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1. 发明授权

US4585537A Process for producing continuous insulated metallic substrate 失效
标题翻译：连续绝缘金属基板的制造工艺
公开(公告)号：US4585537A
公开(公告)日：1986-04-29
申请号：US677773
申请日：1984-12-03
申请人： Takehisa Nakayama , Kunio Nishimura , Kazunori Tsuge , Yoshihisa Tawada
发明人： Takehisa Nakayama , Kunio Nishimura , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H05K3/44 , C23C14/02 , C23C14/56 , C23C16/02 , C23C16/54 , H01L31/0392 , H01L31/04 , H01L31/18 , H01L31/20 , H05K1/05 , C25B11/04
CPC分类号： C23C16/545 , C23C14/021 , C23C14/562 , C23C16/02 , C23C16/0227 , H01L31/0392 , H01L31/1876 , H01L31/206 , H05K1/053 , Y02E10/50 , Y02P70/521
摘要： A process for producing a continuous web of an insulated metallic substrate, comprising the steps of depositing an insulation layer on a continuous web of a metallic substrate by plasma CVD method or sputtering method, and depositing a back electrode on the insulation layer by sputtering method or vapor deposition method. According to the present invention, the insulated metallic substrate for a solar cell or printed circuit board can be produced in a continuous manner and in high productivity and quality.
摘要翻译：一种用于制造绝缘金属基底的连续腹板的方法，包括以下步骤：通过等离子体CVD法或溅射法在金属基底的连续腹板上沉积绝缘层，并通过溅射法或在溅射方法上在绝缘层上沉积背电极; 气相沉积法。根据本发明，太阳能电池或印刷电路板的绝缘金属基板可以连续地且高生产率和高质量地制造。

2. 发明授权

US5032884A Semiconductor pin device with interlayer or dopant gradient 失效
标题翻译：具有中间层或掺杂剂梯度的半导体针器件
公开(公告)号：US5032884A
公开(公告)日：1991-07-16
申请号：US477138
申请日：1990-02-07
申请人： Hideo Yamagishi , Masataka Kondo , Kunio Nishimura , Akihiko Hiroe , Keizou Asaoka , Kazunori Tsuge , Yoshihisa Tawada , Minori Yamaguchi
发明人： Hideo Yamagishi , Masataka Kondo , Kunio Nishimura , Akihiko Hiroe , Keizou Asaoka , Kazunori Tsuge , Yoshihisa Tawada , Minori Yamaguchi
IPC分类号： H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type semiconductor layer. According to the semiconductor device of the present invention (in the case of (1) or (2)), large Voc and electric current at a specific voltage can be obtained, further in the case of (3), photoelectric conversion efficiency can be improved.

3. 发明授权

US5127964A Flexible photovoltaic device 失效
标题翻译：柔性光伏器件
公开(公告)号：US5127964A
公开(公告)日：1992-07-07
申请号：US652492
申请日：1991-02-08
申请人： Yoshihiro Hamakawa , Yoshihisa Tawada , Kazunori Tsuge , Masanobu Izumina
发明人： Yoshihiro Hamakawa , Yoshihisa Tawada , Kazunori Tsuge , Masanobu Izumina
IPC分类号： H01L27/142 , H01L31/0392 , H01L31/042 , H01L31/075 , H01L31/20
CPC分类号： H01L31/202 , H01L31/03921 , H01L31/03926 , H01L31/0445 , H01L31/0504 , H01L31/075 , Y02E10/548 , Y02P70/521
摘要： A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..multidot.cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.
摘要翻译：柔性光伏器件包括柔性衬底和光伏器件本体。柔性基板是金属箔或薄膜，在光入射时具有导电率不大于10-7（OMEGA×cm。）-1的材料的电绝缘层，并选自耐热聚合物，金属氧化物，结晶或非晶硅化合物和有机金属化合物。

4. 发明授权

US5264710A Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals 失效
标题翻译：非晶半导体，使用氢自由基的非晶半导体器件
公开(公告)号：US5264710A
公开(公告)日：1993-11-23
申请号：US864944
申请日：1992-04-07
申请人： Hideo Yamagishi , Akihiko Hiroe , Hitoshi Nishio , Keiko Miki , Kazunori Tsuge , Yoshihisa Tawada
发明人： Hideo Yamagishi , Akihiko Hiroe , Hitoshi Nishio , Keiko Miki , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L21/205 , H01L21/30 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/3003 , H01L31/204 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.
摘要翻译：在形成薄膜期间或之后，将非晶半导体薄膜暴露于氢自由基的气氛中，或者在形成时在300-700nm的波长下进行密度不小于10W / cm 2的光照射薄膜。获得的薄膜具有改善的，即较小的光劣化。使用上述薄膜的半导体器件优选地应用于太阳能电池或薄膜晶体管。

