专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08038799B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08038799B2
公开(公告)日：2011-10-18
申请号：US12440400
申请日：2007-09-05
申请人： Tatsuo Nagai , Hiroshi Morita , Hiroaki Takahashi , Hiroaki Uchida , Toyohide Hayashi
发明人： Tatsuo Nagai , Hiroshi Morita , Hiroaki Takahashi , Hiroaki Uchida , Toyohide Hayashi
IPC分类号： C23G1/02
CPC分类号： G03F7/423 , H01L21/6708
摘要： A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.
摘要翻译：提供了可以从衬底中令人满意地去除抗蚀剂的衬底处理设备和衬底处理方法，并且可以再循环用于除去抗蚀剂的处理溶液。基板处理装置包括：保持基板的基板保持装置; 使用硫酸生成过氧硫酸的过氧硫酸生成装置; 将由过硫酸产生装置产生的过氧硫酸与比过硫酸产生装置中使用的硫酸更高和更高浓度的硫酸混合的混合装置; 以及排出装置将由所述基板保持装置保持的基板排出由所述混合装置混合的所述过硫酸和所述硫酸的混合溶液作为从所述基板除去抗蚀剂的处理溶液。

2. 发明申请

US20100175714A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20100175714A1
公开(公告)日：2010-07-15
申请号：US12440400
申请日：2007-09-05
申请人： Tatsuo Nagai , Hiroshi Morita , Hiroaki Takahashi , Hiroaki Uchida , Toyohide Hayashi
发明人： Tatsuo Nagai , Hiroshi Morita , Hiroaki Takahashi , Hiroaki Uchida , Toyohide Hayashi
IPC分类号： B08B3/08
CPC分类号： G03F7/423 , H01L21/6708
摘要： A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.
摘要翻译：提供了可以从衬底中令人满意地去除抗蚀剂的衬底处理设备和衬底处理方法，并且可以再循环用于除去抗蚀剂的处理溶液。基板处理装置包括：保持基板的基板保持装置; 使用硫酸生成过氧硫酸的过氧硫酸生成装置; 将由过硫酸产生装置产生的过氧硫酸与比过硫酸产生装置中使用的硫酸更高和更高浓度的硫酸混合的混合装置; 以及排出装置将由所述基板保持装置保持的基板排出由所述混合装置混合的所述过硫酸和所述硫酸的混合溶液作为从所述基板除去抗蚀剂的处理溶液。

3. 发明申请

US20080236639A1 SUBSTRATE TREATING APPARATUS 审中-公开
标题翻译：基板处理装置
公开(公告)号：US20080236639A1
公开(公告)日：2008-10-02
申请号：US12053922
申请日：2008-03-24
申请人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
发明人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
IPC分类号： B08B3/08 , B08B3/12
CPC分类号： H01L21/67086 , H01L21/67057
摘要： A substrate treating apparatus for treating substrates with a treating liquid includes a treating tank having an inner tank for storing the treating liquid, and an outer tank for collecting the treating liquid overflowing the inner tank. A supply pipe interconnects the inner tank and the outer tank for circulating the treating liquid. A first branch pipe is shunted from the supply pipe, and a separator is mounted on the first branch pipe for separating deionized water and a solvent in the treating liquid, and discharging the deionized water. A second branch pipe interconnects positions upstream and downstream of the separator, and a deionized water remover is mounted on the second branch pipe for adsorbing and removing deionized water from the treating liquid. An injection pipe is connected to the supply pipe for injecting deionized water in a position downstream of the separator. A solvent injector injects the solvent into the injection pipe. A controller carries out a deionized water cleaning process for supplying deionized water from the injection pipe and cleaning the substrates inside the cleaning tank with deionized water, then a replacing process for injecting the solvent from the solvent injector and replacing the deionized water with the solvent, a separating and removing process for switching to the first branch pipe and causing the separator to remove the deionized water from the treating liquid, and an adsorbing and removing process for switching to the second branch pipe and causing the deionized water remover to adsorb and remove the deionized water from the treating liquid.
摘要翻译：用处理液处理基板的基板处理装置包括具有用于储存处理液的内罐的处理槽和用于收集溢出内罐的处理液的外罐。供给管将内罐和外罐相互连接，以使处理液循环。第一分支管从供给管分流，分离器安装在第一支管上，用于分离处理液中的去离子水和溶剂，并排出去离子水。第二分支管将分离器的上游和下游的位置相互连接，并且去离子水去除器安装在第二分支管上，用于从处理液中吸附和去除去离子水。喷射管连接到供给管，用于在分离器的下游位置喷射去离子水。溶剂注入器将溶剂注入注射管中。控制器执行去离子水清洗工艺，用于从注射管中提供去离子水，并用去离子水清洗清洗槽内的基材，然后用溶剂注入器中的溶剂注入和用溶剂代替去离子水的替换过程，用于切换到第一分支管并使分离器从处理液中除去去离子水的分离和去除过程，以及用于切换到第二分支管并使去离子水去除剂吸附和去除来自处理液体的去离子水。

