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1. 发明授权

US4976941A Process for oxidizing carbon monoxide in exhaust gas from a sintering furnace 失效
标题翻译：从烧结炉中排出废气中的一氧化碳的氧化方法
公开(公告)号：US4976941A
公开(公告)日：1990-12-11
申请号：US368984
申请日：1989-06-15
申请人： Takeo Tsunoda , Setsu Takeo , Tatsuya Nobusawa , Norihide Enomoto , Hiroyasu Takahashi , Minoru Watanabe , Yutaka Sasaki , Kunihiro Tanaka
发明人： Takeo Tsunoda , Setsu Takeo , Tatsuya Nobusawa , Norihide Enomoto , Hiroyasu Takahashi , Minoru Watanabe , Yutaka Sasaki , Kunihiro Tanaka
IPC分类号： B01D53/86 , B01D53/94 , B01J23/42 , B01J23/58
CPC分类号： B01J23/42 , B01D53/864
摘要： A catalyst in the form of a honeycomb structured cordierite carrier having platinum supported in a loading weight of at least 0.20 mg per square centimeter of the apparent outer surface area of the catalyst is effective in a process for oxidizing CO in exhaust gas from a sintering furance wherein it maintains high CO oxidiation efficiency for a longer period of time, requiring less frequently regeneration and less power consumption.
摘要翻译：催化剂形式为蜂窝状结构的堇青石载体，其载体负载量为催化剂表观外表面积至少0.20mg /平方厘米的载体重量，在烧结耐火材料的废气中氧化CO的方法是有效的其中它在更长的时间段内维持高CO氧化效率，需要较少的再生和较少的功率消耗。

2. 发明授权

US09190437B2 Semiconductor detection apparatus capable of switching capacitance among different levels, and detection system including the apparatus 有权
标题翻译：能够切换不同层次的电容的半导体检测装置，以及包括该装置的检测系统
公开(公告)号：US09190437B2
公开(公告)日：2015-11-17
申请号：US13610472
申请日：2012-09-11
申请人： Jun Kawanabe , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Kentaro Fujiyoshi , Hiroshi Wayama
发明人： Jun Kawanabe , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Kentaro Fujiyoshi , Hiroshi Wayama
IPC分类号： H01J40/14 , H01L27/146
CPC分类号： H01L27/14609 , H01L27/14665
摘要： A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.
摘要翻译：检测装置包括设置在基板上的晶体管，设置在晶体管上方并连接到晶体管的转换元件，与转换元件并联连接到晶体管的电容器，电容器包括在基板和转换元件之间的欧姆连接到转换元件的接触部分，连接到欧姆接触部分的半导体部分和经由绝缘层设置在与半导体部分和欧姆接触部分相对的位置处的导电部分，以及电位供给单元，被配置为选择性地向导电部分提供第一电位，以将半导体部件中的电荷载流子积累，并且向导电部件累积第二电位以耗尽半导体部件。以上述方式配置的检测装置能够控制像素电容，从而实现高的信噪比。

3. 发明授权

US08446495B2 Image pickup apparatus and image pickup system 有权
标题翻译：摄像设备和摄像系统
公开(公告)号：US08446495B2
公开(公告)日：2013-05-21
申请号：US12912690
申请日：2010-10-26
申请人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Jun Kawanabe , Kentaro Fujiyoshi
发明人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Jun Kawanabe , Kentaro Fujiyoshi
IPC分类号： H04N5/217 , G01D18/00
CPC分类号： H04N5/32 , H04N5/361 , H04N5/374
摘要： In an image pickup apparatus including a plurality of pixels arranged a matrix of rows and columns, a correction unit performs a correction process based on an electric signal output via a first switch element of a particular pixel and a correction electric signal output via a second switch element of the particular pixel. A correction image signal based on the correction electric signal output via the second switch element is acquired in a period that partially overlaps in time a period in which an image signal based on the electric signal output via the first switch element is acquired. When the electric signal associated with the image signal is output for the particular pixel, the second switch element of the particular pixel is controlled to be in an on-state over a period during which the first switch element of the particular pixel is in an off-state.
摘要翻译：在包括排列成行和列的矩阵的多个像素的图像拾取装置中，校正单元基于经由特定像素的第一开关元件输出的电信号和经由第二开关输出的校正电信号来执行校正处理特定像素的元素。基于经由第二开关元件输出的校正电信号的校正图像信号在获取基于经由第一开关元件输出的电信号的图像信号的时间段的时间部分重叠的时段中被获取。当针对特定像素输出与图像信号相关联的电信号时，特定像素的第二开关元件在特定像素的第一开关元件处于关闭状态的一段时间内被控制为导通状态 -州。

