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1. 发明申请

US20130048034A1 SUBSTRATE TREATING APPARATUS 审中-公开
标题翻译：基板处理装置
公开(公告)号：US20130048034A1
公开(公告)日：2013-02-28
申请号：US13584279
申请日：2012-08-13
申请人： Tadashi MAEGAWA
发明人： Tadashi MAEGAWA
IPC分类号： B08B3/04
CPC分类号： H01L21/67057
摘要： A substrate treating apparatus for immersing substrates in a treating liquid. An inner tank stores the treating liquid, an outer tank collects the treating liquid overflowing the inner tank, and a lifter moves the substrates between a standby position above the inner tank and a treating position inside the inner tank. Circulation piping connects the inner tank and the outer tank. The treating liquid overflows the inner tank into the outer tank in a treating state with the lifter and the substrates located in the treating position. The treating liquid remains in the inner tank without overflowing in a non-treating state with the lifter and the substrates located in the standby position. The treating liquid flows from the inner tank to the outer tank through the circulating piping in a non-treating circulation state before the lifter moves the substrates to the treating position.
摘要翻译：一种将基板浸入处理液中的基板处理装置。内箱储存处理液，外箱收集溢出内箱的处理液，升降机使内箱上方的备用位置与内箱内的处理位置移动基板。循环管道连接内罐和外罐。处理液在处理状态下将内罐溢出到外罐中，升降机和基板位于处理位置。处理液体保持在内罐中，而不会在升降器和基板处于待机位置时处于非处理状态而溢出。在提升器将基板移动到处理位置之前，处理液体以非处理循环状态通过循环管道从内罐流到外罐。

2. 发明授权

US5656088A Apparatus for dipping substrates in processing fluid 失效
标题翻译：用于将基材浸渍在处理流体中的装置
公开(公告)号：US5656088A
公开(公告)日：1997-08-12
申请号：US936030
申请日：1992-08-26
申请人： Kenji Sugimoto , Tadashi Maegawa , Akihiko Hidaka , Toshio Hiroe , Hideki Hayashi
发明人： Kenji Sugimoto , Tadashi Maegawa , Akihiko Hidaka , Toshio Hiroe , Hideki Hayashi
IPC分类号： B05C3/04 , B05C3/09 , H01L21/687 , B05C3/00
CPC分类号： H01L21/68707 , B05C3/04 , B05C3/09
摘要： For processing semiconductor substrates in a processing fluid, the substrates are introduced into a processing bath in which the processing fluid is filled. For holding the substrates in the process of introducing them into the processing bath, a holder having a pair of holding rods end a pair of aiding rods is prepared. A periodical linear array of grooves is formed on each rod. The rims of substrates are inserted into respective corresponding grooves on the rods so that the substrates do not touch respective side walls of the grooves in the aiding rod.
摘要翻译：为了在处理流体中处理半导体衬底，将衬底引入到其中填充处理流体的处理槽中。为了在将基板引入处理槽的过程中保持基板，制备具有一对保持杆的保持器，该保持杆端接一对辅助杆。在每个杆上形成周期性的线形阵列。基板的边缘被插入到杆的相应的相应凹槽中，使得基板不接触辅助杆中的槽的相应侧壁。

3. 发明申请

US20110303242A1 SUBSTRATE TREATING METHOD 有权
标题翻译：基板处理方法
公开(公告)号：US20110303242A1
公开(公告)日：2011-12-15
申请号：US13178059
申请日：2011-07-07
申请人： Masahiro KIMURA , Hiroaki TAKAHASHI , Tadashi MAEGAWA , Toyohide HAYASHI
发明人： Masahiro KIMURA , Hiroaki TAKAHASHI , Tadashi MAEGAWA , Toyohide HAYASHI
IPC分类号： B08B3/14
CPC分类号： H01L21/67086 , H01L21/67057
摘要： A substrate treating method for treating substrates with a treating liquid includes a deionized water cleaning step for supplying deionized water from an injection pipe and cleaning the substrates inside a cleaning tank with deionized water, then a replacing step for injecting a solvent from a solvent injector and replacing the deionized water with the solvent, a separating and removing step for switching a channel to a branch pipe and causing a separator to remove the deionized water from the treating liquid, and an adsorbing and removing step for switching the channel to another branch pipe and causing a deionized water remover to adsorb and remove the deionized water from the treating liquid.
摘要翻译：用处理液处理基板的基板处理方法包括：去离子水清洗步骤，用于从注入管供给去离子水，并用去离子水清洗清洗槽内的基板，然后用溶剂注入器注入溶剂的替换步骤;以及用溶剂代替去离子水，分离和去除步骤，用于将通道切换到分支管并使分离器从处理液中除去去离子水;以及吸附和去除步骤，用于将通道切换到另一分支管，以及使去离子水去除剂从处理液中吸附并除去去离子水。