5. 发明授权

US4476346A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4476346A
公开(公告)日：1984-10-09
申请号：US465016
申请日：1983-02-08
申请人： Yoshihisa Tawada , Kazunori Tsuge
发明人： Yoshihisa Tawada , Kazunori Tsuge
IPC分类号： H01L31/04 , H01L31/0392 , H01L31/052 , H01L31/075 , H01L31/06
CPC分类号： H01L31/0392 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A PIN junction photovoltaic device using a P-type or N-type semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10.sup.-8 (.OMEGA..multidot.cm).sup.-1 at 20.degree. C. in the layer positioned on the side opposite to incidence of light. The photovoltaic device has an improved efficiency.
摘要翻译：在20℃下使用具有不小于约1.8eV的光学带隙和不小于约10-8（欧米加×cm）-1）的暗电导率的P型或N型半导体的PIN结光电器件。在位于与光入射相反的一侧的层中。光伏器件具有提高的效率。

6. 发明授权

US5124269A Method of producing a semiconductor device using a wire mask having a specified diameter 失效
标题翻译：使用规定直径的线掩模制造半导体器件的方法
公开(公告)号：US5124269A
公开(公告)日：1992-06-23
申请号：US633192
申请日：1990-12-28
申请人： Kenji Kobayashi , Kazunori Tsuge , Yoshihisa Tawada
发明人： Kenji Kobayashi , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L31/042 , H01L31/0224 , H01L31/04 , H01L31/20
CPC分类号： H01L31/022425 , H01L31/202 , Y02E10/50 , Y02P70/521 , Y10S438/942
摘要： A semiconductor device producing method wherein a patterned transparent electrode, a patterned amorphous silicon semiconductor layer and a patterned backside electrode are formed on a substrate sequentially in this order, and the patterning of at least one of the amorphous silicon semiconductor layer and the backside electrode is carried out in a step of forming at least one of the amorphous silicon semiconductor layer and the backside electrode with a wire mask being brought into substantially close contact with a surface subjected to film forming and a step of removing a thin film formed at a region between the wire mask and the surface subjected to film forming in the forming step; and a film forming apparatus used in the producing method comprising a holder which holds a substrate having a surface subjected to film forming, a mechanism for fixing and positioning the substrate on the holder and a plurality of wires which are disposed on the film forming surface side of the substrate and are to be brought into substantially close contact with the film forming surface. The method and the apparatus enable the film forming operation and the patterning operation to be carried out simultaneously without lowering the characteristics of a solar cell.

7. 发明授权

US4956023A Integrated solar cell device 失效
标题翻译：集成太阳能电池装置
公开(公告)号：US4956023A
公开(公告)日：1990-09-11
申请号：US286180
申请日：1989-01-27
申请人： Kazunori Tsuge , Toshihito Endo , Kenji Kobayashi , Yoshihisa Tawada
发明人： Kazunori Tsuge , Toshihito Endo , Kenji Kobayashi , Yoshihisa Tawada
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0224
CPC分类号： H01L31/022466 , H01L31/022425 , H01L31/046 , Y02E10/50
摘要： An integrated solar cell device characterized in that a plurality of amorphous silicon solar cells, each having a transparent electrode on the light impinging side and a metal electrode on the side opposite of the light impinging side, are placed on a transparent substrate. The plurality of solar cells are connected in series or series-parallel using the transparent electrodes and the metal electrodes thereof, wherein at least a conductive anti-oxidation film is formed at the series connection part between the transparent electrode and the metal electrode. According to the integrated solar cell device of the present invention, the transparent electrode is prevented from oxidizing the metal electrode, so that the contact resistance is prevented from increasing and the output of the solar cell device can be prevented from decreasing. Consequently, the life of the solar cell device is extended, such that the output of the solar cell device can be maintained in the designed range for a long period.
摘要翻译： PCT No.PCT / JP88 / 00319 Sec。 371日期1989年1月27日第 102（e）日期1989年1月27日PCT提交1988年3月30日PCT公布。出版物WO88 / 07768 日期：1988年10月6日。一种集成太阳能电池装置，其特征在于，在光入射侧具有透明电极的多个非晶硅太阳能电池和位于与光入射侧相反一侧的金属电极放置在透明基材。多个太阳能电池使用透明电极及其金属电极串联或串联并联，其中在透明电极和金属电极之间的串联连接部分至少形成导电性抗氧化膜。根据本发明的集成太阳能电池装置，能够防止透明电极氧化金属电极，防止接触电阻增加，能够防止太阳能电池装置的输出降低。因此，延长了太阳能电池装置的寿命，使得太阳能电池装置的输出能够长时间保持在设计范围内。

