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1. 发明授权

US07525144B2 Insulating film and semiconductor device 有权
标题翻译：绝缘膜和半导体器件
公开(公告)号：US07525144B2
公开(公告)日：2009-04-28
申请号：US11689212
申请日：2007-03-21
申请人： Tatsuo Shimizu , Noburu Fukushima
发明人： Tatsuo Shimizu , Noburu Fukushima
IPC分类号： H01L29/94
CPC分类号： H01L21/02194 , H01L21/02161 , H01L21/28194 , H01L21/28238 , H01L21/31641 , H01L21/31645 , H01L28/65 , H01L29/517 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： An insulating film includes an oxide of a metal selected from Hf and Zr, the oxide being doped by at least one of Ba, Sr and Mg. And the insulating film satisfies the following formula (1): 0.06 at %≦[Ba]+[Sr]+[Mg]≦1.4 at % (1) wherein [Ba] represents atomic % of Ba, [Sr] represents atomic % of Sr, and [Mg] represents atomic % of Mg.
摘要翻译：绝缘膜包括选自Hf和Zr的金属的氧化物，所述氧化物被Ba，Sr和Mg中的至少一种掺杂。绝缘膜满足下列公式（1）：<？in-line-formula description =“In-line formula”end =“lead”≥0.06 at％<= [Ba] + [Sr] + [Mg] 其中[Ba]表示Ba的原子％，[Sr]表示Sr的原子％，Sr表示原子％的Sr， [Mg]表示Mg的原子％。

2. 发明授权

US5986301A Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity 失效
标题翻译：具有电极的薄膜电容器具有钙钛矿结构和金属导电性
公开(公告)号：US5986301A
公开(公告)日：1999-11-16
申请号：US858768
申请日：1997-05-19
申请人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
发明人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
IPC分类号： C30B29/22 , H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/12 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1203 , H01L27/11502 , H01L27/11507 , H01L28/75 , H01L27/10808 , H01L27/10829 , H01L28/55
摘要： A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO.sub.3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.
摘要翻译：薄膜电容器包括夹在顶部和底部电极之间的具有钙钛矿结构的电介质薄膜。顶部电极和底部电极中的至少一个由具有由通式ABO 3表示的钙钛矿结构的导电氧化物材料制成，其中A表示由至少两种碱土金属和稀土金属组成的A位元素，以及 B表示由至少一种过渡金属组成的B位元素。电容器的漏电流小，占用面积小，并提供大电容。因此，电容器实现了诸如千兆级DRAM的高集成半导体存储器。

3. 发明申请

US20070228526A1 INSULATING FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：绝缘膜和半导体器件
公开(公告)号：US20070228526A1
公开(公告)日：2007-10-04
申请号：US11689212
申请日：2007-03-21
申请人： Tatsuo Shimizu , Noburu Fukushima
发明人： Tatsuo Shimizu , Noburu Fukushima
IPC分类号： H01L23/58
CPC分类号： H01L21/02194 , H01L21/02161 , H01L21/28194 , H01L21/28238 , H01L21/31641 , H01L21/31645 , H01L28/65 , H01L29/517 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： An insulating film includes an oxide of a metal selected from Hf and Zr, the oxide being doped by at least one of Ba, Sr and Mg. And the insulating film satisfies the following formula (1): 0.06 at %≦[Ba]+[Sr]+[Mg]≦1.4 at % (1) wherein [Ba] represents atomic % of Ba, [Sr] represents atomic % of Sr, and [Mg] represents atomic % of Mg.
摘要翻译：绝缘膜包括选自Hf和Zr的金属的氧化物，所述氧化物被Ba，Sr和Mg中的至少一种掺杂。绝缘膜满足下列公式（1）：<？in-line-formula description =“In-line formula”end =“lead”≥0.06 at％<= [Ba] + [Sr] + [Mg] 其中[Ba]表示Ba的原子％，[Sr]表示Sr的原子％，Sr表示原子％的Sr， [Mg]表示Mg的原子％。

