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1. 发明授权

US08624214B2 Semiconductor device having a resistance variable element and a manufacturing method thereof 有权
标题翻译：具有电阻可变元件的半导体器件及其制造方法
公开(公告)号：US08624214B2
公开(公告)日：2014-01-07
申请号：US12866359
申请日：2009-06-08
申请人： Takumi Mikawa , Kazuhiko Shimakawa
发明人： Takumi Mikawa , Kazuhiko Shimakawa
IPC分类号： H01L29/02 , H01L47/00 , H01L21/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , H01L27/24
摘要： A semiconductor device (100) of the present invention has a structure in which an interlayer insulating layer (115) is formed on an uppermost wire (114), contacts (116, 117) penetrate the interlayer insulating layer (115), a lower electrode (118a) of the resistance variable element is formed on the interlayer insulating layer (115) to cover the contact (116), and resistance variable layer (119) is formed on the interlayer insulating layer (115) to cover the lower electrode (118a) and the contact (117). The contact (116) and the lower electrode (118a) serve as a first terminal, while the contact (117) serves as a second terminal.
摘要翻译：本发明的半导体器件（100）具有层间绝缘层（115）形成在最上层导线（114）上的结构，触点（116,117）穿过层间绝缘层（115），下电极在层间绝缘层（115）上形成电阻可变元件（118a）以覆盖触点（116），并且在层间绝缘层（115）上形成电阻变化层（119）以覆盖下电极（118a））和触点（117）。触点（116）和下电极（118a）用作第一端子，而触头（117）用作第二端子。

2. 发明授权

US08384061B2 Nonvolatile memory device and manufacturing method 有权
标题翻译：非易失存储器件及其制造方法
公开(公告)号：US08384061B2
公开(公告)日：2013-02-26
申请号：US12745190
申请日：2008-11-06
申请人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
发明人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
IPC分类号： H01L27/26 , H01L29/8605 , H01L21/02
CPC分类号： H01L27/2409 , G11C13/0002 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1683
摘要： A nonvolatile memory device of the present invention includes a substrate (1), first wires (3), first resistance variable elements (5) and lower electrodes (6) of first diode elements which are filled in first through-holes (4), respectively, second wires (11) which cross the first wires 3 perpendicularly to the first wires 3, respectively, and each of which includes a semiconductor layer (7) of a first diode elements, a conductive layer (8) and a semiconductor layer (10) of a second diode elements which are stacked together in this order, second resistance variable elements (16) and upper electrodes (14) of second diode elements which are filled into second through holes (13), respectively, and third wires (17), and the conductive layer (8) of each second wires (11) also serves as the upper electrode of the first diode elements (9) and the lower electrode of the second diode elements (15).
摘要翻译：本发明的非易失性存储器件包括填充在第一通孔（4）中的基片（1），第一布线（3），第一电阻可变元件（5）和第一二极管元件的下电极（6）分别与第一布线3分别垂直于第一布线3交叉的第二布线（11），每条布线包括第一二极管元件的半导体层（7），导电层（8）和半导体层（ 10）分别被填充到第二通孔（13）中的第二电阻可变元件（16）和第二二极管元件的上电极（14）以及第三电线（17）），并且每个第二布线（11）的导电层（8）也用作第一二极管元件（9）的上电极和第二二极管元件（15）的下电极。

3. 发明申请

US20100264393A1 NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100264393A1
公开(公告)日：2010-10-21
申请号：US12747060
申请日：2008-12-02
申请人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
发明人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device of the present invention comprises a substrate (1), first wires (3), first filling constituents (5) filled into first through-holes (4), respectively, second wires (11) which cross the first wires (3) perpendicularly to the first wires (3), respectively, each of the second wires (11) including a plurality of layers including a resistance variable layer (6) of each of first resistance variable elements, a conductive layer (7) and a resistance variable layer (8) of each of second resistance variable elements which are stacked together in this order, second filling constituents (14) filled into second through-holes (13), respectively, and third wires (15), and the conductive layer (7) of the second wires (11) serves as the electrodes of the first resistance variable elements (9) and the electrodes of the second resistance variable elements (10).
摘要翻译：本发明的非易失性存储装置包括基板（1），第一布线（3），分别填充到第一通孔（4）中的第一填充构件（5），分别穿过第一布线 3）分别垂直于第一导线（3），每个第二导线（11）包括多个层，包括第一电阻可变元件中的每一个的电阻变化层（6），导电层（7）和按顺序堆叠在一起的第二电阻可变元件的电阻变化层（8），分别填充到第二通孔（13）中的第二填充组分（14）和第三导线（15），以及导电层第二电线（11）的电极（7）用作第一电阻可变元件（9）的电极和第二电阻可变元件（10）的电极。

