年4月28日 102(e)日期1995年4月28日PCT 1993年11月1日PCT公布。 第WO94 / 10120 PCT公开 日期:1994年5月11日制备下式的含氟二羰基化合物的方法:R1COCFR2COR3,其中R1是氢原子或取代或未取代的烷基或芳基; R2是氢原子,卤素原子或取代或未取代的烷基或芳基; 并且R 3是氢原子或取代或未取代的烷基,芳基,烷氧基或芳氧基,条件是R 1,R 2和R 3中的至少两个可以一起形成具有或不具有杂原子的环状结构的一部分, 一种下式的二羰基化合物:R1COCHR2COR3,其中R1,R2和R3与上述定义相同,在至少一种选自碳原子数为1〜5的卤代烃和腈化合物的溶剂中使用氟(F2),或 在溶剂中,在盐的存在下,或pKa为6以下的酸。 通过上述方法,可以高产率工业上制备含氟二羰基化合物。
    • 10. 发明授权
    • Cleaning gases and etching gases
    • 清洁气体和蚀刻气体
    • US06787053B2
    • 2004-09-07
    • US10129115
    • 2002-05-13
    • Akira SekiyaYuki MitsuiGinjiro TomizawaKatsuya FukaeYutaka OhiraTaisuke Yonemura
    • Akira SekiyaYuki MitsuiGinjiro TomizawaKatsuya FukaeYutaka OhiraTaisuke Yonemura
    • C03C1500
    • C23C16/4405H01L21/3065H01L21/31116Y02C20/30Y02P70/605
    • The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.
    • 本发明的第一室清洁气体和第一含硅膜蚀刻气体包含至少一种选自FCOF,CF 3 OCOF和CF 3 OCF 2 COOF的化合物,以及特定量的O 2和任选的其它气体。 第二室清洁气体和第二含硅膜蚀刻气体包含CF 3 COF,C 3 F 7 COF或CF 2(COF)2和特定量的O 2,并且任选地可以包含其它气体。 本发明的室清洁气体和含硅膜蚀刻气体具有低的全球变暖潜能,并且几乎不产生对环境有害并被认为有助于全球变暖的CF4等废气中的物质 。 因此,气体对于全球环境友好,具有易于处理和优异的废气处理性能。 此外,本发明的室清洁气体具有优异的清洗率。