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    • 4. 发明授权
    • Method for measuring substrate concentration and apparatus for measuring substrate concentration
    • 测量底物浓度的方法和测量底物浓度的装置
    • US08535510B2
    • 2013-09-17
    • US12450775
    • 2008-04-15
    • Tatsuo KamataTakeshi TakagiYuki Ito
    • Tatsuo KamataTakeshi TakagiYuki Ito
    • G01N27/327
    • C12Q1/001A61B5/14532A61B5/1486A61B5/1495A61B2560/0223
    • This invention provides a substrate concentration measuring method for measuring a concentration of a substrate included in a specimen based on an output for measurement from an enzyme electrode when the enzyme electrode and the substrate are reacted with each other, the substrate concentration is calculated using an output for correction from the enzyme electrode obtained when a reference solution whose substrate concentration is known and the enzyme electrode are reacted with each other before or after the enzyme electrode and the substrate are reacted with each other. For example, the output for correction is measured by each specimen. In this method, the substrate concentration may be calculated using the output for correction for the specimen to be measured and an output for correction corresponding to the at least one other specimen and measured prior to the output for correction.
    • 本发明提供一种基板浓度测量方法,用于当酶电极和基板彼此反应时,基于酶电极的测量输出测量样品中包含的基板的浓度,基板浓度使用输出 用于当酶底物浓度已知的参比溶液和酶电极在酶电极和底物之间彼此反应之前彼此反应的酶电极获得的酶电极校正。 例如,用于校正的输出由每个样本测量。 在该方法中,可以使用待测试样本的校正输出和与至少一个其他样本相对应的校正输出并在校正输出之前测量来计算衬底浓度。
    • 5. 发明申请
    • SUBSTRATE CONCENTRATION MEASUREMENT METHOD AND SUBSTRATE CONCENTRATION MEASUREMENT APPARATUS
    • 基板浓度测量方法和基板浓度测量装置
    • US20100299072A1
    • 2010-11-25
    • US12451085
    • 2008-04-25
    • Tatsuo KamataTakeshi TakagiYuki Ito
    • Tatsuo KamataTakeshi TakagiYuki Ito
    • G06F19/00G01N33/50
    • G01N27/3274G01N30/8606G01N33/5438G01N33/721G01N33/96G01N2030/146G01N2030/8411G01N2030/8822
    • This invention is a method for a substrate concentration measurement method including measuring a concentration of a substrate in a blood specimen containing hemoglobin. In the method, the substrate concentration is calculated by using a measurement value correlating with a substrate concentration influenced by hemoglobin, and a hemoglobin concentration or a value correlating with the hemoglobin concentration. A substrate concentration is calculated by correcting the measurement value Re correlating with the substrate concentration based on the following Formulae 1 and 2: [Formula 1] Corrected value=100×Re/V (%), wherein V (%) represents a value with respect to plasma (a ratio of a measurement value influenced by hemoglobin with respect to a measurement value obtained by measuring plasma), and Re represents the measurement value correlating with the substrate concentration influenced by hemoglobin; [Formula 2] Value with respect to plasma V (%)=(Vmax×Re)/(Km+Re)+B, wherein Vmax represents a value obtained by subtracting an intercept (B) from the value (V) with respect to plasma which is maintained constant even when the measurement value influenced by hemoglobin increases, Km represents a value of Re at which the value V (%) with respect to plasma becomes Vmax/2, and B represents a value (constant) of V (%) with respect to plasma when Re is 0.
