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1. 发明授权

US07332628B2 Process for producing carbonyl fluoride 有权
标题翻译：生产碳酰氟的方法
公开(公告)号：US07332628B2
公开(公告)日：2008-02-19
申请号：US10548836
申请日：2004-03-12
申请人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
发明人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
IPC分类号： C07C51/58
CPC分类号： C01B32/80
摘要： The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.
摘要翻译：根据本发明的制备碳酰氟的方法是安全和容易地生产具有低四氟化碳含量的高纯度碳酰氟的方法，并且包括将一氧化碳和氟进料到反应器中并允许一氧化碳与氟反应反应器内部压力小于大气压的条件。

2. 发明授权

US07322368B2 Plasma cleaning gas and plasma cleaning method 有权
标题翻译：等离子清洗气体和等离子体清洗方法
公开(公告)号：US07322368B2
公开(公告)日：2008-01-29
申请号：US10415101
申请日：2002-08-26
申请人： Akira Sekiya , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura
发明人： Akira Sekiya , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura
IPC分类号： B08B9/093 , B08B9/00 , B08B6/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： C23C16/4405 , B08B7/0035 , H01L21/3065 , Y10S438/905
摘要： A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.
摘要翻译：用于CVD室的等离子体清洁气体是用于通过等离子体CVD装置在基板上进行成膜处理之后，清洁CVD室内壁表面上的含硅沉积物和置于CVD室内的构件表面的气体。清洁气体包括100体积％的氟气，气体可以通过放电产生等离子体。当通过放电等离子体产生100体积％的氟气，然后用作清洁气体时，即使在1000sccm的总气体流量下，也可以获得极好的蚀刻速率，并且甚至可以稳定地产生等离子体室压力为400Pa。此外，在上述条件下也可以确保清洁的均匀性。此外，氟气浓度为100％，使得该装置不复杂，因此清洁气体具有优异的实用性。

3. 发明申请

US20060194985A1 Process for producing carbonyl fluoride 有权
标题翻译：生产碳酰氟的方法
公开(公告)号：US20060194985A1
公开(公告)日：2006-08-31
申请号：US10548836
申请日：2004-03-12
申请人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
发明人： Yuki Mitsui , Taisuke Yonemura , Yutaka Ohira , Akira Sekiya
IPC分类号： C07C51/58
CPC分类号： C01B32/80
摘要： The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.
摘要翻译：根据本发明的制备碳酰氟的方法是安全和容易地生产具有低四氟化碳含量的高纯度碳酰氟的方法，并且包括将一氧化碳和氟进料到反应器中并允许一氧化碳与氟反应反应器内部压力小于大气压的条件。

4. 发明授权

US06787053B2 Cleaning gases and etching gases 有权
标题翻译：清洁气体和蚀刻气体
公开(公告)号：US06787053B2
公开(公告)日：2004-09-07
申请号：US10129115
申请日：2002-05-13
申请人： Akira Sekiya , Yuki Mitsui , Ginjiro Tomizawa , Katsuya Fukae , Yutaka Ohira , Taisuke Yonemura
发明人： Akira Sekiya , Yuki Mitsui , Ginjiro Tomizawa , Katsuya Fukae , Yutaka Ohira , Taisuke Yonemura
IPC分类号： C03C1500
CPC分类号： C23C16/4405 , H01L21/3065 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.
摘要翻译：本发明的第一室清洁气体和第一含硅膜蚀刻气体包含至少一种选自FCOF，CF 3 OCOF和CF 3 OCF 2 COOF的化合物，以及特定量的O 2和任选的其它气体。第二室清洁气体和第二含硅膜蚀刻气体包含CF 3 COF，C 3 F 7 COF或CF 2（COF）2和特定量的O 2，并且任选地可以包含其它气体。本发明的室清洁气体和含硅膜蚀刻气体具有低的全球变暖潜能，并且几乎不产生对环境有害并被认为有助于全球变暖的CF4等废气中的物质。因此，气体对于全球环境友好，具有易于处理和优异的废气处理性能。此外，本发明的室清洁气体具有优异的清洗率。

5. 发明授权

US5627290A 2,3-didehydrosialic acid substituted with fluorine at 7-position and synthetic intermediate thereof 失效
标题翻译：在7-位被氟取代的2,3-二脱氢唾液酸及其合成中间体
公开(公告)号：US5627290A
公开(公告)日：1997-05-06
申请号：US586908
申请日：1996-01-26
申请人： Takao Iida , Yutaka Ohira
发明人： Takao Iida , Yutaka Ohira
IPC分类号： C07D309/14 , C07D309/28 , C07D309/30 , C07H13/04 , C07H5/06 , C07H5/10
CPC分类号： C07H13/04 , C07D309/14 , C07D309/28 , C07D309/30
摘要： The invention pertains to 2,7-Deoxy-7-fluoro-2,3-didehydrosialic acid and an intermediate thereof which are useful for developing practical drugs, such as an antiviral agent, a preventing agent for viral diseases, etc. and for a clinical application. In addition, they are also useful as a carcinostatic agent and an immunomodulation agent.
摘要翻译： PCT No.PCT / JP95 / 00820 Sec。 371日期1996年1月26日 102（e）日期1996年1月26日PCT提交1995年4月26日PCT公布。出版物WO95 / 32955 日期1995年12月7日本发明涉及可用于开发实用药物的2,7-脱氧-7-氟-2,3-二脱氢唾液酸及其中间体，例如抗病毒剂，病毒性疾病的预防剂，等等和临床应用。此外，它们也可用作制癌剂和免疫调节剂。

