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1. 发明授权

US09257273B2 Charged particle beam apparatus, thin film forming method, defect correction method and device forming method 有权
标题翻译：带电粒子束装置，薄膜形成方法，缺陷校正方法和器件形成方法
公开(公告)号：US09257273B2
公开(公告)日：2016-02-09
申请号：US13876274
申请日：2011-09-22
申请人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： H01L21/31 , H01L21/02 , H01J37/317 , C23C16/04 , C23C16/24 , C23C16/32 , C23C16/40 , C23C16/42 , C23C16/48 , C23C16/56 , H01L21/66 , H01L21/28 , H01L29/66
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
摘要翻译：提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

2. 发明申请

US20130224889A1 CHARGED PARTICLE BEAM APPARATUS, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FORMING METHOD 有权
标题翻译：充电颗粒光束装置，薄膜形成方法，缺陷校正方法和装置形成方法
公开(公告)号：US20130224889A1
公开(公告)日：2013-08-29
申请号：US13876274
申请日：2011-09-22
申请人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： H01L21/02
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
摘要翻译：提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

3. 发明申请

US20100219339A1 FOCUSED ION BEAM APPARATUS 有权
标题翻译：聚焦离子束设备
公开(公告)号：US20100219339A1
公开(公告)日：2010-09-02
申请号：US12712863
申请日：2010-02-25
申请人： Takashi Ogawa , Kenichi Nishinaka , Yoshihiro Koyama
发明人： Takashi Ogawa , Kenichi Nishinaka , Yoshihiro Koyama
IPC分类号： G01N23/225 , H01J3/14
CPC分类号： H01J37/08 , H01J37/28 , H01J2237/0807 , H01J2237/31749
摘要： The crystal structure of the emitter can be accurately grasped from a FIM image without being influenced by disturbances, such as contamination, and even if the rearrangement of atoms has been performed, whether or not the crystal structure of the emitter has returned to the original state can also be accurately determined. There is a provided a focused ion beam apparatus including an emitter 10, a gas source 11 which supplies gas G2, a cooling unit 12 which cools the emitter, a heating unit 13 which heats the tip of the emitter, an extraction power source unit 15 which applies an extraction voltage to ionize the gas into gas ions at the tip of the emitter, and then extract the gas ions, a beam optical system 16 which makes the extracted gas ions into a focused ion beam (FIB), and then radiates the focused ion beam onto a sample S, an image acquiring mechanism 17 which acquires a FIM image of the tip of the emitter, and a control unit 7 having a display unit and a storage unit 7b. A guide which displays an ideal crystal structure of the tip of the emitter is stored in advance in the storage unit. The control unit is enabled to display the guide in the state of overlapping the acquired FIM image on the display unit.
摘要翻译：可以从FIM图像中精确地掌握发射体的晶体结构，而不受诸如污染等干扰的影响，即使原子的重排已经被执行，发射体的晶体结构是否已经恢复到初始状态也可以准确确定。提供了一种聚焦离子束装置，其包括发射极10，供应气体G2的气体源11，冷却发射极的冷却单元12，加热发射极顶端的加热单元13，提取电源单元15 其施加提取电压以将气体离子化为发射体顶端的气体离子，然后提取气体离子，使得提取的气体离子成为聚焦离子束（FIB）的束光学系统16，然后辐射聚焦离子束到样本S上，获取发射器的尖端的FIM图像的图像获取机构17以及具有显示单元和存储单元7b的控制单元7。将显示发射器顶端的理想晶体结构的引导件预先存储在存储单元中。控制单元能够在显示单元上与获取的FIM图像重叠的状态下显示引导件。

