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1. 发明授权

US08779430B2 Semiconductor device, active matrix substrate, and display device 有权
标题翻译：半导体器件，有源矩阵基板和显示器件
公开(公告)号：US08779430B2
公开(公告)日：2014-07-15
申请号：US13696623
申请日：2011-04-27
申请人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
发明人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
IPC分类号： H01L29/04 , H01L29/10 , H01L29/15 , H01L31/00 , H01L31/036 , H01L29/786 , G02F1/1368 , H01L29/423 , H01L29/417 , G02F1/1362
CPC分类号： H01L29/78696 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L29/41733 , H01L29/42384
摘要： A semiconductor device (18) includes: a gate electrode (102) formed on a substrate (101); a semiconductor layer (104) formed above the gate electrode (102) and including a source region, a drain region, and a channel region; a source electrode (106) connected to the source region above the semiconductor layer (104); and a drain electrode (107) connected to the drain region above the semiconductor layer (104). The semiconductor layer (104) has, at a portion overlapping the drain electrode (107), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (107). At an outside of the channel region sandwiched between the drain electrode (107) and the source electrode (106), the semiconductor layer (104) has an adjustment portion where an outer boundary of the semiconductor layer (104) is positioned more inward than an outer boundary of the gate electrode (102).
摘要翻译：半导体器件（18）包括：形成在衬底（101）上的栅极（102）; 形成在栅电极（102）上方并包括源极区，漏极区和沟道区的半导体层（104）与所述半导体层（104）上方的源极区域连接的源电极（106）。以及连接到半导体层（104）上方的漏极区的漏电极（107）。半导体层（104）在与漏电极（107）重叠的部分处具有沿着从漏电极（107）引出的漏极线的延伸方向向外突出的突起。在夹在漏电极（107）和源电极（106）之间的沟道区域的外部，半导体层（104）具有调整部分，其中半导体层（104）的外边界位于栅电极（102）的外边界。

2. 发明申请

US20130102115A1 METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE 审中-公开
标题翻译：制造有源矩阵衬底的方法
公开(公告)号：US20130102115A1
公开(公告)日：2013-04-25
申请号：US13806964
申请日：2011-07-01
申请人： Takeshi Yaneda , Hiromitsu Katsui , Wataru Nakamura
发明人： Takeshi Yaneda , Hiromitsu Katsui , Wataru Nakamura
IPC分类号： H01L29/66
CPC分类号： H01L29/66742 , H01L27/124 , H01L27/1288
摘要： The disclosed method for manufacturing an active matrix substrate includes a step in which a first mask is used to pattern a first conductive layer G, CS, and S, a step in which a second mask is used to pattern a first insulating layer, a step in which a third mask is used to pattern a semiconductor layer, a step in which a fourth mask is used to pattern a second conductive later, a step in which a fifth mask is used to pattern a second insulating layer, and a step in which a sixth mask is used to pattern a third conductive layer.
摘要翻译：所公开的制造有源矩阵基板的方法包括以下步骤：第一掩模用于对第一导电层G，CS和S进行图案化，其中使用第二掩模来对第一绝缘层进行图案化的步骤，步骤其中使用第三掩模来对半导体层进行图案化，其中第四掩模用于稍后对第二导电图案化的步骤，使用第五掩模来对第二绝缘层进行图案化的步骤，以及其中使用第六掩模来图案化第三导电层。

3. 发明申请

US20130048999A1 SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE 有权
标题翻译：半导体器件，有源矩阵衬底和显示器件
公开(公告)号：US20130048999A1
公开(公告)日：2013-02-28
申请号：US13696623
申请日：2011-04-27
申请人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
发明人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
IPC分类号： H01L33/08
CPC分类号： H01L29/78696 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L29/41733 , H01L29/42384
摘要： A semiconductor device (18) includes: a gate electrode (102) formed on a substrate (101); a semiconductor layer (104) formed above the gate electrode (102) and including a source region, a drain region, and a channel region; a source electrode (106) connected to the source region above the semiconductor layer (104); and a drain electrode (107) connected to the drain region above the semiconductor layer (104). The semiconductor layer (104) has, at a portion overlapping the drain electrode (107), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (107). At an outside of the channel region sandwiched between the drain electrode (107) and the source electrode (106), the semiconductor layer (104) has an adjustment portion where an outer boundary of the semiconductor layer (104) is positioned more inward than an outer boundary of the gate electrode (102).
摘要翻译：半导体器件（18）包括：形成在衬底（101）上的栅极（102）; 形成在栅电极（102）上方并包括源极区，漏极区和沟道区的半导体层（104）与所述半导体层（104）上方的源极区域连接的源电极（106）。以及连接到半导体层（104）上方的漏极区的漏极（107）。半导体层（104）在与漏电极（107）重叠的部分处具有沿着从漏电极（107）引出的漏极线的延伸方向向外突出的突起。在夹在漏电极（107）和源电极（106）之间的沟道区域的外部，半导体层（104）具有调整部分，其中半导体层（104）的外边界位于比第栅电极（102）的外边界。

