会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Process for deposition of sputtered shape memory alloy films
    • 溅射形状记忆合金膜沉积工艺
    • US06454913B1
    • 2002-09-24
    • US09904072
    • 2001-07-12
    • Gregory K. RasmussenFenglian ChangTerry J. GoldMaryann G. SeibertJinping Zhang
    • Gregory K. RasmussenFenglian ChangTerry J. GoldMaryann G. SeibertJinping Zhang
    • C23C1434
    • C22C27/00C22C30/00C22F1/006C23C14/165C23C14/3414
    • A process is provided for forming a thin film deposit of a Ni—Ti—Hf ternary shape memory alloy on a substrate by magnetron sputtering deposition having high transformation temperatures and good shape-memory and mechanical properties. The method of forming a thin film deposit of a ternary shape memory alloy on a substrate by sputtering deposition comprises arranging a Ni—Ti—Hf target and a substrate within a deposition chamber, maintaining a working distance from the target to the substrate of about 83 mm to 95 mm; heating the substrate to a temperature high enough to induce in-situ crystallization; introducing a krypton working gas into the deposition chamber; applying appropriate level of deposition power so that the deposition rate is from about 6 Å per second to about 120 Å per second; and, depositing a Ni—Ti—Hf shape memory alloy film having a composition ranging from about Ni48(TiHf)52 to Ni50(TiHf)50.
    • 提供了一种通过具有高转变温度和良好形状记忆和机械性能的磁控溅射沉积在基底上形成Ni-Ti-Hf三元形状记忆合金薄膜沉积的方法。 通过溅射沉积在衬底上形成三元形状记忆合金的薄膜沉积的方法包括在沉积室内布置Ni-Ti-Hf靶和衬底,保持从靶到衬底的工作距离约为83 毫米至95毫米; 将基底加热到足够高的温度以引起原位结晶; 将氪工作气体引入沉积室; 施加适当水平的沉积功率,使得沉积速率为每秒约6埃至约120埃; 并且沉积具有约Ni48(TiHf)52至Ni50(TiHf)50的组成的Ni-Ti-Hf形状记忆合金膜。