4. 发明授权

US08198618B2 Nonvolatile memory device and manufacturing method thereof 有权
标题翻译：非易失存储器件及其制造方法
公开(公告)号：US08198618B2
公开(公告)日：2012-06-12
申请号：US12747060
申请日：2008-12-02
申请人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
发明人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device of the present invention comprises a substrate (1), first wires (3), first filling constituents (5) filled into first through-holes (4), respectively, second wires (11) which cross the first wires (3) perpendicularly to the first wires (3), respectively, each of the second wires (11) including a plurality of layers including a resistance variable layer (6) of each of first resistance variable elements, a conductive layer (7) and a resistance variable layer (8) of each of second resistance variable elements which are stacked together in this order, second filling constituents (14) filled into second through-holes (13), respectively, and third wires (15), and the conductive layer (7) of the second wires (11) serves as the electrodes of the first resistance variable elements (9) and the electrodes of the second resistance variable elements (10).
摘要翻译：本发明的非易失性存储装置包括基板（1），第一布线（3），分别填充到第一通孔（4）中的第一填充构件（5），分别穿过第一布线 3）分别垂直于第一导线（3），每个第二导线（11）包括多个层，包括第一电阻可变元件中的每一个的电阻变化层（6），导电层（7）和按顺序堆叠在一起的第二电阻可变元件的电阻变化层（8），分别填充到第二通孔（13）中的第二填充组分（14）和第三导线（15），以及导电层第二电线（11）的电极（7）用作第一电阻可变元件（9）的电极和第二电阻可变元件（10）的电极。

5. 发明申请

US20100321095A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND SYSTEM 有权
标题翻译：半导体器件，半导体器件的制造方法，半导体芯片和系统
公开(公告)号：US20100321095A1
公开(公告)日：2010-12-23
申请号：US12866359
申请日：2009-06-08
申请人： Takumi Mikawa , Kazuhiko Shimakawa
发明人： Takumi Mikawa , Kazuhiko Shimakawa
IPC分类号： H01H85/00 , H01L45/00 , H01L21/02
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , H01L27/24
摘要： A semiconductor device (100) of the present invention has a structure in which an interlayer insulating layer (115) is formed on an uppermost wire (114), contacts (116, 117) penetrate the interlayer insulating layer (115), a lower electrode (118a) of the resistance variable element is formed on the interlayer insulating layer (115) to cover the contact (116), and resistance variable layer (119) is formed on the interlayer insulating layer (115) to cover the lower electrode (118a) and the contact (117). The contact (116) and the lower electrode (118a) serve as a first terminal, while the contact (117) serves as a second terminal.
摘要翻译：本发明的半导体器件（100）具有层间绝缘层（115）形成在最上层导线（114）上的结构，触点（116,117）穿过层间绝缘层（115），下电极在层间绝缘层（115）上形成电阻可变元件（118a）以覆盖触点（116），并且在层间绝缘层（115）上形成电阻变化层（119）以覆盖下电极（118a））和触点（117）。触点（116）和下电极（118a）用作第一端子，而触头（117）用作第二端子。

6. 发明申请

US20100258779A1 NONVOLATILE MEMORY DEVICE AND MANUFACTURING MEHTOD THEREOF 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100258779A1
公开(公告)日：2010-10-14
申请号：US12745190
申请日：2008-11-06
申请人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
发明人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L27/2409 , G11C13/0002 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1683
摘要： A nonvolatile memory device of the present invention includes a substrate (1), first wires (3), first resistance variable elements (5) and lower electrodes (6) of first diode elements which are filled in first through-holes (4), respectively, second wires (11) which cross the first wires 3 perpendicularly to the first wires 3, respectively, and each of which includes a semiconductor layer (7) of a first diode elements, a conductive layer (8) and a semiconductor layer (10) of a second diode elements which are stacked together in this order, second resistance variable elements (16) and upper electrodes (14) of second diode elements which are filled into second through holes (13), respectively, and third wires (17), and the conductive layer (8) of each second wires (11) also serves as the upper electrode of the first diode elements (9) and the lower electrode of the second diode elements (15).
摘要翻译：本发明的非易失性存储器件包括填充在第一通孔（4）中的基片（1），第一布线（3），第一电阻可变元件（5）和第一二极管元件的下电极（6）分别与第一布线3分别垂直于第一布线3交叉的第二布线（11），每条布线包括第一二极管元件的半导体层（7），导电层（8）和半导体层（ 10）分别被填充到第二通孔（13）中的第二电阻可变元件（16）和第二二极管元件的上电极（14）以及第三电线（17）），并且每个第二布线（11）的导电层（8）也用作第一二极管元件（9）的上电极和第二二极管元件（15）的下电极。

7. 发明授权

US09252189B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储元件，非易失性半导体存储器件以及用于制造非易失性半导体存储器件的方法
公开(公告)号：US09252189B2
公开(公告)日：2016-02-02
申请号：US13996203
申请日：2012-06-18
申请人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
发明人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
IPC分类号： H01L27/24 , H01L45/00 , H01L29/66 , H01L29/872 , H01L27/22
CPC分类号： H01L27/2409 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first current steering layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second current steering layer which covers side surfaces of the first current steering element electrode, the first current steering layer, and the second current steering element electrode.
摘要翻译：非易失性半导体存储元件包括：可变电阻元件，包括第一电极，可变电阻层和第二电极，并且具有根据施加在第一电极和第二电极之间的电脉冲的极性而变化的电阻值 ; 并且电连接到可变电阻元件的电流导向元件允许电流双向流动，并且具有非线性电流 - 电压特性。当前的操舵元件（i）具有第一电流导向元件电极，第一电流导向层和第二电流操舵元件电极按此顺序堆叠的结构，（ⅱ）包括覆盖第一电流操舵元件电极，第一电流导向层和第二电流导向元件电极的侧面。

