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1. 发明申请

US20140014952A1 ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE 有权
标题翻译：主动矩阵基板，显示面板和显示设备
公开(公告)号：US20140014952A1
公开(公告)日：2014-01-16
申请号：US13983655
申请日：2012-01-31
申请人： Hiromitsu Katsui , Yoshimasa Chikama , Wataru Nakamura , Tetsunori Tanaka , Kenichi Kitoh
发明人： Hiromitsu Katsui , Yoshimasa Chikama , Wataru Nakamura , Tetsunori Tanaka , Kenichi Kitoh
IPC分类号： H01L27/12
CPC分类号： H01L27/1244 , G02F1/1368 , H01L29/41733 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： A drain electrode (17) includes (i) a lower drain electrode (17a) stacked on a semiconductor layer (14) so as to partially cover an upper surface of the semiconductor layer (14) and (ii) an upper drain electrode (17b). The semiconductor layer (14), the lower drain electrode (17a), and the upper drain electrode (17b) form steps. In a step part where the steps are formed, a distance between a periphery of the lower drain electrode (17a) and a periphery of the upper drain electrode (17b) is more than 0.4 μm but less than 1.5 μm.
摘要翻译：漏电极（17）包括：（i）层叠在半导体层（14）上的下漏电极（17a），以部分地覆盖半导体层（14）的上表面，以及（ii）上漏电极（17b））。半导体层（14），下漏电极（17a）和上漏电极（17b）形成台阶。在形成台阶的台阶部分中，下漏电极（17a）的周边与上漏电极（17b）的周边之间的距离大于0.4μm，小于1.5μm。

2. 发明授权

US09070600B2 Active matrix substrate, display panel, and display device 有权
标题翻译：有源矩阵基板，显示面板和显示设备
公开(公告)号：US09070600B2
公开(公告)日：2015-06-30
申请号：US13983655
申请日：2012-01-31
申请人： Hiromitsu Katsui , Yoshimasa Chikama , Wataru Nakamura , Tetsunori Tanaka , Kenichi Kitoh
发明人： Hiromitsu Katsui , Yoshimasa Chikama , Wataru Nakamura , Tetsunori Tanaka , Kenichi Kitoh
IPC分类号： H01L29/12 , H01L27/12 , H01L29/417 , H01L29/66 , H01L29/49 , G02F1/1368
CPC分类号： H01L27/1244 , G02F1/1368 , H01L29/41733 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： A drain electrode (17) includes (i) a lower drain electrode (17a) stacked on a semiconductor layer (14) so as to partially cover an upper surface of the semiconductor layer (14) and (ii) an upper drain electrode (17b). The semiconductor layer (14), the lower drain electrode (17a), and the upper drain electrode (17b) form steps. In a step part where the steps are formed, a distance between a periphery of the lower drain electrode (17a) and a periphery of the upper drain electrode (17b) is more than 0.4 μm but less than 1.5 μm.
摘要翻译：漏电极（17）包括：（i）层叠在半导体层（14）上的下漏电极（17a），以部分地覆盖半导体层（14）的上表面，以及（ii）上漏电极（17b））。半导体层（14），下漏电极（17a）和上漏电极（17b）形成台阶。在形成台阶的台阶部分中，下漏电极（17a）的周边与上漏电极（17b）的周边之间的距离大于0.4μm但小于1.5μm。

3. 发明授权

US08779296B2 Wiring board, method for manufacturing same, display panel, and display device 有权
标题翻译：接线板，制造方法，显示面板和显示装置
公开(公告)号：US08779296B2
公开(公告)日：2014-07-15
申请号：US13386685
申请日：2010-05-18
申请人： Hiromitsu Katsui , Kenichi Kitoh , Wataru Nakamura
发明人： Hiromitsu Katsui , Kenichi Kitoh , Wataru Nakamura
IPC分类号： H05K1/09 , G02F1/1362 , H05K1/00 , H05K1/03 , H05K1/11 , H05K1/18 , H05K1/16 , G02F1/1333 , G02F1/1343 , H01L27/32 , G02F1/1345
CPC分类号： H01L27/3276 , G02F1/1345 , G02F1/136286 , H01L27/3258
摘要： A wiring board is provided which can prevent a metal electrode from corroding due to a defect in a transparent conductive electrode covering an end face of an organic insulating film. An active-matrix substrate includes: a glass substrate; a metal wire provided on the glass substrate; a gate insulating film covering the metal wire; an interlayer insulating film covering the gate insulating film; and a transparent electrode formed on the interlayer insulating film. The scanning wire provided with a terminal area where the transparent electrode is laminated directly on the scanning wire. The transparent electrode extends over the terminal area in such a way as to cover an end face of the interlayer insulating film that faces the terminal area and an end face of the gate insulating film that faces the terminal area.
摘要翻译：提供一种布线板，其能够防止金属电极由于覆盖有机绝缘膜的端面的透明导电电极的缺陷而腐蚀。有源矩阵基板包括：玻璃基板; 设置在玻璃基板上的金属线; 覆盖金属线的栅极绝缘膜; 覆盖所述栅极绝缘膜的层间绝缘膜; 以及形成在层间绝缘膜上的透明电极。扫描线设置有透明电极直接层叠在扫描线上的端子区域。透明电极以覆盖面向端子区域的端子区域和栅极绝缘膜的端面的层间绝缘膜的端面的方式延伸在端子区域上。