4. 发明授权

US08927404B2 Insulating film and semiconductor device including the same 有权
标题翻译：绝缘膜和包括其的半导体器件
公开(公告)号：US08927404B2
公开(公告)日：2015-01-06
申请号：US13445328
申请日：2012-04-12
申请人： Tatsuo Shimizu , Masato Koyama
发明人： Tatsuo Shimizu , Masato Koyama
IPC分类号： H01L21/4763 , H01L29/51 , H01L21/318 , H01L49/02 , H01L21/28 , H01L21/316 , H01L21/3115 , H01L29/66
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/28273 , H01L21/28282 , H01L21/31155 , H01L21/316 , H01L21/318 , H01L28/40 , H01L29/518 , H01L29/66545 , H01L29/66553 , H01L29/788 , H01L29/792
摘要： It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2≦1.0×1021 cm−3.
摘要翻译：可以提供能够减小漏电流的绝缘膜。绝缘膜包括：含有金属，氢和氮的非晶氧化物介电膜。氧化物电介质膜中的氮量[N]和氢量[H]满足以下关系：{[N] - [H]} / 2＆nlE; 1.0×1021cm-3。

5. 发明授权

US08817671B2 Full duplex transmission circuit and electronic apparatus 有权
标题翻译：全双工传输电路和电子设备
公开(公告)号：US08817671B2
公开(公告)日：2014-08-26
申请号：US13325489
申请日：2011-12-14
申请人： Tatsuo Shimizu , Uichiro Omae
发明人： Tatsuo Shimizu , Uichiro Omae
IPC分类号： H04B1/56 , H03F3/45
CPC分类号： H04L5/14 , H04L25/0272
摘要： Disclosed herein is a full duplex transmission circuit including: a first internal input terminal receiving a signal to be transmitted; a second internal input terminal receiving a signal having an amplitude equal to ½ times the amplitude of the signal to be transmitted and having the same phase as the phase of the signal to be transmitted; an external input/output terminal; an internal output terminal; a first metal oxide semiconductor transistor; and the second metal oxide semiconductor transistor. A current generated by the current source as well as the sizes of the first and second metal oxide semiconductor transistors are set so that the transconductances of the first and second metal oxide semiconductor transistors become equal to 1/Z.
摘要翻译：这里公开了一种全双工传输电路，包括：第一内部输入端子，接收待传输的信号; 第二内部输入端子接收具有等于要发送的信号的振幅的1/2倍的信号的信号，并且具有与要发送的信号的相位相同的相位; 外部输入/输出端子; 内部输出端子; 一第一金属氧化物半导体晶体管; 和第二金属氧化物半导体晶体管。设置由电流源产生的电流以及第一和第二金属氧化物半导体晶体管的尺寸，使得第一和第二金属氧化物半导体晶体管的跨导变为等于1 / Z。

6. 发明授权

US08436417B2 Oxide cluster semiconductor memory device 有权
标题翻译：氧化物簇半导体存储器件
公开(公告)号：US08436417B2
公开(公告)日：2013-05-07
申请号：US12880711
申请日：2010-09-13
申请人： Tatsuo Shimizu , Atsuhiro Kinoshita
发明人： Tatsuo Shimizu , Atsuhiro Kinoshita
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , B82Y10/00 , G11C16/0466 , H01L21/28282 , H01L27/11568 , H01L29/42348 , H01L29/66833
摘要： According to one embodiment, in a semiconductor memory device, a source region and a drain region are disposed away from each other in the semiconductor layer. A tunnel insulating film is formed between the source region and the drain region on the semiconductor layer. A charge accumulating film includes an oxide cluster and is formed on the tunnel insulating film. A block insulating film is formed on the charge accumulating film. A gate electrode is formed on the block insulating film. The oxide cluster includes either Zr or Hf, and further contains at least one element selected from Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au and Hg.
摘要翻译：根据一个实施例，在半导体存储器件中，源极区域和漏极区域在半导体层中彼此远离地设置。在半导体层上的源极区域和漏极区域之间形成隧道绝缘膜。电荷累积膜包括氧化物簇并形成在隧道绝缘膜上。在电荷累积膜上形成块绝缘膜。栅电极形成在块绝缘膜上。氧化物簇包括Zr或Hf，还含有选自Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Nb，Mo，Tc，Ru，Rh，Pd，Ag中的至少一种元素， Cd，Ta，W，Re，Os，Ir，Pt，Au和Hg。