4. 发明申请

US20100214346A1 INK-JET RECORDING APPARATUS 有权
标题翻译：喷墨记录仪
公开(公告)号：US20100214346A1
公开(公告)日：2010-08-26
申请号：US12712115
申请日：2010-02-24
申请人： Yutaka Hokazono , Yoshihiro Koyama , Norio Sasaki , Shinji Toyoshima , Yukimichi Kimura , Toshiaki Yamaguchi
发明人： Yutaka Hokazono , Yoshihiro Koyama , Norio Sasaki , Shinji Toyoshima , Yukimichi Kimura , Toshiaki Yamaguchi
IPC分类号： B41J29/393 , B41J2/165
CPC分类号： B41J27/00 , B41J2/1652 , B41J2/16535 , B41J2/17509 , B41J11/0065 , B41J11/0085 , B41J11/06 , B41J29/38
摘要： An ink-jet recording apparatus includes a platen provided with a suction-collection section which sucks in and collects ink discharged deviating from an end portion of recording medium. The ink-jet recording apparatus includes a suction force generation unit for collecting ink configured to enable the suction collection section to generate a suction force, a collection flow path connecting the suction collection section to the suction force generation unit for collection, and a flow path control unit configured to vary an sectional area of the collection flow path. The sectional area of the collection flow path is varied according to an image forming time or a type of the recording medium.
摘要翻译：一种喷墨记录装置，包括设置有抽吸收集部分的压板，该吸引收集部分吸收和收集从记录介质的端部偏离的墨水。喷墨记录装置包括一个用于收集墨水的抽吸力产生单元，该墨水被构造成能够使吸力收集部分产生吸力，将抽吸收集部分连接到吸收力产生单元用于收集的收集流路，控制单元被配置为改变收集流动路径的截面面积。收集流路的截面积根据图像形成时间或记录介质的类型而变化。

5. 发明授权

US6118122A Ion beam working apparatus 失效
标题翻译：离子束加工装置
公开(公告)号：US6118122A
公开(公告)日：2000-09-12
申请号：US922892
申请日：1997-09-03
申请人： Yoshihiro Koyama , Yasuhiko Sugiyama
发明人： Yoshihiro Koyama , Yasuhiko Sugiyama
IPC分类号： B21C51/00 , C23F4/00 , G01B11/02 , G01Q60/44 , H01J37/09 , H01J37/141 , H01J37/153 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/305 , H01J37/28
CPC分类号： H01J37/304 , H01J37/3023 , H01J37/3056 , H01J2237/0458 , H01J2237/30461
摘要： An ion beam working apparatus which can carry out a plurality of workings with good accuracy automatically is provided. When an ion beam current is changed, by setting differences in ion beam optical conditions, working without focal point shift or working position shift becomes possible and throughput increases can be expected. Differences in ion beam optical conditions of when an ion beam current is changed are stored in a computer and when the ion beam current amount is changed midway through automatic working those stored differences in ion beam optical conditions are set in the ion beam optical system.
摘要翻译：提供一种可以自动执行高精度的多种工作的离子束加工装置。当离子束电流改变时，通过设置离子束光学条件的差异，可以预期没有焦点位移或工作位置偏移的工作，并且可以预期吞吐量增加。将离子束电流变化时的离子束光学条件的差异存储在计算机中，并且当离子束电流量通过自动工作中途改变时，离子束光学条件中的这些存储的差异被设定在离子束光学系统中。

6. 发明授权

US5200769A Image forming apparatus provided with shifting means for the toner feed means 失效
标题翻译：图像形成装置用于转印装置用于投影机进纸装置
公开(公告)号：US5200769A
公开(公告)日：1993-04-06
申请号：US796755
申请日：1991-11-25
申请人： Osamu Takemura , Yoshihiro Koyama
发明人： Osamu Takemura , Yoshihiro Koyama
IPC分类号： B41J2/385 , B41J2/415 , G03G15/05 , G03G15/34 , G03G17/00
CPC分类号： G03G15/346 , B41J2/4155 , G03G2217/0025
摘要： An image forming apparatus comprising a pair of electrodes disposed on the opposite surfaces of a substrate having a plurality of toner passages in such a manner that an electric field can be formed inside each of the toner passages so as to allow charged toner to pass therethrough. The charged toner is fed on one electrode by means of a toner feed member. The toner feed member is moved away from the toner passages by means of a shifting member when an image forming operation is not performed.