8. 发明授权

US09000506B2 Variable resistance nonvolatile memory element and method for manufacturing the same 有权
标题翻译：可变电阻非易失性存储元件及其制造方法
公开(公告)号：US09000506B2
公开(公告)日：2015-04-07
申请号：US13501624
申请日：2011-11-18
申请人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
发明人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
IPC分类号： H01L27/108 , H01L45/00 , H01L27/24
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1675
摘要： A nonvolatile memory element which inhibits deterioration of an oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element are provided. The nonvolatile memory element includes a first electrode layer formed above a substrate, a variable resistance layer disposed on the first electrode layer, and a second electrode layer disposed on the variable resistance layer, and the variable resistance layer has a two-layer structure in which an oxygen- and/or nitrogen-deficient tantalum oxynitride layer and a tantalum oxide layer are stacked.
摘要翻译：提供一种非易失性存储元件，其抑制由于热预算导致的可变电阻层的氧浓度分布的劣化，并能够在低电压下稳定地工作，并且提供了一种制造非易失性存储元件的方法。非易失性存储元件包括形成在基板上的第一电极层，设置在第一电极层上的可变电阻层和设置在可变电阻层上的第二电极层，可变电阻层具有两层结构，其中氧和/或氮缺乏的氮氧化钽层和氧化钽层被堆叠。

9. 发明授权

US08796660B2 Nonvolatile memory element comprising a resistance variable element and a diode 有权
标题翻译：非易失性存储元件包括电阻可变元件和二极管
公开(公告)号：US08796660B2
公开(公告)日：2014-08-05
申请号：US12375881
申请日：2007-09-21
申请人： Takeshi Takagi , Takumi Mikawa
发明人： Takeshi Takagi , Takumi Mikawa
IPC分类号： H01L29/02 , H01L47/00 , H01L29/04 , H01L29/06 , H01L29/08 , H01L31/0352 , H01L45/00 , H01L27/24 , H01L27/10 , H01L21/00 , G11C11/00
CPC分类号： H01L45/04 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1683
摘要： A nonvolatile memory element (20) of the present invention comprises a resistance variable element (14) and a diode (18) which are formed on a substrate (10) such that the resistance variable element (14) has a resistance variable layer (11) sandwiched between a lower electrode (12) and an upper electrode (13), and the diode (18) which is connected in series with the resistance variable element (14) in the laminating direction and has an insulating layer or semiconductor layer (15) sandwiched between a first electrode (16) at the lower side and a second electrode (17) at the upper side. The resistance variable layer (11) is embedded in a first contact hole (21) formed on the lower electrode (12). A first area (22) where insulating layer or semiconductor layer (15) of the diode (18) is in contact with a first electrode (16) of the diode (18) is larger than at least one of a second area (23) where the resistance variable layer (11) is in contact with the upper electrode (13) and a third area (24) where the resistance variable layer (11) is in contact with the lower electrode (12).
摘要翻译：本发明的非易失性存储元件（20）包括形成在基板（10）上的电阻可变元件（14）和二极管（18），使得电阻可变元件（14）具有电阻变化层（11 ）和位于下电极（12）和上电极（13）之间的二极管（18），以及与电阻可变元件（14）在层叠方向上串联连接并具有绝缘层或半导体层（15）的二极管）夹在下侧的第一电极（16）和上侧的第二电极（17）之间。电阻变化层（11）嵌入形成在下电极（12）上的第一接触孔（21）中。二极管（18）的绝缘层或半导体层（15）与二极管（18）的第一电极（16）接触的第一区域（22）大于第二区域（23）中的至少一个，其中电阻变化层（11）与上电极（13）接触，电阻变化层（11）与下电极（12）接触的第三区域（24）。

10. 发明申请

US20140197368A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD, AND NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD 有权
标题翻译：非易失性存储器元件，非易失性存储器件，非易失性存储元件制造方法和非易失性存储器件制造方法
公开(公告)号：US20140197368A1
公开(公告)日：2014-07-17
申请号：US14343441
申请日：2012-09-10
申请人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
发明人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
IPC分类号： H01L45/00
CPC分类号： H01L45/124 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.
摘要翻译：一种非易失性存储元件，包括：第一电极; 第二电极; 在第一电极和第二电极之间的可变电阻层，并且包括作为堆叠层的连接到第一电极的第一可变电阻层和连接到第二电极的第二可变电阻层; 以及具有阻氧性并覆盖可变电阻层的侧面的侧壁保护层。第一可变电阻层包括形成在第一金属氧化物周围的第一金属氧化物和第三金属氧化物，其氧缺陷低于第一金属氧化物，第二可变电阻层包括具有氧缺乏的第二金属氧化物低于第一金属氧化物。

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