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1. 发明授权

US06734091B2 Electrode for p-type gallium nitride-based semiconductors 失效
标题翻译： p型氮化镓基半导体电极
公开(公告)号：US06734091B2
公开(公告)日：2004-05-11
申请号：US10187465
申请日：2002-06-28
申请人： Tchang-Hun Oh , Hong K. Choi , Bor-Yeu Tsaur , John C. C. Fan , Shirong Liao , Jagdish Narayan
发明人： Tchang-Hun Oh , Hong K. Choi , Bor-Yeu Tsaur , John C. C. Fan , Shirong Liao , Jagdish Narayan
IPC分类号： H01L2128
CPC分类号： H01L33/42 , H01L21/28575 , H01L33/32
摘要： An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.
摘要翻译：公开了一种用于p型氮化镓基半导体材料的改进的电极，其包括氧化金属层和金属材料的第一和第二层。电极通过在p型半导体层上沉积三个或更多个金属层而形成，使得至少一个金属层与p型半导体层接触。然后至少两个金属层在氧的存在下进行退火处理以氧化至少一个金属层以形成金属氧化物。电极为p型氮化镓基半导体材料提供良好的欧姆接触，从而降低氮化镓基半导体器件的工作电压。

2. 发明授权

US07002180B2 Bonding pad for gallium nitride-based light-emitting device 失效
标题翻译：用于氮化镓基发光器件的接合焊盘
公开(公告)号：US07002180B2
公开(公告)日：2006-02-21
申请号：US10187468
申请日：2002-06-28
申请人： Steve Tchang-Hun Oh , Hong K. Choi , Bor-Yeu Tsaur , John C. C. Fan
发明人： Steve Tchang-Hun Oh , Hong K. Choi , Bor-Yeu Tsaur , John C. C. Fan
IPC分类号： H01L27/15
CPC分类号： H01L33/40
摘要： A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.
摘要翻译：用于电极的焊盘与包括铝的p型氮化镓基半导体材料接触。接合焊盘还可以包括一种或多种选自钯，铂，镍和金的金属。接合焊盘可以用于在诸如发光二极管或激光二极管的半导体器件中的p电极上附接接合线，而不会导致电极的光透射和欧姆特性的劣化。接合焊盘可以与与n型氮化镓基半导体材料（n电极）欧姆接触的与电极基本相同的材料形成。这允许在制造基本上降低制造器件的成本的氮化镓基发光器件时同时形成焊盘和n电极。

3. 发明授权

US07122841B2 Bonding pad for gallium nitride-based light-emitting devices 失效
标题翻译：用于氮化镓基发光器件的接合焊盘
公开(公告)号：US07122841B2
公开(公告)日：2006-10-17
申请号：US10860798
申请日：2004-06-03
申请人： Tchang-Hun Oh , Hong K. Choi , John C. C. Fan , Jagdish Narayan
发明人： Tchang-Hun Oh , Hong K. Choi , John C. C. Fan , Jagdish Narayan
IPC分类号： H01L27/15
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/32 , H01L33/40
摘要： A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode. The n-side bonding pad typically is formed on the n-type semiconductor layer, and forms a good ohmic contact with the n-type semiconductor layer.
摘要翻译：半导体器件包括具有第一主表面的衬底; 在所述衬底的第一表面上的半导体器件结构，所述器件结构包括n型半导体层和在所述n型半导体层上的p型半导体层; 具有第一表面和第二表面的p侧电极，其中所述第一表面与所述p型半导体层电接触; 以及p侧电极上的p侧接合焊盘。优选地，半导体器件还包括在n型半导体层上的n侧焊盘。 p侧和n侧接合焊盘各自独立地包括作为其顶层的金层和在顶部金层下方的单层或多层扩散阻挡层。任选地，在扩散阻挡层下方还包括一个或多个金属层。通常，p侧焊盘形成在p侧电极上。 n型接合焊盘通常形成在n型半导体层上，与n型半导体层形成良好的欧姆接触。

4. 发明授权

US06847052B2 Light-emitting diode device geometry 失效
标题翻译：发光二极管器件几何
公开(公告)号：US06847052B2
公开(公告)日：2005-01-25
申请号：US10463219
申请日：2003-06-17
申请人： John C. C. Fan , Hong K. Choi , Tchang-Hun Oh , Jyh Chia Chen , Jagdish Narayan
发明人： John C. C. Fan , Hong K. Choi , Tchang-Hun Oh , Jyh Chia Chen , Jagdish Narayan
IPC分类号： H01L21/285 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/42 , H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32 , H01L33/38 , H01L2933/0016 , Y10S257/918
摘要： A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.
摘要翻译：半导体器件包括：衬底; 在该衬底上的n型半导体层，该n型半导体层具有平坦的顶表面; p型半导体层，其延伸在n型半导体层的主要部分上，并且不延伸在邻近n型半导体的平面顶表面的至少一个边缘的n型半导体层的暴露区域上层; 设置在所述n型半导体层的所述露出区域上的第一焊盘; 在p型半导体层上延伸的电极层; 以及在所述电极层上的第二焊盘，所述焊盘包括用于固定电互连的中心区域和从所述中心区域突出的至少一个指状区域，所述指状区域具有远离所述中心部分的长度区域和宽度明显小于长度。还描述了一种半导体器件的制造方法。