4. 发明授权

US08608864B2 Substrate treating method 有权
标题翻译：底物处理方法
公开(公告)号：US08608864B2
公开(公告)日：2013-12-17
申请号：US13178059
申请日：2011-07-07
申请人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
发明人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
IPC分类号： B08B3/00 , B08B7/04 , B08B6/00
CPC分类号： H01L21/67086 , H01L21/67057
摘要： A substrate treating method for treating substrates with a treating liquid includes a deionized water cleaning step for supplying deionized water from an injection pipe and cleaning the substrates inside a cleaning tank with deionized water, then a replacing step for injecting a solvent from a solvent injector and replacing the deionized water with the solvent, a separating and removing step for switching a channel to a branch pipe and causing a separator to remove the deionized water from the treating liquid, and an adsorbing and removing step for switching the channel to another branch pipe and causing a deionized water remover to adsorb and remove the deionized water from the treating liquid.
摘要翻译：用处理液处理基板的基板处理方法包括：去离子水清洗步骤，用于从注入管供给去离子水，并用去离子水清洗清洗槽内的基板，然后用溶剂注入器注入溶剂的替换步骤;以及用溶剂代替去离子水，分离和去除步骤，用于将通道切换到分支管并使分离器从处理液中除去去离子水;以及吸附和去除步骤，用于将通道切换到另一分支管，以及使去离子水去除剂从处理液中吸附并除去去离子水。

5. 发明授权

US06403924B1 Apparatus for and method of heat treatment and substrate processing apparatus 失效
标题翻译：热处理装置及其处理方法及基板处理装置
公开(公告)号：US06403924B1
公开(公告)日：2002-06-11
申请号：US09686239
申请日：2000-10-11
申请人： Toyohide Hayashi
发明人： Toyohide Hayashi
IPC分类号： F27B514
CPC分类号： H01L21/67109 , Y10S414/135 , Y10S414/139
摘要： A heat treatment apparatus and a substrate processing apparatus having the heat treatment apparatus incorporated therein are provided. Nitrogen gas flowing through a gas inlet (16) into a chamber (15) is diffused by a diffusion filter (18) to produce a uniform laminar flow in a horizontal direction, and the laminar flow exits from the chamber (15) through an opening (41) to prevent outside air from entering the chamber (15), thereby maintaining a low oxygen concentration atmosphere within the chamber (15). Performing heat treatment upon a substrate by a heater (30) within the chamber (15) prevents oxygen molecules from being introduced into a film on the substrate to provide a low dielectric constant of the film. Within the chamber (15), the substrate (W) held on a transport arm (60) in which a coolant is circulated is rapidly cooled down. Thus, processing time is shortened, and high processing efficiency is provided. Therefore, the heat treatment apparatus can form the predetermined film having a low dielectric constant and provide high processing efficiency.
摘要翻译：提供了一种热处理设备和其中结合有热处理设备的基板处理设备。流过气体入口（16）进入腔室（15）的氮气被扩散过滤器（18）扩散，以在水平方向上产生均匀的层流，并且层流从腔室（15）通过开口（41），以防止外部空气进入室（15），从而在室（15）内保持低氧浓度气氛。通过室（15）内的加热器（30）对衬底进行热处理防止氧分子被引入到衬底上的膜中以提供薄膜的低介电常数。在室（15）内，保持在冷却剂循环的输送臂（60）上的基板（W）被快速冷却。因此，缩短了处理时间，提供了高的处理效率。因此，热处理装置可以形成具有低介电常数的预定膜并提供高处理效率。