7. 发明授权

US07960793B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07960793B2
公开(公告)日：2011-06-14
申请号：US12370641
申请日：2009-02-13
申请人： Tatsuo Shimizu , Masato Koyama
发明人： Tatsuo Shimizu , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L21/823857 , H01L21/823821 , H01L21/823842 , H01L27/1203 , H01L29/785
摘要： According to one embodiment, it is possible to provide a semiconductor device provided with an MIS transistor which has an effective work function being, as much as possible, suitable for low threshold operation. A CMIS device provided with an electrode having an optimal effective work function and enabling low threshold operation to achieve by producing an in-gap level by the addition of a high valence metal in an Hf (or Zr) oxide and changing a position of the in-gap level by nitrogen or fluorine or the like has been realized.
摘要翻译：根据一个实施例，可以提供一种设置有MIS晶体管的半导体器件，该半导体器件具有尽可能多的适合于低阈值操作的有效功函数。具有电极的CMIS器件具有最佳的有效功函数，并且能够通过在Hf（或Zr）氧化物中添加高价金属而产生空隙间电平来实现低阈值操作，从而改变位于通过氮或氟等的差异水平已经实现。

8. 发明授权

US07859077B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07859077B2
公开(公告)日：2010-12-28
申请号：US11937730
申请日：2007-11-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L31/06
CPC分类号： H01L27/1443 , H04B10/801
摘要： A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.
摘要翻译：半导体器件包括：串联连接的n型MOS晶体管和p型MOS晶体管; 以及通过n型MOS晶体管的沟道上的绝缘膜和p型MOS晶体管的沟道延伸的第一栅极。通过向第一栅极提供光，产生电子和空穴，电子和空穴中的至少一个通过n型MOS晶体管的沟道上方，并且任一电子和空穴中的至少一个穿过在p型MOS晶体管的沟道之上，从而切换n型MOS晶体管和p型MOS晶体管。

9. 发明授权

US07809039B2 Light-emitting device and manufacturing method of the same 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US07809039B2
公开(公告)日：2010-10-05
申请号：US12409693
申请日：2009-03-24
申请人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , B82Y20/00 , H01S5/021 , H01S5/026 , H01S5/1032 , H01S5/1071 , H01S5/30 , H01S5/3224 , H01S5/34 , H01S5/3428
摘要： A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.
摘要翻译：一种半导体发光装置，分别包括绝缘膜，形成在绝缘膜上的光谐振器，以及分别设置在光谐振器两侧的p电极和n电极。光谐振器包括：第一半导体布线和第二半导体布线，它们与其间隔开的空间平行设置，该空间比发射波长窄，设置在这些半导体布线两端的谐振镜，以及多个半导体超导体介于第一半导体布线和第二半导体布线之间并与这些半导体布线电连接的第一半导体布线与p电极电连接，第二半导体布线与n型电极电连接，电极，从而使得半导体超薄膜能够在注入电流时产生激光振荡。

10. 发明授权

US07755136B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07755136B2
公开(公告)日：2010-07-13
申请号：US11684757
申请日：2007-03-12
申请人： Yukie Nishikawa , Akira Takashima , Tatsuo Shimizu
发明人： Yukie Nishikawa , Akira Takashima , Tatsuo Shimizu
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/7885
摘要： A memory cell in a nonvolatile semiconductor memory device includes a tunneling insulating film, a floating gate electrode made of a Si containing conductive material, an inter-electrode insulating film made of rare-earth oxide, rare-earth nitride or rare-earth oxynitride, a control gate electrode, and a metal silicide film formed between the floating gate electrode and the inter-electrode insulating film.
摘要翻译：非易失性半导体存储器件中的存储单元包括隧道绝缘膜，由含Si导电材料制成的浮栅，由稀土氧化物制成的电极间绝缘膜，稀土氮化物或稀土氧氮化物，一个控制栅极电极和一个形成在浮置栅电极和电极间绝缘膜之间的金属硅化物膜。

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