4. 发明申请

US20120248450A1 ACTIVE MATRIX SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US20120248450A1
公开(公告)日：2012-10-04
申请号：US13513643
申请日：2010-11-02
申请人： Takeshi Yaneda , Hiromitsu Katsui , Wataru Nakamura
发明人： Takeshi Yaneda , Hiromitsu Katsui , Wataru Nakamura
IPC分类号： H01L29/786 , H01L21/336 , H01L21/44
CPC分类号： H01L27/12 , G02F1/13458 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L27/124 , H01L27/1248 , H01L29/4908
摘要： The present invention provides an active matrix substrate that is capable of reliably connecting a plurality of conductive layers that are arranged with an insulating layer therebetween. The active matrix substrate of the present invention has a first conductive layer (CS) and a second conductive layer (30), and an insulating layer (22) formed to cover the first conductive layer (CS) is provided. The first conductive layer (CS) has an end portion (CS1) formed to protrude within an opening portion (H1) formed in the insulating layer (22), and the second conductive layer (30) is provided to cover at least a part of the edge of the opening portion (H1) and to be connected directly to the end portion (CS1) of the first conductive layer (CS) within the opening portion (H1).
摘要翻译：本发明提供一种有源矩阵基板，其能够可靠地连接其间具有绝缘层的多个导电层。本发明的有源矩阵基板具有第一导电层（CS）和第二导电层（30），并且形成为覆盖第一导电层（CS）的绝缘层（22）。第一导电层（CS）具有形成为在形成在绝缘层（22）中的开口部分（H1）内突出的端部（CS1），并且第二导电层（30）设置成覆盖至少部分开口部分（H1）的边缘并且直接连接到开口部分（H1）内的第一导电层（CS）的端部（CS1）。

5. 发明授权

US08779296B2 Wiring board, method for manufacturing same, display panel, and display device 有权
标题翻译：接线板，制造方法，显示面板和显示装置
公开(公告)号：US08779296B2
公开(公告)日：2014-07-15
申请号：US13386685
申请日：2010-05-18
申请人： Hiromitsu Katsui , Kenichi Kitoh , Wataru Nakamura
发明人： Hiromitsu Katsui , Kenichi Kitoh , Wataru Nakamura
IPC分类号： H05K1/09 , G02F1/1362 , H05K1/00 , H05K1/03 , H05K1/11 , H05K1/18 , H05K1/16 , G02F1/1333 , G02F1/1343 , H01L27/32 , G02F1/1345
CPC分类号： H01L27/3276 , G02F1/1345 , G02F1/136286 , H01L27/3258
摘要： A wiring board is provided which can prevent a metal electrode from corroding due to a defect in a transparent conductive electrode covering an end face of an organic insulating film. An active-matrix substrate includes: a glass substrate; a metal wire provided on the glass substrate; a gate insulating film covering the metal wire; an interlayer insulating film covering the gate insulating film; and a transparent electrode formed on the interlayer insulating film. The scanning wire provided with a terminal area where the transparent electrode is laminated directly on the scanning wire. The transparent electrode extends over the terminal area in such a way as to cover an end face of the interlayer insulating film that faces the terminal area and an end face of the gate insulating film that faces the terminal area.
摘要翻译：提供一种布线板，其能够防止金属电极由于覆盖有机绝缘膜的端面的透明导电电极的缺陷而腐蚀。有源矩阵基板包括：玻璃基板; 设置在玻璃基板上的金属线; 覆盖金属线的栅极绝缘膜; 覆盖所述栅极绝缘膜的层间绝缘膜; 以及形成在层间绝缘膜上的透明电极。扫描线设置有透明电极直接层叠在扫描线上的端子区域。透明电极以覆盖面向端子区域的端子区域和栅极绝缘膜的端面的层间绝缘膜的端面的方式延伸在端子区域上。

6. 发明授权

US08405808B2 Active matrix substrate and display unit provided with it 有权
标题翻译：提供有源矩阵基板和显示单元
公开(公告)号：US08405808B2
公开(公告)日：2013-03-26
申请号：US12946000
申请日：2010-11-15
申请人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
发明人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
IPC分类号： G02F1/1333
CPC分类号： G02F1/136227 , G02F1/136286
摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.
摘要翻译：有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压堆栈区域。有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

