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1. 发明授权

US08702150B2 Tonneau cover apparatus 有权
标题翻译： Tonneau盖装置
公开(公告)号：US08702150B2
公开(公告)日：2014-04-22
申请号：US13350955
申请日：2012-01-16
申请人： Kazunori Saito , Takahiro Yajima
发明人： Kazunori Saito , Takahiro Yajima
IPC分类号： B60P7/02
CPC分类号： B60R5/047
摘要： There is provided a tonneau cover apparatus including: a winding shaft that winds up a tonneau cover; an elongated shaped case that accommodates the winding shaft; support members provided at one end portion and another end portion of the case, and supporting the winding shaft; a retention member provided at the one end portion and/or the other end portion of the case and including an outer wall portion that covers the support member; and blocking portions provided at the support member and the retention member at the at least one end portion, the blocking portions being disposed at the inner side relative to the outer wall portion, and blocking movement of the retention member outward in the axial direction of the winding shaft from the engaging position by abutting against one another at the engaging position.
摘要翻译：提供了一种吨位覆盖装置，其包括：缠绕一吨吨盖的卷绕轴; 容纳卷绕轴的细长形状的壳体; 支撑构件设置在壳体的一个端部和另一个端部处，并且支撑卷绕轴; 保持构件，设置在所述壳体的一个端部和/或另一个端部，并且包括覆盖所述支撑构件的外壁部; 以及在所述至少一个端部处设置在所述支撑构件和所述保持构件处的阻挡部分，所述阻挡部分相对于所述外壁部分设置在所述内侧，并且所述保持构件在所述保持构件的轴向方向上向外阻挡通过在接合位置处彼此抵靠而从接合位置卷绕轴。

2. 发明授权

US06855377B2 Deposited film forming apparatus and deposited film forming method 失效
标题翻译：沉积成膜装置和沉积膜形成方法
公开(公告)号：US06855377B2
公开(公告)日：2005-02-15
申请号：US10656131
申请日：2003-09-08
申请人： Takahiro Yajima , Masahiro Kanai , Takeshi Shishido
发明人： Takahiro Yajima , Masahiro Kanai , Takeshi Shishido
IPC分类号： H05H1/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L31/04 , H01L31/18 , H05H1/02 , C23C16/00 , H05H1/00
CPC分类号： C23C16/5096 , C23C16/545 , H01J37/32009 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A deposited film forming apparatus has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member.
摘要翻译：沉积膜形成装置具有设置在真空室中接地的平板型基体上方的功率施加电极和用于向施加电力供电的电源，沉积膜形成装置被构造成提供电力从电源到施加电极，以在电力施加电极和与真空室中的功率施加电极相对配置的基板之间的放电空间中产生等离子体，并且用作与电力成对的电极从而分解引入到真空室中的源气体，以在基板上形成沉积膜，其中功率施加电极固定到基底构件上，其中施加电力的电极与基体隔离。

3. 发明授权

US06530341B1 Deposition apparatus for manufacturing thin film 有权
标题翻译：用于制造薄膜的沉积装置
公开(公告)号：US06530341B1
公开(公告)日：2003-03-11
申请号：US09257027
申请日：1999-02-25
申请人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H01J37/3277 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment. Accordingly, since the structural relaxation of film is promoted even at relatively high deposition rates, a microcrystal semiconductor film can be formed at the relatively high deposition rates with good efficiency, with high uniformity, and with good reproducibility.
摘要翻译：本发明的沉积装置被布置成使得设置在辉光放电空间中的与放电接触的空间中的射频施加电极的表面积大于接地电极整体的表面积（阳极电极），其在放电空间中包括带状构件。该结构可以将设置在辉光放电空间中的阴极的电位（自偏压）自动保持在相对于包括结果，将带正电荷的离子的照射方向施加到带状构件上的沉积膜上，使得存在于等离子体放电中的离子更有效地朝向带状构件加速，从而有效地通过离子轰击给沉积膜表面赋予能量。因此，即使在相对高的沉积速率下也能促进膜的结构弛豫，可以以较高的沉积速率以高的均匀性和高的再现性形成微晶半导体膜。