4. 发明申请

US20130052360A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND NOZZLE 审中-公开
标题翻译：基板加工装置，基板加工方法和喷嘴
公开(公告)号：US20130052360A1
公开(公告)日：2013-02-28
申请号：US13527803
申请日：2012-06-20
申请人： Tadashi MAEGAWA , Hiroyuki ARAKI
发明人： Tadashi MAEGAWA , Hiroyuki ARAKI
IPC分类号： B05C5/00 , B05D1/02 , B05B1/00 , B05C11/00
CPC分类号： B05B1/02 , B05B3/02 , B05B13/0228 , B05B17/0607 , B05C11/08 , H01L21/67051 , H01L21/6715
摘要： A substrate processing apparatus includes a substrate holding unit that holds a substrate, an injection unit that injects droplets of a processing liquid from a plurality of injection ports respectively toward a plurality of collision positions within a principal surface of the substrate held by the substrate holding unit, and a liquid film forming unit. The liquid film forming unit discharges a protective liquid from a plurality of discharge ports respectively toward a plurality of liquid contact positions within the principal surface of the substrate held by the substrate holding unit to form a plurality of liquid films of the protective liquid that respectively cover different collision positions.
摘要翻译：基板处理装置包括：保持基板的基板保持单元;注入单元，其将多个注入口的处理液的液滴分别朝向由基板保持单元保持的基板的主表面内的多个碰撞位置和液膜形成单元。所述液膜形成单元将多个排出口的保护液分别朝向由所述基板保持单元保持的所述基板的主表面内的多个液体接触位置排出，以形成分别覆盖的所述保护液的多个液膜不同的碰撞位置。

5. 发明申请

US20080236639A1 SUBSTRATE TREATING APPARATUS 审中-公开
标题翻译：基板处理装置
公开(公告)号：US20080236639A1
公开(公告)日：2008-10-02
申请号：US12053922
申请日：2008-03-24
申请人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
发明人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
IPC分类号： B08B3/08 , B08B3/12
CPC分类号： H01L21/67086 , H01L21/67057
摘要： A substrate treating apparatus for treating substrates with a treating liquid includes a treating tank having an inner tank for storing the treating liquid, and an outer tank for collecting the treating liquid overflowing the inner tank. A supply pipe interconnects the inner tank and the outer tank for circulating the treating liquid. A first branch pipe is shunted from the supply pipe, and a separator is mounted on the first branch pipe for separating deionized water and a solvent in the treating liquid, and discharging the deionized water. A second branch pipe interconnects positions upstream and downstream of the separator, and a deionized water remover is mounted on the second branch pipe for adsorbing and removing deionized water from the treating liquid. An injection pipe is connected to the supply pipe for injecting deionized water in a position downstream of the separator. A solvent injector injects the solvent into the injection pipe. A controller carries out a deionized water cleaning process for supplying deionized water from the injection pipe and cleaning the substrates inside the cleaning tank with deionized water, then a replacing process for injecting the solvent from the solvent injector and replacing the deionized water with the solvent, a separating and removing process for switching to the first branch pipe and causing the separator to remove the deionized water from the treating liquid, and an adsorbing and removing process for switching to the second branch pipe and causing the deionized water remover to adsorb and remove the deionized water from the treating liquid.
摘要翻译：用处理液处理基板的基板处理装置包括具有用于储存处理液的内罐的处理槽和用于收集溢出内罐的处理液的外罐。供给管将内罐和外罐相互连接，以使处理液循环。第一分支管从供给管分流，分离器安装在第一支管上，用于分离处理液中的去离子水和溶剂，并排出去离子水。第二分支管将分离器的上游和下游的位置相互连接，并且去离子水去除器安装在第二分支管上，用于从处理液中吸附和去除去离子水。喷射管连接到供给管，用于在分离器的下游位置喷射去离子水。溶剂注入器将溶剂注入注射管中。控制器执行去离子水清洗工艺，用于从注射管中提供去离子水，并用去离子水清洗清洗槽内的基材，然后用溶剂注入器中的溶剂注入和用溶剂代替去离子水的替换过程，用于切换到第一分支管并使分离器从处理液中除去去离子水的分离和去除过程，以及用于切换到第二分支管并使去离子水去除剂吸附和去除来自处理液体的去离子水。