4. 发明申请

US20130009160A1 ACTIVE MATRIX SUBSTRATE 审中-公开
标题翻译：主动矩阵基板
公开(公告)号：US20130009160A1
公开(公告)日：2013-01-10
申请号：US13635200
申请日：2010-12-07
申请人： Hiromitsu Katsui , Wataru Nakamura , Kenichi Kitoh
发明人： Hiromitsu Katsui , Wataru Nakamura , Kenichi Kitoh
IPC分类号： H01L27/15
CPC分类号： H01L27/1248 , G02F1/136227 , G02F1/136286 , H01L27/1244
摘要： Disposed on an insulating substrate (10a) are a plurality of TFTs arranged in a matrix, each including a drain electrode (18b) in which a first conductive layer (16b) and a second conductive layer (17bb) are laminated in this order; an interlayer insulating film (21) deposited on each of the TFTs, in which a plurality of contact holes (21a) reaching to the respective drain electrodes (18b) are formed; and a plurality of pixel electrodes (22a) disposed on the interlayer insulating film (21) in a matrix, each connected to a corresponding drain electrode (18b) via a corresponding contact hole (21a), being susceptible to an electric corrosion reaction with the second conductive layer (17bb). At a side of the drain electrode, which is connected to the pixel electrode (22a), a top surface of the first conductive layer (16b) is exposed from the second conductive layer (17bb). The interlayer insulating film (21) is disposed to cover the second conductive layer (17bb).
摘要翻译：设置在绝缘基板（10a）上的是排列成矩阵状的多个TFT，每个TFT依次层叠有第一导电层（16b）和第二导电层（17bb），漏电极（18b）沉积在每个TFT上的层间绝缘膜（21），其中形成到达各个漏电极（18b）的多个接触孔（21a）; 以及以矩阵形式设置在所述层间绝缘膜（21）上的多个像素电极（22a），每个像素电极通过相应的接触孔（21a）连接到相应的漏极电极（18b），所述接触孔易受到与第二导电层（17bb）。在与像素电极（22a）连接的漏电极的一侧，第一导电层（16b）的顶表面从第二导电层（17bb）露出。层间绝缘膜（21）设置成覆盖第二导电层（17bb）。

5. 发明申请

US20120120616A1 WIRING BOARD, METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY DEVICE 有权
标题翻译：接线板，制造方法，显示面板和显示装置
公开(公告)号：US20120120616A1
公开(公告)日：2012-05-17
申请号：US13386685
申请日：2010-05-18
申请人： Hiromitsu Katsui , Kenichi Kitoh , Wataru Nakamura
发明人： Hiromitsu Katsui , Kenichi Kitoh , Wataru Nakamura
IPC分类号： H05K7/00 , H05K1/09 , H05K3/46 , H05K1/02
CPC分类号： H01L27/3276 , G02F1/1345 , G02F1/136286 , H01L27/3258
摘要： A wiring board is provided which can prevent a metal electrode from corroding due to a defect in a transparent conductive electrode covering an end face of an organic insulating film. An active-matrix substrate includes: a glass substrate; a metal wire provided on the glass substrate; a gate insulating film covering the metal wire; an interlayer insulating film covering the gate insulating film; and a transparent electrode formed on the interlayer insulating film. The scanning wire provided with a terminal area where the transparent electrode is laminated directly on the scanning wire. The transparent electrode extends over the terminal area in such a way as to cover an end face of the interlayer insulating film that faces the terminal area and an end face of the gate insulating film that faces the terminal area.
摘要翻译：提供一种布线板，其能够防止金属电极由于覆盖有机绝缘膜的端面的透明导电电极的缺陷而腐蚀。有源矩阵基板包括：玻璃基板; 设置在玻璃基板上的金属线; 覆盖金属线的栅极绝缘膜; 覆盖所述栅极绝缘膜的层间绝缘膜; 以及形成在层间绝缘膜上的透明电极。扫描线设置有透明电极直接层叠在扫描线上的端子区域。透明电极以覆盖面向端子区域的端子区域和栅极绝缘膜的端面的层间绝缘膜的端面的方式延伸在端子区域上。