4. 发明授权

US06399411B1 Method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device 有权
标题翻译：用于形成非单晶半导体薄膜的方法及其制造方法
公开(公告)号：US06399411B1
公开(公告)日：2002-06-04
申请号：US09594563
申请日：2000-06-15
申请人： Tadashi Hori , Shotaro Okabe , Akira Sakai , Yuzo Kohda , Takahiro Yajima
发明人： Tadashi Hori , Shotaro Okabe , Akira Sakai , Yuzo Kohda , Takahiro Yajima
IPC分类号： H01L2100
CPC分类号： C23C16/545 , C23C14/562 , H01L21/0237 , H01L21/0243 , H01L21/02447 , H01L21/0245 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S438/907
摘要： A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An external chamber surrounding the deposition chamber wall is provided in the apparatus. While the belt-like substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the belt-like substrate. A cooling mechanism and a temperature-increasing mechanism covering a part of an outside surface of the deposition chamber wall provide temperature control.
摘要翻译：一种用于形成非单晶半导体薄膜的方法和使用具有由成膜室壁和带状衬底围成的成膜空间的成膜室的装置的光电器件。在该装置中设置有围绕沉积室壁的外部室。当带状基板沿纵向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以引起微波等离子体，从而在带状基板的表面上形成非单晶半导体薄膜。覆盖沉积室壁的外表面的一部分的冷却机构和升温机构提供温度控制。

5. 发明授权

US06162988A Photovoltaic element 失效
标题翻译：光伏元件
公开(公告)号：US06162988A
公开(公告)日：2000-12-19
申请号：US923259
申请日：1997-09-04
申请人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： G03G5/08 , C23C16/50 , C23C16/511 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20 , H01L31/00
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.
摘要翻译：本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法以及用于连续批量生产该装置的装置。

6. 发明授权

US5769963A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5769963A
公开(公告)日：1998-06-23
申请号：US697783
申请日：1996-08-30
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/0352
CPC分类号： H01L31/076 , H01L31/03682 , H01L31/075 , H01L31/206 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.
摘要翻译：一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸第一半导体层中的晶体在第一电极侧变化较小。这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。

7. 发明申请

US20120187714A1 COVER COUPLING STRUCTURE 有权
标题翻译：覆盖联轴器结构
公开(公告)号：US20120187714A1
公开(公告)日：2012-07-26
申请号：US13357006
申请日：2012-01-24
申请人： Kazunori Saito , Takahiro Yajima
发明人： Kazunori Saito , Takahiro Yajima
IPC分类号： B60P7/02
CPC分类号： B60R5/047
摘要： There is provided a cover coupling structure including: a coupling groove that is provided to an elongated shaped tonneau cover apparatus including a tonneau cover, the coupling groove including a coupling portion coupled to one end of a sheet-form cover, and an opening portion that is open to the outer peripheral side of the tonneau cover apparatus and is in communication with the coupling portion; an anchor portion provided to the one end of the cover and coupling the one end of the cover to the coupling portion by anchoring to the coupling portion; and a resiliently deformable portion that anchors the anchor portion to the coupling portion, and is set with an external profile dimension along a direction orthogonal to a first face of the cover that is larger than the height dimension of the opening portion when the resiliently deformable portion has been resiliently deformed.
摘要翻译：提供了一种盖结合结构，其包括：联接槽，其设置于包括吨位盖的细长形状的吨位覆盖装置，所述联接槽包括联接到片状盖的一端的联接部和开口部，并且与所述联轴器部分相连通; 锚固部分，其设置在所述盖的一端，并且通过锚固到所述联接部分将所述盖的一端连接到所述联接部; 以及可弹性变形部分，其将所述锚定部分锚固到所述联接部分，并且当所述可弹性变形部分被设置为具有与所述盖子的第一面垂直的方向的外部轮廓尺寸，所述外部轮廓尺寸大于所述开口部分的高度尺寸已经弹性变形。

