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    • 7. 发明申请
    • Sound Generating Apparatus
    • 发声装置
    • US20080037820A1
    • 2008-02-14
    • US11791522
    • 2005-11-24
    • Keiji Koga
    • Keiji Koga
    • H04R1/00
    • H04R5/023
    • An object of the invention is to provide a sound generating apparatus which reproduces sound, such as music or voice, from a sound generating member, such as a flower or a tree. A sound generating apparatus 10 includes a vibration unit 11 and a drive unit 14. The vibration unit 11 includes a vibration member 12 to be attached to a sound generating member 1 and a solenoid coil 13 wound around the vibration member 12. The drive unit 14 includes a magnet 15 and a bottom part 17b, a trunk part 17a, and a top part 17c. The magnet 15 is provided at one end with respect to the axial direction of the core member, and opposes one lateral face of the solenoid coil. The bottom part 17b is provided so as to oppose the vibration member 12 with interposing the magnet 15 between the bottom part 17b and the vibration member 12, the trunk part 17a is in the form of a cylinder, extending from the outer part of the bottom part 17b so that the trunk part 17a covers the outer peripheries of the vibration unit 11 and the magnet 15. The top part 17c extends from an end of the trunk part 17a in the direction of the diameter so as to oppose the second lateral face of the solenoid coil 13.
    • 本发明的目的是提供一种从诸如花或树之类的声音产生部件再现诸如音乐或声音的声音的声音产生装置。 发声装置10包括振动单元11和驱动单元14。 振动单元11包括附接到声音发生构件1的振动构件12和缠绕在振动构件12上的螺线管线圈13。 驱动单元14包括磁体15和底部17b,主体部分17a和顶部部分17c。 磁体15相对于芯构件的轴向设置在一端,并与电磁线圈的一个侧面相对。 底部17b设置成与底部17b和振动部件12之间插入磁体15而与振动部件12相对,主体部分17a为圆筒状,从外侧部分 使得主体部分17a覆盖振动单元11的外周和磁体15。 顶部17c从主体部分17a的端部沿着直径方向延伸,以与电磁线圈13的第二侧面相对。
    • 8. 发明申请
    • Magnetic storage cell and magnetic memory device
    • 磁存储单元和磁存储器件
    • US20060279980A1
    • 2006-12-14
    • US10568808
    • 2004-08-18
    • Susumu HarataniKeiji KogaJoichiro Ezaki
    • Susumu HarataniKeiji KogaJoichiro Ezaki
    • G11C11/00
    • H01L27/224G11C11/16H01L43/08
    • To provide a magnetic memory cell that is capable of efficiently changing the magnetization directions of magneto-sensitive layers. A magnetic memory cell comprises an annular magnetic layer 4a through which extends a write bit line 5a that generates a magnetic field, and a TMR film S20a configured so as to include: a first magneto-sensitive layer 14a, a magnetization direction of which is changed by the magnetic field in the annular magnetic layer 4a; and a magnetoresistive effect revealing body 20a disposed on a surface of the first magneto-sensitive layer 14a so that an electric current flows in a direction perpendicular to a laminating surface of the laminate, and the first magneto-sensitive layer 14a has a thickness thereof set in a range of not less than 0.5 nm to not more than 40 nm.
    • 提供能够有效地改变感磁层的磁化方向的磁存储单元。 磁存储单元包括环形磁性层4a,通过该环形磁性层延伸产生磁场的写入位线5a;以及TMR膜S 20a,被配置为包括:第一磁敏层14a,磁化 其方向由环形磁性层4a中的磁场改变; 以及设置在第一感应层14a的表面上的电磁效应显示体20a,使得电流在垂直于层叠体的层叠表面的方向上流动,并且第一磁敏层14具有 其厚度设定在不小于0.5nm至不大于40nm的范围内。