7. 发明申请

US20130009160A1 ACTIVE MATRIX SUBSTRATE 审中-公开
标题翻译：主动矩阵基板
公开(公告)号：US20130009160A1
公开(公告)日：2013-01-10
申请号：US13635200
申请日：2010-12-07
申请人： Hiromitsu Katsui , Wataru Nakamura , Kenichi Kitoh
发明人： Hiromitsu Katsui , Wataru Nakamura , Kenichi Kitoh
IPC分类号： H01L27/15
CPC分类号： H01L27/1248 , G02F1/136227 , G02F1/136286 , H01L27/1244
摘要： Disposed on an insulating substrate (10a) are a plurality of TFTs arranged in a matrix, each including a drain electrode (18b) in which a first conductive layer (16b) and a second conductive layer (17bb) are laminated in this order; an interlayer insulating film (21) deposited on each of the TFTs, in which a plurality of contact holes (21a) reaching to the respective drain electrodes (18b) are formed; and a plurality of pixel electrodes (22a) disposed on the interlayer insulating film (21) in a matrix, each connected to a corresponding drain electrode (18b) via a corresponding contact hole (21a), being susceptible to an electric corrosion reaction with the second conductive layer (17bb). At a side of the drain electrode, which is connected to the pixel electrode (22a), a top surface of the first conductive layer (16b) is exposed from the second conductive layer (17bb). The interlayer insulating film (21) is disposed to cover the second conductive layer (17bb).
摘要翻译：设置在绝缘基板（10a）上的是排列成矩阵状的多个TFT，每个TFT依次层叠有第一导电层（16b）和第二导电层（17bb），漏电极（18b）沉积在每个TFT上的层间绝缘膜（21），其中形成到达各个漏电极（18b）的多个接触孔（21a）; 以及以矩阵形式设置在所述层间绝缘膜（21）上的多个像素电极（22a），每个像素电极通过相应的接触孔（21a）连接到相应的漏极电极（18b），所述接触孔易受到与第二导电层（17bb）。在与像素电极（22a）连接的漏电极的一侧，第一导电层（16b）的顶表面从第二导电层（17bb）露出。层间绝缘膜（21）设置成覆盖第二导电层（17bb）。

8. 发明授权

US08729612B2 Active matrix substrate and method for manufacturing the same 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US08729612B2
公开(公告)日：2014-05-20
申请号：US13515571
申请日：2010-12-07
申请人： Hiromitsu Katsui , Wataru Nakamura
发明人： Hiromitsu Katsui , Wataru Nakamura
IPC分类号： H01L31/062
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F2001/133357 , G02F2001/136231 , G02F2001/136236 , G02F2001/13629 , G02F2001/136295 , G02F2202/38 , G02F2203/60 , H01L27/1225 , H01L27/124 , H01L27/1248
摘要： An active matrix substrate includes a plurality of scanning lines (11a) extending parallel to each other; a plurality of signal lines (16a) extending parallel to each other in a direction crossing the scanning lines (11a); a plurality of TFTs (5) each provided at each of intersections of the scanning lines (11a) and the signal lines (16a), and each including a semiconductor layer (4a); and a coating type insulating layer formed between each of the scanning lines (11a) and each of the signal lines (16a). A plurality of openings (15a) are formed in the insulating layer such that each of the semiconductor layers (4a) is exposed, and at least part of a peripheral end of the opening (15a) of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers (4a).
摘要翻译：有源矩阵基板包括彼此平行延伸的多条扫描线（11a）; 沿着与扫描线（11a）交叉的方向彼此平行地延伸的多条信号线（16a）。分别设置在扫描线（11a）和信号线（16a）的各交叉点的多个TFT（5），并且各包含半导体层（4a）。以及形成在每条扫描线（11a）和每条信号线（16a）之间的涂层型绝缘层。在绝缘层中形成多个开口（15a），使得每个半导体层（4a）露出，并且绝缘层的开口（15a）的外周端的至少一部分位于内侧相对于半导体层（4a）的每个外围端部。

9. 发明申请

US20140014952A1 ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE 有权
标题翻译：主动矩阵基板，显示面板和显示设备
公开(公告)号：US20140014952A1
公开(公告)日：2014-01-16
申请号：US13983655
申请日：2012-01-31
申请人： Hiromitsu Katsui , Yoshimasa Chikama , Wataru Nakamura , Tetsunori Tanaka , Kenichi Kitoh
发明人： Hiromitsu Katsui , Yoshimasa Chikama , Wataru Nakamura , Tetsunori Tanaka , Kenichi Kitoh
IPC分类号： H01L27/12
CPC分类号： H01L27/1244 , G02F1/1368 , H01L29/41733 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： A drain electrode (17) includes (i) a lower drain electrode (17a) stacked on a semiconductor layer (14) so as to partially cover an upper surface of the semiconductor layer (14) and (ii) an upper drain electrode (17b). The semiconductor layer (14), the lower drain electrode (17a), and the upper drain electrode (17b) form steps. In a step part where the steps are formed, a distance between a periphery of the lower drain electrode (17a) and a periphery of the upper drain electrode (17b) is more than 0.4 μm but less than 1.5 μm.
摘要翻译：漏电极（17）包括：（i）层叠在半导体层（14）上的下漏电极（17a），以部分地覆盖半导体层（14）的上表面，以及（ii）上漏电极（17b））。半导体层（14），下漏电极（17a）和上漏电极（17b）形成台阶。在形成台阶的台阶部分中，下漏电极（17a）的周边与上漏电极（17b）的周边之间的距离大于0.4μm，小于1.5μm。

10. 发明授权

US07864281B2 Active matrix substrate and display unit provided with it 有权
标题翻译：提供有源矩阵基板和显示单元
公开(公告)号：US07864281B2
公开(公告)日：2011-01-04
申请号：US11574087
申请日：2005-08-23
申请人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
发明人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
IPC分类号： G02F1/1333
CPC分类号： G02F1/136227 , G02F1/136286
摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.
摘要翻译：有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压堆栈区域。有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

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