7. 发明授权

US4746857A Probing apparatus for measuring electrical characteristics of semiconductor device formed on wafer 失效
标题翻译：用于测量在晶片上形成的半导体器件的电特性的探测装置
公开(公告)号：US4746857A
公开(公告)日：1988-05-24
申请号：US903021
申请日：1986-09-02
申请人： Takamasa Sakai , Motohiro Kono , Takayuki Umaba , Yoshiyuki Nakagawa , Yoshihiro Koyama
发明人： Takamasa Sakai , Motohiro Kono , Takayuki Umaba , Yoshiyuki Nakagawa , Yoshihiro Koyama
IPC分类号： G01R1/067 , G01R31/28 , G01R31/02 , G01R1/06
CPC分类号： G01R1/06705 , G01R31/2831
摘要： A probing apparatus is used to measure electrical characteristics of a semiconductor device formed on a wafer. The apparatus includes means for holding the wafer in a vertical or slightly leaned position on a frame, a contact needle, three-directional drive means for holding the needle on the frame movably both vertically and horizontally along the device-bearing surface of the wafer and for bringing the needle into releasable contact with a desired portion of the device-bearing surface of the wafer, and a microscope provided in such a way that the tip of the needle is seen substantially at the center of the field of view, said microscope being movable together with the needle along the device-bearing surface of the wafer.
摘要翻译：探测装置用于测量形成在晶片上的半导体器件的电特性。该装置包括用于将晶片保持在框架上的垂直或稍微倾斜的位置的装置，接触针，三向驱动装置，用于沿着晶片的装置承载表面垂直和水平地可移动地将针保持在框架上; 用于使针与晶片的装置承载表面的期望部分可释放地接触，以及以使得针的尖端基本上被视为视野中心的方式设置的显微镜，所述显微镜是可以沿着晶片的装置承载表面与针一起移动。

8. 发明授权

US08822945B2 Focused ion beam apparatus 有权
标题翻译：聚焦离子束装置
公开(公告)号：US08822945B2
公开(公告)日：2014-09-02
申请号：US13065698
申请日：2011-03-28
申请人： Kenichi Nishinaka , Takashi Ogawa , Yoshihiro Koyama
发明人： Kenichi Nishinaka , Takashi Ogawa , Yoshihiro Koyama
IPC分类号： G01N23/225 , H01J49/42 , H01J3/26
CPC分类号： H01J37/08 , H01J37/265 , H01J2237/006 , H01J2237/0807 , H01J2237/0827
摘要： A focused ion beam apparatus includes a gas field ion gun unit having an emitter, an ion source gas supply unit for supplying different ion source gases to the emitter, a heater for heating the emitter, and an extraction electrode. A storage section stores, for each gas of a plurality of different types, set values of emitter temperature, gas pressure, extraction voltage to be applied to an extraction electrode, image contrast and image brightness. An input section selects and inputs one of the gas types. A control section reads, from the storage section, the set values of emitter temperature, gas pressure, extraction voltage, image contrast and image brightness, which correspond to the input gas type, and sets a heater, a gas control section, a voltage control section, and an adjustment section for the contrast and brightness of the image.
摘要翻译：聚焦离子束装置包括具有发射极的气体场离子枪单元，用于向发射极供给不同离子源气体的离子源气体供给单元，用于加热发射极的加热器和提取电极。对于多种不同类型的每种气体，存储部分存储要施加到提取电极的发射体温度，气体压力，提取电压的设定值，图像对比度和图像亮度。输入部分选择并输入气体类型之一。控制部从存储部读取与输入气体类型相对应的发射极温度，气体压力，提取电压，图像对比度和图像亮度的设定值，并且设定加热器，气体控制部，电压控制部分和用于图像的对比度和亮度的调整部分。