4. 发明申请

US20120306041A1 DETECTION DEVICE MANUFACTURING METHOD, DETECTION DEVICE, AND DETECTION SYSTEM 有权
标题翻译：检测装置制造方法，检测装置和检测系统
公开(公告)号：US20120306041A1
公开(公告)日：2012-12-06
申请号：US13477401
申请日：2012-05-22
申请人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
发明人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
IPC分类号： H01L31/0224
CPC分类号： H01L27/1461 , H01L27/1462 , H01L27/14676 , H01L27/14685 , H01L27/14692
摘要： In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.
摘要翻译：在制造包括衬底上的像素的检测装置的方法中，每个像素包括开关元件和包括电极上的杂质半导体层的转换元件，该电容器设置在开关元件上方并且每像素隔离开关元件和电极被连接在形成在保护层和层间绝缘层中的接触孔中，所述接触孔设置在开关元件和电极之间，该方法包括在与层间绝缘层接触的电极之间的层间绝缘层上形成绝缘构件形成覆盖所述绝缘构件和所述电极的杂质半导体膜，以及形成覆盖所述电极的一部分的正投影像的所述保护层的区域的覆盖层，所述部分包括所述触点内的电平差孔。

5. 发明申请

US20120305785A1 DETECTION DEVICE MANUFACTURING METHOD, DETECTION DEVICE, AND DETECTION SYSTEM 有权
标题翻译：检测装置制造方法，检测装置和检测系统
公开(公告)号：US20120305785A1
公开(公告)日：2012-12-06
申请号：US13477472
申请日：2012-05-22
申请人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
发明人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
IPC分类号： G01T1/24 , H01L27/14 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/1463 , H01L27/14676
摘要： In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.
摘要翻译：在制造包括排列在基板上的多个像素的检测装置的方法中，每个像素包括开关元件和转换元件，转换元件包括设置在开关元件上方的电极上的杂质半导体层，该杂质半导体层被隔离并且由连接到开关元件的透明导电氧化物制成，并且还包括设置在开关元件和电极之间的由有机材料制成并且覆盖开关的层间绝缘层元件，该方法包括各自由无机材料制成的绝缘构件，并设置成覆盖与层间绝缘层接触的相邻的两个电极之间的层间绝缘层，并且形成覆盖绝缘构件和电极的杂质半导体膜，并成为杂质半导体层。

6. 发明申请

US20120126126A1 RADIATION DETECTION APPARATUS AND RADIATION DETECTION SYSTEM 有权
标题翻译：辐射检测装置和辐射检测系统
公开(公告)号：US20120126126A1
公开(公告)日：2012-05-24
申请号：US13296105
申请日：2011-11-14
申请人： Keigo Yokoyama , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
发明人： Keigo Yokoyama , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
IPC分类号： G01T1/208 , G01T1/20
CPC分类号： G01T1/2928 , H01L27/14618 , H01L27/14632 , H01L27/14663 , H01L27/14676 , H01L2924/0002 , H01L2924/00
摘要： A radiation detection apparatus includes a scintillator configured to convert incident radiation into visible light, a photoelectric conversion unit and an electrically conductive member. The photoelectric conversion unit includes a two-dimensional array of pixels arranged on a substrate. Each pixel is configured to convert the visible light into an electric signal. The electrically conductive member is supplied with a fixed potential. The electrically conductive member, the substrate, the photoelectric conversion unit, and the scintillator are disposed in this order from the radiation-incident side of the radiation detection apparatus to the opposite side.
摘要翻译：辐射检测装置包括被配置为将入射的辐射转换成可见光的闪烁体，光电转换单元和导电构件。光电转换单元包括布置在基板上的二维像素阵列。每个像素被配置为将可见光转换成电信号。导电构件被提供固定电位。导电构件，基板，光电转换单元和闪烁体以从放射线检测装置的辐射入射侧到相对侧的顺序设置。

