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1. 发明授权

US06680541B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06680541B2
公开(公告)日：2004-01-20
申请号：US10050859
申请日：2002-01-18
申请人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
发明人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
IPC分类号： H01L23522
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
摘要翻译：至少含有硅原子，氧原子和碳原子的氧原子与硅原子的数量比为1.5以上，碳原子数与硅原子数之比为1〜2的金属间绝缘膜，具有膜厚收缩率在14％以下的氧化时，介电常数非常低，抗蚀剂蚀刻的选择性高，可以在半导体器件中不使用氧化硅保护膜的情况下使用。

2. 发明授权

US06358838B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06358838B2
公开(公告)日：2002-03-19
申请号：US09760777
申请日：2001-01-17
申请人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
发明人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
IPC分类号： H01L21311
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
摘要翻译：至少含有硅原子，氧原子和碳原子的氧原子与硅原子的数量比为1.5以上，碳原子数与硅原子数之比为1〜2的金属间绝缘膜，具有膜厚收缩率在14％以下的氧化时，介电常数非常低，抗蚀剂蚀刻的选择性高，可以在半导体器件中不使用氧化硅保护膜的情况下使用。

3. 发明授权

US07947596B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07947596B2
公开(公告)日：2011-05-24
申请号：US11526754
申请日：2006-09-26
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/00
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）nSiH 4-n表示的烷氧基硅烷（n为整数）的气体混合物形成 1〜3的范围，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括具有高可靠性和较少布线延迟时间的铜布线的半导体器件。

4. 发明申请

US20070018330A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070018330A1
公开(公告)日：2007-01-25
申请号：US11526754
申请日：2006-09-26
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）表示的烷氧基硅烷的气体混合物形成（n为 1〜3的整数，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括高可靠性和较少布线延迟时间的铜布线的半导体器件。

5. 发明授权

US07122900B2 Semiconductor device and method manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07122900B2
公开(公告)日：2006-10-17
申请号：US10276776
申请日：2001-05-28
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/44
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）表示的烷氧基硅烷的气体混合物形成（n为 1〜3的整数，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括具有高可靠性和较少布线延迟时间的铜布线的半导体器件。

6. 发明授权

US06903445B2 Semiconductor device having low-K insulating film 有权
标题翻译：具有低K绝缘膜的半导体器件
公开(公告)号：US06903445B2
公开(公告)日：2005-06-07
申请号：US10896885
申请日：2004-07-23
申请人： Daisuke Ryuzaki , Takeshi Furusawa
发明人： Daisuke Ryuzaki , Takeshi Furusawa
IPC分类号： H01L23/522 , H01L21/312 , H01L21/316 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40 , H01L31/0328
CPC分类号： H01L21/76826 , C23C16/0272 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/022 , H01L21/02216 , H01L21/02282 , H01L21/02321 , H01L21/0234 , H01L21/02362 , H01L21/312 , H01L21/3122 , H01L21/3143 , H01L21/3148 , H01L21/31629 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76807 , H01L21/76819 , H01L21/76822 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film formed successively on a semiconductor substrate, the semiconductor device being manufactured by applying a plasma treatment using a fluorine-containing gas to the surface of an organic siloxane film to form a modified layer and then forming a dielectric protection film, which can improve the adhesivity with the dielectric protection film without increasing the dielectric constant of the organic siloxane film to prevent delamination.
摘要翻译：公开了具有叠层结构的电介质膜的半导体器件，包括含有硅，氧和碳的低介电常数膜，用于含有硅，氧，碳和氟的低介电常数膜的改性层和相继形成的介电保护膜在半导体衬底上，半导体器件是通过使用含氟气体的等离子体处理施加到有机硅氧烷膜的表面上以形成改性层，然后形成电介质保护膜来制造的，这可以改善与电介质的粘附性保护膜不增加有机硅氧烷膜的介电常数，防止分层。

7. 发明授权

US06777325B2 Semiconductor manufacturing method for low-k insulating film 有权
标题翻译：低k绝缘膜的半导体制造方法
公开(公告)号：US06777325B2
公开(公告)日：2004-08-17
申请号：US10414010
申请日：2003-04-16
申请人： Daisuke Ryuzaki , Takeshi Furusawa
发明人： Daisuke Ryuzaki , Takeshi Furusawa
IPC分类号： H01L214763
CPC分类号： H01L21/76826 , C23C16/0272 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/022 , H01L21/02216 , H01L21/02282 , H01L21/02321 , H01L21/0234 , H01L21/02362 , H01L21/312 , H01L21/3122 , H01L21/3143 , H01L21/3148 , H01L21/31629 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76807 , H01L21/76819 , H01L21/76822 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film formed successively on a semiconductor substrate, the semiconductor device being manufactured by applying a plasma treatment using a fluorine-containing gas to the surface of an organic siloxane film to form a modified layer and then forming a dielectric protection film, which can improve the adhesivity with the dielectric protection film without increasing the dielectric constant of the organic siloxane film to prevent delamination.
摘要翻译：公开了具有叠层结构的电介质膜的半导体器件，包括含有硅，氧和碳的低介电常数膜，用于含有硅，氧，碳和氟的低介电常数膜的改性层和相继形成的介电保护膜在半导体衬底上，半导体器件是通过使用含氟气体的等离子体处理施加到有机硅氧烷膜的表面上以形成改性层，然后形成电介质保护膜来制造的，这可以改善与电介质的粘附性保护膜不增加有机硅氧烷膜的介电常数，防止分层。