8. 发明申请

US20120181813A1 TONNEAU COVER APPARATUS 有权
标题翻译： TONNEAU盖装置
公开(公告)号：US20120181813A1
公开(公告)日：2012-07-19
申请号：US13350955
申请日：2012-01-16
申请人： Kazunori Saito , Takahiro Yajima
发明人： Kazunori Saito , Takahiro Yajima
IPC分类号： B60P7/04
CPC分类号： B60R5/047
摘要： There is provided a tonneau cover apparatus including: a winding shaft that winds up a tonneau cover; an elongated shaped case that accommodates the winding shaft; support members provided at one end portion and another end portion of the case, and supporting the winding shaft; a retention member provided at the one end portion and/or the other end portion of the case and including an outer wall portion that covers the support member; and blocking portions provided at the support member and the retention member at the at least one end portion, the blocking portions being disposed at the inner side relative to the outer wall portion, and blocking movement of the retention member outward in the axial direction of the winding shaft from the engaging position by abutting against one another at the engaging position.
摘要翻译：提供了一种吨位覆盖装置，其包括：缠绕一吨吨盖的卷绕轴; 容纳卷绕轴的细长形状的壳体; 支撑构件设置在壳体的一个端部和另一个端部处，并且支撑卷绕轴; 保持构件，设置在所述壳体的一个端部和/或另一个端部，并且包括覆盖所述支撑构件的外壁部; 以及在所述至少一个端部处设置在所述支撑构件和所述保持构件处的阻挡部分，所述阻挡部分相对于所述外壁部分设置在所述内侧，并且所述保持构件在所述保持构件的轴向方向上向外阻挡通过在接合位置处彼此抵靠而从接合位置卷绕轴。

9. 发明授权

US06846521B2 Apparatus and method for forming deposited film 失效
标题翻译：用于形成沉积膜的装置和方法
公开(公告)号：US06846521B2
公开(公告)日：2005-01-25
申请号：US10650763
申请日：2003-08-29
申请人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
发明人： Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
IPC分类号： C23C16/503 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： H01J37/32009 , C23C16/5096 , C23C16/545 , H01J37/32532
摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.
摘要翻译：包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。分离电极面对带状基板的表面的总面积与其上安装有分离电极的非分割电极的面积相同。这提高了用于形成沉积膜的装置中产生的等离子体的均匀性，并且能够降低形成沉积膜所需的成本。

10. 发明授权

US06800539B2 Thin film formation method 有权
标题翻译：薄膜形成方法
公开(公告)号：US06800539B2
公开(公告)日：2004-10-05
申请号：US09900043
申请日：2001-07-09
申请人： Takahiro Yajima , Masahiro Kanai , Shuichiro Sugiyama
发明人： Takahiro Yajima , Masahiro Kanai , Shuichiro Sugiyama
IPC分类号： H01L2120
CPC分类号： C23C16/509 , C23C16/24 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation: 80M+200≦Pd≦160M+333, and an RF power is applied to generate a plasma and a non-monocrystal silicon thin film is formed on the substrate 201 in the discharge space. Thereby, there is provided a thin film formation method making it possible to form an amorphous silicon film in which both a uniform film forming rate of a film distribution facilitating an implementation of a large area and a high conversion efficiency can be obtained while achieving an increase in the film forming rate.
摘要翻译：在放电空间中，衬底201和阴极206彼此间隔d（cm）设置，含有一个或多个硅化合物和氢的气体被引入到放电空间中，并且成膜的产物Pd 压力P（Pa）和d，氢气流量M（SLM）设定为满足关系：80M + 200 <= Pd <= 160M + 333，并且施加RF功率以产生等离子体和在放电空间中的基板201上形成非单晶硅薄膜。因此，提供了一种薄膜形成方法，使得可以形成非晶硅膜，其中可以获得均匀的薄膜分布成膜速率，从而可以获得促进大面积实现和高转换效率，同时实现增加在成膜率上。

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