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1. 发明申请

US20070231738A1 Resist composition and patterning process using the same 有权
标题翻译：抗蚀剂组成和图案化工艺使用相同
公开(公告)号：US20070231738A1
公开(公告)日：2007-10-04
申请号：US11730289
申请日：2007-03-30
申请人： Tatsushi Kaneko , Jun Hatakeyama , Yuji Harada
发明人： Tatsushi Kaneko , Jun Hatakeyama , Yuji Harada
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： There is disclosed a resist composition comprising, at least, a polymer including repeating units represented by the following general formula (1). There can-be provided a resist composition that has a good barrier property against water, prevents resist components from leaching to water, has high receding contact angle against water, does not require a protective film, has an excellent process applicability, suitable for the liquid immersion lithography and makes it possible to form micropatterns with high precision.
摘要翻译：公开了一种抗蚀剂组合物，其至少包含由以下通式（1）表示的重复单元的聚合物。可以提供对水具有良好的阻隔性的抗蚀剂组合物，防止抗蚀剂成分浸出到水中，对水具有高后退接触角，不需要保护膜，具有优异的工艺适用性，适用于液体浸没式光刻技术，可以高精度地形成微图案。

2. 发明授权

US07771913B2 Resist composition and patterning process using the same 有权
标题翻译：抗蚀剂组成和图案化工艺使用相同
公开(公告)号：US07771913B2
公开(公告)日：2010-08-10
申请号：US11730289
申请日：2007-03-30
申请人： Tatsushi Kaneko , Jun Hatakeyama , Yuji Harada
发明人： Tatsushi Kaneko , Jun Hatakeyama , Yuji Harada
IPC分类号： G03F7/039 , G03F7/038 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： There is disclosed a resist composition comprising, at least, a polymer including repeating units represented by the following general formula (1). There can be provided a resist composition that has a good barrier property against water, prevents resist components from leaching to water, has high receding contact angle against water, does not require a protective film, has an excellent process applicability, suitable for the liquid immersion lithography and makes it possible to form micropatterns with high precision.
摘要翻译：公开了一种抗蚀剂组合物，其至少包含由以下通式（1）表示的重复单元的聚合物。可以提供对水具有良好的阻隔性的抗蚀剂组合物，防止抗蚀剂成分浸出水，与水的后退接触角高，不需要保护膜，具有优异的工艺适用性，适用于液浸光刻，并且可以以高精度形成微图案。

3. 发明授权

US07368218B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US07368218B2
公开(公告)日：2008-05-06
申请号：US11101591
申请日：2005-04-08
申请人： Jun Hatakeyama , Tatsushi Kaneko
发明人： Jun Hatakeyama , Tatsushi Kaneko
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111 , Y10S430/115
摘要： A polymer which is obtained from a combination of (meth)acrylate having a bridged ring lactone group and (meth)acrylate having an acid leaving group with a hexafluoroalcohol group is used as a base resin to formulate a positive resist composition which when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development. The composition also has excellent dry etching resistance.
摘要翻译：使用由具有桥环内酯基的（甲基）丙烯酸酯与具有酸性离去基团的具有六氟醇基的（甲基）丙烯酸酯）组合获得的聚合物作为基础树脂，以配制正极抗蚀剂组合物能量辐射和发展，显示出高灵敏度，高分辨率和最小的线边缘粗糙度由于开发过程中控制膨胀。该组合物还具有优异的耐干蚀刻性。

4. 发明授权

US07255973B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US07255973B2
公开(公告)日：2007-08-14
申请号：US11101568
申请日：2005-04-08
申请人： Jun Hatakeyama , Tatsushi Kaneko
发明人： Jun Hatakeyama , Tatsushi Kaneko
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.
摘要翻译：使用包含衍生自外型酯的单体和由具有两个六氟异丙醇基团的酯衍生的单元的聚合物作为基础树脂，以配制正型抗蚀剂组合物，其通过光刻曝光和显影时通过溶胀使线边缘粗糙度最小化在开发过程中和残渣发育后，粘附性得到改善。

5. 发明申请

US20050227173A1 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US20050227173A1
公开(公告)日：2005-10-13
申请号：US11101568
申请日：2005-04-08
申请人： Jun Hatakeyama , Tatsushi Kaneko
发明人： Jun Hatakeyama , Tatsushi Kaneko
IPC分类号： G03C1/492 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.
摘要翻译：使用包含衍生自外型酯的单体和由具有两个六氟异丙醇基团的酯衍生的单元的聚合物作为基础树脂，以配制正型抗蚀剂组合物，其通过光刻曝光和显影时通过溶胀使线边缘粗糙度最小化在开发过程中和残渣发育后，粘附性得到改善。

