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1. 发明申请

US20100191949A1 INFORMATION PROCESSING TERMINAL AND FALSIFICATION VERIFICATION METHOD 审中-公开
标题翻译：信息处理终端和伪造验证方法
公开(公告)号：US20100191949A1
公开(公告)日：2010-07-29
申请号：US12666615
申请日：2007-07-26
申请人： Takeshi Shishido , Jun Anzai
发明人： Takeshi Shishido , Jun Anzai
IPC分类号： G06F9/24
CPC分类号： G06F21/575
摘要： An information processing terminal that performs falsification verification at the time of bootstrapping thereof includes: a state sensor that senses a connection of an external connector or a data reception via the external connector, to judge whether or not a program stored in the information processing terminal is in a rewritable state; a flag storage that stores a flag referred to at the time of bootstrapping of the information processing terminal therein; a flag controller that turns on the flag according to a judged result that the program is in the rewritable state by the state sensor to record the turn-on flag in the flag storage; and a falsification verifier that judges whether or not it is necessary to carry out falsification verification according to a status of the flag, and performs falsification verification of the program only in the case in which the flag in the flag storage is turned on, at the time of bootstrapping of the information processing terminal.
摘要翻译：一种信号处理终端，在进行伪造时进行伪造验证，包括：状态传感器，其通过外部连接器感测外部连接器或数据接收的连接，判断存储在信息处理终端中的程序是否为在可重写的状态; 标志存储器，其存储在其中信息处理终端自举时引用的标志; 标志控制器，其根据由所述状态传感器执行程序处于所述可重写状态的判断结果来接通所述标志，以将所述开启标志记录在所述标志存储器中; 以及伪造验证器，其判断是否需要根据标志的状态进行伪造验证，并且仅在标志存储器中的标志被打开的情况下执行程序的伪造验证，在信息处理终端自举的时间。

2. 发明授权

US06846521B2 Apparatus and method for forming deposited film 失效
标题翻译：用于形成沉积膜的装置和方法
公开(公告)号：US06846521B2
公开(公告)日：2005-01-25
申请号：US10650763
申请日：2003-08-29
申请人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
发明人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
IPC分类号： C23C16/503 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： H01J37/32009 , C23C16/5096 , C23C16/545 , H01J37/32532
摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.
摘要翻译：包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。分离电极面对带状基板的表面的总面积与其上安装有分离电极的非分割电极的面积相同。这提高了用于形成沉积膜的装置中产生的等离子体的均匀性，并且能够降低形成沉积膜所需的成本。

3. 发明授权

US07064101B2 Stable astaxanthin-containing powdery compositions and process for producing the same 有权
标题翻译：稳定的含虾青素的粉状组合物及其制造方法
公开(公告)号：US07064101B2
公开(公告)日：2006-06-20
申请号：US10472679
申请日：2002-03-22
申请人： Nobukazu Tanaka , Tadashi Fukami , Terumasa Hosokawa , Takeshi Shishido
发明人： Nobukazu Tanaka , Tadashi Fukami , Terumasa Hosokawa , Takeshi Shishido
IPC分类号： C11D1/66 , C11D11/02 , C11D17/06 , C09K15/06 , C09K15/34
CPC分类号： C07C403/24 , A23K20/179 , A23K40/10 , A23K50/10 , A23K50/80 , A23L5/44 , A23L7/161 , C09B61/00
摘要： The present invention relates to a stable astaxanthin-containing powdery composition which is obtained by drying a suspension containing a ground Haematococcus alga containing astaxanthin, a surfactant, an antioxidant, an excipient and water and to a process for preparing the same.According to the present invention, there can be provided an astaxanthin-containing powdery composition wherein astaxanthin present in Haematococcus alga has been efficiently stabilized to improve its storage stability for a long term and which is excellent in flowability as a powder, easy to handle and can be easily subjected to solvent extraction without degrading the astaxanthin.
摘要翻译：本发明涉及一种稳定的含虾青素粉末组合物，其通过干燥含有含有虾青素的地球红藻藻，表面活性剂，抗氧化剂，赋形剂和水的悬浮液及其制备方法而获得。根据本发明，可以提供含有虾青素的粉末状组合物，其中存在于海藻属藻中的虾青素已被有效地稳定以提高其长期的储存稳定性，并且作为粉末的流动性优异，易于处理并且可以容易进行溶剂萃取而不降解虾青素。

