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1. 发明授权

US5668432A Articulation device 失效
标题翻译：铰接装置
公开(公告)号：US5668432A
公开(公告)日：1997-09-16
申请号：US620210
申请日：1996-03-22
申请人： Takayuki Tominaga , Kouji Senda , Takaharu Idogaki , Takashi Kaneko , Hitoshi Kanayama
发明人： Takayuki Tominaga , Kouji Senda , Takaharu Idogaki , Takashi Kaneko , Hitoshi Kanayama
IPC分类号： B25J7/00 , B25J18/06 , F16C11/00 , F16C11/06 , H01L41/083 , H01L41/09 , H01L41/08
CPC分类号： H02N2/101 , B25J18/06 , B25J7/00 , F16C11/00 , F16C11/0647 , H01L41/0926 , H01L41/0953 , H01L41/0973 , H02N2/108
摘要： A moving member 2 is rotatably and slidably arranged in a holder 11 having a spherical inner surface 11a. An inertia body 5 is connected to the moving member 2 via a supporting member 4. At a location opposite the inertia body 5, an arm 3 extends so that it is directed outwardly via an opening of the holder. A piezo electric actuator 63 is arranged between the rotating member 2 and the supporting member 4. An elongation of the actuator causes a relative swing movement between the inertia body 5 and moving member to occur in one direction such that a reaction force in the moving member 2 due to the inertia of the inertia body 5 exceeds the frictional force between the moving member 4 and the holder 11, which allows the moving member 4 to be displaced with respect to the holder 11. A contraction of the actuator causes a relative movement between the inertia body 5 and moving member to occur in the opposite direction such that a reaction force in the moving member 2 does not exceed the frictional force, which allows the inertia body to follow with the actuator 63. A reception of the elongation and the contraction allows a movement of the moving member to occur so that it exceeds the limit of the bonding movement of the actuator.
摘要翻译：移动构件2可旋转并可滑动地布置在具有球形内表面11a的保持器11中。惯性体5经由支撑构件4连接到移动构件2.在与惯性体5相对的位置处，臂3延伸，使得其经由保持器的开口向外指向。压电电致动器63设置在旋转构件2和支撑构件4之间。致动器的伸长使惯性体5和移动构件之间的相对摆动运动发生在一个方向上，使得移动构件 2由于惯性体5的惯性超过了移动部件4和保持器11之间的摩擦力，这允许移动部件4相对于保持器11移位。致动器的收缩导致相对运动惯性体5和移动构件沿相反方向发生，使得移动构件2中的反作用力不超过允许惯性体跟随致动器63的摩擦力。接收伸长率和收缩允许移动构件的运动发生，使得其超过致动器的结合运动的极限。

2. 发明授权

US4819037A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4819037A
公开(公告)日：1989-04-04
申请号：US57027
申请日：1987-06-03
申请人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
发明人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
IPC分类号： H01L27/08 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/78 , H01L29/786 , H01L27/12
CPC分类号： H01L29/66712 , H01L21/76245 , H01L21/76264 , H01L21/764 , H01L21/8238 , H01L27/0922 , H01L21/76289
摘要： In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically from each other. A plurality of semiconductor intermetallic compound layers used as electrodes are formed independently in the same spaced relationship as the semiconductor elements for the respective semiconductor elements, making it possible to determine the potential for each semiconductor element as desired. Both N-type DMOS and P-type DMOS or the like can thus be formed on a single seminconductor single crystal substrate.
摘要翻译：在主要具有垂直半导体元件的半导体器件中，在形成于衬底上的绝缘层上形成彼此间隔开的多个半导体元件，由此完成彼此电绝缘。用作电极的多个半导体金属间化合物层以与用于各个半导体元件的半导体元件相同的间隔的关系独立地形成，使得可以根据需要确定每个半导体元件的电位。因此，可以在单个半导体单晶基板上形成N型DMOS和P型DMOS等。

3. 发明授权

US4847215A Method for forming silicon carbide semiconductor film 失效
标题翻译：形成碳化硅半导体膜的方法
公开(公告)号：US4847215A
公开(公告)日：1989-07-11
申请号：US264822
申请日：1988-10-31
申请人： Kenichi Hanaki , Hitomi Kitagawa , Takayuki Tominaga , Tadashi Hattori
发明人： Kenichi Hanaki , Hitomi Kitagawa , Takayuki Tominaga , Tadashi Hattori
IPC分类号： H01L21/205 , C23C16/32 , H01L31/04 , H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , C23C16/325 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S148/148 , Y10S438/931
摘要： A method for forming a SiC film having a wide optical energy gap and a high conductivity, which is capable of being stacked on a substrate of a large area uniformly. The SiC film is formed by supplying a material gas composed of monosilane gas, methane gas, diboran gas and hydrogen gas and having a hydrogen dilution ratio of about 144 and carbon mixing ratio of about 0.35, to the substrate, and supplying rf power of 60 to 270W(rf power density=80 to 350mW/cm.sup.2) under a gas pressure of 0.2 torr at a substrate temperature of 220.degree. C. The obtained film exhibits high dark-conductivity of 10.sup.-6 Scm.sup.-1 or more, and a Raman spectrum light thereof peaks at around 520 cm.sup.-1.
摘要翻译：一种形成具有宽的光能隙和高导电性的SiC膜的方法，其能够均匀地堆叠在大面积的基板上。通过向基板供给由甲硅烷气体，甲烷气体，二硼烷气体和氢气构成的原料气体，并且具有大约144的氢稀释比和约0.35的碳混合比，形成SiC膜，并且提供60°F的功率至270W（功率密度为80〜350mW / cm 2）的条件下，在220℃的基板温度下，在0.2托的气体压力下，得到10-6Scm-1以上的高导电性，拉曼光谱其峰值在约520cm -1处。