6. 发明申请

US20050227174A1 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US20050227174A1
公开(公告)日：2005-10-13
申请号：US11101591
申请日：2005-04-08
申请人： Jun Hatakeyama , Tatsushi Kaneko
发明人： Jun Hatakeyama , Tatsushi Kaneko
IPC分类号： G03C1/492 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111 , Y10S430/115
摘要： A polymer which is obtained from a combination of (meth)acrylate having a bridged ring lactone group and (meth)acrylate having an acid leaving group with a hexafluoroalcohol group is used as a base resin to formulate a positive resist composition which when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development. The composition also has excellent dry etching resistance.
摘要翻译：使用由具有桥环内酯基的（甲基）丙烯酸酯与具有酸性离去基团的具有六氟醇基的（甲基）丙烯酸酯）组合获得的聚合物作为基础树脂，以配制正极抗蚀剂组合物能量辐射和发展，显示出高灵敏度，高分辨率和最小的线边缘粗糙度由于开发过程中控制膨胀。该组合物还具有优异的耐干蚀刻性。

7. 发明申请

US20130065183A1 PATTERNING PROCESS AND RESIST COMPOSITION 审中-公开
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20130065183A1
公开(公告)日：2013-03-14
申请号：US13606297
申请日：2012-09-07
申请人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
发明人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film.
摘要翻译：提供了抗蚀剂组合物，其包含聚合物，其包含具有被保护的羟基的重复单元，光致酸产生剂，有机溶剂和包含氟化重复单元的无羟基聚合物添加剂。通过涂覆抗蚀剂组合物，预烘烤以形成抗蚀剂膜，在有机溶剂基显影剂中曝光，烘烤和显影曝光的膜以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。

8. 发明申请

US20120249995A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD 审中-公开
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：US20120249995A1
公开(公告)日：2012-10-04
申请号：US13494746
申请日：2012-06-12
申请人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
发明人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
IPC分类号： G03B27/32
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.
摘要翻译：本发明是用于浸没式光刻的保护膜材料，其能够进行希望的浸渍光刻，可以与光致抗蚀剂层的显影同时除去，并且具有优异的工艺适应性。本发明还包括使用该材料形成图案的方法。更具体地说，本发明是一种保护膜材料，其包含（i）包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含具有无氟烷基和任选的碱可溶重复单元的重复单元，或（ii）含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元无氟烷基和任选的碱溶性重复单元。

9. 发明授权

US07666967B2 Ester compound, polymer, resist composition, and patterning process 有权
标题翻译：酯化合物，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07666967B2
公开(公告)日：2010-02-23
申请号：US11606069
申请日：2006-11-30
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Kazuhiko Maeda , Haruhiko Komoriya , Michitaka Ootani
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Kazuhiko Maeda , Haruhiko Komoriya , Michitaka Ootani
IPC分类号： C08F214/18
CPC分类号： C07D307/93 , C07D409/12 , G03F7/0046 , G03F7/0397
摘要： A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.
摘要翻译：使用包含通过聚合式（1）的酯化合物获得的重复单元（2）的聚合物来形成抗蚀剂组合物。 R 1是F或C 1 -C 6氟代烷基，R 2是H或C 1 -C 8烷基，R 3是O或C 1 -C 6亚烷基，R 4和R 5各自是H或C 1 -C 10烷基或氟代烷基，R 6是H或酸不稳定基团。当通过ArF光刻处理时，抗蚀剂组合物具有改进的分辨率，透明度，最小的线边缘粗糙度和耐蚀刻性的优点。当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时，抗蚀剂组合物表现出更好的性能。

10. 发明授权

US07642034B2 Polymer, resist protective coating material, and patterning process 有权
标题翻译：聚合物，抗蚀剂保护涂层材料和图案化工艺
公开(公告)号：US07642034B2
公开(公告)日：2010-01-05
申请号：US11699485
申请日：2007-01-30
申请人： Jun Hatakeyama , Koji Hasegawa , Yuji Harada
发明人： Jun Hatakeyama , Koji Hasegawa , Yuji Harada
IPC分类号： G03F7/00 , G03F7/004 , C08F218/00
CPC分类号： G03F7/11 , C08F220/18 , C08F220/24 , C08F220/26 , C08F220/28 , C08F232/08 , G03F7/0046 , G03F7/2041
摘要： A polymer comprising repeat units having formula (1) wherein R1 and R2 are hydrogen or C1-C12 alkyl, or R1 and R2 may bond together to form a ring, and R30 is hydrogen or methyl is used to formulate a resist protective coating material. A protective coating formed therefrom on a resist film is water-insoluble, dissolvable in alkali aqueous solution or alkaline developer, and immiscible with the resist film so that the immersion lithography can be conducted in a satisfactory manner. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.
摘要翻译：包含具有式（1）的重复单元的聚合物，其中R 1和R 2是氢或C 1 -C 12烷基，或者R 1和R 2可以键合在一起形成环，并且R 30是氢或甲基来配制抗蚀剂保护涂层材料。在抗蚀剂膜上形成的保护涂层是水不溶性的，可溶于碱性水溶液或碱性显影剂中，与抗蚀剂膜不混溶，使浸渍光刻可以以令人满意的方式进行。在碱显影过程中，可以同时实现抗蚀剂膜的开发和保护涂层的去除。

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