6. 发明授权

US07422681B2 Substrate treating apparatus 有权
标题翻译：底物处理装置
公开(公告)号：US07422681B2
公开(公告)日：2008-09-09
申请号：US11121519
申请日：2005-05-04
申请人： Toshio Hiroe , Tadashi Maegawa , Yoshitaka Abiko , Akira Morita
发明人： Toshio Hiroe , Tadashi Maegawa , Yoshitaka Abiko , Akira Morita
IPC分类号： B01J19/12 , B08B3/14
CPC分类号： C02F1/325 , C02F1/004 , C02F1/38 , C02F2103/346 , C02F2201/3227 , Y10S134/902
摘要： A substrate treating apparatus for treating substrates having a film coating. The apparatus includes a treating unit for treating the substrates with a treating solution, a drain pipe for draining the treating solution from the treating unit, a filter mounted on the drain pipe, and an ultraviolet emitting unit for the filter for emitting ultraviolet light to the treating solution flowing through the filter.
摘要翻译：一种用于处理具有膜涂层的基板的基板处理装置。该设备包括用处理溶液处理基板的处理单元，用于从处理单元排出处理液的排水管，安装在排水管上的过滤器，以及用于向紫外线发射紫外线的紫外线发射单元处理溶液流过过滤器。

7. 发明授权

US08608864B2 Substrate treating method 有权
标题翻译：底物处理方法
公开(公告)号：US08608864B2
公开(公告)日：2013-12-17
申请号：US13178059
申请日：2011-07-07
申请人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
发明人： Masahiro Kimura , Hiroaki Takahashi , Tadashi Maegawa , Toyohide Hayashi
IPC分类号： B08B3/00 , B08B7/04 , B08B6/00
CPC分类号： H01L21/67086 , H01L21/67057
摘要： A substrate treating method for treating substrates with a treating liquid includes a deionized water cleaning step for supplying deionized water from an injection pipe and cleaning the substrates inside a cleaning tank with deionized water, then a replacing step for injecting a solvent from a solvent injector and replacing the deionized water with the solvent, a separating and removing step for switching a channel to a branch pipe and causing a separator to remove the deionized water from the treating liquid, and an adsorbing and removing step for switching the channel to another branch pipe and causing a deionized water remover to adsorb and remove the deionized water from the treating liquid.
摘要翻译：用处理液处理基板的基板处理方法包括：去离子水清洗步骤，用于从注入管供给去离子水，并用去离子水清洗清洗槽内的基板，然后用溶剂注入器注入溶剂的替换步骤;以及用溶剂代替去离子水，分离和去除步骤，用于将通道切换到分支管并使分离器从处理液中除去去离子水;以及吸附和去除步骤，用于将通道切换到另一分支管，以及使去离子水去除剂从处理液中吸附并除去去离子水。