7. 发明申请

US20120126095A1 DETECTION APPARATUS AND RADIATION DETECTION SYSTEM 有权
标题翻译：检测装置和辐射检测系统
公开(公告)号：US20120126095A1
公开(公告)日：2012-05-24
申请号：US13295536
申请日：2011-11-14
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
IPC分类号： H01L27/14 , H01L31/0224
CPC分类号： H01L27/14658 , H01L27/14663 , H01L31/02322 , H01L31/105 , H01L31/119
摘要： A detection apparatus includes conversion elements and switch elements disposed below the conversion elements; insulating layers are disposed between the conversion elements and switch elements. Each conversion element includes a first electrode corresponding to a switch element. A second electrode extends over the plurality of conversion elements; and a semiconductor layer formed between the first electrodes and the second electrode extends over the plurality of conversion elements. Insulating layers include first regions located immediately below the first electrodes and a second region located between the first regions. A third electrode is disposed in the second region and between the insulating layers. The third electrode is supplied with a potential that sets a potential of a part where the second region is in contact with the semiconductor layer to a value between a potential of the second electrode and a potential of the first electrode.
摘要翻译：检测装置包括设置在转换元件下方的转换元件和开关元件; 绝缘层设置在转换元件和开关元件之间。每个转换元件包括对应于开关元件的第一电极。第二电极在多个转换元件上延伸; 并且形成在所述第一电极和所述第二电极之间的半导体层在所述多个转换元件上延伸。绝缘层包括位于第一电极正下方的第一区域和位于第一区域之间的第二区域。第三电极设置在第二区域和绝缘层之间。第三电极被提供有将第二区域与半导体层接触的部分的电位设定为第二电极的电位和第一电极的电位之间的值的电位。

8. 发明授权

US08067743B2 Imaging apparatus and radiation imaging apparatus 有权
标题翻译：成像设备和放射成像设备
公开(公告)号：US08067743B2
公开(公告)日：2011-11-29
申请号：US12095674
申请日：2007-01-11
申请人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
发明人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
IPC分类号： G01T1/24
CPC分类号： G01T1/2018 , H01L27/14603 , H01L27/14632 , H01L27/14663
摘要： Pixels including a photoelectric conversion element 1, a signal transfer TFT (thin film transistor) 2 electrically connected to the photoelectric conversion element, and a reset TFT 3 electrically connected to the photoelectric conversion element and for applying a bias to the photoelectric conversion element are two-dimensionally disposed on the insulating substrate, and the photoelectric conversion element 1, signal transfer TFT 2, and reset TFT 3 are electrically connected through a common contact hole 9. A source or drain electrode of the signal transfer TFT 2 and the source or drain electrode of the reset TFT 3 are formed from a common electroconductive layer.
摘要翻译：电连接到光电转换元件的光电转换元件1，信号转移TFT（薄膜晶体管）2和与光电转换元件电连接并用于向光电转换元件施加偏压的复位TFT 3的像素是两个并且光电转换元件1，信号传输TFT 2和复位TFT 3通过公共接触孔9电连接。信号传输TFT 2的源极或漏极和源极或漏极复位TFT 3的电极由公共导电层形成。

