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1. 发明授权

US4367483A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US4367483A
公开(公告)日：1983-01-04
申请号：US192991
申请日：1980-10-02
申请人： Takeo Takahashi , Kazuhiro Kurata , Yuichi Ono , Kazuhiro Ito , Makoto Morioka , Mitsuhiro Mori , Ginro Takemura , Makoto Sakamoto , Masahiro Ichiki , Youichi Yasuda , Hirobumi Ouchi
发明人： Takeo Takahashi , Kazuhiro Kurata , Yuichi Ono , Kazuhiro Ito , Makoto Morioka , Mitsuhiro Mori , Ginro Takemura , Makoto Sakamoto , Masahiro Ichiki , Youichi Yasuda , Hirobumi Ouchi
IPC分类号： G02B6/42 , H01L27/15 , H01L31/12
CPC分类号： H04B10/40 , G02B6/4246 , H01L25/167 , H01L31/12 , H01L2924/0002
摘要： An optical semiconductor device includes a light emitting element disposed on a silicon sub-mount having a light receiving element formed in a surface region. By virtue of integral arrangement of the light emitting element and the light receiving element, a single lens can be used for both optical transmission and optical reception, whereby an optical communication system can be manufactured very inexpensively. Further, transmission and reception can be carried out simultaneously.
摘要翻译：光学半导体器件包括设置在具有形成在表面区域中的光接收元件的硅子座上的发光元件。通过发光元件和光接收元件的整体布置，可以将单个透镜用于光传输和光接收两者，从而可以非常便宜地制造光通信系统。此外，可以同时进行发送和接收。

2. 发明授权

US4212021A Light emitting devices 失效
标题翻译：发光装置
公开(公告)号：US4212021A
公开(公告)日：1980-07-08
申请号：US41318
申请日：1979-05-22
申请人： Yuichi Ono , Mitsuhiro Mori , Makoto Morioka , Kazuhiro Ito , Masahiko Kawata , Kazuhiro Kurata
发明人： Yuichi Ono , Mitsuhiro Mori , Makoto Morioka , Kazuhiro Ito , Masahiko Kawata , Kazuhiro Kurata
IPC分类号： G02B6/42 , H01L33/00 , H01L33/14 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/48 , H01L33/58
CPC分类号： H01L33/20 , G02B6/4202 , H01L33/0025 , H01L33/24 , H01L33/0079 , H01L33/145 , H01L33/38 , H01L33/483 , H01L33/58
摘要： In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction becomes larger in area than the region into which current is introduced, on account of the current spreading phenomenon. The construction of a light emitting device free from the phenomenon and a method for manufacturing the light emitting device are disclosed.
摘要翻译：在现有技术的注入型发光器件中，其结构使得由半导体衬底形成的pn结的预定范围和设置在其上的外延层可以辐射，pn结中的辐射区域的面积比区域由于目前的传播现象，引入了电流。公开了一种没有现象的发光器件的结构和用于制造发光器件的方法。

3. 发明授权

US4122486A Semiconductor light-emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US4122486A
公开(公告)日：1978-10-24
申请号：US771576
申请日：1977-02-24
申请人： Yuichi Ono , Makoto Morioka , Kazuhiro Ito , Mitsuhiro Mori , Masahiko Kawata , Kazuhiro Kurata
发明人： Yuichi Ono , Makoto Morioka , Kazuhiro Ito , Mitsuhiro Mori , Masahiko Kawata , Kazuhiro Kurata
IPC分类号： H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/0025
摘要： A light emitting element made of a group III - V compound semiconductor has a p-n junction and a hetero-junction which are identical; the mixing ratio (band gap) of a p-type layer on the light emitting side is sufficiently smaller than that of an n-type layer on the opposite side. The semiconductor light-emitting element is especially useful as a light source, for optical communications, photoexcitation, etc.
摘要翻译：由III-V族化合物半导体制成的发光元件具有相同的p-n结和异质结; 发光侧的p型层的混合比（带隙）比相对侧的n型层的混合比（带隙）充分小。半导体发光元件作为光源特别有用，用于光通信，光激发等。