8. 发明申请

US20090107522A1 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20090107522A1
公开(公告)日：2009-04-30
申请号：US12255132
申请日：2008-10-21
申请人： Hiroaki Uchida , Tadashi Maegawa , Seiji Ano
发明人： Hiroaki Uchida , Tadashi Maegawa , Seiji Ano
IPC分类号： C23G1/02 , H01L21/30
CPC分类号： H01L21/6708 , H01L21/67051
摘要： An inventive substrate treatment method is performed by a substrate treatment apparatus including a plate having an opposed surface to be kept in opposed spaced relation to one surface of a substrate for treating the substrate with a treatment liquid, and includes: a pre-supply liquid filling step of supplying a pre-supply liquid into a space defined between the one surface of the substrate and the plate through a spout which is provided in the opposed surface in opposed relation to the center of the substrate, and filling the space with the pre-supply liquid, the pre-supply liquid having a smaller contact angle with respect to the substrate and the plate than the treatment liquid; a treatment liquid replacing step of, after a liquid-filled state is established in the space filled with the pre-supply liquid, supplying the treatment liquid into the space to replace the pre-supply liquid present in the space with the treatment liquid while keeping the space in the liquid-filled state; and a treatment liquid contacting step of, after the replacement of the pre-supply liquid, filling the space with the treatment liquid to cause the treatment liquid to contact the one surface of the substrate.
摘要翻译：本发明的基板处理方法由基板处理装置进行，该基板处理装置包括具有相对表面的板，以与处理液处理基板的基板的一个表面保持相对间隔的关系，并且包括：预供给液体填充通过相对于基板的中心设置在相对的表面中的喷口将预供应液供给到在基板的一个表面和板之间限定的空间中的步骤，供给液体，预处理液体相比于处理液体相对于基板和板具有较小的接触角; 处理液体置换步骤，在填充有预供应液体的空间中建立液体填充状态之后，将处理液供给到空间中以用处理液替换存在于处理液体中的预供应液体，同时保持液体填充状态的空间; 以及处理液接触步骤，在更换所述预供应液体之后，用所述处理液填充所述空间，以使所述处理液体接触所述基板的所述一个表面。

9. 发明申请

US20060157197A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20060157197A1
公开(公告)日：2006-07-20
申请号：US11329014
申请日：2006-01-10
申请人： Tadashi Maegawa , Nobuharu Nagara
发明人： Tadashi Maegawa , Nobuharu Nagara
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/67253 , H01L21/67086
摘要： In liquid exchange processing for exchanging a processing liquid retained in a processing bath from pure water to sulfuric acid and controlling the exchanged sulfuric acid at a predetermined temperature, firstly, pure water is discharged from the processing bath and an external bath. Then, sulfuric acid is supplied from a supply nozzle into the external bath. Then, timing to start circulation processing for circulating sulfuric acid from the external bath to the processing bath, and timing to start temperature control of the processing liquid are determined according to the amount of sulfuric acid retained in the external bath, which amount is obtained from a detection result by a pressure sensor. Accordingly, the temperature control can be started before the supply from the supply nozzle is completed. This shortens the time required for the liquid exchange processing.
摘要翻译：在用于将保存在处理槽中的处理液从纯水更换为硫酸并将交换的硫酸控制在预定温度的液体交换处理中，首先，从处理槽和外部浴中排出纯水。然后，将硫酸从供给喷嘴供给到外部浴中。然后，根据外部浴中保留的硫酸的量来确定开始从外部浴向循环硫酸到处理槽的循环处理的定时和开始温度控制的定时，该量从通过压力传感器的检测结果。因此，可以在从供给喷嘴的供给完成之前开始温度控制。这缩短了液体交换处理所需的时间。

10. 发明申请

US20050258085A1 Substrate treating apparatus 有权
标题翻译：底物处理装置
公开(公告)号：US20050258085A1
公开(公告)日：2005-11-24
申请号：US11121519
申请日：2005-05-04
申请人： Toshio Hiroe , Tadashi Maegawa , Yoshitaka Abiko , Akira Morita
发明人： Toshio Hiroe , Tadashi Maegawa , Yoshitaka Abiko , Akira Morita
IPC分类号： C02F1/00 , C02F1/32 , C02F1/38
CPC分类号： C02F1/325 , C02F1/004 , C02F1/38 , C02F2103/346 , C02F2201/3227 , Y10S134/902
摘要： A substrate treating apparatus for treating substrates having a film coating. The apparatus includes a treating unit for treating the substrates with a treating solution, a drain pipe for draining the treating solution from the treating unit, a filter mounted on the drain pipe, and an ultraviolet emitting unit for the filter for emitting ultraviolet light to the treating solution flowing through the filter.
摘要翻译：一种用于处理具有膜涂层的基板的基板处理装置。该设备包括用处理溶液处理基板的处理单元，用于从处理单元排出处理液的排水管，安装在排水管上的过滤器，以及用于向紫外线发射紫外线的紫外线发射单元处理溶液流过过滤器。

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