6. 发明授权

US08652268B2 Substrate treating method for treating substrates with treating liquids 有权
标题翻译：用处理液处理基材的基板处理方法
公开(公告)号：US08652268B2
公开(公告)日：2014-02-18
申请号：US13016252
申请日：2011-01-28
申请人： Toyohide Hayashi
发明人： Toyohide Hayashi
IPC分类号： B08B7/04 , B08B3/00 , B08B1/02 , B08B7/00
CPC分类号： H01L21/67023 , B08B3/048 , B08B3/08 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/67253
摘要： A method for treating substrates with treating liquids, using a treating tank for storing the treating liquids, a holding mechanism for holding the substrates in a treating position inside the treating tank, first and second treating liquid supply devices, a temperature control device, and a control device. A first treating liquid is supplied into the treating tank, then a second treating liquid of lower surface tension and higher boiling point than the first treating liquid is supplied, and placed in a temperature range above the boiling point of the first treating liquid and below the boiling point of the second treating liquid. Then the second treating liquid supply device may be controlled to replace the first treating liquid with the second treating liquid, while controlling the temperature control device to maintain the second treating liquid in the same temperature range.
摘要翻译：一种用处理液处理基材的方法，使用处理槽储存处理液，将基板保持在处理槽内的处理位置的保持机构，第一和第二处理液供给装置，温度控制装置和控制装置将第一处理液体供给到处理槽中，然后供给比第一处理液低的表面张力和沸点高的第二处理液，并置于高于第一处理液的沸点以下的温度范围内第二处理液的沸点。然后可以控制第二处理液体供给装置以用第二处理液代替第一处理液，同时控制温度控制装置以将第二处理液维持在相同的温度范围内。

7. 发明授权

US5762684A Treating liquid supplying method and apparatus 失效
标题翻译：处理液体供应方法和装置
公开(公告)号：US5762684A
公开(公告)日：1998-06-09
申请号：US753706
申请日：1996-11-27
申请人： Toyohide Hayashi , Masaki Iwami
发明人： Toyohide Hayashi , Masaki Iwami
IPC分类号： B01D19/00 , B01D53/22
CPC分类号： B01D19/0063 , B01D19/0031
摘要： A degassing module mounted in an intermediate position of a delivery pipe includes a fluid passage formed of a gas-permeable film material. The fluid passage is enclosed in a gas-tight vacuum chamber. A degassing pipe is connected to the vacuum chamber. The degassing pipe has a switch valve for breaking a communication between a sealed space in the vacuum chamber and a vacuum source, thereby forming a closed section including part of the degassing pipe and the sealed space in the vacuum chamber. A reduced quantity of solvent evaporates from a treating solution flowing through the fluid passage of the degassing module, and passes in the form of solvent vapor through the gas-permeable film material into the sealed space of the vacuum chamber. This minimizes change in the concentration and temperature of the treating solution flowing through the degassing module. The degassing pipe has a trap formed in an intermediate position thereof. A liquid level sensor detects the treating solution collected in a predetermined quantity in the trap. An alarm is given in response to a detection signal from the sensor. When the fluid passage of the degassing module is broken, the abnormality is detected reliably to avoid inconveniences due to a decrease in the degassing capability of the degassing module.
摘要翻译：安装在输送管的中间位置的脱气模块包括由透气膜材料形成的流体通道。流体通道被封闭在气密的真空室中。脱气管连接到真空室。脱气管具有用于破坏真空室中的密封空间与真空源之间的连通的开关阀，从而形成包括脱气管的一部分和真空室中的密封空间的封闭部分。减少量的溶剂从流过脱气组件的流体通道的处理溶液中蒸发，并以溶剂蒸汽的形式通过透气薄膜材料进入真空室的密封空间。这使得流过脱气模块的处理溶液的浓度和温度变化最小化。脱气管具有形成在其中间位置的捕集器。液位传感器检测在捕集器中以预定量收集的处理溶液。响应于来自传感器的检测信号而发出报警。当脱气模块的流体通道破裂时，可靠地检测异常，以避免由于脱气模块的脱气能力降低而引起的不便。

