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    • 2. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US06281558B1
    • 2001-08-28
    • US09126279
    • 1998-07-30
    • Hirokazu SayamaMasao Nishida
    • Hirokazu SayamaMasao Nishida
    • H01L2976
    • H01L21/823456H01L21/823462
    • A high-voltage element (H)to which a high gate voltage is applied, and a low-voltage element (L) to which a low gate voltage is applied, are formed in a semiconductor substrate (1). Bird's beaks (8, 18) are formed in gate insulating films (7, 17) by thermal oxidation. Since a gate electrode (9) of the element (H) has a shorter gate length than a gate electrode (19) of the element (L), the ratio of the bird's beak in the gate insulating films (7, 17) is small in the element (L) and large in the element (H). Therefore, the element (H) has a high breakdown voltage and less aged deterioration, leading to long lifetime. The element (L) has a high current driving capability to produce high-speed operation. Thus, long lifetime, high operation speed and easy manufacturing steps are realized at the same time.
    • 在半导体衬底(1)中形成施加有高栅极电压的高电压元件(H)和施加低栅极电压的低电压元件(L)。 鸟喙(8,18)通过热氧化形成在栅极绝缘膜(7,17)中。 由于元件(H)的栅电极(9)具有比元件(L)的栅电极(19)更短的栅极长度,所以栅极绝缘膜(7,17)中的鸟喙的比例小 在元件(L)中,元件(H)大。 因此,元件(H)具有高的击穿电压和较少的老化劣化,导致寿命长。 元件(L)具有高电流驱动能力以产生高速操作。 因此,同时实现长寿命,高操作速度和容易的制造步骤。
    • 4. 发明授权
    • Aircraft control system
    • 飞机控制系统
    • US6085145A
    • 2000-07-04
    • US84900
    • 1998-05-28
    • Yasuhiro TakaMasao NishidaToshikazu NakajimaRyuji Otsuka
    • Yasuhiro TakaMasao NishidaToshikazu NakajimaRyuji Otsuka
    • G01S7/12G01S13/91G08G5/00
    • G08G5/0043
    • An aircraft control system which assist in determining aircraft arrival orders and intervals, reduces controller's workloads, and ensures safe aircraft flight operation are provided. An aircraft position display system provided as part of a terminal flight control apparatus for controlling the operation of an airport terminal with the use of radar and so forth employs a plurality of tags, each displaying on a first display screen a flight control instruction composed of heading data, altitude data, and speed data, a change arrangement for allowing a user to change the heading data, altitude data, and/or speed data of the tag independently according to the flight control instruction, a display arrangement for use in a flight control instruction input mode, an arrangement for blinking an entered flight control instruction until a pilot acknowledges the instruction, an arrangement for returning the mode to the original mode when the pilot acknowledges the instruction, and an arrangement for registering final approach FIX (F) data.
    • 有助于确定飞机到达订单和间隔的飞机控制系统,减少控制器的工作量,并确保安全的飞机飞行操作。 作为用于使用雷达等控制机场终端的操作的终端飞行控制装置的一部分提供的飞行器位置显示系统使用多个标签,每个标签在第一显示屏幕上显示由标题组成的飞行控制指令 数据,高度数据和速度数据,用于允许用户根据飞行控制指令独立地改变标签数据,高度数据和/或速度数据的改变布置,用于飞行控制的显示装置 指令输入模式,用于闪烁输入的飞行控制指令直到导频确认指令的布置,当导频确认指令时将模式返回到原始模式的布置,以及用于登记最终进场FIX(F)数据的布置。
    • 6. 发明授权
    • Distributed constant circuit
    • 分布式恒定电路
    • US6140892A
    • 2000-10-31
    • US145910
    • 1998-09-02
    • Hisanori UdaMasao Nishida
    • Hisanori UdaMasao Nishida
    • H01P1/00H01P1/20H01P5/02H03F3/60H01P1/203H01P5/00
    • H01P1/2007
    • In a distributed constant circuit, a first line is connected between a first node and a second node. The first node is grounded through a series connection between a first capacitor and a second line, and the second node is grounded through a series connection between a second capacitor and a third line. The parameters of the first, second and third lines and the first and second capacitors satisfy a predetermined relational expression such that characteristics equivalent to a .lambda./4 line are obtained with respect to the frequency of a fundamental wave, and the second and third lines and the first and second capacitors respectively resonate with respect to an arbitrary frequency.
    • 在分布式恒定电路中,第一线连接在第一节点和第二节点之间。 第一节点通过第一电容器和第二线路之间的串联连接而接地,并且第二节点通过第二电容器和第三线路之间的串联连接而接地。 第一,第二和第三线以及第一和第二电容器的参数满足预定的关系式,使得相对于基波的频率获得与λ/ 4线相当的特性,并且第二和第三线和 第一和第二电容器分别相对于任意频率谐振。
    • 9. 发明授权
    • High-breakdown voltage field-effect transistor
    • 高击穿电压场效应晶体管
    • US5324969A
    • 1994-06-28
    • US930189
    • 1992-08-12
    • Shigeyuki MuraiTakayoshi HigashinoMasao Nishida
    • Shigeyuki MuraiTakayoshi HigashinoMasao Nishida
    • H01L21/285H01L21/338H01L29/10H01L29/812H01L29/80H01L29/161H01L29/167
    • H01L29/66871H01L21/28587H01L29/1029H01L29/812
    • A field-effect transistor including a first channel layer, formed in contacting relationship with a gate electrode, and a second channel layer, formed on one side or both sides of the first channel layer in non-contacting relationship with the gate electrode, the carrier concentration in the second channel layer being higher than that in the first channel layer but lower than that in high-impurity concentration active layers forming drain and source regions. The field-effect transistor employs an offset gate configuration in which the gate electrode is formed in contacting relationship with the first channel layer at a position nearer to the high-impurity concentration active layer forming the source region than to the high-impurity concentration active layer forming the drain region. A dummy gate is formed and ion implantation is performed from two different angles using the dummy gate as a mask, thereby efficiently forming the source region, drain region, and second channel layer in a sequence of successive processing steps. By combining the suitably patterned first and second ion shielding layers, the gate to source electrode spacing and the gate to drain electrode spacing are controlled by the accuracy to which the second ion shielding layer can be formed.
    • 一种场效应晶体管,包括与栅电极形成为接触关系的第一沟道层和形成在与栅电极非接触关系的第一沟道层的一侧或两侧上的第二沟道层,载体 第二沟道层中的浓度高于第一沟道层中的浓度,但低于形成漏极和源极区的高杂质浓度有源层中的浓度。 场效应晶体管采用偏移栅极配置,其中栅极形成在与形成源极区更接近高杂质浓度有源层的位置处的第一沟道层的接触关系高于高杂质浓度有源层 形成漏区。 形成虚拟栅极,并使用伪栅极作为掩模从两个不同的角度进行离子注入,从而以连续的处理步骤的顺序有效地形成源极区域,漏极区域和第二沟道层。 通过组合适当图案化的第一离子屏蔽层和第二离子屏蔽层,通过可以形成第二离子屏蔽层的精度来控制栅极 - 源极电极间距和栅 - 漏电极间距。