4. 发明申请

US20060127758A1 Negative electrode can, alkaline cell and production method for same 审中-公开
标题翻译：负电极罐，碱性电池及其制作方法相同
公开(公告)号：US20060127758A1
公开(公告)日：2006-06-15
申请号：US11288740
申请日：2005-11-29
申请人： Takeshi Shishido , Iwazou Takahashi , Shunji Watanabe , Tsugio Sakai
发明人： Takeshi Shishido , Iwazou Takahashi , Shunji Watanabe , Tsugio Sakai
IPC分类号： H01M2/02 , H01M4/42 , H01M4/54 , H01M4/50 , H01M2/08 , H01M10/04 , H01M4/66
CPC分类号： H01M2/0272 , H01M2/0222 , H01M2/0275 , H01M2/0287 , H01M2/0292 , H01M6/08 , H01M6/12 , Y10T29/49115
摘要： The invention provides a mercury-free alkaline cell which does not generate a hydrogen gas. The alkaline cell according to the invention contains a positive electrode, a negative electrode comprising zinc alloy powder, a separator which separates the positive electrode from the negative electrode, an alkaline electrolyte, a positive electrode can imparted with the positive electrode, a negative electrode can imparted with the negative electrode which has a tin-coated layer formed after subjected to a surface treatment with an electrically conductive polymer and comes in contact with the negative electrode via the tin-coated layer and a gasket interposed between the positive electrode can and the negative electrode can.
摘要翻译：本发明提供一种不产生氢气的无汞碱性电池。本发明的碱性电池含有正极，含有锌合金粉末的负极，将正极与负极分离的隔板，碱性电解质，能够赋予正极的正极，负极罐赋予负极，其具有在用导电聚合物进行表面处理之后形成的锡涂层，并且经由锡涂层与负极接触，并且插入在正极罐和负极之间的垫圈电极罐。

5. 发明授权

US06470823B2 Apparatus and method for forming a deposited film by a means of plasma CVD 失效
标题翻译：通过等离子体CVD形成沉积膜的装置和方法
公开(公告)号：US06470823B2
公开(公告)日：2002-10-29
申请号：US09771650
申请日：2001-01-30
申请人： Takahiro Yajima , Masahiro Kanai , Yuzo Koda , Takeshi Shishido
发明人： Takahiro Yajima , Masahiro Kanai , Yuzo Koda , Takeshi Shishido
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , C23C16/4401 , C23C16/4412 , C23C16/455 , C23C16/509 , H01J37/32532
摘要： A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into the vacuum chamber, and an exhaustion portion through which the vacuum chamber is exhausted, the power application electrode being arranged so as to oppose a substrate for film formation positioned in the vacuum chamber, characterized in that at least said raw material gas introduction portion or the exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting the plasma, and the power application electrode and the opening adjusting member are arranged to satisfy an equation a or c≧b, with a being a shortest distance between the power application electrode and the opening adjusting member provided at the raw material gas introduction portion, c being a shortest distance between the power application electrode and the opening adjusting member provided at the exhaustion portion, and b being an average distance between the substrate and a horizontal plane face of the power application electrode which is opposed to a face of the substrate.
摘要翻译：一种成膜设备，包括真空室，电力施加电极，原料气体引入到真空室中的原料气体引入部分和真空室排出的排气部分，电力施加电极被布置成与位于真空室中的成膜用基板相对，其特征在于，至少所述原料气体导入部或者所述排气部设置有用于截取等离子体的期望厚度的开口调节部件，电力施加电极和开口调整构件被布置成满足等式a或c> = b，其中电源施加电极和设置在原料气体导入部分的开口调节构件之间的距离最短，c是最短的电力施加电极和设置在排气口处的开口调节构件之间的距离离子部分，b是与基板的表面相对的电力施加电极的基板与水平面面之间的平均距离。

6. 发明授权

US07074641B2 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element 失效
标题翻译：形成硅基薄膜，硅基薄膜和光电元件的方法
公开(公告)号：US07074641B2
公开(公告)日：2006-07-11
申请号：US10101859
申请日：2002-03-21
申请人： Takaharu Kondo , Shotaro Okabe , Koichiro Moriyama , Takahiro Yajima , Takeshi Shishido
发明人： Takaharu Kondo , Shotaro Okabe , Koichiro Moriyama , Takahiro Yajima , Takeshi Shishido
IPC分类号： H01L21/20
CPC分类号： H01L31/202 , C30B25/105 , C30B29/06 , H01L21/02422 , H01L21/02425 , H01L21/02491 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/076 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.
摘要翻译：根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件，在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件具有优异的特性，附着力和耐环境性。