5. 发明授权

US06479313B1 Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes 失效
标题翻译：制造GaN基p型化合物半导体和发光二极管的方法
公开(公告)号：US06479313B1
公开(公告)日：2002-11-12
申请号：US09866442
申请日：2001-05-25
申请人： Jinlin Ye , Jyh-Chia Chen , Shirong Liao , Hong K. Choi , John C. C. Fan
发明人： Jinlin Ye , Jyh-Chia Chen , Shirong Liao , Hong K. Choi , John C. C. Fan
IPC分类号： H01L2100
CPC分类号： H01L33/325 , H01L21/2683 , H01L21/3245 , H01L33/0095
摘要： Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.
摘要翻译：用x射线辐射照射化合物半导体材料以活化掺杂剂材料。主动载流子浓度效率可以通过已知方法，包括常规热退火来改善。该方法可用于掺杂p型材料的III-V族化合物，包括GaN基半导体，以形成低电阻率p-GaN。该方法可以进一步用于制造具有改进的正偏压和发光效率的GaN基LED（包括蓝色LED）。

6. 发明授权

US06881983B2 Efficient light emitting diodes and lasers 有权
公开(公告)号：US06881983B2
公开(公告)日：2005-04-19
申请号：US10207649
申请日：2002-07-26
申请人： Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chia Chen , Hong K. Choi , John C. C. Fan
发明人： Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chia Chen , Hong K. Choi , John C. C. Fan
IPC分类号： H01L33/06 , H01L33/32 , H01S5/10 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/106 , H01S5/3425 , H01S5/34333
摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

7. 发明授权

US06909419B2 Portable microdisplay system 失效
标题翻译：便携式微显示系统
公开(公告)号：US06909419B2
公开(公告)日：2005-06-21
申请号：US09153744
申请日：1998-09-15
申请人： Matthew Zavracky , Jeffrey Jacobsen , Frederick P. Herrmann , Wen-Foo Chern , Hiap L. Ong , John C. C. Fan , Bor-Yeu Tsaur , Alan Richard , Ron Gale , Jason Lo , Stephen A. Pombo , Rodney Bumgardner
发明人： Matthew Zavracky , Jeffrey Jacobsen , Frederick P. Herrmann , Wen-Foo Chern , Hiap L. Ong , John C. C. Fan , Bor-Yeu Tsaur , Alan Richard , Ron Gale , Jason Lo , Stephen A. Pombo , Rodney Bumgardner
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1368 , G06F1/16 , G06F3/14 , G09G3/20 , G09G3/34 , G09G3/36 , H04N9/30
CPC分类号： H04N9/30 , G06F1/1616 , G06F1/1626 , G06F1/163 , G06F1/1632 , G06F1/1637 , G06F1/1656 , G06F1/1662 , G06F1/1686 , G06F1/1698 , G09G3/3406 , G09G3/3413 , G09G3/3659 , G09G2310/0235 , G09G2310/024 , G09G2310/08 , G09G2320/041 , G09G2320/0633 , G09G2320/064 , G09G2330/021
摘要： An active matrix color crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix display is located in a portable microdisplay system that has a display computer that generates images to be displayed on the liquid crystal display and connected to the active matrix liquid crystal display. A data link transmits data at a rate of speed of greater than 200 Mbytes per second in series for at least a portion between the display computer and the active matrix liquid crystal display. In a preferred embodiment, the display system has a randomizing device that alternates the amplifier through which an analog video signal passes.
摘要翻译：有源矩阵彩色晶体显示器具有有源矩阵电路，反电极面板和插入的液晶层。有源矩阵显示器位于便携式微显示系统中，该系统具有产生要显示在液晶显示器上并连接到有源矩阵液晶显示器的图像的显示计算机。数据链路以显示计算机和有源矩阵液晶显示器之间的至少一部分串联发送速度大于每秒200兆字节的速率的数据。在优选实施例中，显示系统具有随机化装置，其交替模拟视频信号通过的放大器。