    • 本发明是一种测定含有血红蛋白的血液标本中的基质浓度的基板浓度测定方法。 在该方法中,通过使用与受血红蛋白影响的底物浓度相关的测定值和血红蛋白浓度或与血红蛋白浓度相关的值来计算底物浓度。 通过基于以下公式1和2校正与底物浓度相关的测量值Re来计算底物浓度:[式1]校正值= 100×Re / V(%),其中V(%)表示与 对血浆的影响(由血红蛋白影响的测定值相对于通过测定血浆得到的测定值的比例),Re表示与由血红蛋白影响的底物浓度相关的测定值; [式2]相对于等离子体V(%)=(Vmax×Re)/(Km + Re)+ B的值,其中Vmax表示通过从相对于(V)的值(V)减去截距(B) 即使当受血红蛋白影响的测量值增加时,也保持恒定的等离子体,Km表示相对于等离子体的值V(%)为Vmax / 2的Re值,B表示V(%)的值(常数) )相对于等离子体。
    • 8. 发明申请
    • METHOD FOR MEASURING SUBSTRATE CONCENTRATION AND APPARATUS FOR MEASURING SUBSTRATE CONCENTRATION
    • 用于测量基板浓度的方法和用于测量基板浓度的装置
    • US20100288650A1
    • 2010-11-18
    • US12450775
    • 2008-04-15
    • Tatsuo KamataTakeshi TakagiYuki Ito
    • Tatsuo KamataTakeshi TakagiYuki Ito
    • G01N27/27
    • C12Q1/001A61B5/14532A61B5/1486A61B5/1495A61B2560/0223
    • This invention provides a substrate concentration measuring method for measuring a concentration of a substrate included in a specimen based on an output for measurement from an enzyme electrode when the enzyme electrode and the substrate are reacted with each other, the substrate concentration is calculated using an output for correction from the enzyme electrode obtained when a reference solution whose substrate concentration is known and the enzyme electrode are reacted with each other before or after the enzyme electrode and the substrate are reacted with each other. For example, the output for correction is measured by each specimen. In this method, the substrate concentration may be calculated using the output for correction for the specimen to be measured and an output for correction corresponding to the at least one other specimen and measured prior to the output for correction.
    • 本发明提供一种基板浓度测量方法,用于当酶电极和基板彼此反应时,基于酶电极的测量输出测量样品中包含的基板的浓度,基板浓度使用输出 用于当酶底物浓度已知的参比溶液和酶电极在酶电极和底物之间彼此反应之前彼此反应的酶电极获得的酶电极校正。 例如,用于校正的输出由每个样本测量。 在该方法中,可以使用待测试样本的校正输出和与至少一个其他样本相对应的校正输出并在校正输出之前测量来计算衬底浓度。
    • 10. 发明授权
    • Nonvolatile memory element comprising a resistance variable element and a diode
    • 非易失性存储元件包括电阻可变元件和二极管
    • US08796660B2
    • 2014-08-05
    • US12375881
    • 2007-09-21
    • Takeshi TakagiTakumi Mikawa
    • Takeshi TakagiTakumi Mikawa
    • H01L29/02H01L47/00H01L29/04H01L29/06H01L29/08H01L31/0352H01L45/00H01L27/24H01L27/10H01L21/00G11C11/00
    • H01L45/04H01L27/101H01L27/2409H01L27/2418H01L27/2463H01L45/1233H01L45/1273H01L45/146H01L45/1683
    • A nonvolatile memory element (20) of the present invention comprises a resistance variable element (14) and a diode (18) which are formed on a substrate (10) such that the resistance variable element (14) has a resistance variable layer (11) sandwiched between a lower electrode (12) and an upper electrode (13), and the diode (18) which is connected in series with the resistance variable element (14) in the laminating direction and has an insulating layer or semiconductor layer (15) sandwiched between a first electrode (16) at the lower side and a second electrode (17) at the upper side. The resistance variable layer (11) is embedded in a first contact hole (21) formed on the lower electrode (12). A first area (22) where insulating layer or semiconductor layer (15) of the diode (18) is in contact with a first electrode (16) of the diode (18) is larger than at least one of a second area (23) where the resistance variable layer (11) is in contact with the upper electrode (13) and a third area (24) where the resistance variable layer (11) is in contact with the lower electrode (12).
    • 本发明的非易失性存储元件(20)包括形成在基板(10)上的电阻可变元件(14)和二极管(18),使得电阻可变元件(14)具有电阻变化层(11 )和位于下电极(12)和上电极(13)之间的二极管(18),以及与电阻可变元件(14)在层叠方向上串联连接并具有绝缘层或半导体层(15)的二极管 )夹在下侧的第一电极(16)和上侧的第二电极(17)之间。 电阻变化层(11)嵌入形成在下电极(12)上的第一接触孔(21)中。 二极管(18)的绝缘层或半导体层(15)与二极管(18)的第一电极(16)接触的第一区域(22)大于第二区域(23)中的至少一个, 其中电阻变化层(11)与上电极(13)接触,电阻变化层(11)与下电极(12)接触的第三区域(24)。