6. 发明授权

US08232630B2 Contactless communication medium 有权
标题翻译：非接触式通讯介质
公开(公告)号：US08232630B2
公开(公告)日：2012-07-31
申请号：US13070447
申请日：2011-03-23
申请人： Yutaka Ohira , Chiaki Ishioka
发明人： Yutaka Ohira , Chiaki Ishioka
IPC分类号： H01L23/02
CPC分类号： B42D25/305 , B42D25/24 , B42D25/47 , B42D2033/30 , B42D2033/46 , G06K19/025 , G06K19/07728 , G06K19/07747 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00011 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005
摘要： Even when a mold part of an IC module is exposed from an opening provided in a substrate of an inlay, occurrence of malfunction, communication disorders or the like of the IC module due to the influence of an external impact or the like is prevented. By combining a sealing member including an insulating layer and an adhesive layer in a stacked manner to a shape covering a mold part of the IC module, occurrence of malfunction, communication disorders or the like of the IC module is prevented even if there is an influence of an external impact or the like. Meanwhile, by providing a sealing member, concentration of stress on the mold part in a line pressure test is alleviated by limiting the size of the sealing member, and also occurrence of cracks in the mold part can be prevented.
摘要翻译：即使当IC模块的模具部件从设置在嵌体的基板中的开口露出时，也可以防止由于外部冲击等的影响而发生故障，IC模块的通信障碍等。通过将包括绝缘层和粘合剂层的密封构件以覆盖IC模块的模具部分的形状组合，即使存在影响，也防止IC模块的故障发生，通信障碍等发生的外部影响等。同时，通过设置密封构件，通过限制密封构件的尺寸来减轻管线压力试验中的模具部件上的应力集中，并且可以防止模具部件中的裂纹的发生。

7. 发明授权

US08153756B2 Fluorine-containing monomer, fluorine-containing polymer and surface treating agent 有权
标题翻译：含氟单体，含氟聚合物和表面处理剂
公开(公告)号：US08153756B2
公开(公告)日：2012-04-10
申请号：US12236416
申请日：2008-09-23
申请人： Ikuo Yamamoto , Yutaka Ohira , Yoshio Funakoshi , Shinichi Minami , Ginjiro Tomizawa
发明人： Ikuo Yamamoto , Yutaka Ohira , Yoshio Funakoshi , Shinichi Minami , Ginjiro Tomizawa
IPC分类号： C08G73/24 , C08F214/16 , C08F214/18 , A61K31/195 , C07C61/08 , C07C229/08
CPC分类号： C07C317/18 , C07C229/30 , C07C255/23 , C07C323/12 , C08F214/18 , Y10T428/23986 , Y10T442/20 , Y10T442/2287
摘要： Disclosed is a fluorine-containing polymer having:(A) a repeating unit derived from a fluorine-containing monomer which is represented by the following formula: CH2═C(—X)—C(═O)—Y—[—(CH2)m—Z—]p—(CH2)n—Rf (I) (B) a repeating unit derived from a monomer containing no fluorine atom, and if necessary (C) a repeating unit derived from a crosslinkable monomer. This fluorine containing polymer has excellent water repellency, oil repellency and antifouling property.
摘要翻译：公开了一种含氟聚合物，其具有：（A）由下式表示的含氟单体的重复单元：CH 2 = C（-X）-C（= O）-Y - [ - （CH 2 ）m-Z-] p-（CH2）n-Rf（I）（B）衍生自不含氟原子的单体的重复单元，如果需要（C）衍生自可交联单体的重复单元。该含氟聚合物具有优异的防水性，拒油性和防污性。