8. 发明授权

US06552704B2 Color display with thin gap liquid crystal 失效
标题翻译：彩色显示薄间隙液晶
公开(公告)号：US06552704B2
公开(公告)日：2003-04-22
申请号：US08961744
申请日：1997-10-31
申请人： Matthew Zavracky , Wen-Foo Chern , Hiap L. Ong , John C. C. Fan , Bor-Yeu Tsaur , Alan Richard
发明人： Matthew Zavracky , Wen-Foo Chern , Hiap L. Ong , John C. C. Fan , Bor-Yeu Tsaur , Alan Richard
IPC分类号： G09G336
CPC分类号： G09G3/3413 , G06F1/1626 , G06F1/163 , G06F3/14 , G09G3/3659 , G09G2310/0235 , G09G2310/024 , G09G2310/08 , G09G2320/041 , G09G2330/021 , H04N9/30
摘要： An active matrix color sequential liquid crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix circuit has an array of transistor circuits formed in a first plane. Each transistor circuit is connected to a pixel electrode in an array of pixel electrodes having a small area. The counterelectrode panel extends in a second plane that is parallel to the first plane, such that the counterelectrode panel receives an applied voltage. The liquid crystal layer is interposed in a cavity between the two planes. In a preferred embodiment, an oxide layer extends over the pixel electrode array. The oxide can have a first thickness in a peripheral region around the array of the pixel electrodes and a thinner second thickness in a pixel electrode region extending over the array of pixel electrodes.
摘要翻译：有源矩阵色彩顺序液晶显示器具有有源矩阵电路，反电极面板和插入的液晶层。有源矩阵电路具有形成在第一平面中的晶体管电路的阵列。每个晶体管电路连接到具有小面积的像素电极阵列中的像素电极。反电极板在与第一平面平行的第二平面中延伸，使得反电极板接收施加的电压。液晶层插入在两个平面之间的空腔中。在优选实施例中，氧化物层在像素电极阵列上延伸。氧化物可以在像素电极的阵列周围的周边区域中具有第一厚度，并且在像素电极阵列上延伸的像素电极区域中具有更薄的第二厚度。

9. 发明授权

US4670088A Lateral epitaxial growth by seeded solidification 失效
标题翻译：通过种子凝固进行外侧外延生长
公开(公告)号：US4670088A
公开(公告)日：1987-06-02
申请号：US828601
申请日：1986-02-11
申请人： Bor-Yeu Tsaur , John C. C. Fan , Michael W. Geis
发明人： Bor-Yeu Tsaur , John C. C. Fan , Michael W. Geis
IPC分类号： C30B13/00 , C30B13/06 , C30B27/00 , H01L21/20 , H01L21/324 , C30B19/00
CPC分类号： H01L21/324 , C30B13/00 , C30B13/06 , C30B27/00 , C30B29/60 , H01L21/2022 , Y10S148/134
摘要： An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.
摘要翻译：公开了一种用于结晶非晶或多晶材料的改进方法和装置。在本发明中，将要结晶的材料形成在基底上，并且将单晶种子材料设置成接触和/或邻近或与要结晶的材料的至少一部分接触。然后在要结晶的材料上形成用作“润湿剂”的材料层。对由此形成的结构进行热处理，该热处理熔化正在结晶的材料，并且当材料固化其晶体结构基于种子材料基本上是外延的。 “润湿剂”层用于防止在结晶过程中材料的有害的滚珠。

10. 发明授权

US06476784B2 Portable display system with memory card reader 失效
标题翻译：带存储卡读卡器的便携式显示系统
公开(公告)号：US06476784B2
公开(公告)日：2002-11-05
申请号：US09004706
申请日：1998-01-08
申请人： Matthew Zavracky , Jeffrey Jacobsen , Frederick P. Herrmann , Wen-Foo Chern , Hiap L. Ong , John C. C. Fan , Bor-Yeu Tsaur , Alan Richard
发明人： Matthew Zavracky , Jeffrey Jacobsen , Frederick P. Herrmann , Wen-Foo Chern , Hiap L. Ong , John C. C. Fan , Bor-Yeu Tsaur , Alan Richard
IPC分类号： G09G336
CPC分类号： G06F1/163 , G06F1/1626 , G06F3/14 , G09G3/3413 , G09G3/3659 , G09G2310/0235 , G09G2310/024 , G09G2310/08 , G09G2320/041 , G09G2330/021 , H04N9/30
摘要： An active matrix color sequential liquid crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix circuit has an array of transistor circuits formed in a first plane. Each transistor circuit is connected to a pixel electrode in an array of pixel electrodes having a small area. The display is housed in a portable display device having a docking port for a memory card used to input video data for the display.
摘要翻译：有源矩阵色彩顺序液晶显示器具有有源矩阵电路，反电极面板和插入的液晶层。有源矩阵电路具有形成在第一平面中的晶体管电路的阵列。每个晶体管电路连接到具有小面积的像素电极阵列中的像素电极。显示器容纳在具有用于输入用于显示器的视频数据的存储卡的对接端口的便携式显示设备中。

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