4. 发明授权

US3960618A Epitaxial growth process for compound semiconductor crystals in liquid phase 失效
标题翻译：化合物半导体晶体在液相中的外延生长过程
公开(公告)号：US3960618A
公开(公告)日：1976-06-01
申请号：US561795
申请日：1975-03-25
申请人： Masao Kawamura , Kazuhiro Ito , Makoto Morioka , Yuichi Ono , Sachio Ishioka , Kazuhiro Kurata
发明人： Masao Kawamura , Kazuhiro Ito , Makoto Morioka , Yuichi Ono , Sachio Ishioka , Kazuhiro Kurata
IPC分类号： B60C9/20 , C30B19/00 , C30B19/12 , C30B29/40 , H01L21/208 , H01L33/28 , H01L33/30 , H01L7/38
CPC分类号： B60C9/2009 , C30B19/12 , H01L21/02392 , H01L21/02395 , H01L21/02433 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , Y10S438/955
摘要： In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.
摘要翻译：在液相中化合物半导体晶体的外延生长工艺中，使基板晶体与含有预定量的至少一种基板晶体成分的溶质作为溶质接触，所述至少一种成分比饱和溶液在使晶体生长的温度下加热。衬底晶体在足以去除衬底晶体的表面部分的时间段内与溶液保持接触。然后使衬底晶体与用于晶体生长的溶液接触，所述溶液含有要作为溶质生长的物质，并且物质的晶体在衬底晶体的暴露的清洁表面上外延生长。

5. 发明授权

US4183039A Light emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US4183039A
公开(公告)日：1980-01-08
申请号：US913055
申请日：1978-06-06
申请人： Masaaki Aoki , Yuichi Ono , Makoto Morioka , Kazuhiro Ito , Mitshiuro Mori , Kazuhiro Kurata
发明人： Masaaki Aoki , Yuichi Ono , Makoto Morioka , Kazuhiro Ito , Mitshiuro Mori , Kazuhiro Kurata
IPC分类号： H01L21/22 , H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0008
摘要： A light emitting semiconductor device wherein a p-n junction is defined by a ditch and wherein the ditch either extends to a low resistance layer or is away from the low resistance layer at most 1/2 of the width of the ditch is disclosed. It has the merit that the near field pattern is much more uniform than in a prior-art device.
摘要翻译：一种发光半导体器件，其中p-n结由沟道限定，并且其中沟槽或者延伸到低电阻层或远离沟槽的至多1/2宽度的低电阻层。具有近场图案比现有技术装置更均匀的优点。

6. 发明授权

US4017881A Light emitting semiconductor device and a method for making the same 失效
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US4017881A
公开(公告)日：1977-04-12
申请号：US612282
申请日：1975-09-11
申请人： Yuichi Ono , Kazuhiro Kurata , Masao Kawamura , Makoto Morioka , Kazuhiro Ito
发明人： Yuichi Ono , Kazuhiro Kurata , Masao Kawamura , Makoto Morioka , Kazuhiro Ito
IPC分类号： H01L21/22 , H01L33/14 , H01L33/30 , H01L33/40 , H01S3/19
CPC分类号： H01L33/20 , H01L33/00 , H01L33/0008 , H01L33/0062 , Y10S148/049 , Y10S148/051 , Y10S148/072 , Y10S148/085
摘要： In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.
摘要翻译：在制造具有半球形圆顶型几何形状的发光器件的方法中，p型导电型和n型导电型层在由混合化合物半导体晶体制成的衬底上外延连续地生长，所述混合化合物半导体晶体的带隙宽于二上述层。这些外延生长层的表面部分未被掩模在沉积在n导电型层上的p型结的位置处的掩模覆盖，其中p型结被掺杂有p导电型杂质，导电类型区域被转换为p导电型的区域包围。晶体的另一侧形成为半球形状，使得n导电型区域位于半球的中心部分。

7. 发明授权

US4280131A Pleochroic light emitting diode and method of fabricating the same 失效
标题翻译：多色发光二极管及其制造方法
公开(公告)号：US4280131A
公开(公告)日：1981-07-21
申请号：US018330
申请日：1979-03-07
申请人： Yuichi Ono , Kazuhiro Ito , Mitsuhiro Mori , Masaaki Aoki , Kazuhiro Kurata
发明人： Yuichi Ono , Kazuhiro Ito , Mitsuhiro Mori , Masaaki Aoki , Kazuhiro Kurata
IPC分类号： H01L27/15 , H01L33/08 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/0025 , H01L27/15
摘要： A planar-type pleochroic light emitting diode and a method of fabricating the same are disclosed, the diode allowing from a single chip a plurality of light emissions having different center wavelengths. Impurity diffusion is carried out by use of a film having a masking effect to an impurity and a different film partially non-uniform in thickness having no masking effect to the impurity to form a plurality of diffusion regions having different depths. The diode has excellent coupling with an optical fiber, can be easily fabricated and is suitable for use in optical multiplex communication.
摘要翻译：公开了平面型双色度发光二极管及其制造方法，二极管允许单个芯片具有不同中心波长的多个发光体。通过使用对杂质具有掩蔽效应的膜和对杂质没有掩蔽效应的部分不均匀的厚度不同的膜来形成多个具有不同深度的扩散区域来进行杂质扩散。该二极管具有与光纤的良好耦合，可以容易地制造并且适用于光学多路复用通信。

