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1. 发明授权

US06680541B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06680541B2
公开(公告)日：2004-01-20
申请号：US10050859
申请日：2002-01-18
申请人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
发明人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
IPC分类号： H01L23522
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
摘要翻译：至少含有硅原子，氧原子和碳原子的氧原子与硅原子的数量比为1.5以上，碳原子数与硅原子数之比为1〜2的金属间绝缘膜，具有膜厚收缩率在14％以下的氧化时，介电常数非常低，抗蚀剂蚀刻的选择性高，可以在半导体器件中不使用氧化硅保护膜的情况下使用。

2. 发明授权

US06358838B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06358838B2
公开(公告)日：2002-03-19
申请号：US09760777
申请日：2001-01-17
申请人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
发明人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
IPC分类号： H01L21311
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
摘要翻译：至少含有硅原子，氧原子和碳原子的氧原子与硅原子的数量比为1.5以上，碳原子数与硅原子数之比为1〜2的金属间绝缘膜，具有膜厚收缩率在14％以下的氧化时，介电常数非常低，抗蚀剂蚀刻的选择性高，可以在半导体器件中不使用氧化硅保护膜的情况下使用。

3. 发明授权

US07947596B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07947596B2
公开(公告)日：2011-05-24
申请号：US11526754
申请日：2006-09-26
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/00
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）nSiH 4-n表示的烷氧基硅烷（n为整数）的气体混合物形成 1〜3的范围，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括具有高可靠性和较少布线延迟时间的铜布线的半导体器件。

4. 发明申请

US20070018330A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070018330A1
公开(公告)日：2007-01-25
申请号：US11526754
申请日：2006-09-26
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）表示的烷氧基硅烷的气体混合物形成（n为 1〜3的整数，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括高可靠性和较少布线延迟时间的铜布线的半导体器件。

5. 发明授权

US07122900B2 Semiconductor device and method manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07122900B2
公开(公告)日：2006-10-17
申请号：US10276776
申请日：2001-05-28
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/44
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）表示的烷氧基硅烷的气体混合物形成（n为 1〜3的整数，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括具有高可靠性和较少布线延迟时间的铜布线的半导体器件。

6. 发明授权

US07563716B2 Polishing method 有权
标题翻译：抛光方法
公开(公告)号：US07563716B2
公开(公告)日：2009-07-21
申请号：US11693383
申请日：2007-03-29
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： H01L21/302
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要翻译：抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

7. 发明申请

US20070167015A1 POLISHING METHOD 有权
标题翻译：抛光方法
公开(公告)号：US20070167015A1
公开(公告)日：2007-07-19
申请号：US11693383
申请日：2007-03-29
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： H01L21/302 , C03C15/00 , C23F1/00 , H01L21/461
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要翻译：抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

8. 发明申请

US20070029285A1 Polishing method 有权
公开(公告)号：US20070029285A1
公开(公告)日：2007-02-08
申请号：US11581375
申请日：2006-10-17
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： C03C15/00 , H01L21/461 , H01L21/302 , B44C1/22
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

9. 发明授权

US07132367B2 Polishing method 有权
标题翻译：抛光方法
公开(公告)号：US07132367B2
公开(公告)日：2006-11-07
申请号：US10441063
申请日：2003-05-20
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： H01L21/302
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要翻译：抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。在绝缘膜上形成的金属膜包括用包含氧化剂的抛光溶液和使氧化物水溶性但不含抛光磨料的物质抛光的凹槽。

10. 发明授权

US06596638B1 Polishing method 有权
标题翻译：抛光方法
公开(公告)号：US06596638B1
公开(公告)日：2003-07-22
申请号：US09618999
申请日：2000-07-18
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： H01L21302
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要翻译：抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。

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