6. 发明申请

US20140147966A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件，显示器件及半导体器件和显示器件的制造方法
公开(公告)号：US20140147966A1
公开(公告)日：2014-05-29
申请号：US13883014
申请日：2011-11-01
申请人： Okifumi Nakagawa , Yoshimasa Chikama , Takeshi Hara , Hiromitsu Katsui
发明人： Okifumi Nakagawa , Yoshimasa Chikama , Takeshi Hara , Hiromitsu Katsui
IPC分类号： H01L29/66
CPC分类号： H01L29/66969 , G02F1/136227 , G02F2001/136231 , H01L27/1225 , H01L29/41733 , H01L29/66742 , H01L29/78606 , H01L29/7869
摘要： The semiconductor device (100) according to the present invention includes a gate electrode (102) of a TFT, a gate insulating layer (103) formed on the gate electrode (102), an oxide semiconductor layer (107) disposed on the gate insulating layer (103), a protecting layer (108) formed on the oxide semiconductor layer (107) by a spin-on-glass technique, and a source electrode (105) and a drain electrode (106) disposed on the protecting layer (108). Via a first contact hole (131) formed in the protecting layer (108), the source electrode (105) is electrically connected to the oxide semiconductor layer (104), and via a second contact hole (132), the drain electrode (106) is electrically connected to the oxide semiconductor layer (104).
摘要翻译：根据本发明的半导体器件（100）包括TFT的栅极（102），形成在栅电极（102）上的栅极绝缘层（103），设置在栅绝缘层上的氧化物半导体层（107）层（103），通过旋涂玻璃技术形成在氧化物半导体层（107）上的保护层（108）以及设置在保护层（108）上的源电极（105）和漏电极（106））。通过形成在保护层（108）中的第一接触孔（131），源电极（105）与氧化物半导体层（104）电连接，经由第二接触孔（132），漏电极）与氧化物半导体层（104）电连接。

7. 发明申请

US20130023086A1 ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE 审中-公开
标题翻译：有源矩阵基板，与其相同的显示面板以及制造有源矩阵基板的方法
公开(公告)号：US20130023086A1
公开(公告)日：2013-01-24
申请号：US13517079
申请日：2010-08-23
申请人： Yoshimasa Chikama , Hiromitsu Katsui , Hirohiko Nishiki , Yoshifumi Ohta , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto , Hinae Mizuno
发明人： Yoshimasa Chikama , Hiromitsu Katsui , Hirohiko Nishiki , Yoshifumi Ohta , Yuuji Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
IPC分类号： H01L21/336
CPC分类号： H01L27/1225 , G02F1/136213 , G02F1/1368 , G02F2001/13606 , G02F2001/136231 , G02F2001/136236 , G02F2201/501 , H01L27/1248 , H01L27/1288
摘要： An active matrix substrate includes a plurality of pixel electrodes (P) provided in a matrix, and a plurality of TFTs (5) connected to the pixel electrodes (P). Each of the TFTs (5) includes a gate electrode (11a) provided on an insulating substrate, a gate insulating film (12a) provided to cover the gate electrode (11a), an oxide semiconductor layer (13a) provided on the gate insulating film (12a) to overlap the gate electrode (11a), and a source electrode (17a) and a drain electrode (17b) facing each other and being connected to the oxide semiconductor layer (13a). A protective insulating film (14a) is provided between the oxide semiconductor layer (13a) and the source and drain electrodes (17a) and (17b) to cover the oxide semiconductor layer (13a).
摘要翻译：有源矩阵基板包括设置在矩阵中的多个像素电极（P）和连接到像素电极（P）的多个TFT（5）。每个TFT（5）包括设置在绝缘基板上的栅极电极（11a），设置成覆盖栅极电极（11a）的栅极绝缘膜（12a），设置在栅极绝缘膜上的氧化物半导体层（12a）与栅极电极（11a）重叠，并且与氧化物半导体层（13a）连接的源电极（17a）和漏电极（17b）彼此相对。在氧化物半导体层（13a）和源极和漏极（17a）和（17b）之间设置保护绝缘膜（14a）以覆盖氧化物半导体层（13a）。