8. 发明申请

US20050199187A1 Heat treatment apparatus and substrate processing apparatus 审中-公开
标题翻译：热处理装置及基板处理装置
公开(公告)号：US20050199187A1
公开(公告)日：2005-09-15
申请号：US11080770
申请日：2005-03-15
申请人： Toyohide Hayashi , Masaki Nishida
发明人： Toyohide Hayashi , Masaki Nishida
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/54 , C23C16/4401 , C23C16/46 , H01L21/02118 , H01L21/02318 , H01L21/67017 , H01L21/67742 , H01L21/67748
摘要： Seven gas ejection ports are provided in an upper surface of a transport arm, and are connected to gas supply piping. The gas supply piping is connected through a valve to a nitrogen gas supply unit. When the valve is opened with a substrate held on the transport arm, nitrogen gas is supplied from the nitrogen gas supply unit and ejected toward the entire space between the substrate held by the transport arm and the transport arm. Supplying the nitrogen gas to the space between the substrate and the transport arm prior to the loading of the substrate into a chamber causes the ambient atmosphere in the space to be replaced with the nitrogen gas. The transport arm is prevented from bringing the ambient atmosphere into the chamber, whereby the increase in oxygen concentration within the chamber is reliably inhibited. This provides a heat treatment apparatus capable of reliably inhibiting the increase in oxygen concentration within the chamber.
摘要翻译：七个气体喷出口设置在输送臂的上表面，并与气体供给管连接。供气管道通过阀连接到氮气供应单元。当用保持在输送臂上的基板打开阀时，从氮气供给单元供给氮气，并将其输送到由输送臂保持的基板与输送臂之间的整个空间。在将基板装载到室内之前，将氮气供给到基板和输送臂之间的空间，导致空间中的周围空气被氮气置换。防止输送臂将环境气体引入室内，从而可靠地抑制室内的氧浓度的增加。这提供了能够可靠地抑制室内的氧浓度增加的热处理装置。

9. 发明申请

US20080078423A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20080078423A1
公开(公告)日：2008-04-03
申请号：US11860733
申请日：2007-09-25
申请人： Hiroyuki Araki , Toyohide Hayashi
发明人： Hiroyuki Araki , Toyohide Hayashi
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/02057 , H01L21/68728 , H01L21/68742
摘要： Holes having a variety of shapes exist on a surface of a substrate. When pure water is supplied on the substrate in a rinsing process, part of the pure water enters the holes. The pure water which have entered the holes can be hardly shaken off even though the substrate is rotated at a high speed. Therefore, HFE is held on the substrate so as to form an HFE layer after the rinsing process. In this case, the HFE enters the holes while the pure water emerges from the holes to the upper surface of the HFE due to a difference in specific gravity between the pure water and the HFE. Thus, the pure water is reliably prevented from remaining in the holes.
摘要翻译：具有各种形状的孔存在于基板的表面上。当在漂洗过程中在基材上供应纯水时，部分纯水进入孔中。进入孔的纯水即使基材高速旋转也难以摇动。因此，HFE被保持在基板上，以便在漂洗过程之后形成HFE层。在这种情况下，由于纯水和HFE之间的比重差异，HFE进入孔，而纯水从孔到HFE的上表面出现。因此，可靠地防止纯水残留在孔中。

10. 发明申请

US20070289611A1 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20070289611A1
公开(公告)日：2007-12-20
申请号：US11761121
申请日：2007-06-11
申请人： Toyohide Hayashi
发明人： Toyohide Hayashi
IPC分类号： B08B3/00
CPC分类号： H01L21/67028 , H01L21/02052 , H01L21/02057 , H01L21/67051
摘要： The substrate treatment method includes: a cleaning step of supplying deionized water to a major surface of a substrate to clean the substrate; a pre-drying treatment step of supplying a pre-drying treatment liquid containing an organic solvent more volatile than the deionized water to the major surface of the substrate after the cleaning step to replace deionized water remaining on the major surface with the pre-drying treatment liquid; and a drying step of removing the pre-drying treatment liquid supplied to the major surface of the substrate after the pre-drying treatment step to dry the substrate. The pre-drying treatment step includes: a deionized water/organic solvent mixture supplying step of supplying a mixture of the deionized water and the organic solvent as the pre-drying treatment liquid to the major surface of the substrate; and a mixing ratio changing step of increasing the proportion of the organic solvent in the mixture of the deionized water and the organic solvent during the deionized water/organic solvent mixture supplying step.
摘要翻译：基板处理方法包括：将去离子水供给到基板的主表面以清洁基板的清洁步骤; 预干燥处理步骤，在清洁步骤之后，将含有比去离子水更易挥发的有机溶剂的预干燥处理液供给到基板的主表面，以用预干燥处理来代替残留在主表面上的去离子水液体; 以及干燥步骤，在预干燥处理步骤之后，除去供给到基板的主表面的预干燥处理液体，以干燥基板。预干燥处理步骤包括：将去离子水和有机溶剂的混合物作为预干燥处理液体的去离子水/有机溶剂混合物供给到基材的主表面; 以及在去离子水/有机溶剂混合物供给步骤期间增加去离子水和有机溶剂的混合物中的有机溶剂的比例的混合比率变化步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式