9. 发明授权

US06891171B1 Method for repairing a phase shift mask and a focused ion beam apparatus for carrying out method 失效
标题翻译：用于修复相移掩模的方法和用于执行方法的聚焦离子束装置
公开(公告)号：US06891171B1
公开(公告)日：2005-05-10
申请号：US09959834
申请日：2000-04-19
申请人： Ryoji Hagiwara , Yoshihiro Koyama
发明人： Ryoji Hagiwara , Yoshihiro Koyama
IPC分类号： G01Q60/00 , G03F1/00 , H01J37/305
CPC分类号： G03F1/74 , G03F1/26 , H01J37/3056 , H01J2237/31744
摘要： A method is provided for repairing a phase shift mask. The phase shift mask has a substrate and a shifter containing a defect and disposed on the substrate. An ion beam is irradiated onto the defect while a region of the shifter that includes the defect is supplied with a first gas containing silicon, an oxidizing second gas, and a third gas for controlling an amount of ions from the ion beam which penetrate the region of the shifter to form a silicon thin film on the defect and thereby repair the phase shift mask.
摘要翻译：提供了修复相移掩模的方法。相移掩模具有衬底和包含缺陷并设置在衬底上的移位器。将离子束照射到缺陷上，同时向包含缺陷的移位器的区域提供含有硅的第一气体，氧化性第二气体和用于控制穿透该区域的离子束的离子量的第三气体的移位器，以在缺陷上形成硅薄膜，从而修复相移掩模。

10. 发明授权

US06348689B1 Focused ion beam apparatus 有权
标题翻译：聚焦离子束装置
公开(公告)号：US06348689B1
公开(公告)日：2002-02-19
申请号：US09310767
申请日：1999-05-13
申请人： Yoshihiro Koyama
发明人： Yoshihiro Koyama
IPC分类号： H01J3730
CPC分类号： H01J37/3002 , H01J2237/3174
摘要： A charged particle beam apparatus has a heater for heating an internal component to a sufficient temperature to prevent solidification of particles thereon and to thus improve the reliability of the apparatus. In a preferred embodiment, the apparatus is a focused ion beam apparatus having an ion source and a focusing optical system contained in a housing. A scanning electrode contained in the housing scans the focused ion beam across a desired region of a sample surface. The heater maintains the temperature of the focusing optical system at a sufficient temperature to prevent a gas contained in the housing from solidifying in the heated internal component. A secondary charged particle detector detects secondary charged particles generated in response to the ion beam irradiation and outputs a corresponding signal, and a display unit displays an image of the sample surface based on the output signal of the secondary charged particle detector. A gas injection gun blows a gas toward the sample surface. The gas may be an etch-assist gas which cooperates with the focused ion beam to etch the region of the sample surface irradiated by the focused ion beam, or a deposition-assist gas which cooperates with the focused ion beam to deposit a film on the region of the sample surface irradiated by the focused ion beam.
摘要翻译：带电粒子束装置具有用于将内部部件加热至足够温度以防止其上的颗粒固化的加热器，从而提高装置的可靠性。在优选实施例中，该装置是聚焦离子束装置，其具有包含在壳体中的离子源和聚焦光学系统。包含在壳体中的扫描电极扫描聚焦离子束穿过样品表面的期望区域。加热器将聚焦光学系统的温度保持在足够的温度，以防止包含在壳体中的气体在加热的内部部件中固化。次级带电粒子检测器检测响应于离子束照射产生的二次带电粒子并输出相应的信号，并且显示单元基于二次带电粒子检测器的输出信号显示样品表面的图像。注气枪将气体吹向样品表面。气体可以是蚀刻辅助气体，其与聚焦离子束配合以蚀刻由聚焦离子束照射的样品表面的区域，或者与聚焦离子束配合的沉积辅助气体以将膜沉积在由聚焦离子束照射的样品表面的区域。

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