8. 发明授权

US4825806A Film forming apparatus 失效
标题翻译：成膜装置
公开(公告)号：US4825806A
公开(公告)日：1989-05-02
申请号：US74594
申请日：1987-07-17
申请人： Yoshihisa Tawada , Kazunori Tsuge
发明人： Yoshihisa Tawada , Kazunori Tsuge
IPC分类号： C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32532
摘要： A process for forming a film, characterized in that, in forming a film by glow discharge decomposition, one or more electrode pair rows each consisting of a plurality of high frequency electrode pairs are arranged in a line and in parallel and substrates are arranged on both sides of said electrode pair row approximately in parallel to the electrode pair row. According to the process, damage of the film due to plasma can be reduced, a shield on the back of the RF electrode is not needed, and a film of a large area can be obtained.
摘要翻译：一种形成膜的方法，其特征在于，在通过辉光放电分解形成膜时，由多个高频电极对组成的一个或多个电极对行被排列成一行并联并且基板被布置在两个所述电极对排的侧面大致平行于电极对排。根据该过程，可以减少由于等离子体引起的膜的损伤，不需要RF电极背面的屏蔽，并且可以获得大面积的膜。

9. 发明授权

US4701344A Film forming process 失效
标题翻译：成膜工艺
公开(公告)号：US4701344A
公开(公告)日：1987-10-20
申请号：US800638
申请日：1985-10-15
申请人： Yoshihisa Tawada , Kazunori Tsuge
发明人： Yoshihisa Tawada , Kazunori Tsuge
IPC分类号： H01L31/04 , C23C16/509 , H01J37/32 , H01L21/205 , H01L31/20 , B05D3/06
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32532 , H01J37/32623 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for forming a film, characterized in that, in forming a film by glow discharge decomposition, one or more electrode pair rows each consisting of a plurality of high frequency electrode pairs are arranged in a line and in parallel and substrates are arranged on both sides of said electrode pair row approximately in parallel to the electrode pair row. According to the process, damage of the film due to plasma can be reduced, a shield on the back of the RF electrode is not needed, and a film of a large area can be obtained.
摘要翻译： PCT No.PCT / JP85 / 00064 Sec。 371日期1985年10月15日第 102（e）1985年10月15日PCT PCT申请日1985年2月15日PCT公布。公开号WO85 / 03803 日期：1985年8月29日。1。一种形成膜的方法，其特征在于，在通过辉光放电分解形成膜时，由多个高频电极对组成的一个或多个电极对排排列成一行平行的和基板被布置在大致平行于电极对列的所述电极对行的两侧。根据该过程，可以减少由于等离子体引起的膜的损伤，不需要RF电极背面的屏蔽，并且可以获得大面积的膜。

10. 发明授权

US4926230A Multiple junction solar power generation cells 失效
标题翻译：多结太阳能发电池
公开(公告)号：US4926230A
公开(公告)日：1990-05-15
申请号：US377745
申请日：1989-07-10
申请人： Hideo Yamagishi , Minori Yamaguchi , Keizo Asaoka , Akihiko Hiroe , Masataka Kondo , Kazunori Tsuge , Yoshihisa Tawada
发明人： Hideo Yamagishi , Minori Yamaguchi , Keizo Asaoka , Akihiko Hiroe , Masataka Kondo , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/076 , H01L31/03762 , Y02E10/548
摘要： A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.
摘要翻译：具有多结的非晶或微晶半导体的光电器件，其中包含高浓度杂质的一层或多层包含在p型导电层和n型导电层之间。由插入层形成隧道结，以提高光电转换速率。

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