9. 发明授权

US08054670B2 Reconfiguration controlling apparatus for optically reconfigurable gate array and method thereof 有权
标题翻译：用于光可重构门阵列的重配置控制装置及其方法
公开(公告)号：US08054670B2
公开(公告)日：2011-11-08
申请号：US12310487
申请日：2007-08-01
申请人： Minoru Watanabe , Fuminori Kobayashi
发明人： Minoru Watanabe , Fuminori Kobayashi
IPC分类号： G11C13/04
CPC分类号： H03K19/173
摘要： [PROBLEMS] To provide a reconfiguration controller of an optically reconfigurable gate array for correctly and reliably writing various types of logical operation circuits of an optically reconfigurable gate array and performing high-speed logical operation by quickly starting up the circuits. [MEANS FOR SOLVING PROBLEMS] A reconfiguration controller comprises a laser array (1) for producing a laser beam (1a) to serve as a reproducing beam and applying the laser beam (1a), a hologram memory (2) for outputting an optical pattern (2a) when receiving the laser beam (1a) according to pre-stored recording information and outputting a control signal light (2b) relating to optical reconfiguration by the optical pattern (2a), an optically reconfigurable gate array (3) for reconfiguring arrayed logical operation cells into various logical operation circuits according to the outputted optical pattern (2a), and outputting an optical control signal (S3) from the control signal light (2b), and a reproduction light application control means (4) for controlling the application of the laser beam (1a) emitted from the laser array (1) according to the optical control signal. Therefore, optical pattern application can be performed according to the optical control signal at a reconfiguration time adapted to any of various logical operation circuits sequentially reconfigured by the optically reconfigurable gate array. Consequently, correct and reliable write of any one of various types of logical operation circuits can be performed without any write error, and such various types of logical operation circuits can perform logical operation sequentially at high speed.
摘要翻译：提供一种光学可重构门阵列的重新配置控制器，用于正确且可靠地写入光学可重构门阵列的各种类型的逻辑运算电路，并通过快速启动电路来执行高速逻辑运算。解决问题的手段重新配置控制器包括用于产生激光束（1a）以用作再现光束并施加激光束（1a）的激光阵列（1），用于输出光学图案的全息存储器（2）（2a），当根据预先存储的记录信息接收激光束（1a）并且输出与所述光学图案（2a）相关的光学重新配置的控制信号光（2b）时，用于重配置的光学可重构门阵列（3）根据输出的光学图案（2a）将逻辑运算单元转换成各种逻辑运算电路，并从控制信号光（2b）输出光控制信号（S3）;以及再现光应用控制单元（4），用于控制应用根据光学控制信号从激光阵列（1）发射的激光束（1a）。因此，可以根据光控制信号，在适于由光学可重构门阵列顺序重新配置的各种逻辑运算电路中的任何一个的重新配置时间执行光学图案应用。因此，可以执行各种类型的逻辑运算电路中的任一种的正确可靠的写入而没有任何写入错误，并且这种各种类型的逻辑运算电路可以高速顺序地执行逻辑运算。

10. 发明申请

US20110114846A1 RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM 有权
标题翻译：辐射成像装置和辐射成像系统
公开(公告)号：US20110114846A1
公开(公告)日：2011-05-19
申请号：US13010226
申请日：2011-01-20
申请人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Masakazu Morishita
发明人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Masakazu Morishita
IPC分类号： G01T1/24 , H01L31/112
CPC分类号： G01T1/241 , H01L27/14632 , H01L27/14658 , H01L27/14659 , H01L27/14663
摘要： A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.
摘要翻译：辐射成像装置包括在绝缘基板100上的像素区域，该像素区域包括排列成矩阵的多个像素，每个像素具有将辐射转换成电荷的转换元件101和连接到转换元件101的开关元件102。转换元件101具有上电极层119，下电极层115，布置在上电极层119和下电极层115之间的半导体层117.上电极层119或下电极层115具有开口200 至少在布置有半导体层117的区域内。

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