8. 发明授权

US08158981B2 Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film, apparatus and member having silica-based coating film and photosensitizing agent for insulating film 失效
标题翻译：辐射敏感性组合物，形成二氧化硅系涂膜的方法，二氧化硅系涂膜，具有二氧化硅系涂膜的装置和构件以及绝缘膜用光敏剂
公开(公告)号：US08158981B2
公开(公告)日：2012-04-17
申请号：US12442789
申请日：2007-09-19
申请人： Kouichi Abe , Kei Kasuya , Tetsushi Maruyama , Yousuke Aoki , Kyouko Kojima , Daisuke Ryuzaki
发明人： Kouichi Abe , Kei Kasuya , Tetsushi Maruyama , Yousuke Aoki , Kyouko Kojima , Daisuke Ryuzaki
IPC分类号： H01L33/00 , H01L29/92 , G03C1/00 , G03F7/00 , B32B3/10
CPC分类号： G03F7/022 , G03F7/0233 , G03F7/0757 , Y10T428/24802
摘要： The present invention provides a photosensitive resin composition comprising a component (a): a siloxane resin obtained by hydrolyzing and condensing a silane compound comprising a compound represented by the general formula (1) shown below, a component (b): a solvent dissolving the component (a) therein, and a component (c): a quinonediazide sulfonic acid ester. wherein R1 represents an organic group; A represents a divalent organic group; and X represents a hydrolyzable group, wherein plural X groups in one molecule may be the same or different.
摘要翻译：本发明提供一种感光性树脂组合物，其含有成分（a）：将下述通式（1）表示的化合物的硅烷化合物水解缩合得到的硅氧烷树脂，成分（b）：溶解组分（a）和组分（c）：醌二叠氮磺酸酯。其中R1表示有机基团; A表示二价有机基团; X表示可水解基团，其中一个分子中的多个X基团可以相同或不同。

9. 发明授权

US07630043B2 Liquid display device and fabrication method thereof 有权
标题翻译：液体显示装置及其制造方法
公开(公告)号：US07630043B2
公开(公告)日：2009-12-08
申请号：US11777853
申请日：2007-07-13
申请人： Takashi Hattori , Daisuke Sonoda , Daisuke Ryuzaki , Kazuyoshi Torii
发明人： Takashi Hattori , Daisuke Sonoda , Daisuke Ryuzaki , Kazuyoshi Torii
IPC分类号： G02F1/1333
CPC分类号： G02F1/136213 , G02F1/134363 , G02F2001/133357 , G02F2202/38 , G02F2202/42
摘要： A liquid crystal display improved with the opening ratio and increased for the storage capacitance, in which a gate insulating film, a gate electrode, an interlayer insulating film, an image line and a source electrode are stacked in this order formed in the layer above an active device formed to a first substrate, the interlayer insulating film is formed with a coatable transparent insulating film having a specific dielectric constant of 4.0 or higher at least containing high dielectric fine particle or sol-gel, a first through hole is formed in the gate insulating film, a second through hole is formed to the interlayer insulating film in the inside of the first through hole, the source electrode is electrically connected with the active device by way of the second through hole, and the storage capacitance is constituted by the gate electrode, the image line, the source electrode, and the interlayer insulating film.
摘要翻译：液晶显示器的开口率提高，并且对于其中栅极绝缘膜，栅极电极，层间绝缘膜，图像线和源极电极以此顺序堆叠形成在上面的层中的存储电容而增加有源器件形成于第一衬底上，层间绝缘膜由至少包含高电介质微粒或溶胶 - 凝胶的比介电常数为4.0以上的可涂覆透明绝缘膜形成，在栅极中形成第一通孔绝缘膜，在第一通孔的内部形成有层间绝缘膜的第二贯通孔，源电极通过第二通孔与有源器件电连接，保持电容由栅极构成电极，图像线，源电极和层间绝缘膜。

10. 发明申请

US20070092661A1 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US20070092661A1
公开(公告)日：2007-04-26
申请号：US11583882
申请日：2006-10-20
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： C09K19/00
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

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