7. 发明申请

US20060127757A1 Alkaline cell and production method for same 审中-公开
标题翻译：碱性电池及其制作方法相同
公开(公告)号：US20060127757A1
公开(公告)日：2006-06-15
申请号：US11288735
申请日：2005-11-29
申请人： Takeshi Shishido , Iwazou Takahashi , Shunji Watanabe , Tsugio Sakai
发明人： Takeshi Shishido , Iwazou Takahashi , Shunji Watanabe , Tsugio Sakai
IPC分类号： H01M2/02 , H01M4/42 , H01M2/08 , H01M4/50 , H01M4/54 , H01M10/26
CPC分类号： H01M6/08 , H01M2/0222 , H01M2/0272 , H01M2/0275 , H01M2/0287 , H01M6/12 , Y10T29/49115
摘要： The invention provides a mercury-free alkaline cell which does not generate a hydrogen gas. The alkaline cell according to the invention is composed of: a positive electrode; a negative electrode containing zinc alloy powder; a separator which separates the positive electrode from the negative electrode; an alkaline electrolyte; a positive electrode can imparted with the positive electrode, a negative electrode can imparted with the negative electrode, the negative electrode can having a tin-coated layer subjected to a thermal treatment at a melting point (232° C.) of tin or higher and coming in contact with the negative electrode via the tin-coated layer; and a gasket interposed between the positive electrode can and the negative electrode can.
摘要翻译：本发明提供一种不产生氢气的无汞碱性电池。本发明的碱性电池由正电极构成，含锌合金粉末的负极; 将正极与负极分离的隔板; 碱性电解液可以赋予正极，负极可以赋予负极，负极可以具有在锡或更高的熔点（232℃）进行热处理的锡涂层，通过锡涂层与负极接触; 以及夹在正极罐和负极罐之间的衬垫。

8. 发明申请

US20050227457A1 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element 失效
标题翻译：形成硅基薄膜，硅基薄膜和光电元件的方法
公开(公告)号：US20050227457A1
公开(公告)日：2005-10-13
申请号：US10101859
申请日：2002-03-21
申请人： Takaharu Kondo , Shotaro Okabe , Koichiro Moriyama , Takahiro Yajima , Takeshi Shishido
发明人： Takaharu Kondo , Shotaro Okabe , Koichiro Moriyama , Takahiro Yajima , Takeshi Shishido
IPC分类号： H01L31/04 , C30B1/00 , C30B25/10 , C30B29/06 , H01L21/20 , H01L21/205 , H01L21/36 , H01L31/075 , H01L31/20
CPC分类号： H01L31/202 , C30B25/105 , C30B29/06 , H01L21/02422 , H01L21/02425 , H01L21/02491 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/076 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.
摘要翻译：根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件，在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件具有优异的特性，附着力和耐环境性。

9. 发明申请

US20090314310A1 DEPOSIT REMOVAL METHOD 审中-公开
标题翻译：沉积物去除方法
公开(公告)号：US20090314310A1
公开(公告)日：2009-12-24
申请号：US12486687
申请日：2009-06-17
申请人： Takeshi Shishido
发明人： Takeshi Shishido
IPC分类号： C25F5/00
CPC分类号： C23C16/4405
摘要： A deposit removal method including a first process of stripping at least part of a deposit that has deposited on inner walls of a reaction chamber and/or a surface of components located inside the reaction chamber where a deposited film is formed from the inner walls of the reaction chamber and/or the surface of components located inside the reaction chamber; and a second process of physically removing the stripped deposit.
摘要翻译：一种沉积物去除方法，包括：剥离沉积在反应室的内壁上的沉积物的至少一部分和/或位于反应室内的部件的表面的第一工艺，其中沉积膜由反应室的内壁形成反应室和/或位于反应室内的组分的表面; 以及物理去除剥离的沉积物的第二过程。

10. 发明授权

US06638359B2 Deposited film forming apparatus and deposited film forming method 失效
标题翻译：沉积成膜装置和沉积膜形成方法
公开(公告)号：US06638359B2
公开(公告)日：2003-10-28
申请号：US09772988
申请日：2001-01-31
申请人： Takahiro Yajima , Masahiro Kanai , Takeshi Shishido
发明人： Takahiro Yajima , Masahiro Kanai , Takeshi Shishido
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , C23C16/5096 , C23C16/545 , C23C18/14 , H01L31/1804 , H05K3/02 , H05K3/105 , Y02E10/547 , Y02P70/521
摘要： A deposited film forming apparatus has a vacuum chamber containing a power applying electrode spaced above a grounded flat plate base member. The power applying electrode is fixed to the base member with a plurality of electrically insulating fastening members, at positions effective to suppress deformation of the power applying electrode, wherein an electrically insulating spacer is placed between the power supplying electrode and the base member to electrically insulate said power applying electrode from the base member.
摘要翻译：沉积膜形成装置具有真空室，该真空室包含在接地平板基体上方间隔开的功率施加电极。功率施加电极在有效抑制功率施加电极的变形的位置处用多个电绝缘的紧固构件固定到基底构件，其中电绝缘间隔物放置在供电电极和基底构件之间以电绝缘所述功率施加电极从所述基底构件。

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