8. 发明授权

US4740819A Photo semiconductor device 失效
标题翻译：照片半导体器件
公开(公告)号：US4740819A
公开(公告)日：1988-04-26
申请号：US680118
申请日：1986-06-30
申请人： Hirobumi Ouchi , Hiroshi Matsuda , Makoto Morioka , Masahiko Kawata , Kazuhiro Kurata , Yasushi Koga
发明人： Hirobumi Ouchi , Hiroshi Matsuda , Makoto Morioka , Masahiko Kawata , Kazuhiro Kurata , Yasushi Koga
IPC分类号： H01L31/00 , H01L31/107 , H01L29/90
CPC分类号： H01L31/1075
摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate, at least a first semiconductor layer which exhibits a first conductivity type, a second semiconductor layer which is disposed on said first semiconductor layer, which has a forbidden band gap greater than that of said first semiconductor layer and which exhibits the first conductivity type, and a p-n junction which is formed by a region disposed in said second semiconductor layer and exhibiting a second conductivity type; characterized by comprising a third semiconductor layer which is disposed on said second semiconductor layer, which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer is usually made of a group III-V compound semiconductor of a quaternary system. By way of example, in a case where the first semiconductor layer is formed of InGaAsP and where the second semiconductor layer is formed of InP, the third semiconductor layer is made of InGaAsP, InGaAs or the like. A photo-detective semiconductor device of low dark current can be provided.
摘要翻译：公开了一种光检测半导体器件，其在预定半导体衬底上具有至少第一导电类型的第一半导体层，设置在所述第一半导体层上的禁止带隙大于第二半导体层的第二半导体层，所述第一半导体层的表面具有第一导电类型，以及pn结，其由设置在所述第二半导体层中并呈现第二导电类型的区域形成; 其特征在于包括：第三半导体层，其设置在所述第二半导体层上，其具有第一导电类型并具有表面保护功能。第三半导体层通常由四元系的III-V族化合物半导体制成。作为示例，在第一半导体层由InGaAsP形成且第二半导体层由InP形成的情况下，第三半导体层由InGaAsP，InGaAs等构成。可以提供低暗电流的光检测半导体器件。

9. 发明授权

US4000716A Epitaxial growth device 失效
标题翻译：外延生长装置
公开(公告)号：US4000716A
公开(公告)日：1977-01-04
申请号：US171250
申请日：1971-08-12
申请人： Kazuhiro Kurata , Kozi Honma , Masahiko Ogirima , Yuichi Ono , Yoshiteru Keikoin
发明人： Kazuhiro Kurata , Kozi Honma , Masahiko Ogirima , Yuichi Ono , Yoshiteru Keikoin
IPC分类号： C23C16/30 , C30B25/02 , C30B25/14 , C30B29/40 , H01L21/205 , B05C11/00 , B01J17/32 , C23C13/08
CPC分类号： C30B25/02 , C30B25/14 , C30B29/40
摘要： A longitudinal epitaxial growth device for making a mixed crystal of III.sub.b -V.sub.b group intermetallic compound semiconductor in which a means for inverting the reaction gas flow is disposed between the gallium source and the substrate, the height of the device is reduced, and the length of the gas mixing band is made sufficiently long.
摘要翻译：用于制造IIIb-Vb族金属间化合物半导体的混晶的纵向外延生长装置，其中用于使反应气流反转的装置设置在镓源和衬底之间，器件的高度减小，使气体混合带足够长。

10. 发明授权

US4161701A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4161701A
公开(公告)日：1979-07-17
申请号：US780789
申请日：1977-03-24
申请人： Yutaka Takeda , Satoshi Nakamura , Naoki Chinone , Hisao Nakashima , Kazuhiro Kurata
发明人： Yutaka Takeda , Satoshi Nakamura , Naoki Chinone , Hisao Nakashima , Kazuhiro Kurata
IPC分类号： H01L23/48 , H01S5/00 , H01S5/024 , H01S5/042 , H01S5/20 , H01S5/22 , H01S3/19
CPC分类号： H01S5/20 , H01S5/024 , H01L33/642 , H01S5/0224 , H01S5/02272 , H01S5/2059
摘要： A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.
摘要翻译：形成用于支撑半导体激光器的二极管芯片的半导体层高于包含导电区域的半导体层，由此安装二极管芯片的作用在二极管芯片上的应力减轻以防止性能下降和寿命缩短的半导体激光器。

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