8. 发明授权

US08940566B2 Semiconductor device, display device, and production method for semiconductor device and display device 有权
标题翻译：半导体装置，显示装置以及半导体装置及显示装置的制造方法
公开(公告)号：US08940566B2
公开(公告)日：2015-01-27
申请号：US13883014
申请日：2011-11-01
申请人： Okifumi Nakagawa , Yoshimasa Chikama , Takeshi Hara , Hiromitsu Katsui
发明人： Okifumi Nakagawa , Yoshimasa Chikama , Takeshi Hara , Hiromitsu Katsui
IPC分类号： H01L21/00 , H01L29/66 , G02F1/1362 , H01L27/12 , H01L29/786 , H01L29/417
CPC分类号： H01L29/66969 , G02F1/136227 , G02F2001/136231 , H01L27/1225 , H01L29/41733 , H01L29/66742 , H01L29/78606 , H01L29/7869
摘要： The semiconductor device (100) according to the present invention includes a gate electrode (102) of a TFT, a gate insulating layer (103) formed on the gate electrode (102), an oxide semiconductor layer (107) disposed on the gate insulating layer (103), a protecting layer (108) formed on the oxide semiconductor layer (107) by a spin-on-glass technique, and a source electrode (105) and a drain electrode (106) disposed on the protecting layer (108). Via a first contact hole (131) formed in the protecting layer (108), the source electrode (105) is electrically connected to the oxide semiconductor layer (104), and via a second contact hole (132), the drain electrode (106) is electrically connected to the oxide semiconductor layer (104).
摘要翻译：根据本发明的半导体器件（100）包括TFT的栅极（102），形成在栅电极（102）上的栅极绝缘层（103），设置在栅绝缘层上的氧化物半导体层（107）层（103），通过旋涂玻璃技术形成在氧化物半导体层（107）上的保护层（108）以及设置在保护层（108）上的源电极（105）和漏电极（106））。通过形成在保护层（108）中的第一接触孔（131），源电极（105）与氧化物半导体层（104）电连接，经由第二接触孔（132），漏电极）与氧化物半导体层（104）电连接。

9. 发明授权

US08779430B2 Semiconductor device, active matrix substrate, and display device 有权
标题翻译：半导体器件，有源矩阵基板和显示器件
公开(公告)号：US08779430B2
公开(公告)日：2014-07-15
申请号：US13696623
申请日：2011-04-27
申请人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
发明人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
IPC分类号： H01L29/04 , H01L29/10 , H01L29/15 , H01L31/00 , H01L31/036 , H01L29/786 , G02F1/1368 , H01L29/423 , H01L29/417 , G02F1/1362
CPC分类号： H01L29/78696 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L29/41733 , H01L29/42384
摘要： A semiconductor device (18) includes: a gate electrode (102) formed on a substrate (101); a semiconductor layer (104) formed above the gate electrode (102) and including a source region, a drain region, and a channel region; a source electrode (106) connected to the source region above the semiconductor layer (104); and a drain electrode (107) connected to the drain region above the semiconductor layer (104). The semiconductor layer (104) has, at a portion overlapping the drain electrode (107), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (107). At an outside of the channel region sandwiched between the drain electrode (107) and the source electrode (106), the semiconductor layer (104) has an adjustment portion where an outer boundary of the semiconductor layer (104) is positioned more inward than an outer boundary of the gate electrode (102).
摘要翻译：半导体器件（18）包括：形成在衬底（101）上的栅极（102）; 形成在栅电极（102）上方并包括源极区，漏极区和沟道区的半导体层（104）与所述半导体层（104）上方的源极区域连接的源电极（106）。以及连接到半导体层（104）上方的漏极区的漏电极（107）。半导体层（104）在与漏电极（107）重叠的部分处具有沿着从漏电极（107）引出的漏极线的延伸方向向外突出的突起。在夹在漏电极（107）和源电极（106）之间的沟道区域的外部，半导体层（104）具有调整部分，其中半导体层（104）的外边界位于栅电极（102）的外边界。

10. 发明申请

US20130102115A1 METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE 审中-公开
标题翻译：制造有源矩阵衬底的方法
公开(公告)号：US20130102115A1
公开(公告)日：2013-04-25
申请号：US13806964
申请日：2011-07-01
申请人： Takeshi Yaneda , Hiromitsu Katsui , Wataru Nakamura
发明人： Takeshi Yaneda , Hiromitsu Katsui , Wataru Nakamura
IPC分类号： H01L29/66
CPC分类号： H01L29/66742 , H01L27/124 , H01L27/1288
摘要： The disclosed method for manufacturing an active matrix substrate includes a step in which a first mask is used to pattern a first conductive layer G, CS, and S, a step in which a second mask is used to pattern a first insulating layer, a step in which a third mask is used to pattern a semiconductor layer, a step in which a fourth mask is used to pattern a second conductive later, a step in which a fifth mask is used to pattern a second insulating layer, and a step in which a sixth mask is used to pattern a third conductive layer.
摘要翻译：所公开的制造有源矩阵基板的方法包括以下步骤：第一掩模用于对第一导电层G，CS和S进行图案化，其中使用第二掩模来对第一绝缘层进行图案化的步骤，步骤其中使用第三掩模来对半导体层进行图案化，其中第四掩模用于稍后对第二导电图案化的步骤，使用第五掩模来对第二绝缘层进行图案化的步骤，以及其中使用第六掩模来图案化第三导电层。

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