8. 发明申请

US20070173148A1 Surface treating agent, fluorine-containing monomer and fluorine-containing polymer 有权
标题翻译：表面处理剂，含氟单体和含氟聚合物
公开(公告)号：US20070173148A1
公开(公告)日：2007-07-26
申请号：US10594011
申请日：2005-03-25
申请人： Ikuo Yamamoto , Yutaka Ohira , Yoshio Funakoshi , Shinichi Minami
发明人： Ikuo Yamamoto , Yutaka Ohira , Yoshio Funakoshi , Shinichi Minami
IPC分类号： B32B27/04 , C08F114/18 , C07C323/39
CPC分类号： C08F214/18 , C07C323/12 , C08F120/24 , C08F120/38 , C08F220/24 , C08F220/38 , C09D5/1668 , C09D133/16 , C09K3/18 , D06M15/277 , D06M15/295 , D06M2200/10 , D06M2200/11 , D06M2200/12 , D21H17/11 , D21H21/16 , Y10T442/2287
摘要： Disclosed is a surface treating agent containing fluorine-containing polymer having: (A) a repeating unit derived from a fluorine-containing compound which is represented by the following formula: CH2═C(—X)—C(═O)—Y—[—(CH2)m-Z-]p—(CH2)n—Rf (I) (wherein X is a hydrogen atom or a methyl group), (B) a repeating unit derived from a monomer containing no fluorine atom, if necessary and (C) a repeating unit derived from a crosslinkable monomer, if necessary. This surface treating agent has excellent water repellency, oil repellency and antifouling property.
摘要翻译：公开了含有含氟聚合物的表面处理剂，其具有：（A）由下式表示的含氟化合物的重复单元：＆lt;＆lt;直列式说明=“在线式”末端 =“铅”→CH 2 -C（-X）-C（-O）-Y - [ - （CH 2 CH 2）m

9. 发明授权

US07138364B2 Cleaning gas and etching gas 有权
标题翻译：清洁气体和蚀刻气体
公开(公告)号：US07138364B2
公开(公告)日：2006-11-21
申请号：US10480285
申请日：2003-01-28
申请人： Yutaka Ohira , Yuki Mitsui , Taisuke Yonemura , Akira Sekiya
发明人： Yutaka Ohira , Yuki Mitsui , Taisuke Yonemura , Akira Sekiya
IPC分类号： B08B9/00
CPC分类号： H01L21/02019 , B08B7/00 , C09K13/00 , C09K13/08 , C23C16/4405 , H01L21/02046 , H01L21/30604 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.
摘要翻译：根据本发明的用于含硅膜的室清洁气体和蚀刻气体包含与碳原子醚连接的具有2至4个碳原子的全氟环醚。室清洁气体和蚀刻气体几乎不产生诸如CF 4的有害废气，这是全球变暖的原因之一，因此它们对环境有好处。另外，它们是无毒气体或挥发性液体，易于使用，废气处理性优异。此外，本发明的室清洁气体具有优良的清洗率。

10. 发明授权

US6084081A Lewis X derivatives 失效
标题翻译：路易斯X衍生物
公开(公告)号：US6084081A
公开(公告)日：2000-07-04
申请号：US254670
申请日：1999-05-06
申请人： Yutaka Ohira , Takao Iida
发明人： Yutaka Ohira , Takao Iida
IPC分类号： C07H5/02 , C07H15/04 , C07H19/044 , C07H15/00 , C07H17/00
CPC分类号： C07H5/02 , C07H15/04 , C07H19/044 , Y02P20/55
摘要： A novel fluorine-containing Lewis X derivative represented by the following formula (I): ##STR1## wherein R represents hydrogen, a hydroxyl-protective group, --PO(OH).sub.2, --SO.sub.3 H or sialylate;R.sup.1 represents hydrogen, hydroxyl, aliphatic acyloxy, aromatic acyloxy, lower alkylthio, optionally substituted phenylthio, lower alkoxy, branched long chain alkoxy, optionally substituted phenylmethoxy or sphingosinyl, R.sup.10 represents hydrogen or --O--C--(.dbd.NH)CCl.sub.3 ; provided that when R.sup.10 is --O--C--(.dbd.NH)CCl.sub.3, R.sup.9 is hydrogen;R.sup.2 and R.sup.3 are the same or different and independently represent hydrogen, aliphatic acyl, aromatic acyl or optionally substituted phenylmethyl; andR.sup.4 represents hydroxyl, aliphatic acyloxy, aromatic acyloxy, aliphatic acylamino or aromatic acylamino.
摘要翻译： PCT No.PCT / JP97 / 03247 Sec。 371日期1999年5月6日 102（e）日期1999年5月6日PCT提交1997年9月12日PCT公布。公开号WO98 / 11118 日期：1998年3月19日由下式（I）表示的新型含氟Lewis X衍生物：其中R表示氢，羟基保护基，-PO（OH）2，-SO 3 H或唾液酸酯; R1代表氢，羟基，脂族酰氧基，芳香酰氧基，低级烷硫基，任选取代的苯硫基，低级烷氧基，支链长链烷氧基，任选取代的苯基甲氧基或鞘氨醇基，R10代表氢或-O-C-（= NH）CCl3; 条件是当R 10为-O-C - （= NH）CCl 3时，R 9为氢; R2和R3相同或不同并且独立地表示氢，脂族酰基，芳族酰基或任选取代的苯基甲基; 并且R 4表示羟基，脂族酰氧基，芳香族酰氧基，脂肪族酰基氨基或芳香族酰氨基。

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