4. 发明授权

US5397420A Fine structure forming device 失效
标题翻译：精细结构成型装置
公开(公告)号：US5397420A
公开(公告)日：1995-03-14
申请号：US935104
申请日：1992-08-27
申请人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
发明人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
IPC分类号： B23K10/00 , H05H1/30 , H05H1/00
CPC分类号： H05H1/30 , B23K10/00
摘要： A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece. Reaction products of the workpiece and reactive gas produced by the etching adhere to and deposit on the sidewall of the trench and form a protective film for protecting the sidewall from being etched, thereby providing the trench with a high aspect ratio.
摘要翻译：微加工装置以低成本形成在工件中具有可选深度的高方位结构。该装置对工件和加工电极施加高频电力，以在加工电极的前端附近形成等离子体区域。该装置引导反应气体进入等离子体区域以激活气体。活性气体被工件的面向加工电极前端的表面吸附。吸附的气体与工件的材料反应并局部地从工件的表面上蚀刻掉。该装置的进给机构根据蚀刻的进行将加工电极朝向工件进给，从而在工件中形成沟槽。工件的反应产物和通过蚀刻产生的反应性气体粘附并沉积在沟槽的侧壁上并形成保护膜，以保护侧壁不被蚀刻，从而为沟槽提供高纵横比。

5. 发明授权

US5311041A Thin film transistor having an inverted stagger type structure 失效
标题翻译：具有倒置交错型结构的薄膜晶体管
公开(公告)号：US5311041A
公开(公告)日：1994-05-10
申请号：US846047
申请日：1992-03-05
申请人： Takayuki Tominaga , Nobuyoshi Sakakibara , Yuji Hasebe , Tadashi Hattori
发明人： Takayuki Tominaga , Nobuyoshi Sakakibara , Yuji Hasebe , Tadashi Hattori
IPC分类号： H01L23/15 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01 , H01L27/13
CPC分类号： H01L29/78696 , H01L27/1214 , H01L29/66765 , H01L29/78678
摘要： A thin film transistor having an inverted stagger type structure is formed on a substrate. A gate film having a gate electrode portion is formed on the substrate. A gate insulating film is formed on the gate electrode portion of the gate film such that the gate insulating film is located entirely inside a perimeter defied by the outer edges of the gate electrode portion. A polycrystalline semiconductor film, which is an active layer of the transistor, is formed on the gate insulating film such that it is entirely inside a perimeter defined by the outer edges of the gate insulating layer. The polycrystalline semiconductor film, gate insulating film and gate film are selectively photoetched after being formed on the substrate. Source and drain electrode films are formed so that the electrode films electrically connect with the polycrystalline semiconductor film.
摘要翻译：在基板上形成具有反交错型结构的薄膜晶体管。在基板上形成具有栅电极部分的栅极膜。栅极绝缘膜形成在栅极膜的栅电极部分上，使得栅极绝缘膜完全位于由栅电极部分的外边缘反射的周边内。作为晶体管的有源层的多晶半导体膜形成在栅极绝缘膜上，使得其完全在由栅极绝缘层的外边缘限定的周边内。在形成在基板上之后，选择性地对多晶半导体膜，栅极绝缘膜和栅极膜进行光刻。形成源极和漏极电极膜，使得电极膜与多晶半导体膜电连接。

6. 发明授权

US5357073A Electrical discharge machine 失效
标题翻译：放电机
公开(公告)号：US5357073A
公开(公告)日：1994-10-18
申请号：US27532
申请日：1993-03-08
申请人： Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori
发明人： Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori
IPC分类号： B23H7/22 , B23H1/04
CPC分类号： B23H1/04
摘要： An electrode for electrical discharge machining. This spark-machining electrode improves the accuracy at which the workpiece is machined by electrical discharge machining. The electrode can dispense with a mechanism which scans the spark-machining electrode or the workpiece. A plurality of needlelike electrodes are formed on the surface of the spark-machining electrode. The needlelike electrodes are so arranged that they are present in craters created by their respective adjacent needlelike electrodes. The plural electrodes form a group. The shape of the surface of this group is formed according to the desired shape to be formed in the workpiece. Art electric discharge occurs mainly at the tips of the needlelike electrodes and so the capacitance is smaller than the capacitance of the prior art flat-plate electrode. Also, the energy of a single electric discharge can be reduced. Furthermore, electric discharge at the side surfaces of the needlelike electrodes can be suppressed because of the effect of concentration of electric field.
摘要翻译：放电加工用电极。该火花加工电极通过放电加工提高了加工工件的精度。电极可以省去扫描火花加工电极或工件的机构。在火花加工电极的表面上形成多个针状电极。针状电极被布置成使它们存在于由它们各自相邻的针状电极产生的凹坑中。多个电极形成一组。该组的表面的形状根据要在工件中形成的所需形状形成。艺术放电主要发生在针状电极的尖端，因此电容小于现有技术的平板电极的电容。此外，可以减少单个放电的能量。此外，由于电场浓度的影响，可以抑制针状电极的侧面的放电。

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